FR3049763A1 - - Google Patents
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- Publication number
- FR3049763A1 FR3049763A1 FR1652782A FR1652782A FR3049763A1 FR 3049763 A1 FR3049763 A1 FR 3049763A1 FR 1652782 A FR1652782 A FR 1652782A FR 1652782 A FR1652782 A FR 1652782A FR 3049763 A1 FR3049763 A1 FR 3049763A1
- Authority
- FR
- France
- Prior art keywords
- layer
- semiconductor
- penetration
- substrate
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 142
- 230000035515 penetration Effects 0.000 claims abstract description 65
- 238000002161 passivation Methods 0.000 claims abstract description 51
- 239000012212 insulator Substances 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 8
- 238000012546 transfer Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 101100203596 Caenorhabditis elegans sol-1 gene Proteins 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000013508 migration Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910020169 SiOa Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 244000045947 parasite Species 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1652782A FR3049763B1 (fr) | 2016-03-31 | 2016-03-31 | Substrat semi-conducteur sur isolant pour applications rf |
| TW106109658A TWI720161B (zh) | 2016-03-31 | 2017-03-23 | 用於射頻應用之絕緣體上半導體底材 |
| KR1020187030528A KR102172705B1 (ko) | 2016-03-31 | 2017-03-30 | Rf 애플리케이션들을 위한 반도체 온 절연체 기판 |
| JP2018550442A JP6657516B2 (ja) | 2016-03-31 | 2017-03-30 | Ｒｆ用途のための半導体オンインシュレータ基板 |
| US16/090,349 US10886162B2 (en) | 2016-03-31 | 2017-03-30 | Semiconductor-on-insulator substrate for RF applications |
| DE112017001617.7T DE112017001617T5 (de) | 2016-03-31 | 2017-03-30 | Halbleiter-auf-lsolator-Substrat für HF-Anwendungen |
| PCT/EP2017/057614 WO2017167923A1 (en) | 2016-03-31 | 2017-03-30 | Semiconductor on insulator substrate for rf applications |
| CN201780026817.8A CN109075120B (zh) | 2016-03-31 | 2017-03-30 | 用于rf应用的绝缘体上半导体衬底 |
| US17/090,608 US11626319B2 (en) | 2016-03-31 | 2020-11-05 | Semiconductor-on-insulator substrate for rf applications |
| US18/192,016 US20230238274A1 (en) | 2016-03-31 | 2023-03-29 | Semiconductor-on-insulator substrate for rf applications |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1652782 | 2016-03-31 | ||
| FR1652782A FR3049763B1 (fr) | 2016-03-31 | 2016-03-31 | Substrat semi-conducteur sur isolant pour applications rf |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3049763A1 true FR3049763A1 (enExample) | 2017-10-06 |
| FR3049763B1 FR3049763B1 (fr) | 2018-03-16 |
Family
ID=56511678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1652782A Active FR3049763B1 (fr) | 2016-03-31 | 2016-03-31 | Substrat semi-conducteur sur isolant pour applications rf |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US10886162B2 (enExample) |
| JP (1) | JP6657516B2 (enExample) |
| KR (1) | KR102172705B1 (enExample) |
| CN (1) | CN109075120B (enExample) |
| DE (1) | DE112017001617T5 (enExample) |
| FR (1) | FR3049763B1 (enExample) |
| TW (1) | TWI720161B (enExample) |
| WO (1) | WO2017167923A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3049763B1 (fr) * | 2016-03-31 | 2018-03-16 | Soitec | Substrat semi-conducteur sur isolant pour applications rf |
| SG11201903090SA (en) * | 2016-10-26 | 2019-05-30 | Globalwafers Co Ltd | High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency |
| FR3079662B1 (fr) * | 2018-03-30 | 2020-02-28 | Soitec | Substrat pour applications radiofrequences et procede de fabrication associe |
| WO2020072212A1 (en) * | 2018-10-01 | 2020-04-09 | Applied Materials, Inc. | Method of forming an rf silicon on insulator device |
| TWI815970B (zh) * | 2018-11-09 | 2023-09-21 | 日商日本碍子股份有限公司 | 壓電性材料基板與支持基板的接合體、及其製造方法 |
| FR3103631B1 (fr) | 2019-11-25 | 2022-09-09 | Commissariat Energie Atomique | Dispositif électronique integré comprenant une bobine et procédé de fabrication d’un tel dispositif |
| CN110890418B (zh) * | 2019-12-02 | 2021-11-05 | 中国科学院上海微系统与信息技术研究所 | 一种具有双埋氧层的晶体管结构及其制备方法 |
| FR3104322B1 (fr) * | 2019-12-05 | 2023-02-24 | Soitec Silicon On Insulator | Procédé de formation d'un substrat de manipulation pour une structure composite ciblant des applications rf |
| JP7392578B2 (ja) * | 2020-06-05 | 2023-12-06 | 信越半導体株式会社 | 高周波半導体装置の製造方法及び高周波半導体装置 |
| FR3119046B1 (fr) * | 2021-01-15 | 2022-12-23 | Applied Materials Inc | Substrat support en silicium adapte aux applications radiofrequences et procede de fabrication associe |
| CN114823903A (zh) * | 2021-01-27 | 2022-07-29 | 中国科学院微电子研究所 | 一种单结晶体管结构及其制造方法 |
| TWI761255B (zh) | 2021-07-08 | 2022-04-11 | 環球晶圓股份有限公司 | 晶圓及晶圓的製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120235283A1 (en) * | 2011-03-16 | 2012-09-20 | Memc Electronic Materials, Inc. | Silicon on insulator structures having high resistivity regions in the handle wafer |
| US20140084290A1 (en) * | 2011-03-22 | 2014-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications |
| WO2015112308A1 (en) * | 2014-01-23 | 2015-07-30 | Sunedison Semiconductor Limited | High resistivity soi wafers and a method of manufacturing thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168308A (ja) * | 1999-09-30 | 2001-06-22 | Canon Inc | シリコン薄膜の製造方法、ｓｏｉ基板の作製方法及び半導体装置 |
| WO2002084728A1 (en) | 2001-04-11 | 2002-10-24 | Memc Electronic Materials, Inc. | Control of thermal donor formation in high resistivity cz silicon |
| US7844149B2 (en) * | 2007-01-12 | 2010-11-30 | Jds Uniphase Corporation | Humidity tolerant electro-optic device |
| US8078565B2 (en) * | 2007-06-12 | 2011-12-13 | Kana Software, Inc. | Organically ranked knowledge categorization in a knowledge management system |
| US7883990B2 (en) * | 2007-10-31 | 2011-02-08 | International Business Machines Corporation | High resistivity SOI base wafer using thermally annealed substrate |
| FR2953640B1 (fr) | 2009-12-04 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante |
| US8536035B2 (en) * | 2012-02-01 | 2013-09-17 | International Business Machines Corporation | Silicon-on-insulator substrate and method of forming |
| FR2999801B1 (fr) * | 2012-12-14 | 2014-12-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure |
| US9853133B2 (en) * | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
| FR3049763B1 (fr) * | 2016-03-31 | 2018-03-16 | Soitec | Substrat semi-conducteur sur isolant pour applications rf |
-
2016
- 2016-03-31 FR FR1652782A patent/FR3049763B1/fr active Active
-
2017
- 2017-03-23 TW TW106109658A patent/TWI720161B/zh active
- 2017-03-30 DE DE112017001617.7T patent/DE112017001617T5/de active Pending
- 2017-03-30 WO PCT/EP2017/057614 patent/WO2017167923A1/en not_active Ceased
- 2017-03-30 CN CN201780026817.8A patent/CN109075120B/zh active Active
- 2017-03-30 US US16/090,349 patent/US10886162B2/en active Active
- 2017-03-30 KR KR1020187030528A patent/KR102172705B1/ko active Active
- 2017-03-30 JP JP2018550442A patent/JP6657516B2/ja active Active
-
2020
- 2020-11-05 US US17/090,608 patent/US11626319B2/en active Active
-
2023
- 2023-03-29 US US18/192,016 patent/US20230238274A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120235283A1 (en) * | 2011-03-16 | 2012-09-20 | Memc Electronic Materials, Inc. | Silicon on insulator structures having high resistivity regions in the handle wafer |
| US20140084290A1 (en) * | 2011-03-22 | 2014-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications |
| WO2015112308A1 (en) * | 2014-01-23 | 2015-07-30 | Sunedison Semiconductor Limited | High resistivity soi wafers and a method of manufacturing thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| US11626319B2 (en) | 2023-04-11 |
| US20230238274A1 (en) | 2023-07-27 |
| JP2019514202A (ja) | 2019-05-30 |
| CN109075120B (zh) | 2023-04-07 |
| WO2017167923A1 (en) | 2017-10-05 |
| US10886162B2 (en) | 2021-01-05 |
| TWI720161B (zh) | 2021-03-01 |
| KR102172705B1 (ko) | 2020-11-02 |
| DE112017001617T5 (de) | 2018-12-20 |
| US20210057269A1 (en) | 2021-02-25 |
| US20190115248A1 (en) | 2019-04-18 |
| FR3049763B1 (fr) | 2018-03-16 |
| TW201803015A (zh) | 2018-01-16 |
| KR20180127436A (ko) | 2018-11-28 |
| CN109075120A (zh) | 2018-12-21 |
| JP6657516B2 (ja) | 2020-03-04 |
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