FR2916900B1 - Dispositif a semi-conducteur - Google Patents

Dispositif a semi-conducteur

Info

Publication number
FR2916900B1
FR2916900B1 FR0854875A FR0854875A FR2916900B1 FR 2916900 B1 FR2916900 B1 FR 2916900B1 FR 0854875 A FR0854875 A FR 0854875A FR 0854875 A FR0854875 A FR 0854875A FR 2916900 B1 FR2916900 B1 FR 2916900B1
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0854875A
Other languages
English (en)
Other versions
FR2916900A1 (fr
Inventor
Shigeru Kusunoki
Koichi Mochizuki
Minoru Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2916900A1 publication Critical patent/FR2916900A1/fr
Application granted granted Critical
Publication of FR2916900B1 publication Critical patent/FR2916900B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR0854875A 2007-05-25 2008-07-17 Dispositif a semi-conducteur Expired - Fee Related FR2916900B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007139509A JP5138274B2 (ja) 2007-05-25 2007-05-25 半導体装置

Publications (2)

Publication Number Publication Date
FR2916900A1 FR2916900A1 (fr) 2008-12-05
FR2916900B1 true FR2916900B1 (fr) 2011-11-25

Family

ID=39877414

Family Applications (2)

Application Number Title Priority Date Filing Date
FR0853346A Expired - Fee Related FR2916574B1 (fr) 2007-05-25 2008-05-22 Dispositif a semi-conducteur
FR0854875A Expired - Fee Related FR2916900B1 (fr) 2007-05-25 2008-07-17 Dispositif a semi-conducteur

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR0853346A Expired - Fee Related FR2916574B1 (fr) 2007-05-25 2008-05-22 Dispositif a semi-conducteur

Country Status (7)

Country Link
US (1) US9484444B2 (fr)
JP (1) JP5138274B2 (fr)
KR (2) KR101084592B1 (fr)
CN (3) CN101312192B (fr)
DE (4) DE102008024467B4 (fr)
FR (2) FR2916574B1 (fr)
TW (1) TWI472031B (fr)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011049393A (ja) * 2009-08-27 2011-03-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2011253883A (ja) * 2010-06-01 2011-12-15 On Semiconductor Trading Ltd 半導体装置及びその製造方法
EP2602828A1 (fr) 2011-12-07 2013-06-12 Nxp B.V. Dispositif de semi-conducteur doté de tranchées d'isolation
JP6102140B2 (ja) * 2012-09-20 2017-03-29 三菱電機株式会社 半導体装置
JP6541862B2 (ja) * 2013-08-28 2019-07-10 ローム株式会社 半導体装置
US9917102B2 (en) * 2013-11-28 2018-03-13 Rohm Co., Ltd. Semiconductor device
JP6344071B2 (ja) * 2014-06-09 2018-06-20 富士電機株式会社 半導体装置
JP2016072532A (ja) * 2014-09-30 2016-05-09 サンケン電気株式会社 半導体素子
DE102015221375A1 (de) * 2015-11-02 2017-05-04 Robert Bosch Gmbh Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug
CN105552132B (zh) * 2016-02-04 2018-11-13 京东方科技集团股份有限公司 薄膜晶体管传感器及其制备方法
CN106684126A (zh) * 2016-12-12 2017-05-17 中航（重庆）微电子有限公司 一种沟槽型晶体管器件结构及制作方法
JP2018107693A (ja) * 2016-12-27 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置および電力変換装置
JP6874443B2 (ja) * 2017-03-16 2021-05-19 富士電機株式会社 半導体装置および半導体装置の製造方法
US10396189B2 (en) * 2017-05-30 2019-08-27 Fuji Electric Co., Ltd. Semiconductor device
JP7225562B2 (ja) * 2017-05-30 2023-02-21 富士電機株式会社 半導体装置
JP6796034B2 (ja) * 2017-06-29 2020-12-02 株式会社東芝 半導体装置
JP6896821B2 (ja) * 2018-01-09 2021-06-30 ローム株式会社 半導体装置
CN110190118A (zh) * 2018-02-22 2019-08-30 三垦电气株式会社 半导体装置和电子设备
JP6896673B2 (ja) * 2018-03-23 2021-06-30 株式会社東芝 半導体装置
US11664369B2 (en) 2018-03-29 2023-05-30 Rohm Co., Ltd. Semiconductor device
KR102216522B1 (ko) * 2018-06-19 2021-02-17 누보톤 테크놀로지 재팬 가부시키가이샤 반도체 장치
EP3598505B1 (fr) * 2018-07-19 2023-02-15 Mitsubishi Electric R&D Centre Europe B.V. Estimation de la température d'un dispositif à semiconducteur de puissance
JP7139232B2 (ja) * 2018-12-07 2022-09-20 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
CN111697067B (zh) * 2019-03-15 2023-11-24 上海睿驱微电子科技有限公司 能够快速骤回的逆导型绝缘栅双极型晶体管及其实现方法
US11164813B2 (en) * 2019-04-11 2021-11-02 Cree, Inc. Transistor semiconductor die with increased active area
CN110444594B (zh) * 2019-08-02 2023-03-24 扬州国扬电子有限公司 一种低寄生电阻的栅控型功率器件及其制造方法
CN111403341B (zh) * 2020-03-28 2023-03-28 电子科技大学 降低窄控制栅结构栅电阻的金属布线方法
CN111916496B (zh) * 2020-06-18 2022-02-11 南瑞联研半导体有限责任公司 一种igbt栅极总线结构
CN112687654B (zh) * 2020-12-14 2024-02-23 株洲中车时代半导体有限公司 沟槽栅igbt器件
EP4163981A1 (fr) * 2021-10-11 2023-04-12 Nexperia B.V. Dispositif semi-conducteur à diode de blocage
CN114582839B (zh) * 2022-05-06 2022-08-09 绍兴中芯集成电路制造股份有限公司 集成esd多晶硅层的半导体装置
CN115513281A (zh) * 2022-11-23 2022-12-23 深圳市威兆半导体股份有限公司 绝缘栅双极型晶体管
CN116646394A (zh) * 2023-07-27 2023-08-25 深圳芯能半导体技术有限公司 一种具栅极电阻的igbt芯片及其制作方法
CN116779663A (zh) * 2023-08-22 2023-09-19 合肥阿基米德电子科技有限公司 一种新型集成栅极电阻的igbt结构
CN116825850B (zh) * 2023-08-25 2023-11-17 江苏应能微电子股份有限公司 一种集成esd保护器件的分离栅沟槽mos器件及工艺
CN117116939B (zh) * 2023-10-25 2024-02-06 深圳腾睿微电子科技有限公司 绝缘栅双极晶体管芯片及其栅极电阻调整方法

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US79081A (en) * 1868-06-23 Whom it may concern
NL8400789A (nl) * 1984-03-13 1985-10-01 Philips Nv Werkwijze omvattende het gelijktijdig vervaardigen van halfgeleidergebieden met verschillende dotering.
JPS6232638A (ja) 1985-08-05 1987-02-12 Nec Corp 半導体記憶装置
JP2610866B2 (ja) * 1987-03-25 1997-05-14 日本電気株式会社 半導体抵抗素子
JPH0666472B2 (ja) 1987-06-22 1994-08-24 日産自動車株式会社 過電流保護機能を備えたｍｏｓｆｅｔ
JPH0687505B2 (ja) * 1987-12-22 1994-11-02 日本電気株式会社 大電力用電界効果トランジスタ
JPH0282034U (fr) * 1988-12-13 1990-06-25
EP0391123A3 (fr) * 1989-04-04 1991-09-11 Texas Instruments Incorporated Résistance et capacité en tranchée et de longueur étendue
US5115369A (en) 1990-02-05 1992-05-19 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
JPH0487373A (ja) 1990-07-31 1992-03-19 Fujitsu Ltd 半導体装置
JPH04280475A (ja) 1991-03-08 1992-10-06 Fuji Electric Co Ltd 半導体スイッチング装置
JP3018816B2 (ja) * 1993-02-22 2000-03-13 株式会社日立製作所 半導体素子の保護回路ならびにこれを有する半導体装置
CA2092370C (fr) 1993-03-24 1997-03-18 John M. Boyd Fabrication de resistances de circuit integre
US5316978A (en) 1993-03-25 1994-05-31 Northern Telecom Limited Forming resistors for intergrated circuits
JP3243902B2 (ja) * 1993-09-17 2002-01-07 株式会社日立製作所 半導体装置
JPH07273288A (ja) 1994-03-30 1995-10-20 Nec Corp 半導体装置の製造方法
JPH0818011A (ja) 1994-04-25 1996-01-19 Seiko Instr Inc 半導体装置及びその製造方法
JPH0832057A (ja) 1994-07-14 1996-02-02 Toshiba Corp 半導体装置及びその製造方法
JP3206726B2 (ja) * 1995-12-07 2001-09-10 富士電機株式会社 Ｍｏｓ型半導体装置の製造方法
US5721148A (en) 1995-12-07 1998-02-24 Fuji Electric Co. Method for manufacturing MOS type semiconductor device
JPH09289285A (ja) * 1996-04-19 1997-11-04 Nec Corp 半導体装置およびその製造方法
KR100236090B1 (ko) * 1996-12-31 1999-12-15 김영환 에스 램(sram) 셀 및 이의 제조방법
DE19811297B4 (de) * 1997-03-17 2009-03-19 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
JPH1187612A (ja) * 1997-09-04 1999-03-30 Matsushita Electron Corp 半導体装置及びその製造方法
JPH11234104A (ja) 1998-02-10 1999-08-27 Toshiba Corp 半導体モジュール及びインバータ装置
CN1242604A (zh) 1998-06-26 2000-01-26 株式会社东芝 半导体保护器件和功率转换器件
JP3116916B2 (ja) * 1998-08-17 2000-12-11 日本電気株式会社 回路装置、その製造方法
JP3150109B2 (ja) 1998-11-06 2001-03-26 日本電気アイシーマイコンシステム株式会社 ポリシリコン抵抗素子
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6274905B1 (en) 1999-06-30 2001-08-14 Fairchild Semiconductor Corporation Trench structure substantially filled with high-conductivity material
JP3971062B2 (ja) * 1999-07-29 2007-09-05 株式会社東芝 高耐圧半導体装置
DE19960563B4 (de) 1999-12-15 2005-11-03 Infineon Technologies Ag Halbleiterstruktur und entsprechendes Herstellungsverfahren
JP4032622B2 (ja) * 2000-09-06 2008-01-16 株式会社日立製作所 半導体素子及びこれを用いた半導体装置と変換器
JP2002141357A (ja) 2000-10-31 2002-05-17 Mitsubishi Electric Corp 半導体装置
JP2002208702A (ja) 2001-01-10 2002-07-26 Mitsubishi Electric Corp パワー半導体装置
JP2002208677A (ja) 2001-01-12 2002-07-26 Toyota Industries Corp 温度検出機能を備える半導体装置
WO2002061845A1 (fr) * 2001-02-01 2002-08-08 Mitsubishi Denki Kabushiki Kaisha Dispositif a semi-conducteur et son procede de fabrication
JP2002231943A (ja) 2001-02-02 2002-08-16 Toshiba Corp 半導体装置
JP2002246598A (ja) 2001-02-15 2002-08-30 Nec Yamagata Ltd 半導体装置及びその製造方法
JP4846106B2 (ja) 2001-02-16 2011-12-28 三菱電機株式会社 電界効果型半導体装置及びその製造方法
DE10123818B4 (de) 2001-03-02 2006-09-07 Infineon Technologies Ag Anordnung mit Schutzfunktion für ein Halbleiterbauelement
US7081398B2 (en) * 2001-10-12 2006-07-25 Micron Technology, Inc. Methods of forming a conductive line
JP2003189593A (ja) * 2001-12-19 2003-07-04 Toshiba Corp 絶縁ゲート型半導体素子のゲート駆動回路、絶縁ゲート型半導体モジュール及び電力変換装置
JP2003197914A (ja) * 2001-12-28 2003-07-11 Fuji Electric Co Ltd 半導体装置
GB0212564D0 (en) 2002-05-31 2002-07-10 Koninkl Philips Electronics Nv Trench-gate semiconductor device
JP2004281918A (ja) * 2003-03-18 2004-10-07 Ricoh Co Ltd 半導体装置及びその製造方法
JP4136778B2 (ja) 2003-05-07 2008-08-20 富士電機デバイステクノロジー株式会社 絶縁ゲート型バイポーラトランジスタ
JP4398719B2 (ja) * 2003-12-25 2010-01-13 株式会社東芝 半導体装置
DE10361714B4 (de) 2003-12-30 2009-06-10 Infineon Technologies Ag Halbleiterbauelement
JP2005228851A (ja) * 2004-02-12 2005-08-25 Mitsubishi Electric Corp Ｉｇｂｔモジュール
US7196397B2 (en) * 2004-03-04 2007-03-27 International Rectifier Corporation Termination design with multiple spiral trench rings
JP2005294649A (ja) * 2004-04-01 2005-10-20 Toshiba Corp 半導体装置
DE102004045467B4 (de) * 2004-09-20 2020-07-30 Infineon Technologies Ag Feldeffekt-Trenchtransistor
US20060273382A1 (en) * 2005-06-06 2006-12-07 M-Mos Sdn. Bhd. High density trench MOSFET with low gate resistance and reduced source contact space
US7319256B1 (en) * 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP2008085278A (ja) 2006-09-29 2008-04-10 Ricoh Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
TWI472031B (zh) 2015-02-01
DE102008064686B4 (de) 2014-04-10
US9484444B2 (en) 2016-11-01
KR20080103904A (ko) 2008-11-28
FR2916574B1 (fr) 2012-08-24
FR2916900A1 (fr) 2008-12-05
CN102569372B (zh) 2016-04-06
KR20100085892A (ko) 2010-07-29
DE102008064779B3 (de) 2014-01-02
CN101814497A (zh) 2010-08-25
CN102569372A (zh) 2012-07-11
FR2916574A1 (fr) 2008-11-28
CN101312192A (zh) 2008-11-26
CN101814497B (zh) 2012-08-08
KR101084592B1 (ko) 2011-11-17
TW200908324A (en) 2009-02-16
DE102008064778B3 (de) 2014-01-02
JP2008294301A (ja) 2008-12-04
DE102008024467A1 (de) 2008-11-27
KR101022300B1 (ko) 2011-03-21
US20080290407A1 (en) 2008-11-27
JP5138274B2 (ja) 2013-02-06
DE102008024467B4 (de) 2013-11-21
CN101312192B (zh) 2011-04-13

Similar Documents

Publication Publication Date Title
FR2916574B1 (fr) Dispositif a semi-conducteur
DE602008000468D1 (de) Halbleiterbauelement
DE602007013318D1 (de) Halbleiterbauelement
DE602008002784D1 (de) Halbleiterbauelement
DE602007004058D1 (de) Positionsbestimmungsvorrichtung
FR2911721B1 (fr) Dispositif a mosfet sur soi
BRPI0814324A2 (pt) Dispositivo
BRPI0822034A2 (pt) Dispositivo
FR2913081B1 (fr) Dispositif de poulie debrayable
DE602007013972D1 (de) Halbleiterbauelement
DE602007002105D1 (de) Halbleiterbauelement
FR2938887B1 (fr) Dispositif a ventouse
FR2899309B1 (fr) Dispositif porteur
DE602006012106D1 (de) Halbleiteranordnung
NO20070333L (no) En friksjonsokende innretning
DE602008003590D1 (de) Halbleiterbauelement
FR2883416B1 (fr) Dispositif a semiconducteur.
DE502008001742D1 (de) Kabelbearbeitungseinrichtung
DE602007000418D1 (de) Optisches Halbleiterbauelement
FR2940525B1 (fr) Dispositif semiconducteur
DE502007006389D1 (de) Elektronisches Gerät
FR2919515B1 (fr) Dispositif articule a pantographes
AT505742A3 (de) Elektronisches gerät
FI20075579A (fi) Pitolaite
FI20075216L (fi) Perustusjärjestely

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150130