EP3444855B1 - Dispositif électroluminescent à semi-conducteur - Google Patents

Dispositif électroluminescent à semi-conducteur Download PDF

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Publication number
EP3444855B1
EP3444855B1 EP18188482.6A EP18188482A EP3444855B1 EP 3444855 B1 EP3444855 B1 EP 3444855B1 EP 18188482 A EP18188482 A EP 18188482A EP 3444855 B1 EP3444855 B1 EP 3444855B1
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Prior art keywords
electrode
light emitting
disposed
layer
insulation
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German (de)
English (en)
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EP3444855A1 (fr
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Youn Joon Sung
Jin Soo Park
Rak Jun Choi
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Suzhou Lekin Semiconductor Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • the present invention relates to a semiconductor light emitting device.
  • semiconductor devices including a compound such as GaN and AlGaN have many advantages of energy with a wide and easily adjustable band gap and the like, the semiconductor devices can be variously used as light emitting elements, light receiving elements, various diodes, and the like.
  • light emitting elements such as light emitting diodes or laser diodes using Group III-V or Group II-VI compound semiconductor materials have advantages in that, since a thin film growing technology and an element material have been developed, various colors such as a red color, a green color, a blue color, and an ultraviolet color can be expressed, high efficiency white light can be generated using a fluorescent material or by mixing colors, and low power consumption, a semi-permanent lifetime, a fast response time, safety, and environmental friendliness can be achieved in comparison with a conventional light source such as a fluorescent lamp and an incandescent lamp.
  • light receiving elements such as photodetectors or solar cells
  • element materials are developed to generate a photocurrent by absorbing light in various wavelength ranges
  • light in various wavelength ranges from a gamma ray range to a radio wavelength range can be used.
  • the light receiving elements have advantages of having a fast response time, safety, environmental friendliness, and easy adjustment in element materials, the light receiving elements can be also easily used for power control or ultrahigh frequency circuits or communication modules.
  • applications of the semiconductor device have extended to transmission modules of optical communication apparatuses, light emitting diode backlights which replace a cold cathode fluorescence lamps (CCFLs) included in backlights of liquid crystal display (LCD) devices, lighting apparatuses including a white light emitting diode which can replace fluorescent or incandescent bulbs, car headlights, traffic lights, sensors to detect gas or fire, and the like.
  • applications of the semiconductor device can be extended to circuits for a highfrequency application, other power control devices, and communication modules.
  • light emitting elements configured to emit light in an ultraviolet wavelength range can perform curing or sterilizing, and thus can be used for curing, medical treatment, and sterilization.
  • Examples of semiconductor devices according to the prior art are known from EP 3043395 and WO 2016/163083 .
  • the present invention is directed to a semiconductor flip chip type ultraviolet light emitting device.
  • the present invention is directed to a semiconductor light emitting device in which an operating voltage thereof is improved.
  • the present invention is directed to a semiconductor light emitting device in which optical output power thereof increases.
  • Objects of the present invention are not limited to the above-described objects, and may include purposes or effects which may be derived from solutions or embodiments of objects which will be described below.
  • a total area of the second electrode may be greater than that of the first electrode.
  • a ratio of a total area of the second electrode to a total area of the first electrode may be in a range of 1:0.5 to 1:0.7.
  • the first connection electrode may surround the second electrode.
  • a ratio (P11/P12) of a maximum perimeter (P11) of the second conductive semiconductor layer to a maximum area (P12) of the second conductive semiconductor layer may be in a range of 0.02 ⁇ m -1 to 0.05 ⁇ m -1 .
  • a ratio of the width of the first connection electrode in the first direction to the width of the second connection electrode in the first direction may be in a range of 1:1.1 to 1:1.5.
  • a ratio of the width of the first branch electrode in the second direction to the width of the second branch electrode in the second direction may be in a range of 1:2 to 1:4.
  • any one element in a case in which any one element is described as being formed on (or under) another element, such a description includes both a case in which the two elements are formed to be in direct contact with each other and a case in which the two elements are in indirect contact with each other such that one or more other elements are interposed between the two elements.
  • such a description may include a case in which one element is formed at an upper side or a lower side with respect to the other element.
  • FIG. 1 is a cross-sectional view illustrating a semiconductor light emitting device according to one embodiment of the present invention
  • FIG. 2 is an enlarged view illustrating a part of FIG. 1
  • FIG. 3 is a plan view illustrating the semiconductor device according to one embodiment of the present invention
  • FIG. 4 is a view illustrating an arrangement of a first electrode and a second electrode according to one embodiment.
  • the semiconductor light emitting device may include a semiconductor structure (a light emitting structure) 120, a first insulation layer 171 disposed on the semiconductor structure 120, a first electrode 151 disposed on a first conductive semiconductor layer 121, a second electrode 161 disposed on a second conductive semiconductor layer 123, a first cover electrode 152 disposed on the first electrode 151, a second cover electrode 162 disposed on the second electrode 161, and a second insulation layer 172 disposed on the first cover electrode 152 and the second cover electrode 162.
  • the semiconductor structure 120 may output light in an ultraviolet wavelength band.
  • the semiconductor structure 120 may output light in a near ultraviolet wavelength band (UV-A), light in a far ultraviolet wavelength band (UV-B), or light in a deep ultraviolet wavelength band (UV-C).
  • UV-A near ultraviolet wavelength band
  • UV-B far ultraviolet wavelength band
  • UV-C deep ultraviolet wavelength band
  • the wavelength range may be determined by a composition ratio of Al in the semiconductor structure 120.
  • the UV-A may have a peak wavelength in the range of 320 nm to 390 nm
  • the UV-B may have a peak wavelength in the range of 280 nm to 320 nm
  • the UV-C may have a peak wavelength of in the range of 100 nm to 280 nm.
  • the semiconductor layers of the semiconductor structure 120 may include an In x1 Al y1 Ga 1-x1-y1 N material (0 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1, 0 ⁇ x1+y1 ⁇ 1) including aluminum.
  • a composition of Al may be expressed as a ratio of an atomic weight of Al to a total atomic weight of an atomic weight of In, an atomic weight of Ga, and the atomic weight of Al.
  • a composition of Ga may be 60% in Al 40 Ga 60 N.
  • the meaning of "a composition is low or high,” may be understood as including “a difference in a composition % (and/or a % point)" of a semiconductor layer.
  • the composition of Al in the second semiconductor layer may be expressed as being higher than that of the first semiconductor layer by 30%.
  • the substrate 110 may be formed of a material selected from sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto.
  • the substrate 110 may be a transparent substrate through which light in an ultraviolet wavelength band may be transmitted.
  • a buffer layer 111 may reduce lattice mismatch between the substrate 110 and the semiconductor layer.
  • the buffer layer 111 may be formed of a material in which Group III and V elements are combined, or may include any one of GaN, InN, A1N, InGaN, AlGaN, InAlGaN, and AlInN.
  • the buffer layer 111 may be A1N, but is not limited thereto.
  • the buffer layer 111 may include a dopant, but is not limited thereto.
  • the first conductive semiconductor layer 121 may be formed of a Group III-V or II-VI compound semiconductor and the like, and may be doped with a first dopant.
  • the first conductive semiconductor layer 121 may be selected from semiconductor materials having a composition equation of In x1 Al y1 Ga 1-x1-y1 N (0 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1, 0 ⁇ x1+y1 ⁇ 1), for example, AlGaN, A1N, InAlGaN, and the like.
  • the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, and Te.
  • the first conductive semiconductor layer 121 doped with the first dopant may be an n-type semiconductor layer.
  • An active layer 122 may be disposed between the first conductive semiconductor layer 121 and the second conductive semiconductor layer 123.
  • the active layer 122 is a layer in which electrons (or holes) injected through the first conductive semiconductor layer 121 meet holes (or electrons) injected through the second conductive semiconductor layer 123.
  • the active layer 122 may transition to a low energy level as the electrons and holes are recombined, and may generate light having an ultraviolet wavelength.
  • the active layer 122 may have any one structure among a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, but is not limited thereto.
  • a single well structure a multi well structure
  • a single quantum well structure a single quantum well structure
  • a multi quantum well (MQW) structure a quantum dot structure
  • a quantum wire structure but is not limited thereto.
  • the active layer 122 may include a plurality of well layers (not shown) and barrier layers (not shown).
  • the well layers and the barrier layers may have a composition equation of In x2 Al y2 Ga 1-x2-y2 N (0 ⁇ x2 ⁇ 1, 0 ⁇ y2 ⁇ 1, 0 ⁇ x2+y2 ⁇ 1).
  • a composition of Al of the well layers may vary according to a wavelength of light to be emitted.
  • the second conductive semiconductor layer 123 may be formed on the active layer 122, and may be formed of a Group III-V or II-VI compound semiconductor or the like, and the second conductive semiconductor layer 123 may be doped with a second dopant.
  • the second conductive semiconductor layer 123 may be formed of a semiconductor material having a composition equation of an In x5 Al y2 Ga 1-x5-y2 N (0 ⁇ x5 ⁇ 1, 0 ⁇ y2 ⁇ 1, 0 ⁇ x5+y2 ⁇ 1) or a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.
  • the second conductive semiconductor layer 123 doped with the second dopant may be a p-type semiconductor layer.
  • the semiconductor structure 120 comprises a first region M1 in which the active layer 122 and the second conductive semiconductor layer 123 are disposed on the first conductive semiconductor layer 121, and a second region M2 in which the first conductive semiconductor layer 121 is exposed.
  • the first region M1 may be a light emitting portion and the second region M2 may be a non-light emitting portion
  • the first insulation layer 171 may be interposed between the first electrode 151 and the second electrode 161.
  • the first insulation layer 171 may include a first hole 171a in which the first electrode 151 is disposed and a second hole 171b in which the second electrode 161 is disposed.
  • the first electrode 151 may be disposed on a first surface 121a of the first conductive semiconductor layer 121, and the second electrode 161 may be disposed on a first surface 123a of the second conductive semiconductor layer 123.
  • the active layer 123 is provided between the first surface 121a of the first conductive semiconductor layer 121 and a second surface 123b of the second conductive semiconductor layer 123 that is opposite to the first surface 123a of the second conductive semiconductor layer 123.
  • the first electrode 151 and the second electrode 161 may be formed of at least one among indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO nitride (IZON), Al-Ga ZnO (AGZO), In-Ga ZnO (IGZO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf, but are not limited thereto.
  • the first electrode 151 may include a plurality of metal layers (for
  • the first electrode 151 may include a first surface 151-1 facing the first surface 121a of first conductive semiconductor layer 121 and a second surface 151-2 that is opposite to the first surface 121a of first conductive semiconductor layer 121.
  • the first electrode 151 may include a first groove 151a disposed on the second surface 151-2 thereof.
  • the first electrode 151 and/or the second electrode 161 may be heat-treated at a temperature of about 600 to 900°C, and in this process, an oxide layer (OX1) may be formed on the second surface 151-2 of the first electrode 151.
  • an oxide layer may sever as a resistive layer, an operating voltage may increase.
  • the oxide layer OX1 of the first electrode 151 may be removed by forming the first groove 151a in the one surface thereof.
  • a protrusion 151b which surrounds the first groove 151a may be formed.
  • the protrusions 151b extend from the second surface 151-2 of the first electrode 151 in a direction away from the first surface 121a of first conductive semiconductor layer 121.
  • the second surface 151-2 on which the first groove 151a is disposed is lower than the second surface 151-2 on which the protrusions 151b are disposed.
  • the protrusions 151b may be arranged to surround the first grooves 151a but are not limited thereto.
  • the protrusions 151b may include a ring shape surrounding the first grooves 151a.
  • the first insulation layer 171 around the first electrode 151 may be etched and a short-circuit therebetween may occur. Accordingly, in the embodiment, etching of the first insulation layer 171 may be prevented by etching only a part of the first electrode 151. Accordingly, an edge region of the first electrode 151 according to the embodiment remains to form the protrusion 151b.
  • the protrusion 151b of the first electrode 151 may also be relatively slightly etched by adjusting a thickness of a mask. In this case, a part of the oxide layer remaining on the protrusion 151b and a side surface of the first electrode 151 may also be removed.
  • the first cover electrode 152 may be formed on the first electrode 151.
  • the first electrode may include a first uneven portion 152c disposed inside the first groove.
  • the first cover electrode 152 may cover the side surface of the first electrode 151. In this case, since a contact area of the first cover electrode 152 and the first electrode 151 increases, the operating voltage may further decrease.
  • the first insulation layer 171 is provided on the first surface 121a of the first semiconductor layer 121, the first surface 123a of the second semiconductor layer 123, and a side surface 122a of the active layer 122.
  • the first cover electrode 152 may include a second uneven portion 152b disposed on a space region d2 between the first insulation layer 171 and the lateral edge of the first electrode 151.
  • the second uneven portion 152b may be in direct contact with the first conductive semiconductor layer 121. Accordingly, current injection efficiency may increase.
  • a width of the space region d2 may be in a range of about 1 ⁇ m to 10 ⁇ m, but is not limited thereto.
  • the first cover electrode 152 extends into the first groove 151a of the first electrode 151 and extends into the space region d2 between the first insulation layer 171 and the lateral edge of the first electrode 151.
  • the first cover electrode 152 may extend to a portion above the first insulation layer 171.
  • the first cover electrode 152 overlaps with the first insulation layer 171 in a thickness direction of the first conductive semiconductor. Accordingly, since the total area of the first cover electrode 152 increases, the operating voltage may decrease.
  • the second cover electrode 162 may be disposed on the second electrode 161.
  • the second cover electrode 162 may cover to a side surface of the second electrode 161, but is not limited thereto.
  • the second cover electrode 162 may also be disposed only on the second electrode 161.
  • the first cover electrode 152 and the second cover electrode 162 may be formed of at least one among Ni/Al/Au, Ni/IrOx/Au, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf, but are not specifically limited thereto.
  • outermost layers of the first cover electrode 152 and the second cover electrode 162 which are exposed to the outside may include gold (Au). Gold (Au) may prevent corrosion of the electrodes, improve an electrical conductivity, and thus allow the first cover electrode 152 and the second cover electrode 162 to be easily electrically connected to pads.
  • the second insulation layer 172 may disposed on the first cover electrode 152, the second cover electrode 162, and the first insulation layer 171.
  • the second insulation layer 172 may include a first opening through which the first cover electrode 152 is exposed and a second opening through which the second cover electrode 162 is exposed.
  • the first opening includes a first via hole 152a and the second opening includes second via holes 162a.
  • the first insulation layer 171 and the second insulation layer 172 may be formed of at least one selected from the group consisting of SiO 2 , a Si x O y , Si 3 N 4 , a Si x N y , a SiO x N y , Al 2 O 3 , TiO 2 , A1N, and the like.
  • a part of a boundary between the first insulation layer 171 and the second insulation layer 172 may be removed.
  • a first pad 153 may be disposed on the first cover electrode 152, and a second pad 163 may be disposed on the second cover electrode 162.
  • the first pad 153 and the second pad 163 may be eutectic-bonded, but are not limited thereto.
  • the second insulation layer 172 is disposed on the first insulation layer 171 in the region between the first electrode 151 and the second electrode 161, Thus, moisture and contaminants can be prevented from penetrating the semiconductor structure 120.
  • the first insulation layer 171 and the second insulation layer 172 may form one insulation layer 170 during the high-temperature growth process.
  • the insulation layer 170 may include a recess 170-5 in a region between the first electrode 151 and the second electrode 152.
  • the insulation layer 170 may include a first insulation portion 170-1 disposed between the first conductive semiconductor layer 121 and the first cover electrode 152, and a second insulation portion 170-2 disposed on an upper surface of the first cover electrode 152.
  • the first cover electrode 152 may include a first protrusion portion 152d disposed between an upper surface of the first insulation portion 170-1 and a lower surface of the second insulation portion 170-2.
  • the first insulation portion 170-1 may extend to the inside of the first cover electrode 152. Thus, moisture and contaminants can be prevented from penetrating the semiconductor structure 120.
  • the first conductive semiconductor layer 121 may be exposed between the first insulation portion 170-1 and the first cover electrode 152 and may be oxidized.
  • the second insulation portion 170-2 may be disposed on a side surface and an upper surface of the first cover electrode 152 and may be extended between the first cover electrode 152 and the first pad 153. Thus, moisture and contaminants can be prevented from penetrating the semiconductor structure 120..
  • the first insulation layer 171, the first cover electrode 152, and the second insulation layer 172 can be configured to prevent the penetration of moisture and contaminants.
  • a first width d11 in which the first insulation portion 170-1 overlaps with the first cover electrode 152 in a vertical direction may be greater than a width of the first spacing region d2. Therefore, the effect of preventing moisture permeation can be increased.
  • a width d12 in which the second insulation portion 170-2 overlaps with the first cover electrode 152 in the vertical direction may be greater than the first width d11 in which the first insulation portion 170-1 overlaps with the first cover electrode 152.
  • the second insulation portion 170-2 may overlap with the first electrode 151 in the vertical direction. Therefore, this can effectively prevent moisture permeation.
  • the first insulation layer 171 includes a third insulation portion 170-3 disposed between the second conductive semiconductor layer 123 and the second cover electrode 162, and the second insulation layer 172 includes a fourth insulation portion 170-4 disposed on the upper surface of the second cover electrode 162.
  • the third insulation portion 170-3 may extend to the inside of the second cover electrode 162. Therefore, it is possible to prevent moisture and contaminants from penetrating the second conductivity semiconductor layer 123.
  • the third insulation portion 170-3 and the second cover electrode 162 are separated from each other, the second conductive semiconductor layer 123 is exposed between the third insulation portion 170-3 and the second cover electrode 162 so that the second conductive semiconductor layer 123 may be oxidized.
  • the fourth insulation portion 170-4 may be disposed on a side surface and an upper surface of the second cover electrode 162 and may extend between the second cover electrode 162 and the second pad 163. Thus, moisture and contaminants can be prevented from penetrating the semiconductor structure 120.
  • a width d22 in which the fourth insulation portion 170-4 overlaps with the second cover electrode 162 in the vertical direction may be greater than a width d21 in which the third insulation portion 170-3 overlaps with the first cover electrode 162.
  • the second cover electrode 162 may extend into the second spaced region between the third insulation portion 170-3 and the side surfaces of the second electrode 161 and may contact with the second conductive type semiconductor layer 123. Therefore, the current injection efficiency can be improved.
  • a width of the second spacing region may be about 1 ⁇ m to about 10 ⁇ m, but is not limited thereto.
  • the semiconductor structure 120 may include a light emitting portion M1 etched to protrude therefrom.
  • the light emitting portion M1 may include the active layer 122 and the second conductive semiconductor layer 123.
  • a ratio P11/P12 of a maximum perimeter P11 to a maximum area P12 of the light emitting portion M1 may be in a range of 0.02 ⁇ m -1 to 0.05 ⁇ m -1 .
  • the maximum perimeter and the maximum area of the light emitting portion M1 may be the same as those of the second conductive semiconductor layer (or active layer).
  • optical output power may increase.
  • the optical output power may increase.
  • a problem in that the optical output power decreases because the perimeter of the light emitting portion excessively increases in comparison to the area thereof in a case in which the ratio P11/P12 is 0.05 or less may be prevented.
  • very narrow light emitting portions may be disposed consecutively.
  • electrodes disposed on the light emitting portions may also be very narrow, resistance thereof may increase. Accordingly, the operating voltage may increase.
  • the light emitting portion M1 may include a plurality of first light emitting portions M11 in which a plurality of light emitting portions are spaced apart from each other in a second direction, and a second light emitting portion M12 extending in the second direction and connected to ends of the plurality of first light emitting portions to achieve a proper ratio of the perimeter to the area the light emitting portion M1.
  • the second cover electrode 162 may have a shape corresponding to the light emitting portion M1.
  • the first electrode may be disposed in a shape which surrounds the second electrode.
  • the first pad 153 and the second pad 163 may be disposed on a flat surface to be spaced apart from each other in a first direction.
  • the first direction (the first plan direction) may be an X direction
  • the second direction (the second plan direction) may be a Y direction.
  • the first direction and the second direction may be perpendicular to each other, but are not limited thereto.
  • the first pad 153 may be electrically connected to the first cover electrode 152 through the first via hole 152a of the second insulation layer, and the second pad 163 may be electrically connected to the second cover electrode 162 through the second via holes 162a of the second insulation layer.
  • the first via hole 152a may be one hole formed along a shape of the first cover electrode 152, and the second via holes 162a may include a plurality of via holes. However, the number and shape of the holes are not limited thereto.
  • the second cover electrode 162 may include a second connection electrode 162-2 which extends between the second conductive semiconductor layer 123 and the second pad 163 in the second direction (Y direction), and a plurality of second branch electrodes 162-1 which extend from the second connection electrode 162-2 toward the first pad 153 in the first direction (X direction).
  • the first cover electrode 152 may include a first connection electrode 152-2 which extends between the first conductive semiconductor layer 121 and the first pad 153 in the second direction, and a plurality of first branch electrodes 152-1 which extend from the first connection electrode 152-2 toward the second pad 163.
  • the first via hole 152a includes a shape corresponding to the first connection electrode 152-2 and the first branch electrodes 152-1.
  • the first connection electrode 152-2 may be disposed to extend along an edge of the semiconductor structure 120 to surround the second cover electrode 162. Accordingly, when a current is applied thereto, the current may be uniformly distributed to the first conductive semiconductor layer 121.
  • a width W3 of the first connection electrode 152-2 in the first direction may be smaller than a width W4 of the second connection electrode 162-2 in the first direction.
  • a ratio W3:W4 of the width of the first connection electrode 152-2 in the first direction to the width of the second connection electrode 162-2 in the first direction may be in a range of 1:1.1 to 1:1.5. In a case in which the width ratio W3:W4 is 1:1.1 or more, since an area of the second cover electrode 162 increases, hole injection efficiency may increase, and in a case in which the width ratio is 1:1.5 or less, since an area of the first connection electrode 152-2 is secured, electron injection efficiency may increase.
  • the first branch electrode 152-1 may be interposed between adjacent second branch electrodes 162-1.
  • a width W2 of the first branch electrode 152-1 in the second direction may be smaller than a width W1 of the second branch electrode 162-1 in the second direction.
  • a ratio W2:W1 of the width W2 of the first branch electrode 152-1 in the second direction to the width W1 of the second branch electrode 162-1 in the second direction may be in a range of 1:2 to 1:4.
  • the width ratio W2:W1 is 1:2 or more, since the area of the second cover electrode 162 increases, the hole injection efficiency may increase.
  • the width ratio is 1:4 or less, since the area of the first cover electrode 152 may be secured, the electron injection efficiency may increase.
  • the area of the second cover electrode 162 may be greater than that of the first cover electrode 152.
  • a ratio R2:R1 of a total area R1 of the second cover electrode 162 to a total area R2 of the first cover electrode 152 may be in a range of 1:0.5 to 1:0.7.
  • the area ratio is 1:0.5 or more
  • the electron injection efficiency may increase, and the first cover electrode 152 may be disposed to surround the second cover electrode 162. Accordingly, current distribution efficiency may also increase.
  • the hole injection efficiency and optical output power may increase.
  • Ends of the first branch electrodes 152-1 may be interposed between the second pad 163 and the first conductive semiconductor layer 121, and ends of the second branch electrode 162-1 may be interposed between the first pad 153 and the second conductive semiconductor layer 123. That is, the first branch electrode 152-1 may overlap the second pad 163 in a thickness direction of the first conductive semiconductor layer 121, and the second branch electrode 162-1 may overlap the first pad 153 in the thickness direction of the first conductive semiconductor layer 121.
  • the first pad 153 may include a first side surface 153b and a second side surface 153a which are parallel in the second direction
  • the second pad 163 may include a third side surface 163a parallel to the second direction and adjacent to the second side surface 153a and a fourth side surface 163b parallel to the third side surface 163a.
  • a distance L1 from the end of the first branch electrode 152-1 to the fourth side surface 163b of the second pad 163 in the first direction may be greater than a distance L2 from the end of the second branch electrode 162-1 to the first side surface 153b of the first pad 153 in the first direction.
  • An overlap area of the second branch electrode 162-1 and the first pad 153 may be greater than that of the first branch electrode 152-1 and the second pad 163.
  • FIGS. 5 to 12 are plan and cross-sectional views showing a manufacturing method of a semiconductor light emitting device according to one embodiment of the present invention.
  • a buffer layer 111 and a semiconductor structure 120 including a first conductive semiconductor layer 121, an active layer 122, and a second conductive semiconductor layer 123 may be disposed on a substrate 110.
  • the semiconductor structure 120 may include a non-light emitting portion M2 etched such that the first conductive semiconductor layer 121 is exposed, and the light emitting portion M1 which protrudes in comparison to the non-light emitting portion M2.
  • the light emitting portion M1 may include the active layer 122 and the second conductive semiconductor layer 123.
  • the ratio P11/P12 of the maximum perimeter P11 of the light emitting portion M1 to the maximum area P12 of the light emitting portion may be in a range of 0.02 ⁇ m -1 to 0.05 ⁇ m -1 .
  • the optical output power may increase.
  • the light emitting portion M1 may include the plurality of first light emitting portions M11 in which the plurality of light emitting portions are spaced apart from each other in the second direction (Y direction), and the second light emitting portion M12 which extends in the second direction (Y direction) and connects the ends of the plurality of first light emitting portions to achieve a proper ratio of the perimeter and the area.
  • a first insulation layer 171 may be formed on the semiconductor structure 120, and a first hole 171a and a second hole 171b may be formed.
  • the first insulation layer 171 may be formed of at least one selected from the group consisting of SiO 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , TiO 2 , AlN, and the like.
  • a first electrode 151 may be formed on the exposed first conductive semiconductor layer 121.
  • a thickness of the first electrode 151 may be greater than that of the first insulation layer 171.
  • a second electrode 161 may be formed on the second conductive semiconductor layer 123.
  • a method of forming the first electrode 151 and the second electrode 161 may use a method of forming a general ohmic electrode without change.
  • the first electrode 151 may be formed of at least one among ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IZON, AGZO, IGZO, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf, but is not limited thereto.
  • the first electrode 151 may include a plurality of layers (for example, Cr/Al/Ni), and the second electrode 161 may include ITO, but the first electrode 151 and the second electrode 161 are not limited thereto.
  • an etching operation may be performed on the first electrode 151.
  • a thermal process may be performed at a temperature of 800°C for ohmic characteristics of the first electrode 151 and/or the second electrode 161.
  • a temperature of the thermal process may be increased.
  • an oxide layer may be formed on an upper surface of the first electrode 151. Accordingly, the oxide layer of the upper surface of the first electrode 151 may be etched to improve electrical connection between the first electrode 151 and a cover electrode. In this process, a first groove 151a and a protrusion 151b may be formed.
  • a first cover electrode 152 may be disposed on the first electrode 151.
  • a second cover electrode 162 may be disposed on the second electrode 161.
  • the first cover electrode 152 may cover to side surfaces of the second electrode 161.
  • the first cover electrode 152 and the second cover electrode 162 may be formed of at least one among Ni/Al/Au, Ni/IrOx/Au, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf, but are not limited thereto.
  • outermost layers of the first cover electrode 152 and the second cover electrode 162 which are exposed to the outside may include Au.
  • a second insulation layer 172 may be disposed on the first cover electrode 152, the second cover electrode 162, and the first insulation layer 171.
  • the second insulation layer 172 may include a first via hole 152a through which the first cover electrode 152 is exposed and a second via holes 162a through which the second cover electrode 162 is exposed.
  • a first pad 153 may be electrically connected to the first cover electrode 152 through the first via hole 152a.
  • a second pad 163 may be electrically connected to the second cover electrode 162 through the second via holes 162a.
  • the semiconductor light emitting device may be applied to various light sources.
  • the light source may include a sterilizer, a curing device, a lighting device, a display device, and a vehicle lamp. That is, the semiconductor light emitting device may be disposed in a case and may be applied to various electronic devices configured to emit light.
  • a sterilizer may include the semiconductor light emitting device according to the embodiment to sterilize a desired area.
  • the sterilizer may be applied to a home appliance such as a water purifier, an air conditioner, and a refrigerator, but is not necessarily limited thereto. That is, the sterilizer may be applied to various products requiring sterilization (for example, a medical device).
  • a water purifier may include the sterilizer according to the embodiment to sterilize circulating water.
  • the sterilizer may be disposed at a nozzle or outlet through which water circulates and emit ultraviolet light.
  • the sterilizer may include a waterproof structure.
  • a curing device may include the semiconductor light emitting device according to the embodiment and cure various kinds of liquid.
  • the liquid includes the broadest concept which encompasses various materials cured when ultraviolet light is emitted thereto.
  • the curing device may cure various kinds of resin.
  • the curing devices may also be applied to cure a beauty product such as a manicure.
  • a light device may include a light source module including a substrate and the semiconductor light emitting device of the embodiment, a heat sink configured to dissipate heat of the light module, and a power source configured to process or convert an electric signal received from the outside and supply the electric signal to the power source module.
  • the lighting device may include a lamp, a head lamp, a streetlight, and the like.
  • a display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter.
  • the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may be included in a backlight unit.
  • the reflector may be disposed on the bottom cover, and the light emitting module may emit light.
  • the light guide plate may be disposed in front of the reflector to guide the light forward, and the optical sheet may be formed with a prism sheet and may be disposed in front of the light guide plate.
  • the display panel may be disposed in front of the optical sheet, the image signal output circuit may supply an image signal to the display panel, and the color filter may be disposed in front of the display panel.
  • the semiconductor light emitting device When the semiconductor light emitting device is used as the backlight unit of the display device, the semiconductor light emitting device may be used as an edge type backlight unit or a direct type backlight unit.
  • the semiconductor light emitting device may also be a laser diode other than the above-described light emitting diode.
  • a laser diode may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which have the above-described structure, like the light emitting element.
  • the laser diode utilizes an electro-luminescence phenomenon in which light is emitted when a p-type first conductive semiconductor and an n-type second conductive semiconductor are bonded and a current is supplied thereto, but there are differences in directivity and a phase of the emitted light between the light emitting element and the laser diode.
  • the laser diode in the laser diode, light having one specific wavelength (monochromatic beam) may be emitted with the same phase and in the same direction using a phenomenon called stimulated emission and a constructive interference phenomenon, and because of such characteristics, the laser diode may be used for an optical communication apparatus, a medical apparatus, a semiconductor processing apparatus, and the like.
  • a semiconductor ultraviolet light emitting device having a flip chip type can be manufactured.
  • an operating voltage of a semiconductor ultraviolet light emitting device can be lowered.

Claims (11)

  1. Un dispositif électroluminescent à semi-conducteur comprenant :
    une structure électroluminescente (120) comprenant une première couche semi-conductrice conductrice (121), une deuxième couche semi-conductrice conductrice (123) et une couche active (122) ;
    une première électrode (151) connectée électriquement à la première couche semi-conductrice conductrice (121) ;
    une deuxième électrode (161) connectée électriquement à la deuxième couche semi-conductrice conductrice (123) ;
    une première électrode de recouvrement (152) disposée sur la première électrode (151) ; et
    une couche isolante (170) disposée entre la première électrode (151) et la deuxième électrode (161), la couche isolante (170) comprenant une première couche isolante (171) disposée entre la première électrode (151) et la deuxième électrode (152), et une deuxième couche isolante (172) disposée sur la première couche isolante (171),
    la première couche isolante (171) comprenant une première partie isolante (170-1) disposée entre la première couche semi-conductrice conductrice (121) et la première électrode de recouvrement (152), et la deuxième couche d'isolation (172) comprenant une deuxième partie d'isolation (170-2) disposée sur la première électrode de recouvrement (152),
    la première électrode de recouvrement (152) comprenant une première partie de saillie (152d) disposée entre une surface supérieure de la première partie d'isolation (170-1) et une surface inférieure de la deuxième partie d'isolation (170-2), la première électrode (151) comprenant une première rainure (151a) disposée sur une surface supérieure d'elle-même,
    la première électrode de recouvrement (151) comprenant une première partie irrégulière (152c) s'étendant depuis la surface supérieure de la première électrode dans la première rainure (151a),
    la première partie isolante (170-1) étant espacée de la première électrode (151) définissant une première zone d'espace entre la première une partie isolante (170-1) et la première électrode (151), et la première électrode de recouvrement (152) comprenant une deuxième partie irrégulière (152b) s'étendant depuis la surface supérieure de la première électrode (151) dans la première zone d'espace et étant en contact avec la première couche semi-conductrice conductrice (121).
  2. Le dispositif électroluminescent à semi-conducteur selon la revendication 1, dans lequel une largeur selon laquelle la première partie d'isolation (170-1) chevauche la première électrode de recouvrement (152) dans une direction verticale est supérieure à une largeur de la première zone d'espace.
  3. Le dispositif électroluminescent à semi-conducteur selon la revendication 1, dans lequel une largeur selon laquelle la deuxième partie d'isolation (170-2) chevauche la première électrode de recouvrement (152) dans une direction verticale est supérieure à une largeur selon laquelle la première partie d'isolation (170-1) chevauche la première électrode de recouvrement (152) dans une direction verticale,
    la deuxième partie d'isolation (170-2) chevauchant la première électrode (151) dans la direction verticale.
  4. Le dispositif électroluminescent à semi-conducteur selon la revendication 1, comprenant en outre une deuxième électrode de recouvrement (162) disposée sur la deuxième électrode (152),
    la première couche isolante (171) comprenant une troisième partie d'isolation (170-3) disposée entre la deuxième couche semi-conductrice conductrice (123) et la deuxième électrode de recouvrement (162), et
    la deuxième couche isolante (172) comprend une quatrième partie d'isolation (170-4) disposée sur la deuxième électrode de recouvrement (162).
  5. Le dispositif électroluminescent à semi-conducteur selon la revendication 4, comprenant en outre une deuxième zone d'espace disposée entre la troisième partie d'isolation (170-3) et la deuxième électrode (161),
    la deuxième électrode de recouvrement (162) s'étendant vers la deuxième zone d'espace et étant en contact avec la deuxième couche semi-conductrice conductrice (132).
  6. Le dispositif électroluminescent à semi-conducteur selon la revendication 4, dans lequel la structure électroluminescente (120) comprend une première zone (M1) dans laquelle la couche active (122) et la deuxième couche semi-conductrice conductrice (123) sont disposées sur la première couche semi-conductrice conductrice (121) et une deuxième zone (M2) dans laquelle la première couche conductrice semi-conductrice (121) est exposée,
    la couche isolante (170) étant disposée sur une surface supérieure de la première couche semi-conductrice conductrice (121), une surface latérale de la couche active (122), une surface latérale de la deuxième couche conductrice semi-conductrice (123) et d'une surface supérieure de la deuxième couche conductrice semi-conductrice (123),
    la couche isolante (170) comprenant un évidement (170-5) disposé sur la première électrode (151) et la deuxième électrode (161).
  7. Le dispositif électroluminescent à semi-conducteur selon la revendication 4, comprenant en outre :
    un substrat (110) sur lequel la structure électroluminescente (120) est disposée,
    un premier coussinet (153) disposé sur la première électrode de recouvrement (152), et
    un deuxième coussinet (163) disposé sur la deuxième électrode de recouvrement (162),
    le premier coussinet (153) s'étendant jusqu'à une surface supérieure de la deuxième partie isolante (170-2), et le deuxième coussinet (163) s'étendant jusqu'à une surface supérieure de la quatrième partie isolante (170-4).
  8. Le dispositif électroluminescent à semi-conducteur selon la revendication 6, dans lequel la première zone (M1) comprend une pluralité de premières parties électroluminescentes (M11) ayant une première partie d'extrémité et une deuxième partie d'extrémité, et une deuxième partie d'émission de lumière (M12) se connectant aux premières parties d'extrémité de la pluralité de premières parties émettrices de lumière (M11),
    un rapport (P11 / P12) d'un périmètre maximum (P11) de la première zone (M1) à une zone maximum (P12) de la première zone (M1) se situant dans une gamme allant de 0,02 µm-1 à 0,05 µm-1.
  9. Le dispositif électroluminescent à semi-conducteur selon la revendication 8, dans lequel la deuxième électrode de recouvrement (162) comprend une pluralité de deuxièmes électrodes de branche (162-1) disposées sur la première zone (M1), et une deuxième électrode de connexion (162-2) connectant la pluralité de deuxièmes électrodes de branche (162-1).
  10. Le dispositif électroluminescent à semi-conducteur selon la revendication 9, dans lequel la première électrode de recouvrement (152) comprend une pluralité de premières électrodes de branche (152-1) disposées entre la pluralité de deuxièmes électrodes de branche (162-1), et une première électrode de connexion (152-2) connectant la pluralité de premières électrodes de branche (152-1).
  11. Le dispositif électroluminescent à semi-conducteur selon la revendication 9, dans lequel la couche isolante (170) comprend un premier trou traversant (152a) dans lequel la première électrode de recouvrement (152) est exposée, et une pluralité de deuxièmes trous traversants (162a) dans lesquels la deuxième électrode de recouvrement (162) est exposée,
    le premier trou traversant (152a) comprenant une forme correspondant à une forme d'une première électrode de recouvrement (152).
EP18188482.6A 2017-08-14 2018-08-10 Dispositif électroluminescent à semi-conducteur Active EP3444855B1 (fr)

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US10593838B2 (en) 2020-03-17
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