JP2019212903A - 発光ダイオード及びそれを有する発光素子 - Google Patents
発光ダイオード及びそれを有する発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 213
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000000465 moulding Methods 0.000 claims description 18
- 230000005012 migration Effects 0.000 claims description 14
- 238000013508 migration Methods 0.000 claims description 14
- 230000002265 prevention Effects 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 238000009413 insulation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 382
- 239000000758 substrate Substances 0.000 description 28
- 230000004888 barrier function Effects 0.000 description 22
- 230000000903 blocking effect Effects 0.000 description 22
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 11
- 239000010931 gold Substances 0.000 description 9
- 229910021645 metal ion Inorganic materials 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Abstract
Description
Claims (25)
- n型半導体層;
前記n型半導体層の上面を部分的に露出させるように前記n型半導体層上に位置し、活性層と、前記活性層上に位置するp型半導体層と、を含むメサ;
前記n型半導体層に電気的に接続する第1ボンディングパッド;
前記p型半導体層に電気的に接続する第2ボンディングパッド;及び
前記メサによって露出したn型半導体層の露出領域と前記第2ボンディングパッドとの間に少なくとも一部が配置された第1絶縁層;を含み、
前記第1絶縁層は、前記メサによって露出したn型半導体層の露出領域のうち前記第2ボンディングパッドに最も近い露出領域と前記第2ボンディングパッドとの間の前記p型半導体層領域の一部を覆い、
前記第1絶縁層は、前記露出したn型半導体層に隣接した前記p型半導体層の縁部に沿って配置された発光ダイオード。 - 前記第1絶縁層は、前記第2ボンディングパッドより前記露出したn型半導体層の近くに配置された、請求項1に記載の発光ダイオード。
- 前記第1絶縁層は、前記露出したn型半導体層を部分的に覆う、請求項2に記載の発光ダイオード。
- 前記第1絶縁層は、前記第2ボンディングパッドの幅より長い長さを有する、請求項1に記載の発光ダイオード。
- 前記第1絶縁層は、前記第2ボンディングパッドの3面を取り囲む形状を有する、請求項4に記載の発光ダイオード。
- 前記メサは、長い形状を有し、
前記第2ボンディングパッドは、前記メサ上に前記第1ボンディングパッドに対向して前記メサの長さ方向の一側端の縁部付近に配置され、
前記第1絶縁層は、前記第2ボンディングパッドと前記一側端の縁部との間の前記p型半導体層領域の一部を覆う、請求項1に記載の発光ダイオード。 - 前記第1絶縁層は、前記一側端の縁部付近のメサの側面及び露出したn型半導体層を覆う、請求項6に記載の発光ダイオード。
- 前記第1絶縁層は、前記一側端の縁部付近で前記メサの縁部に沿って長さ方向に延長する、請求項6に記載の発光ダイオード。
- 前記メサの長さ方向に沿って配置された第1絶縁層部分の長さは、前記第2ボンディングパッドの幅より大きく、前記メサの最大長さの1/2より小さい、請求項8に記載の発光ダイオード。
- 前記メサは、前記p型半導体層及び前記活性層を介して前記n型半導体層を露出させるグルーブを含み、
前記第1絶縁層は、前記グルーブと前記第2ボンディングパッドとの間に位置する前記p型半導体層領域の一部を覆う、請求項1に記載の発光ダイオード。 - 前記第1絶縁層から離隔した追加の絶縁層をさらに含み、
前記メサは、前記p型半導体層及び前記活性層を介して前記n型半導体層を露出させるグルーブを含み、
前記追加の絶縁層は、前記グルーブと前記第2ボンディングパッドとの間に位置する前記p型半導体層領域の一部を覆う、請求項1に記載の発光ダイオード。 - 前記追加の絶縁層は、前記グルーブの側壁の一部を覆う、請求項11に記載の発光ダイオード。
- 前記p型半導体層にオーミック接触する透明電極をさらに含み、
前記第2ボンディングパッドは、前記透明電極上に位置し、前記透明電極に電気的に接続された、請求項1に記載の発光ダイオード。 - 前記透明電極は前記第1絶縁層の一部を覆う、請求項13に記載の発光ダイオード。
- 前記透明電極と第1絶縁層は第1幅(w1)の大きさの分だけ重畳し、
前記透明電極は、前記p型半導体層の縁部から第2幅(w2)の大きさの分だけ離隔し、
前記第1幅(w1)が第2幅(w2)より大きく、
前記第1幅(w1)は10μm以下である、請求項14に記載の発光ダイオード。 - 前記第1幅(w1)は5μmで、
前記第2幅(w2)は4μmである、請求項15に記載の発光ダイオード。 - 前記第1ボンディングパッドから延長する第1延長部をさらに含み、
前記第1延長部は、前記第1絶縁層に形成された各ホールを介してn型半導体層に電気的に接続する、請求項15に記載の発光ダイオード。 - 前記第1ボンディングパッドから延長する第1延長部をさらに含み、
前記第1絶縁層は、互いに離隔した複数のアイランドを含み、
前記第1延長部は、前記各アイランド間の領域で前記n型半導体層に電気的に接続する、請求項15に記載の発光ダイオード。 - 前記第1絶縁層の一部は前記透明電極を覆う、請求項13に記載の発光ダイオード。
- 前記第1絶縁層の側面と前記透明電極の側面は互いに向かい合うように配置された、請求項13に記載の発光ダイオード。
- n型半導体層;
前記n型半導体層の上面を部分的に露出させるように前記n型半導体層上に位置し、活性層と、前記活性層上に位置するp型半導体層と、を含むメサ;
前記n型半導体層に電気的に接続する第1ボンディングパッド;
前記p型半導体層に電気的に接続する第2ボンディングパッド;
前記第2ボンディングパッドにボンディングされたボンディングワイヤ;及び
前記露出したn型半導体層と前記第2ボンディングパッドとの間に配置された金属マイグレーション防止層;を含み、
前記金属マイグレーション防止層は、前記第2ボンディングパッドから離隔して前記第1ボンディングパッドに対向して形成され、前記ボンディングワイヤに隣接した前記p型半導体層の縁部に沿って配置された発光素子。 - 前記金属マイグレーション防止層の長さは、前記メサの縁部の全体長さの1/2より小さい、請求項21に記載の発光素子。
- 前記ボンディングワイヤはシルバーワイヤである、請求項21に記載の発光素子。
- ベース;
前記ベースに隣接して配置された第1リード及び第2リード;
前記ベース上に実装された請求項1に記載の発光ダイオード;
前記発光ダイオードを前記第1リード及び前記第2リードに電気的に連結する各ボンディングワイヤ;及び
前記発光ダイオード及び前記各ボンディングワイヤを覆うモールディング部;を含み、
前記発光ダイオードは、p型半導体層上に配置された透明電極を含み、
前記各ボンディングワイヤは、それぞれ第1ボンディングパッド及び第2ボンディングパッドにボンディングされ、
前記モールディング部は、前記発光ダイオードの前記第1ボンディングパッド及び前記第2ボンディングパッド、前記透明電極及び第1絶縁層に接すると共に、メサによって露出したn型半導体層に部分的に接する発光素子。 - 前記モールディング部と前記透明電極とが接する面積は、前記モールディング部と前記発光ダイオードの他の構成要素とが接する面積より大きい、請求項24に記載の発光素子。
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