FI82999C - OPTICAL ANGLE FARING FOR FOUNDATION. - Google Patents

OPTICAL ANGLE FARING FOR FOUNDATION. Download PDF

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Publication number
FI82999C
FI82999C FI844473A FI844473A FI82999C FI 82999 C FI82999 C FI 82999C FI 844473 A FI844473 A FI 844473A FI 844473 A FI844473 A FI 844473A FI 82999 C FI82999 C FI 82999C
Authority
FI
Finland
Prior art keywords
solder layer
optical device
piece
electrode
substrate
Prior art date
Application number
FI844473A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI82999B (en
FI844473L (en
FI844473A0 (en
Inventor
Hideaki Nishizawa
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58218964A external-priority patent/JPS60110180A/en
Priority claimed from JP58223020A external-priority patent/JPS60113978A/en
Priority claimed from JP58232341A external-priority patent/JPS60124885A/en
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of FI844473A0 publication Critical patent/FI844473A0/en
Publication of FI844473L publication Critical patent/FI844473L/en
Priority to FI880867A priority Critical patent/FI91574C/en
Publication of FI82999B publication Critical patent/FI82999B/en
Application granted granted Critical
Publication of FI82999C publication Critical patent/FI82999C/en

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    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
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  • Engineering & Computer Science (AREA)
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  • Light Receiving Elements (AREA)
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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
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Description

1 829991 82999

Optinen laite ja menetelmä sen valmistamiseksi Tämä keksintö liittyy optisiin laitteisiin, kuten valodiodeihin ja fotodiodeihin, joilla on patenttivaati-5 muksen 1 johdanto-osassa annetut tunnusmerkit, ja menetelmään niiden valmistamiseksi.This invention relates to optical devices, such as light emitting diodes and photodiodes, having the features set forth in the preamble of claim 1, and to a method of making the same.

Keksinnön lähtökohtana oleva ongelma on fotodiodin käyttö suurella nopeudella. Koska fotodiodia käytetään käänteisesti esijännitetyssä tilassa, estää pn-rajapinnan 10 sähköinen kapasitanssi käytön suurella nopeudella. Valoa vastaanottavan alueen (pn-rajapinnan) alan pienentäminen vähentää sähköistä kapasitanssia. Tätä tarkoitusta varten voidaan käyttää kuviossa 1 esitettyä mesarakennetta.The problem underlying the invention is the use of a photodiode at high speed. Because the photodiode is inverted in the biased state, the electrical capacitance of the pn interface 10 prevents operation at high speed. Reducing the area of the light receiving region (pn interface) reduces the electrical capacitance. The mesa structure shown in Figure 1 can be used for this purpose.

n-InP-alustalle 31 muodostetaan epitaksiaalisen kas-15 vatuksen avulla p-InP-kerros 32. Alustan 31 ja kerroksen 32 välillä oleva kapea pn-rajapinta 33 toimii valoa vastaanottavana alueena. Lisäksi on p-InP-kerros 32 ja pn-rajapinta 33 syövytetty kaistaleiksi kohti n-InP alustaa 31 molemmilla puolilla valoa vastaanottavan alueen pienen-20 tämiseksi. Koska p-InP-kerros 32 on kaventunut kaistaleiksi, ei sen päälle enää voida kiinnittää renkaanmuotoista elektrodia. Sen mukaisesti kiinnitetään kaistaleenmuotoi-nen p-tyyppinen Au-Zn-elektrodi 34. Sitten tehdään valon kulku p-pinnasta mahdottomaksi. Sen sijaan kiinnitetään 25 p-InP-alustan 31 pohjaan renkaanmuotoinen, n-tyyppinen AuGeNi-elektrodi 35. Tällöin toimii n-InP-alustan 31 pohjan keskiosa valoa vastaanottavana pintana 36, jonka kautta valo saatetaan kulkemaan. Edellä selitetty fotodiodin pala 37 valmistetaan kiekkomenetelmällä, jossa sen jälkeen kun 30 joukko laitteita on valmistettu, puolijohdekiekko piirroi-tetaan ja jaetaan paloihin 37. Pala 37 on koteloitava. Toinen ongelma on fotodiodipalan 37 kiinnitys laipalle.A p-InP layer 32 is formed on the n-InP substrate 31 by epitaxial growth. A narrow pn interface 33 between the substrate 31 and the layer 32 acts as a light receiving region. In addition, the p-InP layer 32 and the pn interface 33 are etched into strips toward the n-InP substrate 31 on both sides to reduce the light-receiving area. Since the p-InP layer 32 has narrowed into strips, it is no longer possible to attach an annular electrode to it. Accordingly, a strip-shaped p-type Au-Zn electrode 34 is attached. The passage of light from the p-surface is then made impossible. Instead, a ring-shaped, n-type AuGeNi electrode 35 is attached to the bottom of the p-InP substrate 31. In this case, the central portion of the bottom of the n-InP substrate 31 acts as a light-receiving surface 36 through which light is passed. The photodiode piece 37 described above is manufactured by a wafer method in which, after a plurality of devices have been fabricated, the semiconductor wafer is drawn and divided into pieces 37. The piece 37 must be encapsulated. Another problem is the attachment of the photodiode piece 37 to the flange.

Tämän keksinnön päämääränä on tarjota fotodiodi, jossa fotodiodin pala voidaan liittää liitoslaippaan va-35 kaaseen tilaan.It is an object of the present invention to provide a photodiode in which a piece of photodiode can be connected to a connecting flange in a gas space.

2 82999 Tämän keksinnön eräänä muuna päämääränä on vielä tarjota fotodiodin valmistusta varten menetelmä, jossa fotodiodin pala voidaan liittää liitoslaippaan vakaaseen tilaan.It is a further object of the present invention to provide a method for manufacturing a photodiode in which a piece of photodiode can be connected to a connecting flange in a stable state.

5 Tämän keksinnön mukaiselle optiselle laitteelle on tunnusomaista, että optisen laitteen palassa on elektrodi ja juotekerros, jotka on peräkkäisessä järjestyksessä asennettu sen liitetylle sivulle, jolloin kummassakin kerroksessa on reikä valon läpipäästämistä varten, ja että op-10 tisen laitteen pala on liitetty liitoslaippaan juoteker-roksen avulla.The optical device of the present invention is characterized in that the piece of optical device has an electrode and a solder layer mounted sequentially on its connected side, each layer having a hole for light transmission, and the piece of optical device connected to the connecting flange of the solder layer. through.

Tämän keksinnön mukaisen optisen laitteen valmistusmenetelmälle on puolestaan tunnusomaista, että se käsittää vaiheet: 15 elektrodin, jossa on valoa läpipäästävä reikä, asen tamisen optisen laitteen palan sille pinnalle, johon valo osuu, ja juotekerroksen asentamisen tämän jälkeen mainitulle elektrodille, puolijohdepalan liitoslaipan asentamisen valoa läpi-20 päästävälle alustalle, ja mainitulla optisen laitteen palalla olevan elektrodin liittämisen liitoslaippaan käyttämällä mainittua juote-kerrosta, jolloin tuotetaan yhtenäinen optinen laite, johon puolijohdepala on liitetty stabiiliin tilaan.The method of manufacturing an optical device according to the present invention, in turn, is characterized in that it comprises the steps of: mounting an electrode having a light-transmitting hole on the surface of the optical device where the light hits, and subsequently installing a solder layer on said electrode; 20, and connecting the electrode on said piece of optical device to the connecting flange using said solder layer, thereby producing a unitary optical device to which the semiconductor piece is connected in a stable state.

25 Keksintöä kuvataan seuraavassa lähemmin viitaten oheiseen piirustukseen, jossa kuvio 1 on leikkauskuva tavanomaisen mesatyyppisen fotodiodipalan esimerkistä, kuvio 2 on leikkauskuva tämän keksinnön mukaisen 30 mesatyyppisen fotodiodin esimerkistä, kuvio 3 on leikkauskuva, joka esittää tilaa, jossa kuvion 2 mesatyyppinen fotodiodin pala sijoitetaan optisen laitteen kotelon safiirialustalle, ja kuvio 4 on leikkauskuva, joka esittää tilaa, jossa 35 kuvion 2 mesatyyppinen fotodiodin pala sijoitetaan optisen 3 82999 laitteen kotelon keramiikka-alustalle.The invention will now be described in more detail with reference to the accompanying drawing, in which Figure 1 is a sectional view of an example of a conventional mesate-type photodiode piece; Figure 2 is a sectional view to the sapphire substrate, and Fig. 4 is a sectional view showing a state in which the mesate-type photodiode piece of Fig. 2 is placed on the ceramic substrate of the housing of the optical 3 82999 device.

Seuraavassa selitetään yksityiskohtaisesti keksinnön suoritusmuotoa, jonka avulla voidaan ratkaista optisen laitteen palan liitoslaippaan kiinnittämiseen liittyvät 5 ongelmat, kuten juotteen valuminen valoa vastaanottavaan pintaan ja vaihtelut liitoksen lujuudessa. Tässä keksinnössä ei juotetta sijoiteta alustan puolelle, vaan juote-kerros sijoitetaan palan puolelle.An embodiment of the invention will be described in detail below, which can be used to solve the problems associated with attaching a piece of optical device to a connecting flange, such as the flow of solder on a light-receiving surface and variations in the strength of the connection. In the present invention, the solder is not placed on the side of the substrate, but the solder layer is placed on the side of the piece.

Kuvio 2 on leikkauskuva, joka esittää esimerkkiä, 10 jossa tätä keksintöä sovelletaan fotodiodin mesatyyppiseen palaan. Seostamaton epitakainen InGaAs-kerros kasvatetaan epitaksisen nestefaasiprosessin avulla Sn-seostetulle InP-alustalle 61, niin että sen hilarakenne sopii XnP-alustaan 61. Sitten muodostetaan Zn-diffuusion avulla p-tyyppinen 15 alue 63, jolloin syntyy pn-rajapinta. Sen jälkeen muodostetaan AuZnrn avulla p-puolen elektrodi 64, ja n-puolen elektrodi 65 muodostetaan AuGeNi:n avulla.Fig. 2 is a sectional view showing an example in which the present invention is applied to a mesathode piece of a photodiode. The unalloyed epitaxial InGaAs layer is grown by an epitaxial liquid phase process on the Sn-doped InP substrate 61 so that its lattice structure matches the XnP substrate 61. A p-type region 63 is then formed by Zn diffusion to form a pn interface. Thereafter, a AuZnrn through the p-side electrode 64 and the n-side electrode 65 of AuGeNi is formed by means of.

Lisäksi syövytetään pala kummaltakin puolelta pn-rajapinnan lähellä mesamuotoon sähköisen kapasitanssin pie-20 nentämiseksi. Sitten muodostetaan n-puolen elektrodin 65 alasivulle Sn-pinnoituskuvio käyttämällä pinnoitusliuoksena alkanolisulfonihappoa. Sn-pinnoitettua osaa kutsutaan tämän jälkeen juotekerrokseksi 66, koska se toimii juotteena. Sekä juotekerros 66 että n-puolen elektrodi 65 ovat renkaan 25 muotoisia ja palan alasivu keskiosa, joka on paljas, toimii valoa vastaanottavana pintana 67. Juotekerroksen 66 paksuus on 1-5,pm. Sen jälkeen puolijohdekiekko piirroite-taan ja jaetaan yksittäisiksi paloiksi. Juotekerros 66 muodostetaan tehokkaasti pinnoittamalla tai höyrystämällä. 30 Tinan lisäksi voidaan juotekerroksen 66 materiaalina käyttää eutektista AuSn-seosta tai eutektista AuSi-seosta.In addition, a piece is etched on each side near the pn interface into a meso shape to reduce the electrical capacitance. Then, a n-side electrode 65 of the underside of the Sn-plating using a plating solution alkanolisulfonihappoa FIG. The Sn-coated part is hereinafter referred to as solder layer 66 because it acts as a solder. Both the solder layer 66 and the n-side electrode 65 are shaped ring 25 and a piece of the lower side middle portion, which is exposed, is the light receiving surface 67. The thickness of the solder layer 66 is 1-5 m. The semiconductor wafer is then drawn and divided into individual pieces. The solder layer 66 is effectively formed by coating or evaporating. In addition to tin, a eutectic AuSn alloy or a eutectic AuSi alloy can be used as the material of the solder layer 66.

Tällä tavoin valmistetun fotodiodipalan liittämiseksi, käyttämällä tinaa juotteena, lämmitetään liitettävä kotelo lämpötilaan 250° ja pala juotekerroksineen 66 kiin-35 nitetään koteloon ja kohdistetaan laippaan ja liitetään 4 82999 siihen. Tässä vaiheessa ei tarvita muuta juotetta, koska palan alasivulla oleva juotekerros sulaa hetkellisesti ja jähmettyy sitten kiinnittääkseen palan lujasti.To connect the photodiode piece thus prepared, using tin as a solder, the housing to be connected is heated to 250 ° and the piece with solder layers 66 is attached to the housing and aligned with the flange and connected to 4,8999. No other solder is needed at this stage because the solder layer on the underside of the piece melts momentarily and then solidifies to firmly secure the piece.

Kokeissa liitettiin fotodiodin pala koteloon erit-5 täin tyydyttävästi, kun tinapinnoitteen paksuus oli 5-10 pm. Kun tinapinnoitteen paksuus oli 5 pm tai alle, vaih-teli liitoksen lujuus ja oli epävakaa. Kun tinapinnoitteen paksuus oli 10 pm tai yli, tinajuote valui ja oli vaihte-leva.In the experiments, a piece of photodiode was attached to the housing very satisfactorily when the thickness of the tin coating was 5-10 μm. When the thickness of the tin coating was 5 μm or less, the strength of the joint varied and was unstable. When the thickness of the tin coating was 10 μm or more, the tin solder flowed and was variable.

10 Tässä keksinnössä on juotekerros palan puolella.The present invention has a solder layer on the side of the piece.

Juotekerros liittää palan kotelon alustaan. Alustan ja kotelon materiaali ja muoto ovat mielivaltaiset.The solder layer attaches the piece to the base of the housing. The material and shape of the base and housing are arbitrary.

Kuvio 3 on leikkauskuva rakenteesta, jossa mainittu fotodiodin pala on kiinnitetty litteätyyppiseen kote-15 loon, jossa käytetään safiirialustaa 21. Kuvion 2 optisen laitteen pala asetetaan suoraan (käyttämättä uutta juotetta) liitoslaipalle 23 ja liitetään siihen n-puolen elektrodin 65 ja laipan 23 kiinnittämiseksi lujasti siihen. P-puolen elektrodi 64 lankaliitetään laippaan 28 langalla 30. 20 Valo kulkee safiirialustan 21 ja laipan 23 aukon 24 kautta ja saapuu valoa vastaanottavaan pintaan 67. Tässä rakenteessa ei juotekerros 66 valu eikä siirry.Figure 3 is a sectional view of the structure in which said photodiode chip is attached to the flat-type kote-15 flask, using a sapphire substrate piece 21. Figure 2 the optical device is placed directly (without using new solder), a connecting flange 23 and is connected to the n-side electrode 65 and the flange 23 to securely retain the thereto. P-side electrode wire 64 is connected to the flange 28 of wire 30. The light 20 passes through the sapphire substrate 21 and the flange 23 of the opening 24 and enters the light receiving surface 67. In this structure, no alloy solder layer 66 and does not move.

Kuvio 4 on leikkauskuva, joka esittää rakennetta, jossa mainittu fotodiodin pala on kiinnitetty koteloon, 25 jossa on keramiikka-alusta. Lankaliitäntää, johdinta ja kotelon ulkomuotoa ei esitetä, koska ne voidaan valita mielivaltaisesti. Kuviossa 4 ei keramiikka-alustaa ole varustettu juotteella, vaan palan puolella oleva juotekerros 66 toimii juotteena palan kiinnittämiseksi lujasti 30 laippaan 42.Fig. 4 is a sectional view showing a structure in which said piece of photodiode is attached to a housing 25 having a ceramic substrate. The wire connection, cable, and housing appearance are not shown because they can be selected arbitrarily. In Figure 4, the ceramic substrate is not provided with solder, but the solder layer 66 on the piece side acts as a solder to firmly secure the piece 30 to the flange 42.

Vaikka tätä keksintöä on edellä selitetty viitaten erityisiin sovellutuksiin, on selvää, että tätä keksintöä voidaan soveltaa kaikkiin optisiin laitteisiin, kuten ta-sotyyppiseen fotodiodiin ja vyöryfotodiodiin (ADP).Although the present invention has been described above with reference to specific applications, it is clear that the present invention can be applied to all optical devices such as a plane-type photodiode and an avalanche photodiode (ADP).

35 Optinen laite, jonka rakenne on tämän keksinnön mu- i.An optical device having a structure according to the present invention.

5 82999 kainen, kuten edellä on selitetty, tarjoaa seuraavat teknisesti ansiokkaat ominaisuudet.5 82999 kaine, as explained above, offers the following technically meritorious features.

a) Koska juotekerroksen valuminen ja siirtyminen liittämisen yhteydessä estetään, ei juote pienennä läpi-5 näkyvän valonläpäisyosan pintaa tai tilaa. Tämä nostaa saantoa optisten laitteiden kokoonpanossa. Sovellettuna fotodiodiin ei tämä keksintö vähennä fotodiodin herkkyyttä, koska fotodiodi on varustettu metalloidulla kerroksella, esimerkiksi tinakerroksella liitosalueella eikä valoa vas-10 taanottavan ikkunan alueella. Koska metalloidun kerroksen, kuten tinakerroksen, paksuutta voidaan valvoa mielivaltaisesti 0,2 pm:n tarkkuudella, ei juote valu. b) Liitoksessa ei tarvita erityistä liitosainetta, kuten juotetta tai epoksihartsia. Tämä yksinkertaistaa tuotantoprosessia ja 15 parantaa tuottavuutta.a) Since the flow and displacement of the solder layer during joining is prevented, the solder does not reduce the surface or space of the light transmitting portion visible through-5. This increases the yield in the assembly of optical devices. When applied to a photodiode, the present invention does not reduce the sensitivity of the photodiode because the photodiode is provided with a metallized layer, for example, a tin layer in the junction area and not in the region of the light-receiving window. Since the thickness of the metallized layer, such as the tin layer, can be controlled arbitrarily with an accuracy of 0.2 μm, no solder casting. b) The joint does not require a special joint, such as solder or epoxy resin. This simplifies the production process and improves productivity.

Vaikka yllä on esitetty ja selitetty keksinnön erityisiä suoritusmuotoja, on selvää, että nämä suoritusmuodot ovat pelkästään kuvausta ja selitystä varten ja että voidaan keksiä erilaisia muita muotoja poikkeamatta oheisten 20 patenttivaatimusten määrittelemästä suojapiiristä.Although specific embodiments of the invention have been shown and described above, it is to be understood that these embodiments are for purposes of illustration and description only, and that various other embodiments may be devised without departing from the scope of the appended claims.

Claims (16)

1. Optinen laite, joka käsittää: alustan (21, 41), joka on läpinäkyvä tai jossa on 5 reikä (24, 43) valon päästämiseksi sen läpi, puolijohdepalan liitoslaipan (23, 42), joka on muodostettu alustalle (21, 41), ja optisen laitteen palan (61), joka on liitetty lii-toslaipalle (23, 42) ja järjestetty vastaanottamaan tai 10 lähettämään valoa sen liitetyltä sivulta, tunnettu siitä, että optisen laitteen palassa (61) on elektrodi (65) ja juotekerros (66), jotka on peräkkäisessä järjestyksessä asennettu sen liitetylle sivulle, jolloin kummassakin kerroksessa (65, 66) on reikä valon läpipäästämistä varten, 15 ja että optisen laitteen pala (61) on liitetty liitoslaip-paan (23, 42) juotekerroksen (66) avulla.An optical device comprising: a substrate (21, 41) which is transparent or has 5 holes (24, 43) for transmitting light therethrough, a connecting flange (23, 42) of a semiconductor chip formed on the substrate (21, 41) , and an optical device piece (61) connected to the connecting flange (23, 42) and arranged to receive or transmit light from its connected side, characterized in that the optical device piece (61) has an electrode (65) and a solder layer (66). ) mounted sequentially on its connected side, each layer (65, 66) having a hole for light transmission, 15 and that the piece (61) of the optical device is connected to the connecting flange (23, 42) by means of a solder layer (66). 2. Patenttivaatimuksen 1 mukainen optinen laite, tunnettu siitä, että alusta on safiiria (21) tai keraaminen (41).Optical device according to Claim 1, characterized in that the substrate is sapphire (21) or ceramic (41). 3. Patenttivaatimuksen 1 tai 2 mukainen optinen lai te, tunnettu siitä, että juotekerros (66) on tinaa, eutektista kulta-tinaseosta tai eutektista kulta-piiseosta.Optical device according to Claim 1 or 2, characterized in that the solder layer (66) is made of tin, a eutectic gold-tin alloy or a eutectic gold-silicon alloy. 4. Jonkin edellisen patenttivaatimuksen 1-3 mukainen optinen laite, tunnettu siitä, että juoteker- 25 roksen (66) paksuus on 5-10 pm.Optical device according to one of the preceding claims 1 to 3, characterized in that the thickness of the solder layer (66) is 5 to 10 μm. 5. Jonkin edellisen patenttivaatimuksen 1-4 mukainen optinen laite, tunnettu siitä, että juotekerros (66) on muodostettu pinnoittamalla tai höyrystämällä.Optical device according to one of the preceding claims 1 to 4, characterized in that the solder layer (66) is formed by coating or evaporating. 6. Jonkin edellisen patenttivaatimuksen 1-5 mukai-30 nen optinen laite, tunnettu siitä, että elektrodi (65) ja juotekerros (66) ovat kumpikin renkaanmuotoisia.Optical device according to one of the preceding claims 1 to 5, characterized in that the electrode (65) and the solder layer (66) are each annular. 6 829996 82999 7. Menetelmä optisen laitteen valmistamiseksi, tunnettu siitä, että se käsittää vaiheet: elektrodin (65), jossa on valoa läpipäästävä reikä, 35 asentamisen optisen laitteen palan (61) sille pinnalle, 7 82999 johon valo osuu, ja juotekerroksen (66) asentamisen tämän jälkeen mainitulle elektrodille, puolljohdepalan llltoslaipan (23, 42) asentamisen valoa läplpäästävälle alustalle (21, 41), ja 5 mainitulla optisen laitteen palalla (61) olevan elektrodin (65) liittämisen llltoslalppaan (23, 42) käyttämällä mainittua juotekerrosta (66), jolloin tuotetaan yhtenäinen optinen laite, johon puolijohdepala on liitetty stabiiliin tilaan.A method of manufacturing an optical device, characterized in that it comprises the steps of: mounting an electrode (65) having a light-transmitting hole 35 on the surface of the piece (61) of optical device on which light hits, and mounting a solder layer (66) thereon; after said electrode, mounting the semiconductor piece insertion flange (23, 42) on the light transmitting substrate (21, 41), and connecting the electrode (65) on said optic piece (61) to the insertion pad (23, 42) using said solder layer (66), producing a unitary optical device to which a semiconductor chip is connected to a stable state. 8. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerros (66) on tinaa.Method according to Claim 7, characterized in that the solder layer (66) is tin. 9. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerros (66) on eutektis-ta kulta-tinaseosta.Method according to Claim 7, characterized in that the solder layer (66) is made of a eutectic gold-alloy mixture. 10. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerros (66) on eutektis-ta kulta-piiseosta.Method according to Claim 7, characterized in that the solder layer (66) is made of a eutectic gold-silicon alloy. 11. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerroksen (66) paksuus 20 on 5-10 pm.Method according to Claim 7, characterized in that the solder layer (66) has a thickness of 20 to 10 μm. 12. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että alusta (21, 41) on safiiria.Method according to Claim 7, characterized in that the substrate (21, 41) is sapphire. 13. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että alusta (21, 41) on keraaminen.Method according to Claim 7, characterized in that the substrate (21, 41) is ceramic. 14. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerros (66) muodostetaan päällystämällä.Method according to Claim 7, characterized in that the solder layer (66) is formed by coating. 15. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että juotekerros (66) muodostetaan 30 höyrystämällä.Method according to Claim 7, characterized in that the solder layer (66) is formed by evaporation. 16. Patenttivaatimuksen 7 mukainen menetelmä, tunnettu siitä, että sekä elektrodi (65) että juotekerros (66) ovat renkaanmuotoisia. 8 82999Method according to Claim 7, characterized in that both the electrode (65) and the solder layer (66) are annular. 8 82999
FI844473A 1983-11-21 1984-11-14 OPTICAL ANGLE FARING FOR FOUNDATION. FI82999C (en)

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FI880867A FI91574C (en) 1983-11-21 1988-02-24 Housing for an optical device and a method of manufacturing the optical device

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JP58218964A JPS60110180A (en) 1983-11-21 1983-11-21 Package for photoelement
JP21896483 1983-11-21
JP22302083 1983-11-25
JP58223020A JPS60113978A (en) 1983-11-25 1983-11-25 Optical element
JP58232341A JPS60124885A (en) 1983-12-08 1983-12-08 Light-receiving diode and manufacture thereof
JP23234183 1983-12-08

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DK33291D0 (en) 1991-02-26
CA1267468C (en) 1990-04-03
DK547384A (en) 1985-05-22
DK163761B (en) 1992-03-30
EP0313174A3 (en) 1989-11-15
EP0313174A2 (en) 1989-04-26
DE3486214T2 (en) 1994-01-13
FI82999B (en) 1991-01-31
DK163761C (en) 1992-08-24
US4727649A (en) 1988-03-01
FI844473L (en) 1985-05-22
FI844473A0 (en) 1984-11-14
EP0313174B1 (en) 1993-09-22
DK33291A (en) 1991-02-26
EP0145316A2 (en) 1985-06-19
EP0145316B1 (en) 1990-03-07
US4663652A (en) 1987-05-05
AU1319788A (en) 1988-06-09
DE3486214D1 (en) 1993-10-28
CA1267468A (en) 1990-04-03
AU592256B2 (en) 1990-01-04
EP0145316A3 (en) 1986-07-30
NO169684C (en) 1992-07-22
NO169684B (en) 1992-04-13
DK547384D0 (en) 1984-11-16
DE3481571D1 (en) 1990-04-12
NO844596L (en) 1985-05-22

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