EP2203384A1 - Entfernung von fremdmetallen aus anorganischen silanen - Google Patents
Entfernung von fremdmetallen aus anorganischen silanenInfo
- Publication number
- EP2203384A1 EP2203384A1 EP08803098A EP08803098A EP2203384A1 EP 2203384 A1 EP2203384 A1 EP 2203384A1 EP 08803098 A EP08803098 A EP 08803098A EP 08803098 A EP08803098 A EP 08803098A EP 2203384 A1 EP2203384 A1 EP 2203384A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- foreign metal
- content
- containing compound
- metal
- inorganic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/046—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
- C01B33/10784—Purification by adsorption
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
- B01D2253/10—Inorganic adsorbents
- B01D2253/106—Silica or silicates
- B01D2253/108—Zeolites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
Definitions
- the invention relates to a process for the treatment of a composition containing inorganic silanes and at least one foreign metal and / or a foreign metal-containing compound, wherein the composition is brought into contact with at least one adsorbent and recovering the composition in which the content of foreign metal and / or the foreign metal-containing compound is reduced and a corresponding composition having a reduced foreign metal content, as well as the use of organic resins, activated carbons, silicates and / or zeolites for reducing foreign metals and / or foreign metal-containing compounds in compositions of inorganic silanes.
- Silicon compounds used in microelectronics such as for the production of high purity silicon by epitaxy or
- SiOC silicon carbide
- SiC silicon carbide
- SiCl 4 silicon tetrachloride
- SiCI 4 is required in very high purity.
- Metallic impurities in halosilanes negatively affect the attenuation behavior of optical fibers by increasing the attenuation values and thus reducing signal transmission.
- high-purity HSiCb is an important feedstock in the production of solar silicon.
- halogen silanes and / or hydrohalosilanes of high purity in the field of electronics, the semiconductor industry as well as in the pharmaceutical industry wished starting compounds.
- the impurities present in silicon are usually also chlorinated and partially entrained in the subsequent synthesis steps.
- these chlorinated metallic impurities have a disadvantageous effect in the production of components in the field of electronics.
- the process should be inexpensive and easy to handle.
- Another object was to provide inorganic silanes with the lowest foreign metal content and / or lowest content of foreign metal-containing compounds.
- the invention therefore relates to a process for the treatment of a composition comprising inorganic silanes and at least one foreign metal and / or a foreign metal-containing compound, wherein the composition is brought into contact with at least one adsorbent, in particular a dry adsorbent and a composition is obtained, their content of foreign metal and / or at least one foreign metal-containing compound is reduced.
- the foreign metal content and / or the content of the foreign metal-containing compound, - is usually a residual content of foreign metal or foreign metal-containing compound which can be poorly distilled or not further separate - especially independently each can be reduced to a content in the range of below 100 ug / kg, in particular below 25 ug / kg, preferably below 15 ug / kg, more preferably below 10 ug / kg.
- the determination of the foreign metals or of the foreign metal-containing compounds can generally be carried out by quantitative analysis methods, as known to those skilled in the art, for example by atomic absorption spectroscopy (AAS) or photometry, in particular by inductively coupled plasma mass spectrometry (ICP-MS ) and Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES) - to name but a few.
- AAS atomic absorption spectroscopy
- ICP-MS inductively coupled plasma mass spectrometry
- ICP-OES Inductively Coupled Plasma Optical Emission Spectrometry
- Inorganic silanes are, in particular, halosilanes, hydrogen halosilanes, halosilanes which are substituted by at least one organic radical and / or which are hydrogen halosilanes which are substituted by at least one organic radical, and also mixtures of these silanes. According to one
- Embodiment may also be included pure hydrogen silanes.
- each halogen can be selected independently of other halogen atoms from the group fluorine, chlorine, bromine or iodine, see above that, for example, mixed halosilanes such as SiBrCl 2 F or SiBr 2 CIF may be included.
- the inorganic silanes preferably include the chlorine-substituted, predominantly monomeric silanes, such as, for example, tetrachlorosilane, trichlorosilane, dichlorosilane, monochlorosilane, methylthchlorosilane, thymethylsilane, trimethylchlorosilane, dimethyldichlorosilane, phenylmethyldichlorosilane, phenyltrichlorosilane, vinyltrichlorosilane, dihydrogendichlorosilane.
- monomeric silanes such as, for example, tetrachlorosilane, trichlorosilane, dichlorosilane, monochlorosilane, methylthchlorosilane, thymethylsilane, trimethylchlorosilane, dimethyldichlorosilane, phenylmethyldichlorosilane, phenyltrichlor
- the monomeric silanes such as tetramethylsilane, trimethylsilane, dimethylsilane, methylsilane, monosilane or organohydrosilanes or disilane, trisilane, tetrasilane and / or pentasilane and higher homologous silanes can be reduced according to the inventive method in their foreign metal content.
- monomeric silanes such as tetramethylsilane, trimethylsilane, dimethylsilane, methylsilane, monosilane or organohydrosilanes or disilane, trisilane, tetrasilane and / or pentasilane and higher homologous silanes
- monomeric silanes such as tetramethylsilane, trimethylsilane, dimethylsilane, methylsilane, monosilane or organohydrosilanes or disilane, trisilane, tetrasilane and / or pentasilane
- Pentachlorhydrogendisilan or Tetrachlordihydrogendisilan and mixtures thereof with monomeric, linear, branched and / or cyclic oligomeric and / or polymeric inorganic silanes are reduced accordingly in their foreign metal content.
- the cyclic oligomeric compounds include compounds of the type Si n X 2n , with n> 3, such as Si 5 Cli 0 , and to the polymeric inorganic compounds, for example, halopolysilanes, ie polysilicon halides Si n X 2n +2 with n> 5 and / or polysilicon hydrogen halides Si n H a X [( 2n + 2) -a] where n> 2 and 0 ⁇ a ⁇ (2n + 2), where each X is a halogen, such as F, Cl, Br, J, especially Cl ,
- foreign metals and / or foreign metal-containing compounds are considered those in which the metal does not correspond to silicon.
- the adsorption of the at least one foreign metal and / or foreign metal-containing compound is carried out in particular selectively from the inorganic silane-containing composition, while the adsorption both in solution and in the Gas phase take place.
- foreign metals or foreign metal-containing compounds are also understood half metals or compounds containing semimetals, such as boron and boron trichloride.
- the foreign metals and / or foreign metal-containing compounds to be reduced are metal halides, metal hydrogen halides and / or metal hydrides and mixtures of these compounds.
- organic radicals such as alkyl or aryl groups
- functionalized metal halides, metal hydrogen halides or metal hydrides can be removed with very good results from inorganic silanes. Examples include aluminum trichloride or iron (III) -chlohd as well as entrained particulate metals, which can come from continuous processes.
- the contents of boron, aluminum, potassium, lithium, sodium, magnesium, calcium and / or iron can be reduced, in particular, compounds based on these metals are separated off.
- the inventive method is particularly suitable for the separation or reduction of foreign metal-containing compounds whose boiling point is in the range of the boiling point of an inorganic silane or would go with this as an azeotrope. These foreign metal-containing compounds can sometimes be difficult to remove by distillation or not at all.
- a boiling point which is in the range of the boiling point of an inorganic silane compound, a boiling point is considered, which is in the range of ⁇ 20 0 C of the boiling point of one of the inorganic silanes at atmospheric pressure (about 1013.25 hPa or 1013.25 mbar).
- the foreign metal and / or the foreign metal-containing compound can be reduced by 50 to 99 wt .-%.
- the foreign metal content by 70 to 99 wt .-%, particularly preferably reduced by 85 to 99 wt .-%.
- the process allows a reduction of the residual content by 95 to 99% by weight.
- the aluminum content of a composition of inorganic silanes by 50 to 99 wt .-%, preferably 85 to 99 wt .-% and the boron content by at least 70 wt .-%, preferably by 95 to 99.5 wt .-% be reduced.
- the foreign metal content and / or the content of the foreign metal-containing compound in a composition may preferably be in relation to the metallic compound, in particular independently, each to a content in the range of below 100 ug / kg, in particular below 25 ug / kg, preferably below 15 ⁇ g / kg, more preferably 0.1 to 10 ⁇ g / kg are reduced to the respective detection limit.
- Both inorganic and organic adsorbents may be used to carry out the process.
- adsorbents which may also be hydrophilic and / or hydrophobic, may be used to carry out the process.
- a mixture of hydrophilic and hydrophobic adsorbents or an adsorbent having both functions is used.
- Selected may be the adsorbents from the group of organic resins, activated carbons, silicates, especially from silica gels or silica gels, and / or zeolites.
- Preferred adsorbents are Amberlite TM XAD-4 resin from Röhm Haas, activated carbon, in particular Norit activated carbon, Montmohllonite, in particular montmorillonite K 10, zeolites, such as Wessalith F 20, as well as silica gels, such as fumed silica or precipitated silica, in particular Silica Gel Grace Type 432 (extruded at 550 0 C) or Aerosil ® 200th
- the treatment according to the invention of compositions containing inorganic silanes is carried out in such a way that first the Adsorbent is dried carefully to prevent hydrolysis of the silanes to be purified. Subsequently, the dried adsorbent is brought under protective gas atmosphere with the composition in contact, optionally stirred. Suitably, the treatment is carried out at room temperature and atmospheric pressure for several hours. Typically, the composition is contacted with the adsorbent for between 1 minute to 10 hours, typically up to 5 hours. The recovery or separation of the purified composition is usually carried out by filtration, centrifugation or sedimentation. The process can be carried out batchwise or continuously as needed.
- the obtained inorganic silane-based composition has a reduced foreign metal content and / or foreign metal-containing compound content by 50 to 99% by weight.
- the invention likewise provides a process for the treatment of a composition comprising inorganic silanes and at least one foreign metal and / or a foreign metal-containing compound, according to the process described above, wherein at least one inorganic silane corresponds to the general formula I,
- Cl such as tetrachlorosilane, trichlorosilane, trichloromethylsilane, trimethylchlorosilane, dimethyldichlorosilane, phenylmethyldichlorosilane, phenyltrichlorosilane, vinyltrichlorosilane, dihydrodichlorosilane,
- the method is also suitable for the treatment of compositions containing compounds of the type of general formula I,
- the foreign metal content and / or the content of the foreign metal-containing compound of this composition may preferably be in respect of the metallic compound, in particular independently of each other, each in a content in the Range of less than 100 ⁇ g / kg, in particular of less than 25 ⁇ g / kg, preferably less than 15 ⁇ g / kg, particularly preferably less than 10 ⁇ g / kg.
- the invention relates to a composition
- a composition comprising at least one inorganic silane of the general formula I,
- the invention also provides the use of an organic resin, activated carbon, a silicate, in particular a silica gel, and / or a zeolite for reducing the content of at least one foreign metal and / or at least a foreign metal-containing compound of compositions containing inorganic silanes of the general formula I,
- the adsorbents are carefully dried prior to use in the process to prevent hydrolysis of the silanes to be purified.
- a defined amount of adsorbent is placed in a 500 ml stirring apparatus comprising a glass four-necked flask with condenser (water, dry ice), dropping funnel, Stirrer, thermometer and nitrogen, presented and dried under vacuum ( ⁇ 1 mbar) and about 170 0 C for 5 hours, then slowly aerated with dry nitrogen and cooled. Subsequently, 250 ml of the silane to be purified are added via the dropping funnel. Over a period of 5 hours, the adsorption process is carried out under normal pressure at room temperature under a protective gas atmosphere. The adsorbent is separated from the silane by passing it through a frit (Por. 4) into an evacuated 500 ml glass flask with a discharge device. Subsequently, the glass flask is aerated with nitrogen and drained into a nitrogen-purged Schott glass bottle.
- Example 1.4 The following example was carried out according to the general procedure with the amounts given here.
- Wessalith F 20 20.17 g of Wessalith F 20 were pretreated as described in the general procedure under Example 1.2, and 250 ml of trichlorosilane were added. The metal contents before and after treatment were determined by ICP-MS.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007050199A DE102007050199A1 (de) | 2007-10-20 | 2007-10-20 | Entfernung von Fremdmetallen aus anorganischen Silanen |
PCT/EP2008/060863 WO2009049944A1 (de) | 2007-10-20 | 2008-08-20 | Entfernung von fremdmetallen aus anorganischen silanen |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2203384A1 true EP2203384A1 (de) | 2010-07-07 |
Family
ID=40032410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08803098A Ceased EP2203384A1 (de) | 2007-10-20 | 2008-08-20 | Entfernung von fremdmetallen aus anorganischen silanen |
Country Status (10)
Country | Link |
---|---|
US (1) | US20100266489A1 (de) |
EP (1) | EP2203384A1 (de) |
JP (1) | JP2011500489A (de) |
KR (1) | KR20100087106A (de) |
CN (1) | CN101412513A (de) |
BR (1) | BRPI0817668A2 (de) |
CA (1) | CA2701771A1 (de) |
DE (1) | DE102007050199A1 (de) |
RU (1) | RU2010119943A (de) |
WO (1) | WO2009049944A1 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004045245B4 (de) * | 2004-09-17 | 2007-11-15 | Degussa Gmbh | Vorrichtung und Verfahren zur Herstellung von Silanen |
DE102005041137A1 (de) | 2005-08-30 | 2007-03-01 | Degussa Ag | Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid |
DE102005046105B3 (de) * | 2005-09-27 | 2007-04-26 | Degussa Gmbh | Verfahren zur Herstellung von Monosilan |
DE102006003464A1 (de) * | 2006-01-25 | 2007-07-26 | Degussa Gmbh | Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung |
DE102007007874A1 (de) * | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Silane |
DE102007059170A1 (de) * | 2007-12-06 | 2009-06-10 | Evonik Degussa Gmbh | Katalysator und Verfahren zur Dismutierung von Wasserstoff enthaltenden Halogensilanen |
DE102008002537A1 (de) * | 2008-06-19 | 2009-12-24 | Evonik Degussa Gmbh | Verfahren zur Entfernung von Bor enthaltenden Verunreinigungen aus Halogensilanen sowie Anlage zur Durchführung des Verfahrens |
JP5206185B2 (ja) * | 2008-07-14 | 2013-06-12 | 東亞合成株式会社 | 高純度クロロポリシランの製造方法 |
DE102008054537A1 (de) * | 2008-12-11 | 2010-06-17 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration |
DE102009027729A1 (de) | 2009-07-15 | 2011-01-27 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus anorganischen Silanen |
DE102009027730A1 (de) * | 2009-07-15 | 2011-01-27 | Evonik Degussa Gmbh | Verahren und Verwendung von aminofunktionellen Harzen zur Dismutierung von Halogensilanen und zur Entfernung von Fremdmetallen |
KR101629061B1 (ko) * | 2009-08-27 | 2016-06-09 | 덴카 주식회사 | 클로로실란의 정제 방법 |
DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
DE102010002342A1 (de) | 2010-02-25 | 2011-08-25 | Evonik Degussa GmbH, 45128 | Verwendung der spezifischen Widerstandsmessung zur indirekten Bestimmung der Reinheit von Silanen und Germanen und ein entsprechendes Verfahren |
CN101913610B (zh) * | 2010-09-21 | 2012-07-25 | 乐山乐电天威硅业科技有限责任公司 | 去除三氯氢硅中硼杂质的方法 |
DE102011004058A1 (de) | 2011-02-14 | 2012-08-16 | Evonik Degussa Gmbh | Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung |
US8895918B2 (en) * | 2011-06-03 | 2014-11-25 | Purdue Research Foundation | Ion generation using modified wetted porous materials |
CN102701217A (zh) * | 2012-06-19 | 2012-10-03 | 中国恩菲工程技术有限公司 | 一种二氯二氢硅除杂设备 |
CN102701216B (zh) * | 2012-06-19 | 2015-06-03 | 中国恩菲工程技术有限公司 | 一种二氯二氢硅除杂方法 |
JP6069167B2 (ja) * | 2013-10-23 | 2017-02-01 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
CN103553058B (zh) * | 2013-11-11 | 2015-07-22 | 新特能源股份有限公司 | 一种高纯精制三氯氢硅的生产工艺 |
DE102014203810A1 (de) * | 2014-03-03 | 2015-09-03 | Evonik Degussa Gmbh | Verfahren zur Herstellung reiner Octachlortrisilane und Decachlortetrasilane |
RU2605126C1 (ru) * | 2014-06-05 | 2016-12-20 | федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Воронежский государственный университет" (ФГБУ ВПО ВГУ) | Способ получения гидрофобизированного клиноптилолитового туфа |
DE102014013250B4 (de) * | 2014-09-08 | 2021-11-25 | Christian Bauch | Verfahren zur Aufreinigung halogenierter Oligosilane |
DE102014220539A1 (de) * | 2014-10-09 | 2016-04-14 | Wacker Chemie Ag | Reinigung von Chlorsilanen mittels Destillation und Adsorption |
US9786478B2 (en) | 2014-12-05 | 2017-10-10 | Purdue Research Foundation | Zero voltage mass spectrometry probes and systems |
JP6948266B2 (ja) | 2015-02-06 | 2021-10-13 | パーデュー・リサーチ・ファウンデーションPurdue Research Foundation | プローブ、システム、カートリッジ、およびその使用方法 |
DE102016206090A1 (de) | 2016-04-12 | 2017-10-12 | Wacker Chemie Ag | Verfahren zur Abtrennung von Aluminiumchlorid aus Silanen |
CN109553636B (zh) * | 2017-09-27 | 2021-03-09 | 湖北兴瑞硅材料有限公司 | 一种有机硅氧烷混合环体除杂的方法 |
CN109179426A (zh) * | 2018-11-19 | 2019-01-11 | 天津科技大学 | 一种反应精馏去除三氯氢硅中甲基二氯硅烷的装置和方法 |
CN109575065B (zh) * | 2018-12-25 | 2023-05-16 | 金宏气体股份有限公司 | 一种高纯正硅酸乙酯的生产方法及生产系统 |
CN114258396B (zh) * | 2019-08-22 | 2024-09-20 | 美国陶氏有机硅公司 | 用于纯化硅化合物的方法 |
CN114247180B (zh) * | 2021-12-24 | 2023-07-04 | 亚洲硅业(青海)股份有限公司 | 一种含氧基团的活性炭在去除四氯化硅中的杂质的应用 |
CN116459788B (zh) * | 2022-01-11 | 2024-09-17 | 烟台万华电子材料有限公司 | 一种乙硅烷提纯剂及其制备方法和应用 |
CN116924415A (zh) * | 2023-06-26 | 2023-10-24 | 中化学华陆新材料有限公司 | 一种超高纯度石英砂的制备方法 |
Family Cites Families (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2877097A (en) * | 1958-05-06 | 1959-03-10 | Guenter A Wolff | Method of purification of silicon compounds |
DE2546957C3 (de) * | 1975-10-20 | 1980-10-23 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Reinigung von Halogensilanen |
IT1088820B (it) * | 1977-12-05 | 1985-06-10 | Smiel Spa | Processo di purificazione di clorosilani impiegabili nella preparazione di silicio per elettronica |
US4713230A (en) * | 1982-09-29 | 1987-12-15 | Dow Corning Corporation | Purification of chlorosilanes |
JPH0688772B2 (ja) * | 1985-02-27 | 1994-11-09 | 昭和電工株式会社 | ジクロロシランの精製法 |
US4786493A (en) * | 1985-11-22 | 1988-11-22 | Estee Lauder Inc. | Hair protection composition |
DE3711444A1 (de) * | 1987-04-04 | 1988-10-13 | Huels Troisdorf | Verfahren und vorrichtung zur herstellung von dichlorsilan |
DE3744211C1 (de) * | 1987-12-24 | 1989-04-13 | Huels Troisdorf | Verfahren zur Herstellung von Cyanopropylalkoxysilanen und Vorrichtung zur Durchfuehrung des Verfahrens |
DE3828549A1 (de) * | 1988-08-23 | 1990-03-08 | Huels Chemische Werke Ag | Verfahren zur entfernung von silanverbindungen aus silanhaltigen abgasen |
JP2570409B2 (ja) * | 1988-12-06 | 1997-01-08 | 三菱マテリアル株式会社 | クロロポリシランの精製方法 |
DE3908791A1 (de) * | 1989-03-17 | 1990-09-20 | Huels Chemische Werke Ag | Verfahren zur herstellung von siliciumorganischen verbindungen |
US5208359A (en) * | 1990-07-09 | 1993-05-04 | Huels Aktiengesellschaft | Process for the preparation of di-tert.butoxydiacetoxysilane |
DE4021869A1 (de) * | 1990-07-09 | 1992-01-16 | Huels Chemische Werke Ag | Verfahren zur verhinderung von verfaerbungen in vinylacetoxysilanen |
DE4025866A1 (de) * | 1990-08-16 | 1992-02-20 | Huels Chemische Werke Ag | Verfahren zur herstellung von mercaptosilanen |
US5445742A (en) | 1994-05-23 | 1995-08-29 | Dow Corning Corporation | Process for purifying halosilanes |
EP0702017B1 (de) * | 1994-09-14 | 2001-11-14 | Degussa AG | Verfahren zur Herstellung von chloridarmen bzw. chloridfreien aminofunktionellen Organosilanen |
DE4434200C2 (de) * | 1994-09-24 | 2002-06-27 | Degussa | Verfahren zur Herstellung von 3-Acryloxypropylalkoxysilanen |
DE4435390C2 (de) * | 1994-10-04 | 2001-07-26 | Degussa | Verfahren zur Herstellung von Aminopropylalkoxysilanen in Gegenwart von geformten polymeren Rhodiumkomplex-Katalysatoren und deren Verwendung |
DE4438032C2 (de) * | 1994-10-25 | 2001-09-27 | Degussa | Verfahren zur Herstellung von Hydrogenalkoxysilanen |
CA2161181A1 (en) * | 1994-10-25 | 1996-04-26 | Frank Kropfgans | Process for the preparation of 3-halo- and -pseudohaloalkylsilane esters |
DE19516386A1 (de) * | 1995-05-04 | 1996-11-07 | Huels Chemische Werke Ag | Verfahren zur Herstellung von an chlorfunktionellen Organosilanen armen bzw. freien aminofunktionellen Organosilanen |
DE19520737C2 (de) * | 1995-06-07 | 2003-04-24 | Degussa | Verfahren zur Herstellung von Alkylhydrogenchlorsilanen |
US6168652B1 (en) * | 1995-10-23 | 2001-01-02 | Dow Corning Corporation | Process for purifying halosilanes |
DE19632157A1 (de) * | 1996-08-09 | 1998-02-12 | Huels Chemische Werke Ag | Verfahren zur kontinuierlichen Herstellung von 3-Halogen-Propyl-Organosilanen |
JP3965734B2 (ja) * | 1997-09-11 | 2007-08-29 | 株式会社ニコン | 石英ガラスおよびその製造方法 |
DE19644561C2 (de) * | 1996-10-26 | 2003-10-16 | Degussa | Verfahren zur Herstellung von Fluoralkyl-Gruppen tragenden Silicium-organischen Verbindungen |
DE19649023A1 (de) * | 1996-11-27 | 1998-05-28 | Huels Chemische Werke Ag | Verfahren zur Entfernung von Restmengen an acidem Chlor in Carbonoyloxysilanen |
DE19649027A1 (de) * | 1996-11-27 | 1998-05-28 | Huels Chemische Werke Ag | Verfahren zur Herstellung von Organocarbonoyloxysilanen |
DE19649028A1 (de) * | 1996-11-27 | 1998-05-28 | Huels Chemische Werke Ag | Verfahren zur kontinuierlichen Herstellung von Carbonoyloxysilanen |
TW436500B (en) * | 1997-06-17 | 2001-05-28 | Huels Chemische Werke Ag | N-[ω-(methyl),ω-(silyl)]alkyl-N-organocarboxamides, oligomeric and polycondensed Si-containing compounds thereof, processes for their preparation, and their use |
DE19746862A1 (de) * | 1997-10-23 | 1999-04-29 | Huels Chemische Werke Ag | Vorrichtung und Verfahren für Probenahme und IR-spektroskopische Analyse von hochreinen, hygroskopischen Flüssigkeiten |
DE19805083A1 (de) * | 1998-02-09 | 1999-08-12 | Huels Chemische Werke Ag | Verfahren zur Herstellung von 3-Glycidyloxypropyltrialkoxysilanen |
DE19821156B4 (de) * | 1998-05-12 | 2006-04-06 | Degussa Ag | Verfahren zur Minderung von Resthalogengehalten und Farbzahlverbesserung in Alkoxysilanen oder Alkoxysilan-basierenden Zusammensetzungen und die Verwendung von Aktivkohle dazu |
DE19837010A1 (de) * | 1998-08-14 | 2000-02-17 | Degussa | Verfahren zur Herstellung von Acetoxysilanen |
DE19847786A1 (de) * | 1998-10-16 | 2000-04-20 | Degussa | Vorrichtung und Verfahren zum Befüllen und Entleeren eines mit brennbarem sowie aggressivem Gas beaufschlagten Behälters |
DE19849196A1 (de) * | 1998-10-26 | 2000-04-27 | Degussa | Verfahren zur Neutralisation und Minderung von Resthalogengehalten in Alkoxysilanen oder Alkoxysilan-basierenden Zusammensetzungen |
ATE272065T1 (de) * | 1998-11-06 | 2004-08-15 | Degussa | Verfahren zur herstellung von alkoxysilanen |
EP0999214B1 (de) * | 1998-11-06 | 2004-12-08 | Degussa AG | Verfahren zur Herstellung von chloridarmen oder chloridfreien Alkoxysilanen |
DE19918115C2 (de) * | 1999-04-22 | 2002-01-03 | Degussa | Verfahren zur Herstellung von Vinylchlorsilanen |
DE19918114C2 (de) * | 1999-04-22 | 2002-01-03 | Degussa | Verfahren und Vorrichtung zur Herstellung von Vinylchlorsilanen |
DE19934576C2 (de) * | 1999-07-23 | 2003-12-18 | Degussa | Verfahren zur Herstellung von Epoxysilanen |
DE19954635A1 (de) * | 1999-11-13 | 2001-05-17 | Degussa | Verfahren zur Herstellung von Alkoxysilanen |
DE19963433A1 (de) * | 1999-12-28 | 2001-07-12 | Degussa | Verfahren zur Abscheidung von Chlorsilanen aus Gasströmen |
DE10057482A1 (de) * | 2000-11-20 | 2002-05-23 | Solarworld Ag | Verfahren zur Reinigung von Trichlorsilan |
DE10058620A1 (de) * | 2000-11-25 | 2002-05-29 | Degussa | Verfahren zur Herstellung von Aminoalkylsilanen |
DE10116007A1 (de) * | 2001-03-30 | 2002-10-02 | Degussa | Vorrichtung und Verfahren zur Herstellung von im Wesentlichen halogenfreien Trialkoxysilanen |
DE10126669A1 (de) * | 2001-06-01 | 2002-12-05 | Degussa | Verfahren zur Spaltung von cyclischen Organosilanen bei der Herstellung von aminofunktionellen Organoalkoxysilanen |
EP1306381B1 (de) * | 2001-10-10 | 2012-09-12 | Evonik Degussa GmbH | Verfahren zur Hydrosilylierung ungesättigter aliphatischer Verbindungen |
DE10243022A1 (de) * | 2002-09-17 | 2004-03-25 | Degussa Ag | Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor |
DE10330022A1 (de) * | 2003-07-03 | 2005-01-20 | Degussa Ag | Verfahren zur Herstellung von Iow-k dielektrischen Filmen |
DE10357091A1 (de) * | 2003-12-06 | 2005-07-07 | Degussa Ag | Vorrichtung und Verfahren zur Abscheidung feinster Partikel aus der Gasphase |
DE102004008442A1 (de) * | 2004-02-19 | 2005-09-15 | Degussa Ag | Siliciumverbindungen für die Erzeugung von SIO2-haltigen Isolierschichten auf Chips |
DE102004010055A1 (de) * | 2004-03-02 | 2005-09-22 | Degussa Ag | Verfahren zur Herstellung von Silicium |
WO2005092790A2 (en) * | 2004-03-19 | 2005-10-06 | Entegris, Inc. | Method and apparatus for purifying inorganic halides and oxyhalides using zeolites |
DE102004025766A1 (de) * | 2004-05-26 | 2005-12-22 | Degussa Ag | Herstellung von Organosilanestern |
DE102004027563A1 (de) * | 2004-06-04 | 2005-12-22 | Joint Solar Silicon Gmbh & Co. Kg | Silizium sowie Verfahren zu dessen Herstellung |
DE102004037675A1 (de) * | 2004-08-04 | 2006-03-16 | Degussa Ag | Verfahren und Vorrichtung zur Reinigung von Wasserstoffverbindungen enthaltendem Siliciumtetrachlorid oder Germaniumtetrachlorid |
DE102004038718A1 (de) * | 2004-08-10 | 2006-02-23 | Joint Solar Silicon Gmbh & Co. Kg | Reaktor sowie Verfahren zur Herstellung von Silizium |
DE102004045245B4 (de) * | 2004-09-17 | 2007-11-15 | Degussa Gmbh | Vorrichtung und Verfahren zur Herstellung von Silanen |
ATE489333T1 (de) * | 2005-03-05 | 2010-12-15 | Jssi Gmbh | Reaktor und verfahren zur herstellung von silizium |
DE102005041137A1 (de) * | 2005-08-30 | 2007-03-01 | Degussa Ag | Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid |
DE102005046105B3 (de) * | 2005-09-27 | 2007-04-26 | Degussa Gmbh | Verfahren zur Herstellung von Monosilan |
DE102006003464A1 (de) * | 2006-01-25 | 2007-07-26 | Degussa Gmbh | Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung |
DE102007023759A1 (de) * | 2006-08-10 | 2008-02-14 | Evonik Degussa Gmbh | Anlage und Verfahren zur kontinuierlichen industriellen Herstellung von Fluoralkylchlorsilan |
DE102007007874A1 (de) * | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Silane |
DE102007052325A1 (de) * | 2007-03-29 | 2009-05-07 | Erk Eckrohrkessel Gmbh | Verfahren zum gleitenden Temperieren chemischer Substanzen mit definierten Ein- und Ausgangstemperaturen in einem Erhitzer und Einrichtung zur Durchführung des Verfahrens |
DE102007048937A1 (de) * | 2007-10-12 | 2009-04-16 | Evonik Degussa Gmbh | Entfernung von polaren organischen Verbindungen und Fremdmetallen aus Organosilanen |
DE102007059170A1 (de) * | 2007-12-06 | 2009-06-10 | Evonik Degussa Gmbh | Katalysator und Verfahren zur Dismutierung von Wasserstoff enthaltenden Halogensilanen |
DE102009053804B3 (de) * | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
-
2007
- 2007-10-20 DE DE102007050199A patent/DE102007050199A1/de not_active Withdrawn
-
2008
- 2008-08-20 WO PCT/EP2008/060863 patent/WO2009049944A1/de active Application Filing
- 2008-08-20 RU RU2010119943/05A patent/RU2010119943A/ru unknown
- 2008-08-20 BR BRPI0817668 patent/BRPI0817668A2/pt not_active IP Right Cessation
- 2008-08-20 KR KR1020107008471A patent/KR20100087106A/ko not_active Application Discontinuation
- 2008-08-20 JP JP2010529312A patent/JP2011500489A/ja not_active Withdrawn
- 2008-08-20 CA CA2701771A patent/CA2701771A1/en not_active Abandoned
- 2008-08-20 US US12/738,246 patent/US20100266489A1/en not_active Abandoned
- 2008-08-20 EP EP08803098A patent/EP2203384A1/de not_active Ceased
- 2008-10-17 CN CNA2008101714446A patent/CN101412513A/zh active Pending
Non-Patent Citations (1)
Title |
---|
See references of WO2009049944A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN101412513A (zh) | 2009-04-22 |
WO2009049944A1 (de) | 2009-04-23 |
KR20100087106A (ko) | 2010-08-03 |
US20100266489A1 (en) | 2010-10-21 |
JP2011500489A (ja) | 2011-01-06 |
RU2010119943A (ru) | 2011-11-27 |
DE102007050199A1 (de) | 2009-04-23 |
CA2701771A1 (en) | 2009-04-23 |
BRPI0817668A2 (pt) | 2015-03-31 |
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