NL7706781A - Veldeffekttransistor en werkwijze voor de ver- vaardiging ervan. - Google Patents
Veldeffekttransistor en werkwijze voor de ver- vaardiging ervan.Info
- Publication number
- NL7706781A NL7706781A NL7706781A NL7706781A NL7706781A NL 7706781 A NL7706781 A NL 7706781A NL 7706781 A NL7706781 A NL 7706781A NL 7706781 A NL7706781 A NL 7706781A NL 7706781 A NL7706781 A NL 7706781A
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacture
- field effect
- effect transistor
- transistor
- field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/699,012 US4087902A (en) | 1976-06-23 | 1976-06-23 | Field effect transistor and method of construction thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7706781A true NL7706781A (nl) | 1977-12-28 |
Family
ID=24807568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7706781A NL7706781A (nl) | 1976-06-23 | 1977-06-20 | Veldeffekttransistor en werkwijze voor de ver- vaardiging ervan. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4087902A (nl) |
JP (1) | JPS531477A (nl) |
CA (1) | CA1073118A (nl) |
DE (1) | DE2727279A1 (nl) |
FR (1) | FR2356280A1 (nl) |
GB (1) | GB1579168A (nl) |
MX (1) | MX144217A (nl) |
NL (1) | NL7706781A (nl) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53138281A (en) * | 1977-05-09 | 1978-12-02 | Nec Corp | Insulated-gate field effect transistor |
DE3028718C2 (de) * | 1979-07-31 | 1982-08-19 | Sharp K.K., Osaka | Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung |
JPS56126936A (en) * | 1980-03-12 | 1981-10-05 | Toshiba Corp | Semiconductor device and production thereof |
JPH0620140B2 (ja) * | 1986-06-11 | 1994-03-16 | 株式会社日立製作所 | 薄膜トランジスタ |
US4923824A (en) * | 1988-04-27 | 1990-05-08 | Vtc Incorporated | Simplified method of fabricating lightly doped drain insulated gate field effect transistors |
JP2660451B2 (ja) | 1990-11-19 | 1997-10-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5185280A (en) * | 1991-01-29 | 1993-02-09 | Texas Instruments Incorporated | Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL149638B (nl) * | 1966-04-14 | 1976-05-17 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting bevattende ten minste een veldeffecttransistor, en halfgeleiderinrichting, vervaardigd volgens deze werkwijze. |
US3679492A (en) * | 1970-03-23 | 1972-07-25 | Ibm | Process for making mosfet's |
NL164424C (nl) * | 1970-06-04 | 1980-12-15 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag. |
BE789992A (fr) * | 1971-10-12 | 1973-04-12 | Siemens Ag | Circuit logique comportant un transistor de commutation et un transistor de charge, notamment pour un element de memoire a semiconducteur |
US3855008A (en) * | 1973-08-30 | 1974-12-17 | Gen Instrument Corp | Mos integrated circuit process |
US4033026A (en) * | 1975-12-16 | 1977-07-05 | Intel Corporation | High density/high speed MOS process and device |
-
1976
- 1976-06-23 US US05/699,012 patent/US4087902A/en not_active Expired - Lifetime
-
1977
- 1977-06-02 GB GB23364/77A patent/GB1579168A/en not_active Expired
- 1977-06-16 DE DE19772727279 patent/DE2727279A1/de not_active Withdrawn
- 1977-06-20 NL NL7706781A patent/NL7706781A/nl not_active Application Discontinuation
- 1977-06-20 JP JP7228177A patent/JPS531477A/ja active Pending
- 1977-06-21 CA CA281,001A patent/CA1073118A/en not_active Expired
- 1977-06-22 FR FR7719087A patent/FR2356280A1/fr not_active Withdrawn
- 1977-06-23 MX MX169604A patent/MX144217A/es unknown
Also Published As
Publication number | Publication date |
---|---|
GB1579168A (en) | 1980-11-12 |
MX144217A (es) | 1981-09-10 |
CA1073118A (en) | 1980-03-04 |
JPS531477A (en) | 1978-01-09 |
FR2356280A1 (fr) | 1978-01-20 |
DE2727279A1 (de) | 1978-01-05 |
US4087902A (en) | 1978-05-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |