EP3580539A1 - Integrierte digitale kraftsensoren und zugehörige verfahren zur herstellung - Google Patents

Integrierte digitale kraftsensoren und zugehörige verfahren zur herstellung

Info

Publication number
EP3580539A1
EP3580539A1 EP18751209.0A EP18751209A EP3580539A1 EP 3580539 A1 EP3580539 A1 EP 3580539A1 EP 18751209 A EP18751209 A EP 18751209A EP 3580539 A1 EP3580539 A1 EP 3580539A1
Authority
EP
European Patent Office
Prior art keywords
sensor die
mems
force
sensing element
force sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18751209.0A
Other languages
English (en)
French (fr)
Other versions
EP3580539A4 (de
Inventor
Ali FOUGHI
Ryan DIESTELHORST
Dan Benjamin
Julius Minglin TSAI
Michael Dueweke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nextinput Inc
Original Assignee
Nextinput Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nextinput Inc filed Critical Nextinput Inc
Publication of EP3580539A1 publication Critical patent/EP3580539A1/de
Publication of EP3580539A4 publication Critical patent/EP3580539A4/de
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0728—Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit

Definitions

  • MEMS microelectromechanical
  • the MEMS force sensing dies and/or MEMS switches can be used for converting force into a digital output code.
  • a MEMS force sensor including a plurality of sensing elements and digital circuitry positioned on a surface of the force sensor die is described herein.
  • Each sensing element can include a flexure and a sensing element (e.g., piezoresistive strain gauge).
  • a sensing element e.g., piezoresistive strain gauge
  • four sensing elements can be employed, although additional or fewer sensing elements can also be used.
  • CMOS complementary metal-oxide-semiconductor
  • the MEMS force sensors described herein can be manufactured by bonding a cap wafer to a base wafer (e.g., a force sensor die) that has both the sensing element(s) (e.g., piezoresistive strain gauge(s)) and CMOS power, processing, and communication circuitry.
  • Sensing elements can be formed by etching flexures on the top side of the base wafer.
  • the bond between the base and cap wafers can include a gap produced by protrusions sculptured either on the top of the base wafer and/or on the bottom of the cap wafer. The gap can be designed to limit the displacement of the cap wafer in order to provide force overload protection for the MEMS force sensors.
  • the protrusions and outer wall of the base wafer deflect with applied force, straining the sensing element(s) and producing an analog output signal.
  • the analog output signal can be digitized and stored in on-chip registers of the CMOS circuitry until requested by a host device.
  • a wafer level MEMS mechanical switch including a base and a cap is also described herein.
  • the mechanical switch employs at least one sensing element.
  • the at least one sensing element is electrically connected to integrated CMOS circuitry on the same substrate.
  • the CMOS circuitry can amplify, digitize, and calibrate force values, which are compared to programmable force thresholds to modulate digital outputs.
  • a MEMS switch including a plurality of sensing elements positioned on the surface of the switch die is also described herein.
  • four sensing elements can be employed, although additional or fewer sensing elements may also be used.
  • the sensing elements can have their analog outputs digitized and compared against multiple programmed force levels, outputting a digital code to indicate the current state of the switch.
  • the MEMS switch can be made compact as to only require a small number of input/output ("I/O") terminals.
  • the outputs of the device can be configured to indicate 2 N input force levels, where N is the number of output terminals, which can be programmed by the user.
  • the device's response can optionally be filtered such that only dynamic forces are measured.
  • the resulting device is a fully-configurable, multi-level, dynamic digital switch.
  • the MEMS force sensor can include a sensor die configured to receive an applied force.
  • the sensor die has a top surface and a bottom surface opposite thereto.
  • the MEMS force sensor can also include a sensing element and digital circuitry arranged on the bottom surface of the sensor die.
  • the sensing element can be configured to convert a strain on the bottom surface of the sensor die to an analog electrical signal that is proportional to the strain.
  • the digital circuitry can be configured to convert the analog electrical signal to a digital electrical output signal.
  • the sensing element can be a piezoresistive, piezoelectric, or capacitive transducer.
  • the MEMS force sensor can further include a plurality of electrical terminals arranged on the bottom surface of the sensor die.
  • the digital electrical output signal produced by the digital circuitry can be routed to the electrical terminals.
  • the electrical terminals can be solder bumps or copper pillars.
  • the MEMS force sensor can further include a cap attached to the sensor die.
  • the cap can be bonded to the sensor die at a surface defined by an outer wall of the sensor die.
  • a sealed cavity can be formed between the cap and the sensor die.
  • the sensor die can include a flexure formed therein.
  • the flexure can convert the applied force into the strain on the bottom surface of the sensor die.
  • the flexure can be formed in the sensor die by etching.
  • the sensing element is arranged on the flexure.
  • a gap can be arranged between the sensor die and the cap.
  • the gap can be configured to narrow with application of the applied force such that the flexure is unable to deform beyond its breaking point.
  • the digital circuitry can be further configured to provide a digital output code based on a plurality of predetermined force thresholds.
  • the method can include forming at least one sensing element on a surface of a force sensor die, and forming complementary metal-oxide-semiconductor ("CMOS") circuitry on the surface of the force sensor die.
  • CMOS complementary metal-oxide-semiconductor
  • the at least one sensing element can be configured with a characteristic that is compatible with a downstream CMOS process.
  • the at least one sensing element can be formed before forming the CMOS circuitry.
  • the characteristic can be a thermal anneal profile of the at least one sensing element.
  • the method can further include etching an opposite surface of the force sensor die to form an overload gap, etching the opposite surface of the force sensor die to form a trench, and bonding of a cap wafer to the opposite surface of the force sensor die to seal a cavity between the cap wafer and the force sensor die.
  • the cavity can be defined by the trench.
  • the method can further include forming of a plurality of electrical terminals on the opposite surface of the force sensor die.
  • the force sensor die can be made of p-type or n-type silicon.
  • the at least one sensing element can be formed using an implant or deposition process.
  • the CMOS circuitry can be configured to amplify and digitize an analog electrical output signal produced by the at least one sensing element.
  • the trench can be configured to increase strain on the at least one sensing element when a force is applied to the MEMS force sensor.
  • a depth of the overload gap can be configured to provide overload protection for the MEMS force sensor.
  • the electrical terminals can be solder bumps or copper pillars.
  • the MEMS switch can include a sensor die configured to receive an applied force.
  • the sensor die has a top surface and a bottom surface opposite thereto.
  • the MEMS switch can also include a sensing element and digital circuitry arranged on the bottom surface of the sensor die.
  • the sensing element can be configured to convert a strain on the bottom surface of the sensor die to an analog electrical signal that is proportional to the strain.
  • the digital circuitry can be configured to convert the analog electrical signal to a digital signal, and provide a digital output code based on a plurality of predetermined force thresholds.
  • the digital circuitry can be further configured to compare the digital signal to the predetermined force thresholds.
  • the predetermined force thresholds are relative to a baseline.
  • the digital circuitry can be further configured to update the baseline at a predetermined frequency.
  • the baseline can be updated by comparing the digital signal to an auto-calibration threshold.
  • Figure 1 is an isometric view of the top of an example MEMS force sensor according to implementations described herein.
  • Figure 2 is a top view of the MEMS force sensor of Figure 1.
  • Figure 3 is a cross-sectional view of the MEMS force sensor of Figure 1.
  • Figure 4 is an isometric view of the bottom of the MEMS force sensor of Figure 1.
  • Figure 5 is a cross-sectional view of an example base wafer of an integrated p-type MEMS-CMOS force sensor using a piezoresistive sensing element (not to scale) according to implementations described herein.
  • Figure 6 is a cross-sectional view of an example base wafer of an integrated n-type MEMS-CMOS force sensor using a piezoresistive sensing element (not to scale) according to implementations described herein.
  • Figure 7 is a cross-sectional view of an example base wafer of an integrated p-type MEMS-CMOS force sensor using a polysilicon sensing element (not to scale) according to
  • Figure 8 is a cross-sectional view of an example base wafer of an integrated p-type MEMS-CMOS force sensor using a piezoelectric sensing element (not to scale) according to implementations described herein.
  • Figure 9 is an isometric view of the top of an example MEMS switch according to implementations described herein.
  • Figure 10 is an isometric view of the bottom of the MEMS switch of Figure 9.
  • Figure 11 is an example truth table describing the outputs of a two-bit digital output.
  • Figure 12 depicts a flow chart describing an example baselining process.
  • Ranges can be expressed herein as from “about” one particular value, and/or to "about” another particular value. When such a range is expressed, another aspect includes from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximations, by use of the antecedent "about,” it will be understood that the particular value forms another aspect. It will be further understood that the endpoints of each of the ranges are significant both in relation to the other endpoint, and independently of the other endpoint.
  • the force sensor 10 for measuring a force applied to at least a portion thereof is described herein.
  • the force sensor 10 includes a base 11 (also sometimes referred to as a "sensor die” or “force sensor die”) and a cap 12.
  • the base 11 and the cap 12 can be bonded at one or more points along the surface formed by an outer wall 13 of the base 11.
  • the base 11 and the cap 12 can be bonded at a peripheral region of the MEMS force sensor 10. It should be understood that the peripheral region of the MEMS force sensor 10 is spaced apart from the center thereof, i.e., the peripheral region is arranged near the outer edge of the MEMS force sensor 10.
  • Example MEMS force sensors where a cap and sensor die are bonded in peripheral region of the MEMS force sensor are described in U.S. Patent No. 9,487,388, issued November 8, 2016 and entitled “Ruggedized MEMS Force Die;” U.S. Patent No. 9,493,342, issued November 15, 2016 and entitled “Wafer Level MEMS Force Dies;” U.S. Patent Application Publication No. 2016/0332866 to Brosh et al., filed January 13, 2015 and entitled “Miniaturized and ruggedized wafer level mems force sensors;” and U.S. Patent Application Publication No.
  • the bonded area(s) can therefore be arranged in proximity to the outer edge of the MEMS force sensor 10 as opposed to in proximity to the central region thereof. This allows the bonded area(s) to take up a large percentage of the surface area between the cap 12 and the base 11, which results in a MEMS force sensor with improved strength and robustness.
  • the cap 12 can optionally be made of glass (e.g., borosilicate glass) or silicon.
  • the base 11 can optionally be made of silicon.
  • the base 11 (and its components such as, for example, the boss, the outer wall, the flexure(s), etc.) is a single continuous piece of material, i.e., the base 11 is monolithic. It should be understood that this disclosure contemplates that the cap 12 and/or the base 11 can be made from materials other than those provided as examples.
  • This disclosure contemplates that the cap 12 and the base 11 can be bonded using techniques known in the art including, but not limited to, silicon fusion bonding, anodic bonding, glass frit, thermo-compression, and eutectic bonding.
  • the internal surfaces between the base 11 and the cap 12 form a sealed cavity 14.
  • the sealed cavity 14 can be formed by etching a trench (e.g., as described below with regard to Figs. 5-8) from the base 11 and then sealing a volume between the bonded base 11 and cap 12. For example, the volume is sealed between the base 11 and the cap 12 when adhered together, which results in formation of the sealed cavity 14.
  • the trench can be etched by removing material from the base 11 (e.g., the deep etching process described herein). Additionally, the trench defines the outer wall 13 and at least one flexure 16. In Figs. 1-3, the trench is continuous and has a substantially square shape.
  • the trench can have other shapes, sizes, and/or patterns than the trench shown in Figs. 1-3, which is only provided as an example.
  • the trench can form a plurality of outer walls and/or a plurality of flexures.
  • Example MEMS force sensors having a cavity (e.g., trench) that defines a flexible sensing element (e.g., flexure) are described in U.S. Patent No. 9,487,388, issued November 8, 2016 and entitled “Ruggedized MEMS Force Die;" U.S. Patent No. 9,493,342, issued November 15, 2016 and entitled “Wafer Level MEMS Force Dies;" U.S. Patent Application Publication No.
  • the sealed cavity 14 can be sealed between the cap 12 and the base 11 when the cap 12 and the base 11 are bonded together.
  • the MEMS force sensor 10 has a sealed cavity 14 that defines a volume entirely enclosed by the cap 12 and the base 11. The sealed cavity 14 is sealed from the external environment.
  • the base 11 has a top surface 18a and a bottom surface 18b.
  • the top and bottom surfaces 18a, 18b are arranged opposite to each other.
  • the trench that defines the outer wall 13 and flexure 16 is etched from the top surface 18a of the base 11.
  • a contact surface 15 is arranged along a surface of the cap 12 (e.g., along the top surface thereof) for receiving an applied force "F.”
  • the force "F” is transmitted from the cap 12 through the outer wall 13 to at least one flexure 16.
  • the MEMS force sensor 10 can include an air gap 17 (also sometimes referred to as a "gap" or “overload gap”) between a portion of the base 11 and cap 12.
  • the air gap 17 can be within the sealed cavity 14.
  • the air gap 17 can be formed by removing material from the base 11 (e.g., the shallow etching process described herein). Alternatively, the air gap 17 can be formed by etching a portion of the cap 12. Alternatively, the air gap 17 can be formed by etching a portion of the base 11 and a portion of the cap 12. The size (e.g., thickness or depth) of the air gap 17 can be determined by the maximum deflection of the at least one flexure 16, such that the air gap 17 between the base 11 and the cap 12 will close and mechanically stop further deflection before the at least one flexure 16 is broken. The air gap 17 provides an overload stop by limiting the amount by which the at least one flexure 16 can deflect such that the flexure does not mechanically fail due to the application of excessive force.
  • Example MEMS force sensors designed to provide overload protection are described in U.S. Patent No. 9,487,388, issued November 8, 2016 and entitled “Ruggedized MEMS Force Die;” U.S. Patent No. 9,493,342, issued November 15, 2016 and entitled “Wafer Level MEMS Force Dies;” U.S. Patent Application Publication No. 2016/0332866 to Brosh et al., filed January 13, 2015 and entitled
  • the MEMS force sensor 10 includes at least one sensing element 22 disposed on the bottom surface 18b of the base 11.
  • a plurality of sensing elements 22 can be disposed on the bottom surface 18b of the base 11.
  • the sensing element 22 can change an electrical characteristic (e.g., resistance, capacitance, charge, etc.) in response to deflection of the at least one flexure 16. The change in electrical characteristic can be measured as the analog electrical signal as described herein.
  • the sensing element 22 can optionally be a piezoresistive transducer.
  • a piezoresistive transducer For example, as strain is induced in the at least one flexure 16 proportional to the force "F" applied to the contact surface 15, a localized strain is produced on the piezoresistive transducer such that the piezoresistive transducer experiences compression or tension, depending on its specific orientation. As the piezoresistive transducer compresses and tenses, its resistivity changes in opposite fashion.
  • a Wheatstone bridge circuit including a plurality (e.g., four) piezoresistive transducers (e.g., two of each orientation relative to strain) becomes unbalanced and produces a differential voltage (also sometimes referred to herein as an "analog electrical signal") across the positive signal terminal and the negative signal terminal.
  • This differential voltage is directly proportional to the applied force "F" on the cap 12 of the MEMS force sensor 10.
  • this differential voltage can be received at and processed by digital circuitry (e.g., CMOS circuitry 23), which is also disposed on the base 11.
  • the digital circuitry can be configured to, among other functions, convert the analog electrical signal to a digital electrical output signal.
  • the at least one sensing element 22 can be any sensor element configured to change at least one electrical characteristic (e.g., resistance, charge, capacitance, etc.) based on an amount or magnitude of an applied force and can output a signal proportional to the amount or magnitude of the applied force.
  • Other types of sensing elements include, but not limited to, piezoelectric or capacitive sensors.
  • analog electrical signals produced by the at least one sensing element 22 in a Wheatstone bridge configuration can optionally be processed by digital circuitry that resides on the same surface as the at least one sensing element 22.
  • the digital circuitry is CMOS circuitry 23.
  • the CMOS circuitry 23 can therefore be disposed on the bottom surface 18b of the base 11 as shown in Fig. 4.
  • both the sensing element 22 and the CMOS circuitry 23 can be provided on the same monolithic substrate (e.g., the base 11, which can optionally be made of silicon). This is as opposed to routing the analog electrical signals produced by the at least one sensing element 22 to digital circuitry external to the MEMS force sensor 10 itself. It should be understood that routing the analog electrical signal to circuitry external to the MEMS force sensor 10 may result in loss of signal integrity due to electrical noise.
  • the CMOS circuitry 23 can optionally include one or more of a differential amplifier or buffer, an analog-to-digital converter, a clock generator, non-volatile memory, and a communication bus. Additionally, the CMOS circuitry 23 can optionally include programmable memory to store trimming values that can be set during a factory calibration. The trimming values can be used to ensure that the MEMS force sensor 10 provides an accurate absolute force output within a specified margin of error. Furthermore, the programmable memory can optionally store a device identifier ("ID") for traceability.
  • ID device identifier
  • CMOS circuitry is known in the art and is therefore not described in further detail below. This disclosure contemplates that the CMOS circuitry 23 can include circuits other than those provided as examples.
  • CMOS circuitry 23 can optionally include components to improve accuracy, such as an internal voltage regulator or a temperature sensor.
  • the differential analog output of the Wheatstone bridge can be amplified, digitized, and stored in a communication buffer until it is requested by a host device.
  • the MEMS force sensor 10 can also include at least one electrical terminal 19 as shown in Figs. 3 and 4.
  • the electrical terminals 19 can be power and/or communication interfaces used to connect (e.g., electrically, communicatively) to a host device.
  • the electrical terminals 19 can be solder bumps or metal (e.g., copper) pillars to allow for wafer-level packaging and flip-chip assembly.
  • the electrical terminals 19 can be any component capable of electrically connecting the MEMS force sensor 10 to a host device. Additionally, it should be understood that the number and/or arrangement of electrical terminals 19 is provided only as examples in Figs. 3 and 4.
  • the process of forming the at least one sensing element 22 and the CMOS circuitry 23 on the same surface (e.g., the bottom surface 18b) of the base 11 can be generalized as a three-stage process.
  • the first stage is the creation of the at least one sensing element 22 by way of either diffusion, deposition, or implant patterned with a lithographic exposure process.
  • the second stage is the creation of the CMOS circuitry 23 through standard CMOS process procedures.
  • the third stage is the creation of base 11 elements, which includes the outer wall 13, sealed cavity 14, at least one flexure 16, and air gap 17. It is contemplated that these stages can be performed in any order that the
  • the first stage includes the steps to form the at least one sensing element (e.g., sensing element 22 shown in Fig. 4).
  • sensing element 22 shown in Fig. 4
  • common CMOS processes begin with a p-type silicon wafer 101.
  • This disclosure contemplates that a p-type silicon wafer can be used to manufacture the MEMS force sensor described above with regard to Figs. 1-4. It should be
  • the sensing element e.g., at least one sensing element 22 shown in Fig. 4
  • the sensing element can be implemented as either an n-type diffusion, deposition, or implant 102 as shown in Fig. 5, or a p- type diffusion, deposition, or implant 202 fully contained in an n-type well 204 as shown in Fig. 6.
  • the terminals of the sensing element include highly-doped n-type implants 103 that connect to the n-type diffusion, deposition, or implant 102.
  • the terminals of the sensing element include highly-doped p-type implants 203 that connect to the p-type diffusion, deposition, or implant 202, while the n-type well 204 receives a voltage bias through a highly-doped n- type implant 105.
  • the sensing element can be implemented as either an n-type or p-type poly-silicon implant 302 as shown in Fig. 7, which is available in the common CMOS process as gate or capacitor layers through n-type or p-type implant.
  • the terminals of the sensing element include low resistance silicided poly-silicon 303 that connect to the implant 302.
  • the sensing element can be implemented with piezoelectric layer 402 in combination with top electrode 401 and bottom electrode 403 as shown in Fig. 8.
  • the electrical connections between the sensing element and digital circuitry e.g., CMOS circuitry 23 as shown in Fig. 4
  • the inter-connection layers 112 and vias 113 can optionally be made of metal, for example.
  • the second stage includes the lithographic, implant, anneal, deposition, and etching processes to form the digital circuitry (e.g., CMOS circuitry 23 as shown in Fig. 4). These processes are widely utilized in industry and described in the pertinent art. As such, these processes are not described in detail herein.
  • the second stage can include creation of an MOS device 110 including n- type source and drain implants 108.
  • the second stage can also include creation of a PMOS device 111 including p-type source and drain implants 109.
  • the p-type source and drain implants 109 are provided in an n-type well, which receives a voltage bias through a highly-doped n-type implant 105.
  • each of the NMOS device 110 and PMOS device 111 can include a metal-oxide gate stack 107.
  • the second stage can include creation of a plurality of NMOS and PMOS devices.
  • the NMOS and PMOS devices can form various components of the digital circuitry (e.g., CMOS circuitry 23 shown in Fig. 4).
  • the digital circuity can optionally include other components, which are not depicted in Figs. 5-8, including, but not limited to, bipolar transistors; metal-insulator-metal (“MIM”) and metal-oxide-semiconductor (“MOS”) capacitors; diffused, implanted, and polysilicon resistors; and/or diodes.
  • MIM metal-insulator-metal
  • MOS metal-oxide-semiconductor
  • the sensing element and digital circuitry can be disposed on the same monolithic substrate (e.g., the base 11 shown in Fig. 4).
  • This disclosure therefore contemplates that each of the processing steps (i.e., first stage processing steps) utilized in the creation of the sensing element (e.g., at least one sensing element 22 shown in Fig. 4) is compatible with the downstream processing steps (i.e., second stage processing steps) utilized in the creation of the digital circuitry (e.g., CMOS circuitry 23 shown in Fig. 4) in implementations where the sensing element(s) are created before the digital circuitry.
  • the n-type diffusion, deposition, or implant 102 e.g., as shown in Fig. 5
  • the p-type diffusion, deposition, or implant 202 e.g., as shown in Fig. 6
  • the anneal processes utilized in the creation of the digital circuitry e.g., CMOS circuitry 23 shown in Fig. 4
  • Similar design considerations can be made for each of the features described above and related to the sensing element.
  • Alternative processes can include formation of the terminals for the sensing element (e.g., implants 103 shown in Fig. 5 or implants 105, 203 shown in Fig. 6) that are performed at any point during or after formation of the digital circuitry (e.g., CMOS circuitry 23 shown in Fig. 4), which would impose different requirements on the anneal steps.
  • the third stage includes the MEMS micro-machining steps that are performed on the p- type silicon wafer 101.
  • the p-type silicon wafer 101 of Figs. 5-8 can correspond to the base 11 of the MEMS force sensor 10 shown in Figs. 1-4.
  • This disclosure contemplates that the third stage steps can be performed before or after performance of the first and second stages, depending on the capabilities of the manufacturing processes.
  • the base 11 can be etched to form the air gap 17, the outer wall 13, and the at least one flexure 16.
  • a shallow etch can form the air gap 17.
  • a deep etch can form the outer wall 13 and the at least one flexure 16. The deep etch is shown by reference number 106 in Figs. 5-8.
  • the sensing element is formed on a surface of the at least one flexure.
  • the base e.g., base 11 shown in Figs. 1-4
  • the cap e.g., cap 12 shown in Figs. 1-4
  • a sealed cavity e.g., sealed cavity 14 shown in Figs. 1-3
  • Electrical terminals e.g., electrical terminals 19 as shown in Figs. 3-4) can be added after all wafer processing is complete.
  • the MEMS switch device 50 can include a base 51 having a top surface 58a and a bottom surface 58b.
  • the MEMS switch device 50 can also include a cap 52 bonded to the base 51, which forms a sealed cavity 54 therebetween.
  • at least one sensing element 62 and digital circuitry 63 e.g., CMOS circuitry
  • Electrical terminals 59 are also arranged on the bottom surface 58b of the base 51.
  • the electrical terminals 59 can be used to electrically and/or communicatively connect the MEMS switch device to a host device.
  • the electrical terminals 59 can facilitate wafer-level packaging and flip-chip assembly.
  • a contact surface 55 on which force is applied is shown in Fig. 9.
  • force is applied, it is transferred from the cap 52 to the base 51, where strain is induced in the bottom surface 58b thereof.
  • An electrical characteristic of the sensing element 62 changes in response to the localized strain. This change is captured by an analog electrical signal produced by the sensing element 62.
  • the analog electrical signal is transferred to the digital circuitry 63 for further processing.
  • the MEMS switch device 50 is similar to the MEMS force sensor described above with regard to Figs. 1-8. Accordingly, various features of the MEMS switch device 50 are not described in further detail below.
  • the MEMS switch device 50 can optionally include a plurality of sensing elements 62 configured as a Wheatstone bridge.
  • the analog electrical signals produced by the sensing elements 62 in a Wheatstone bridge configuration can optionally be processed by
  • CMOS complementary metal-oxide-semiconductor
  • the CMOS circuitry can include a differential amplifier or buffer, an analog-to-digital converter, a clock generator, non-volatile memory, and/or one or more digital outputs.
  • the one or more digital outputs can be configured to change state when one or more force thresholds are reached. In this way, the MEMS switch device 50 can be used as a single-level or multi-level binary switch.
  • Fig. 11 is a truth table describing the outputs (Di, D 2 ) of a two-bit digital output (e.g., a digital output code).
  • the three force thresholds are fi, f 2 , and f 3 .
  • the digital outputs can be configured to indicate 2 N input force levels, where N is the number of output terminals.
  • the digital outputs/input force levels can be programmed by the user.
  • the CMOS circuitry can optionally include programmable memory to store trimming values that can be set during a factory calibration. The trimming values can be used to ensure that the MEMS switch device 50 provides accurate force level detection within a specified margin of error.
  • the programmable memory can optionally store a device ID for traceability.
  • the CMOS circuitry can include circuits other than those provided as examples. For example, this disclosure contemplates CMOS circuitry optionally including components to improve accuracy, such as an internal voltage regulator or a temperature sensor.
  • the MEMS switch device 50 can be configured to compare a dynamic force to the programmed force thresholds, filtering any low frequency response caused by various conditions including mechanical preload and temperature variation. This can be achieved by performing a low-frequency baseline operation that compares the current force input to an auto-calibration threshold.
  • Fig. 12 is a flow chart illustrating example operations for the baselining process. At 1202, the MEMS switch device enters an active state, for example, in response to an applied force. At 1204, the baseline is set.
  • the current force input is set as the new baseline until the next operation. In other words, operations return to 1204.
  • the baseline remains unchanged as shown at 1208.
  • the auto-calibration threshold and frequency of the operation can be programmable in a manner similar to the switching force thresholds, for example, to an auto-calibration threshold of 0.5 N and a baselining frequency of 10 Hz. It should be understood that the values for the auto- calibration threshold and baselining frequency are provided only as examples and can have other values.
EP18751209.0A 2017-02-09 2018-02-09 Integrierte digitale kraftsensoren und zugehörige verfahren zur herstellung Pending EP3580539A4 (de)

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