DK33291A - Fremgangsmaade til fremstilling af en optisk komponent - Google Patents

Fremgangsmaade til fremstilling af en optisk komponent Download PDF

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Publication number
DK33291A
DK33291A DK033291A DK33291A DK33291A DK 33291 A DK33291 A DK 33291A DK 033291 A DK033291 A DK 033291A DK 33291 A DK33291 A DK 33291A DK 33291 A DK33291 A DK 33291A
Authority
DK
Denmark
Prior art keywords
procedure
manufacturing
optical component
optical
component
Prior art date
Application number
DK033291A
Other languages
English (en)
Other versions
DK33291D0 (da
Inventor
Hideaki Nishizawa
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58218964A external-priority patent/JPS60110180A/ja
Priority claimed from JP58223020A external-priority patent/JPS60113978A/ja
Priority claimed from JP58232341A external-priority patent/JPS60124885A/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of DK33291D0 publication Critical patent/DK33291D0/da
Publication of DK33291A publication Critical patent/DK33291A/da

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10W72/07333—
    • H10W72/07336—
    • H10W72/252—
    • H10W72/352—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5522—
    • H10W72/884—
    • H10W90/754—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Gyroscopes (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Die Bonding (AREA)
DK033291A 1983-11-21 1991-02-26 Fremgangsmaade til fremstilling af en optisk komponent DK33291A (da)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58218964A JPS60110180A (ja) 1983-11-21 1983-11-21 光素子用パツケ−ジ
JP58223020A JPS60113978A (ja) 1983-11-25 1983-11-25 光素子
JP58232341A JPS60124885A (ja) 1983-12-08 1983-12-08 受光ダイオードの製造方法

Publications (2)

Publication Number Publication Date
DK33291D0 DK33291D0 (da) 1991-02-26
DK33291A true DK33291A (da) 1991-02-26

Family

ID=27330223

Family Applications (2)

Application Number Title Priority Date Filing Date
DK547384A DK163761C (da) 1983-11-21 1984-11-16 Optisk komponent og hus til en saadan komponent.
DK033291A DK33291A (da) 1983-11-21 1991-02-26 Fremgangsmaade til fremstilling af en optisk komponent

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DK547384A DK163761C (da) 1983-11-21 1984-11-16 Optisk komponent og hus til en saadan komponent.

Country Status (8)

Country Link
US (2) US4663652A (da)
EP (2) EP0313174B1 (da)
AU (1) AU592256B2 (da)
CA (1) CA1267468A (da)
DE (2) DE3486214T2 (da)
DK (2) DK163761C (da)
FI (1) FI82999C (da)
NO (1) NO169684C (da)

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US5460318A (en) * 1994-06-01 1995-10-24 Gte Laboratories Incorporated Diebonding geometry for packaging optoelectronics
DE19600306C1 (de) * 1996-01-05 1997-04-10 Siemens Ag Halbleiter-Bauelement, insb. mit einer optoelektronischen Schaltung bzw. Anordnung
DE19621124A1 (de) * 1996-05-24 1997-11-27 Siemens Ag Optoelektronischer Wandler und dessen Herstellungsverfahren
US5822856A (en) * 1996-06-28 1998-10-20 International Business Machines Corporation Manufacturing circuit board assemblies having filled vias
US5949655A (en) * 1997-09-09 1999-09-07 Amkor Technology, Inc. Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device
US5867368A (en) * 1997-09-09 1999-02-02 Amkor Technology, Inc. Mounting for a semiconductor integrated circuit device
JP2000081524A (ja) * 1998-09-07 2000-03-21 Sony Corp 光送受信システム
US6216939B1 (en) * 1998-12-31 2001-04-17 Jds Uniphase Photonics C.V. Method for making a hermetically sealed package comprising at least one optical fiber feedthrough
US6448635B1 (en) 1999-08-30 2002-09-10 Amkor Technology, Inc. Surface acoustical wave flip chip
US6536958B2 (en) 2000-12-20 2003-03-25 Triquint Technology Holding Co. Optical device package with hermetically bonded fibers
US6564454B1 (en) * 2000-12-28 2003-05-20 Amkor Technology, Inc. Method of making and stacking a semiconductor package
GB2372633A (en) * 2001-02-24 2002-08-28 Mitel Semiconductor Ab Flip-chip mounted optical device
JP2002250846A (ja) * 2001-02-26 2002-09-06 Seiko Epson Corp 光モジュール及びその製造方法並びに光伝達装置
KR100424611B1 (ko) * 2001-04-20 2004-03-27 울트라테라 코포레이션 저형상 감광성 반도체 패키지
FR2832252B1 (fr) 2001-11-14 2004-03-12 St Microelectronics Sa Boitier semi-conducteur a capteur, muni d'un insert de fixation
JP2004179258A (ja) * 2002-11-25 2004-06-24 Hamamatsu Photonics Kk 紫外線センサ
US7564125B2 (en) * 2002-12-06 2009-07-21 General Electric Company Electronic array and methods for fabricating same
DE10308890A1 (de) * 2003-02-28 2004-09-09 Opto Tech Corporation Gehäusestruktur für eine Lichtemissionsdiode und Verfahren zu dessen Herstellung
US6883978B2 (en) * 2003-06-26 2005-04-26 Matsushita Electric Industrial Co., Ltd. Low cost package design for fiber coupled optical component
US7284913B2 (en) 2003-07-14 2007-10-23 Matsushita Electric Industrial Co., Ltd. Integrated fiber attach pad for optical package
US7410088B2 (en) * 2003-09-05 2008-08-12 Matsushita Electric Industrial, Co., Ltd. Solder preform for low heat stress laser solder attachment
US7021838B2 (en) 2003-12-16 2006-04-04 Matsushita Electric Industrial Co., Ltd. Optimizing alignment of an optical fiber to an optical output port
US7140783B2 (en) * 2004-02-06 2006-11-28 Matsushita Electric Industrial Co., Ltd. Diamond 2D scan for aligning an optical fiber to an optical output port
US20050202826A1 (en) * 2004-03-12 2005-09-15 Coretek Opto Corp. Optical subassembly
DE102004039883B3 (de) * 2004-08-17 2006-06-14 Schott Ag Transparentes Element, insbesondere Verbundglaselement, und Verfahren zum Tausch eines Verbrauchers darin
US7263260B2 (en) * 2005-03-14 2007-08-28 Matsushita Electric Industrial Co., Ltd. Low cost, high precision multi-point optical component attachment
CN100590890C (zh) * 2005-07-28 2010-02-17 中华电信股份有限公司 一种可施以被动封装的高速光电元件晶粒
JP2007165811A (ja) 2005-12-16 2007-06-28 Nichia Chem Ind Ltd 発光装置
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US20080012087A1 (en) * 2006-04-19 2008-01-17 Henri Dautet Bonded wafer avalanche photodiode and method for manufacturing same
JP5270569B2 (ja) * 2006-12-18 2013-08-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 透明基板上のｌｅｄの照明装置
US7514724B2 (en) * 2007-03-23 2009-04-07 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Solid state light source having a variable number of dies
CN102024717B (zh) 2010-08-21 2012-03-07 比亚迪股份有限公司 一种半导体芯片的共晶方法及共晶结构
DE102017126109A1 (de) * 2017-11-08 2019-05-09 Osram Opto Semiconductors Gmbh Licht emittierendes Bauelement und Verfahren zur Herstellung eines Licht emittierenden Bauelements
FR3094141A1 (fr) * 2019-03-18 2020-09-25 Commissariat à l'Energie Atomique et aux Energies Alternatives procede de fabrication d’un composant optoelectronique a transmission optique en face arriere
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Also Published As

Publication number Publication date
US4727649A (en) 1988-03-01
EP0313174B1 (en) 1993-09-22
AU592256B2 (en) 1990-01-04
EP0145316A3 (en) 1986-07-30
DE3481571D1 (de) 1990-04-12
FI82999B (fi) 1991-01-31
EP0145316A2 (en) 1985-06-19
US4663652A (en) 1987-05-05
EP0145316B1 (en) 1990-03-07
NO844596L (no) 1985-05-22
NO169684C (no) 1992-07-22
FI844473L (fi) 1985-05-22
AU1319788A (en) 1988-06-09
DK163761C (da) 1992-08-24
EP0313174A3 (en) 1989-11-15
DK33291D0 (da) 1991-02-26
DK163761B (da) 1992-03-30
DE3486214T2 (de) 1994-01-13
CA1267468C (en) 1990-04-03
FI844473A0 (fi) 1984-11-14
DE3486214D1 (de) 1993-10-28
CA1267468A (en) 1990-04-03
EP0313174A2 (en) 1989-04-26
FI82999C (fi) 1991-05-10
NO169684B (no) 1992-04-13
DK547384A (da) 1985-05-22
DK547384D0 (da) 1984-11-16

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