IT7822688A0 - Transistore bipolare e metodo per la sua fabbricazione. - Google Patents

Transistore bipolare e metodo per la sua fabbricazione.

Info

Publication number
IT7822688A0
IT7822688A0 IT7822688A IT2268878A IT7822688A0 IT 7822688 A0 IT7822688 A0 IT 7822688A0 IT 7822688 A IT7822688 A IT 7822688A IT 2268878 A IT2268878 A IT 2268878A IT 7822688 A0 IT7822688 A0 IT 7822688A0
Authority
IT
Italy
Prior art keywords
manufacture
bipolar transistor
bipolar
transistor
Prior art date
Application number
IT7822688A
Other languages
English (en)
Other versions
IT1095322B (it
Original Assignee
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph & Telephone filed Critical Nippon Telegraph & Telephone
Publication of IT7822688A0 publication Critical patent/IT7822688A0/it
Application granted granted Critical
Publication of IT1095322B publication Critical patent/IT1095322B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66272Silicon vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/3115Doping the insulating layers
    • H01L21/31155Doping the insulating layers by ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3215Doping the layers
    • H01L21/32155Doping polycristalline - or amorphous silicon layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7322Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IT22688/78A 1977-04-25 1978-04-26 Transistore bipolare e metodo per la sua fabbricazione IT1095322B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4673777A JPS53132275A (en) 1977-04-25 1977-04-25 Semiconductor device and its production

Publications (2)

Publication Number Publication Date
IT7822688A0 true IT7822688A0 (it) 1978-04-26
IT1095322B IT1095322B (it) 1985-08-10

Family

ID=12755633

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22688/78A IT1095322B (it) 1977-04-25 1978-04-26 Transistore bipolare e metodo per la sua fabbricazione

Country Status (8)

Country Link
US (2) US4531282A (it)
JP (1) JPS53132275A (it)
CA (1) CA1093703A (it)
DE (1) DE2818090A1 (it)
FR (1) FR2389236A1 (it)
GB (1) GB1573496A (it)
IT (1) IT1095322B (it)
NL (1) NL189220C (it)

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US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
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US4209350A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming diffusions having narrow dimensions utilizing reactive ion etching
CA1131367A (en) * 1978-11-13 1982-09-07 Keming W. Yeh Self-aligned mesfet having reduced series resistance
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US4319932A (en) * 1980-03-24 1982-03-16 International Business Machines Corporation Method of making high performance bipolar transistor with polysilicon base contacts
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FR2508704B1 (fr) * 1981-06-26 1985-06-07 Thomson Csf Procede de fabrication de transistors bipolaires integres de tres petites dimensions
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US4640721A (en) * 1984-06-06 1987-02-03 Hitachi, Ltd. Method of forming bipolar transistors with graft base regions
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JPH0628266B2 (ja) * 1986-07-09 1994-04-13 株式会社日立製作所 半導体装置の製造方法
US4722908A (en) * 1986-08-28 1988-02-02 Fairchild Semiconductor Corporation Fabrication of a bipolar transistor with a polysilicon ribbon
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US5051805A (en) * 1987-07-15 1991-09-24 Rockwell International Corporation Sub-micron bipolar devices with sub-micron contacts
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US5096842A (en) * 1988-05-16 1992-03-17 Kabushiki Kaisha Toshiba Method of fabricating bipolar transistor using self-aligned polysilicon technology
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JP3688816B2 (ja) * 1996-07-16 2005-08-31 株式会社東芝 半導体装置の製造方法
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US11355585B2 (en) 2019-10-01 2022-06-07 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor
US11404540B2 (en) 2019-10-01 2022-08-02 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor
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Also Published As

Publication number Publication date
FR2389236B1 (it) 1982-04-16
JPS53132275A (en) 1978-11-17
US4920401A (en) 1990-04-24
GB1573496A (en) 1980-08-28
NL189220C (nl) 1993-02-01
DE2818090C2 (it) 1989-02-23
FR2389236A1 (fr) 1978-11-24
NL7804432A (nl) 1978-10-27
US4531282A (en) 1985-07-30
IT1095322B (it) 1985-08-10
NL189220B (nl) 1992-09-01
JPS5527469B2 (it) 1980-07-21
CA1093703A (en) 1981-01-13
DE2818090A1 (de) 1978-11-02

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Effective date: 19970327