FR2389236A1 - Transistors bipolaires et procede de fabrication - Google Patents

Transistors bipolaires et procede de fabrication

Info

Publication number
FR2389236A1
FR2389236A1 FR7812083A FR7812083A FR2389236A1 FR 2389236 A1 FR2389236 A1 FR 2389236A1 FR 7812083 A FR7812083 A FR 7812083A FR 7812083 A FR7812083 A FR 7812083A FR 2389236 A1 FR2389236 A1 FR 2389236A1
Authority
FR
France
Prior art keywords
base
region
manufacturing process
bipolar transistors
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7812083A
Other languages
English (en)
Other versions
FR2389236B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2389236A1 publication Critical patent/FR2389236A1/fr
Application granted granted Critical
Publication of FR2389236B1 publication Critical patent/FR2389236B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne un transistor bipolaire. Selon l'invention, autour de la limite de la surface d'une région de base 21 formée sur un substrat semi-conducteur 10, est formée une base 24 ayant une largeur constante inférieure à 1 mu et faite en silicium polycristallin; une région d'émetteur 22 configurée en îlot est formée dans la région de base et un émetteur est formé à la surface de la région d'émetteur; l'électrode 23 est électriquement isolée de la base 24 par une pellicule isolante 20 qui s'étend entre le pourtour de la région d'émetteur et la base. L'invention s'applique notamment aux transistors du type planar.
FR7812083A 1977-04-25 1978-04-24 Transistors bipolaires et procede de fabrication Granted FR2389236A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4673777A JPS53132275A (en) 1977-04-25 1977-04-25 Semiconductor device and its production

Publications (2)

Publication Number Publication Date
FR2389236A1 true FR2389236A1 (fr) 1978-11-24
FR2389236B1 FR2389236B1 (fr) 1982-04-16

Family

ID=12755633

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7812083A Granted FR2389236A1 (fr) 1977-04-25 1978-04-24 Transistors bipolaires et procede de fabrication

Country Status (8)

Country Link
US (2) US4531282A (fr)
JP (1) JPS53132275A (fr)
CA (1) CA1093703A (fr)
DE (1) DE2818090A1 (fr)
FR (1) FR2389236A1 (fr)
GB (1) GB1573496A (fr)
IT (1) IT1095322B (fr)
NL (1) NL189220C (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2463507A1 (fr) * 1979-08-10 1981-02-20 Rca Corp Procede de fabrication d'une couche de silicium polycristallin a basse resistivite
EP0029887A1 (fr) * 1979-12-03 1981-06-10 International Business Machines Corporation Procédé de fabrication d'un transistor PNP bipolaire vertical et transistor ainsi obtenu
FR2501912A1 (fr) * 1981-03-13 1982-09-17 Efcis Transistor bipolaire lateral sur isolant et son procede de fabrication
FR2508704A1 (fr) * 1981-06-26 1982-12-31 Thomson Csf Procede de fabrication de transistors bipolaires integres de tres petites dimensions
EP0076106A2 (fr) * 1981-09-28 1983-04-06 Fujitsu Limited Procédé de fabrication d'un transistor bipolaire
EP0216380A2 (fr) * 1985-09-26 1987-04-01 Kabushiki Kaisha Toshiba Dispositif semi-conducteur ayant une électrode à structure de plaque de champ

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JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
CA1129118A (fr) * 1978-07-19 1982-08-03 Tetsushi Sakai Dispositifs a semi-conducteurs et methode de fabrication
US4209349A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4209350A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming diffusions having narrow dimensions utilizing reactive ion etching
CA1131367A (fr) * 1978-11-13 1982-09-07 Keming W. Yeh Mesfet auto-aligne a resistance serie reduite
DE3051130C2 (de) * 1979-06-18 1997-07-31 Hitachi Ltd Verfahren zur Herstellung eines Bipolartransistors
JPS561556A (en) 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device
JPS5676562A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676563A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5688352A (en) * 1979-12-21 1981-07-17 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676561A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
US4319932A (en) * 1980-03-24 1982-03-16 International Business Machines Corporation Method of making high performance bipolar transistor with polysilicon base contacts
JPS56135964A (en) * 1980-03-28 1981-10-23 Nec Corp Semiconductor device
JPS56148825A (en) * 1980-04-21 1981-11-18 Nec Corp Manufacture of semiconductor device
JPS57206071A (en) * 1981-06-12 1982-12-17 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS5852817A (ja) * 1981-09-25 1983-03-29 Hitachi Ltd 半導体装置及びその製造方法
US4665424A (en) * 1984-03-30 1987-05-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US4640721A (en) * 1984-06-06 1987-02-03 Hitachi, Ltd. Method of forming bipolar transistors with graft base regions
JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
JPH0611053B2 (ja) * 1984-12-20 1994-02-09 三菱電機株式会社 半導体装置の製造方法
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US5049964A (en) * 1985-05-07 1991-09-17 Nippon Telegraph & Telephone Corp. Bipolar transistor and method of manufacturing the same
JPH0658912B2 (ja) * 1985-05-07 1994-08-03 日本電信電話株式会社 バイポーラトランジスタの製造方法
JPS6246545A (ja) * 1985-08-23 1987-02-28 Nec Corp 半導体装置の製造方法
EP0216945B1 (fr) * 1985-09-21 1989-07-05 Deutsche ITT Industries GmbH Procédé pour appliquer un contact sur une plage de contact d'un substrat semi-conducteur
US4843033A (en) * 1985-09-27 1989-06-27 Texas Instruments Incorporated Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source
DE3680520D1 (de) * 1986-03-22 1991-08-29 Itt Ind Gmbh Deutsche Verfahren zum herstellen einer monolithisch integrierten schaltung mit mindestens einem bipolaren planartransistor.
JPH0628266B2 (ja) * 1986-07-09 1994-04-13 株式会社日立製作所 半導体装置の製造方法
US4722908A (en) * 1986-08-28 1988-02-02 Fairchild Semiconductor Corporation Fabrication of a bipolar transistor with a polysilicon ribbon
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US5051805A (en) * 1987-07-15 1991-09-24 Rockwell International Corporation Sub-micron bipolar devices with sub-micron contacts
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US5286996A (en) * 1991-12-31 1994-02-15 Purdue Research Foundation Triple self-aligned bipolar junction transistor
DE4308958A1 (de) * 1993-03-21 1994-09-22 Prema Paezisionselektronik Gmb Verfahren zur Herstellung von Bipolartransistoren
US5420051A (en) * 1993-12-28 1995-05-30 Intel Corporation Pre-poly emitter implant
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US5705846A (en) * 1995-07-31 1998-01-06 National Semiconductor Corporation CMOS-compatible active pixel image array using vertical pnp cell
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2463507A1 (fr) * 1979-08-10 1981-02-20 Rca Corp Procede de fabrication d'une couche de silicium polycristallin a basse resistivite
EP0029887A1 (fr) * 1979-12-03 1981-06-10 International Business Machines Corporation Procédé de fabrication d'un transistor PNP bipolaire vertical et transistor ainsi obtenu
FR2501912A1 (fr) * 1981-03-13 1982-09-17 Efcis Transistor bipolaire lateral sur isolant et son procede de fabrication
EP0060761A1 (fr) * 1981-03-13 1982-09-22 Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux - E.F.C.I.S. Transistor bipolaire latéral sur isolant et son procédé de fabrication
FR2508704A1 (fr) * 1981-06-26 1982-12-31 Thomson Csf Procede de fabrication de transistors bipolaires integres de tres petites dimensions
EP0071494A1 (fr) * 1981-06-26 1983-02-09 Thomson-Csf Procédé de fabrication de transistors bipolaires intégrés de très petites dimensions
US4481706A (en) * 1981-06-26 1984-11-13 Thomson-Csf Process for manufacturing integrated bi-polar transistors of very small dimensions
EP0076106A2 (fr) * 1981-09-28 1983-04-06 Fujitsu Limited Procédé de fabrication d'un transistor bipolaire
EP0076106A3 (en) * 1981-09-28 1985-01-23 Fujitsu Limited Method for producing a bipolar transistor
EP0216380A2 (fr) * 1985-09-26 1987-04-01 Kabushiki Kaisha Toshiba Dispositif semi-conducteur ayant une électrode à structure de plaque de champ
EP0216380A3 (en) * 1985-09-26 1987-12-09 Kabushiki Kaisha Toshiba Semiconductor device with a field plate electrode structure

Also Published As

Publication number Publication date
IT7822688A0 (it) 1978-04-26
CA1093703A (fr) 1981-01-13
NL189220B (nl) 1992-09-01
JPS5527469B2 (fr) 1980-07-21
DE2818090C2 (fr) 1989-02-23
US4531282A (en) 1985-07-30
IT1095322B (it) 1985-08-10
GB1573496A (en) 1980-08-28
FR2389236B1 (fr) 1982-04-16
NL7804432A (nl) 1978-10-27
DE2818090A1 (de) 1978-11-02
US4920401A (en) 1990-04-24
NL189220C (nl) 1993-02-01
JPS53132275A (en) 1978-11-17

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