FR2389236B1 - - Google Patents

Info

Publication number
FR2389236B1
FR2389236B1 FR7812083A FR7812083A FR2389236B1 FR 2389236 B1 FR2389236 B1 FR 2389236B1 FR 7812083 A FR7812083 A FR 7812083A FR 7812083 A FR7812083 A FR 7812083A FR 2389236 B1 FR2389236 B1 FR 2389236B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7812083A
Other versions
FR2389236A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2389236A1 publication Critical patent/FR2389236A1/fr
Application granted granted Critical
Publication of FR2389236B1 publication Critical patent/FR2389236B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7812083A 1977-04-25 1978-04-24 Transistors bipolaires et procede de fabrication Granted FR2389236A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4673777A JPS53132275A (en) 1977-04-25 1977-04-25 Semiconductor device and its production

Publications (2)

Publication Number Publication Date
FR2389236A1 FR2389236A1 (fr) 1978-11-24
FR2389236B1 true FR2389236B1 (fr) 1982-04-16

Family

ID=12755633

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7812083A Granted FR2389236A1 (fr) 1977-04-25 1978-04-24 Transistors bipolaires et procede de fabrication

Country Status (8)

Country Link
US (2) US4531282A (fr)
JP (1) JPS53132275A (fr)
CA (1) CA1093703A (fr)
DE (1) DE2818090A1 (fr)
FR (1) FR2389236A1 (fr)
GB (1) GB1573496A (fr)
IT (1) IT1095322B (fr)
NL (1) NL189220C (fr)

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US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
CA1129118A (fr) * 1978-07-19 1982-08-03 Tetsushi Sakai Dispositifs a semi-conducteurs et methode de fabrication
US4209349A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4209350A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming diffusions having narrow dimensions utilizing reactive ion etching
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DE3051130C2 (de) * 1979-06-18 1997-07-31 Hitachi Ltd Verfahren zur Herstellung eines Bipolartransistors
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US4229502A (en) * 1979-08-10 1980-10-21 Rca Corporation Low-resistivity polycrystalline silicon film
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JPS5676561A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676563A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676562A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
EP0029887B1 (fr) * 1979-12-03 1983-07-13 International Business Machines Corporation Procédé de fabrication d'un transistor PNP bipolaire vertical et transistor ainsi obtenu
US4319932A (en) * 1980-03-24 1982-03-16 International Business Machines Corporation Method of making high performance bipolar transistor with polysilicon base contacts
JPS56135964A (en) * 1980-03-28 1981-10-23 Nec Corp Semiconductor device
JPS56148825A (en) * 1980-04-21 1981-11-18 Nec Corp Manufacture of semiconductor device
FR2501912A1 (fr) * 1981-03-13 1982-09-17 Efcis Transistor bipolaire lateral sur isolant et son procede de fabrication
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KR100248504B1 (ko) * 1997-04-01 2000-03-15 윤종용 바이폴라 트랜지스터 및 그의 제조 방법
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JP2008135504A (ja) * 2006-11-28 2008-06-12 Elpida Memory Inc 半導体装置の製造方法
FR3100381B1 (fr) * 2019-08-29 2021-08-20 Commissariat Energie Atomique Procédé de fabrication d’une cellule photovoltaïque
US11563084B2 (en) 2019-10-01 2023-01-24 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor
US11355585B2 (en) 2019-10-01 2022-06-07 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor
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Also Published As

Publication number Publication date
GB1573496A (en) 1980-08-28
JPS53132275A (en) 1978-11-17
NL7804432A (nl) 1978-10-27
IT1095322B (it) 1985-08-10
US4920401A (en) 1990-04-24
US4531282A (en) 1985-07-30
CA1093703A (fr) 1981-01-13
NL189220C (nl) 1993-02-01
JPS5527469B2 (fr) 1980-07-21
IT7822688A0 (it) 1978-04-26
DE2818090A1 (de) 1978-11-02
FR2389236A1 (fr) 1978-11-24
NL189220B (nl) 1992-09-01
DE2818090C2 (fr) 1989-02-23

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