FI82999C - Optisk anordning och foerfarande foer dess framstaellning. - Google Patents

Optisk anordning och foerfarande foer dess framstaellning. Download PDF

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Publication number
FI82999C
FI82999C FI844473A FI844473A FI82999C FI 82999 C FI82999 C FI 82999C FI 844473 A FI844473 A FI 844473A FI 844473 A FI844473 A FI 844473A FI 82999 C FI82999 C FI 82999C
Authority
FI
Finland
Prior art keywords
solder layer
optical device
piece
electrode
substrate
Prior art date
Application number
FI844473A
Other languages
English (en)
Swedish (sv)
Other versions
FI844473L (fi
FI82999B (fi
FI844473A0 (fi
Inventor
Hideaki Nishizawa
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58218964A external-priority patent/JPS60110180A/ja
Priority claimed from JP58223020A external-priority patent/JPS60113978A/ja
Priority claimed from JP58232341A external-priority patent/JPS60124885A/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of FI844473A0 publication Critical patent/FI844473A0/fi
Publication of FI844473L publication Critical patent/FI844473L/fi
Priority to FI880867A priority Critical patent/FI91574C/fi
Application granted granted Critical
Publication of FI82999B publication Critical patent/FI82999B/fi
Publication of FI82999C publication Critical patent/FI82999C/fi

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Classifications

    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
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Description

1 82999
Optinen laite ja menetelmä sen valmistamiseksi Tämä keksintö liittyy optisiin laitteisiin, kuten valodiodeihin ja fotodiodeihin, joilla on patenttivaati-5 muksen 1 johdanto-osassa annetut tunnusmerkit, ja menetelmään niiden valmistamiseksi.
Keksinnön lähtökohtana oleva ongelma on fotodiodin käyttö suurella nopeudella. Koska fotodiodia käytetään käänteisesti esijännitetyssä tilassa, estää pn-rajapinnan 10 sähköinen kapasitanssi käytön suurella nopeudella. Valoa vastaanottavan alueen (pn-rajapinnan) alan pienentäminen vähentää sähköistä kapasitanssia. Tätä tarkoitusta varten voidaan käyttää kuviossa 1 esitettyä mesarakennetta.
n-InP-alustalle 31 muodostetaan epitaksiaalisen kas-15 vatuksen avulla p-InP-kerros 32. Alustan 31 ja kerroksen 32 välillä oleva kapea pn-rajapinta 33 toimii valoa vastaanottavana alueena. Lisäksi on p-InP-kerros 32 ja pn-rajapinta 33 syövytetty kaistaleiksi kohti n-InP alustaa 31 molemmilla puolilla valoa vastaanottavan alueen pienen-20 tämiseksi. Koska p-InP-kerros 32 on kaventunut kaistaleiksi, ei sen päälle enää voida kiinnittää renkaanmuotoista elektrodia. Sen mukaisesti kiinnitetään kaistaleenmuotoi-nen p-tyyppinen Au-Zn-elektrodi 34. Sitten tehdään valon kulku p-pinnasta mahdottomaksi. Sen sijaan kiinnitetään 25 p-InP-alustan 31 pohjaan renkaanmuotoinen, n-tyyppinen AuGeNi-elektrodi 35. Tällöin toimii n-InP-alustan 31 pohjan keskiosa valoa vastaanottavana pintana 36, jonka kautta valo saatetaan kulkemaan. Edellä selitetty fotodiodin pala 37 valmistetaan kiekkomenetelmällä, jossa sen jälkeen kun 30 joukko laitteita on valmistettu, puolijohdekiekko piirroi-tetaan ja jaetaan paloihin 37. Pala 37 on koteloitava. Toinen ongelma on fotodiodipalan 37 kiinnitys laipalle.
Tämän keksinnön päämääränä on tarjota fotodiodi, jossa fotodiodin pala voidaan liittää liitoslaippaan va-35 kaaseen tilaan.
2 82999 Tämän keksinnön eräänä muuna päämääränä on vielä tarjota fotodiodin valmistusta varten menetelmä, jossa fotodiodin pala voidaan liittää liitoslaippaan vakaaseen tilaan.
5 Tämän keksinnön mukaiselle optiselle laitteelle on tunnusomaista, että optisen laitteen palassa on elektrodi ja juotekerros, jotka on peräkkäisessä järjestyksessä asennettu sen liitetylle sivulle, jolloin kummassakin kerroksessa on reikä valon läpipäästämistä varten, ja että op-10 tisen laitteen pala on liitetty liitoslaippaan juoteker-roksen avulla.
Tämän keksinnön mukaisen optisen laitteen valmistusmenetelmälle on puolestaan tunnusomaista, että se käsittää vaiheet: 15 elektrodin, jossa on valoa läpipäästävä reikä, asen tamisen optisen laitteen palan sille pinnalle, johon valo osuu, ja juotekerroksen asentamisen tämän jälkeen mainitulle elektrodille, puolijohdepalan liitoslaipan asentamisen valoa läpi-20 päästävälle alustalle, ja mainitulla optisen laitteen palalla olevan elektrodin liittämisen liitoslaippaan käyttämällä mainittua juote-kerrosta, jolloin tuotetaan yhtenäinen optinen laite, johon puolijohdepala on liitetty stabiiliin tilaan.
25 Keksintöä kuvataan seuraavassa lähemmin viitaten oheiseen piirustukseen, jossa kuvio 1 on leikkauskuva tavanomaisen mesatyyppisen fotodiodipalan esimerkistä, kuvio 2 on leikkauskuva tämän keksinnön mukaisen 30 mesatyyppisen fotodiodin esimerkistä, kuvio 3 on leikkauskuva, joka esittää tilaa, jossa kuvion 2 mesatyyppinen fotodiodin pala sijoitetaan optisen laitteen kotelon safiirialustalle, ja kuvio 4 on leikkauskuva, joka esittää tilaa, jossa 35 kuvion 2 mesatyyppinen fotodiodin pala sijoitetaan optisen 3 82999 laitteen kotelon keramiikka-alustalle.
Seuraavassa selitetään yksityiskohtaisesti keksinnön suoritusmuotoa, jonka avulla voidaan ratkaista optisen laitteen palan liitoslaippaan kiinnittämiseen liittyvät 5 ongelmat, kuten juotteen valuminen valoa vastaanottavaan pintaan ja vaihtelut liitoksen lujuudessa. Tässä keksinnössä ei juotetta sijoiteta alustan puolelle, vaan juote-kerros sijoitetaan palan puolelle.
Kuvio 2 on leikkauskuva, joka esittää esimerkkiä, 10 jossa tätä keksintöä sovelletaan fotodiodin mesatyyppiseen palaan. Seostamaton epitakainen InGaAs-kerros kasvatetaan epitaksisen nestefaasiprosessin avulla Sn-seostetulle InP-alustalle 61, niin että sen hilarakenne sopii XnP-alustaan 61. Sitten muodostetaan Zn-diffuusion avulla p-tyyppinen 15 alue 63, jolloin syntyy pn-rajapinta. Sen jälkeen muodostetaan AuZnrn avulla p-puolen elektrodi 64, ja n-puolen elektrodi 65 muodostetaan AuGeNi:n avulla.
Lisäksi syövytetään pala kummaltakin puolelta pn-rajapinnan lähellä mesamuotoon sähköisen kapasitanssin pie-20 nentämiseksi. Sitten muodostetaan n-puolen elektrodin 65 alasivulle Sn-pinnoituskuvio käyttämällä pinnoitusliuoksena alkanolisulfonihappoa. Sn-pinnoitettua osaa kutsutaan tämän jälkeen juotekerrokseksi 66, koska se toimii juotteena. Sekä juotekerros 66 että n-puolen elektrodi 65 ovat renkaan 25 muotoisia ja palan alasivu keskiosa, joka on paljas, toimii valoa vastaanottavana pintana 67. Juotekerroksen 66 paksuus on 1-5,pm. Sen jälkeen puolijohdekiekko piirroite-taan ja jaetaan yksittäisiksi paloiksi. Juotekerros 66 muodostetaan tehokkaasti pinnoittamalla tai höyrystämällä. 30 Tinan lisäksi voidaan juotekerroksen 66 materiaalina käyttää eutektista AuSn-seosta tai eutektista AuSi-seosta.
Tällä tavoin valmistetun fotodiodipalan liittämiseksi, käyttämällä tinaa juotteena, lämmitetään liitettävä kotelo lämpötilaan 250° ja pala juotekerroksineen 66 kiin-35 nitetään koteloon ja kohdistetaan laippaan ja liitetään 4 82999 siihen. Tässä vaiheessa ei tarvita muuta juotetta, koska palan alasivulla oleva juotekerros sulaa hetkellisesti ja jähmettyy sitten kiinnittääkseen palan lujasti.
Kokeissa liitettiin fotodiodin pala koteloon erit-5 täin tyydyttävästi, kun tinapinnoitteen paksuus oli 5-10 pm. Kun tinapinnoitteen paksuus oli 5 pm tai alle, vaih-teli liitoksen lujuus ja oli epävakaa. Kun tinapinnoitteen paksuus oli 10 pm tai yli, tinajuote valui ja oli vaihte-leva.
10 Tässä keksinnössä on juotekerros palan puolella.
Juotekerros liittää palan kotelon alustaan. Alustan ja kotelon materiaali ja muoto ovat mielivaltaiset.
Kuvio 3 on leikkauskuva rakenteesta, jossa mainittu fotodiodin pala on kiinnitetty litteätyyppiseen kote-15 loon, jossa käytetään safiirialustaa 21. Kuvion 2 optisen laitteen pala asetetaan suoraan (käyttämättä uutta juotetta) liitoslaipalle 23 ja liitetään siihen n-puolen elektrodin 65 ja laipan 23 kiinnittämiseksi lujasti siihen. P-puolen elektrodi 64 lankaliitetään laippaan 28 langalla 30. 20 Valo kulkee safiirialustan 21 ja laipan 23 aukon 24 kautta ja saapuu valoa vastaanottavaan pintaan 67. Tässä rakenteessa ei juotekerros 66 valu eikä siirry.
Kuvio 4 on leikkauskuva, joka esittää rakennetta, jossa mainittu fotodiodin pala on kiinnitetty koteloon, 25 jossa on keramiikka-alusta. Lankaliitäntää, johdinta ja kotelon ulkomuotoa ei esitetä, koska ne voidaan valita mielivaltaisesti. Kuviossa 4 ei keramiikka-alustaa ole varustettu juotteella, vaan palan puolella oleva juotekerros 66 toimii juotteena palan kiinnittämiseksi lujasti 30 laippaan 42.
Vaikka tätä keksintöä on edellä selitetty viitaten erityisiin sovellutuksiin, on selvää, että tätä keksintöä voidaan soveltaa kaikkiin optisiin laitteisiin, kuten ta-sotyyppiseen fotodiodiin ja vyöryfotodiodiin (ADP).
35 Optinen laite, jonka rakenne on tämän keksinnön mu- i.
5 82999 kainen, kuten edellä on selitetty, tarjoaa seuraavat teknisesti ansiokkaat ominaisuudet.
a) Koska juotekerroksen valuminen ja siirtyminen liittämisen yhteydessä estetään, ei juote pienennä läpi-5 näkyvän valonläpäisyosan pintaa tai tilaa. Tämä nostaa saantoa optisten laitteiden kokoonpanossa. Sovellettuna fotodiodiin ei tämä keksintö vähennä fotodiodin herkkyyttä, koska fotodiodi on varustettu metalloidulla kerroksella, esimerkiksi tinakerroksella liitosalueella eikä valoa vas-10 taanottavan ikkunan alueella. Koska metalloidun kerroksen, kuten tinakerroksen, paksuutta voidaan valvoa mielivaltaisesti 0,2 pm:n tarkkuudella, ei juote valu. b) Liitoksessa ei tarvita erityistä liitosainetta, kuten juotetta tai epoksihartsia. Tämä yksinkertaistaa tuotantoprosessia ja 15 parantaa tuottavuutta.
Vaikka yllä on esitetty ja selitetty keksinnön erityisiä suoritusmuotoja, on selvää, että nämä suoritusmuodot ovat pelkästään kuvausta ja selitystä varten ja että voidaan keksiä erilaisia muita muotoja poikkeamatta oheisten 20 patenttivaatimusten määrittelemästä suojapiiristä.

Claims (16)

1. Optinen laite, joka käsittää: alustan (21, 41), joka on läpinäkyvä tai jossa on 5 reikä (24, 43) valon päästämiseksi sen läpi, puolijohdepalan liitoslaipan (23, 42), joka on muodostettu alustalle (21, 41), ja optisen laitteen palan (61), joka on liitetty lii-toslaipalle (23, 42) ja järjestetty vastaanottamaan tai 10 lähettämään valoa sen liitetyltä sivulta, tunnettu siitä, että optisen laitteen palassa (61) on elektrodi (65) ja juotekerros (66), jotka on peräkkäisessä järjestyksessä asennettu sen liitetylle sivulle, jolloin kummassakin kerroksessa (65, 66) on reikä valon läpipäästämistä varten, 15 ja että optisen laitteen pala (61) on liitetty liitoslaip-paan (23, 42) juotekerroksen (66) avulla.
2. Patenttivaatimuksen 1 mukainen optinen laite, tunnettu siitä, että alusta on safiiria (21) tai keraaminen (41).
3. Patenttivaatimuksen 1 tai 2 mukainen optinen lai te, tunnettu siitä, että juotekerros (66) on tinaa, eutektista kulta-tinaseosta tai eutektista kulta-piiseosta.
4. Jonkin edellisen patenttivaatimuksen 1-3 mukainen optinen laite, tunnettu siitä, että juoteker- 25 roksen (66) paksuus on 5-10 pm.
5. Jonkin edellisen patenttivaatimuksen 1-4 mukainen optinen laite, tunnettu siitä, että juotekerros (66) on muodostettu pinnoittamalla tai höyrystämällä.
6. Jonkin edellisen patenttivaatimuksen 1-5 mukai-30 nen optinen laite, tunnettu siitä, että elektrodi (65) ja juotekerros (66) ovat kumpikin renkaanmuotoisia.
6 82999
7. Menetelmä optisen laitteen valmistamiseksi, tunnettu siitä, että se käsittää vaiheet: elektrodin (65), jossa on valoa läpipäästävä reikä, 35 asentamisen optisen laitteen palan (61) sille pinnalle, 7 82999 johon valo osuu, ja juotekerroksen (66) asentamisen tämän jälkeen mainitulle elektrodille, puolljohdepalan llltoslaipan (23, 42) asentamisen valoa läplpäästävälle alustalle (21, 41), ja 5 mainitulla optisen laitteen palalla (61) olevan elektrodin (65) liittämisen llltoslalppaan (23, 42) käyttämällä mainittua juotekerrosta (66), jolloin tuotetaan yhtenäinen optinen laite, johon puolijohdepala on liitetty stabiiliin tilaan.
8. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerros (66) on tinaa.
9. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerros (66) on eutektis-ta kulta-tinaseosta.
10. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerros (66) on eutektis-ta kulta-piiseosta.
11. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerroksen (66) paksuus 20 on 5-10 pm.
12. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että alusta (21, 41) on safiiria.
13. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että alusta (21, 41) on keraaminen.
14. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerros (66) muodostetaan päällystämällä.
15. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerros (66) muodostetaan 30 höyrystämällä.
16. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että sekä elektrodi (65) että juotekerros (66) ovat renkaanmuotoisia. 8 82999
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DK33291D0 (da) 1991-02-26
EP0145316A2 (en) 1985-06-19

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