EP1811066B1 - Method for production of epitaxial wafer - Google Patents

Method for production of epitaxial wafer Download PDF

Info

Publication number
EP1811066B1
EP1811066B1 EP07000457.7A EP07000457A EP1811066B1 EP 1811066 B1 EP1811066 B1 EP 1811066B1 EP 07000457 A EP07000457 A EP 07000457A EP 1811066 B1 EP1811066 B1 EP 1811066B1
Authority
EP
European Patent Office
Prior art keywords
region
crystal
nitrogen
density
epi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP07000457.7A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1811066A2 (en
EP1811066A3 (en
Inventor
Katsuhiko Dr. Nakai
Koji Fukuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic AG filed Critical Siltronic AG
Publication of EP1811066A2 publication Critical patent/EP1811066A2/en
Publication of EP1811066A3 publication Critical patent/EP1811066A3/en
Application granted granted Critical
Publication of EP1811066B1 publication Critical patent/EP1811066B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Definitions

  • This invention relates to a method for the production of an epitaxial wafer.
  • a semiconductor substrate particularly a silicon single crystal wafer (hereinafter referred to occasionally as “substrate”), is used as the substrate for the manufacture of a highly integrated MOS device.
  • substrate silicon single crystal wafer
  • Most silicon single crystal wafers are substrates that are cut out of an ingot of silicon single crystal produced by the Czokralski (CZ) method.
  • the silicon single crystal wafer of this kind suffers supersaturated presence of oxygen that has been incorporated during the production of a single crystal. This oxygen is precipitated during the subsequent device process and eventually caused to form an oxygen precipitate in the substrate. When this oxygen precipitate exists in a generous amount in the substrate, the heavy metals subsequently incorporated during the device process is known to be absorbed in the substrate, and this leads to the effect that the surface of the substrate (i.e. a device active layer) is kept clean.
  • IG intrinsic gettering
  • the silicon single crystal wafer For the purpose of securing the gettering ability, the silicon single crystal wafer requires presence of oxygen precipitate beyond a fixed density at the center of the thickness thereof. As a result of a test conducted to date, it has been ascertained that when the silicon single crystal wafer secures presence of oxygen precipitate at a density of not less than 1 ⁇ 10 9 pieces/cm 3 at the center of the thickness thereof, it manifests a gettering ability against such heavy metals as Fe, Ni, and Cu even in a heat treatment performed in the low-temperature device process that has the highest temperature of not higher than 1100°C.
  • the silicon semiconductor substrate having a silicon single crystal layer (epi-layer) deposited (epi-deposited) on the surface of a silicon single crystal wafer has found acceptance.
  • Numerous epitaxial wafers have been used for manufacturing devices of higher density and higher integration.
  • the silicon single crystal wafer lacking an epi-deposition is called a mirror wafer and discriminated.
  • the base plate on which the epi-deposition is effected is called a "substrate.”
  • the epitaxial wafer allows no presence of such grown-in defect as COP (crystal originated particle) on the surface of the base plate and is known to enhance such device property as the property of oxide film pressure resistance.
  • COP crystal originated particle
  • the epitaxial wafer uses on the production process thereof the epitaxial deposition method that consists in depositing a silicon single crystal layer at a high temperature of not lower than 1100°C.
  • the epitaxial wafer subjected to this high-temperature treatment is incapable of inducing oxygen precipitation during the device process and becomes inferior in the gettering property to the aforementioned mirror wafer devoid of the epi-deposition.
  • the cause of this disadvantage is explained by supposing that the oxygen precipitation nucleus destined to form the nucleus of oxygen precipitation in the subsequent device process ceases to exist during the high-temperature heat treatment of the epi-deposition process.
  • the oxygen deposition does not occur at a temperature exceeding 800°C, though it takes place in a temperature range falling short of 800°C.
  • Such device process as rarely involves a heat treatment below 800°C, therefore, possibly reveals deficiency in the IG ability because of the failure to induce oxygen precipitation sufficiently.
  • the oxygen precipitation occurs even in a temperature range exceeding 800°C and, what is more, the density of the oxygen precipitate is always constant irrespective of the conditions of heat treatment.
  • this base plate as the substrate, it is made possible to secure the oxygen precipitation subsequent to the epi-deposition without adding such an uncalled-for process as the pre-heat treatment prior to the epi-deposition.
  • the epitaxial wafer resulting from using the nitrogen-added base plate as the substrate retains the density of oxygen precipitation always being constant irrespective of the condition of the heat treatment, it is made possible to produce such an epitaxial wafer as manifests the IG ability in any device process. This fact constitutes superiority of nitrogen that is not found in any other elements such as, for example, carbon.
  • the nitrogen-doped base plate is useful for the sake of securing stable oxygen precipitation without requiring an extra heat treatment. It has been found, however, that when the nitrogen-doped base plate is subjected to epi-deposition, the resultant epi-layer suffers occurrence of such crystal defects as N-SF and E-pit.
  • FIG. 1 is an explanatory drawing for explaining the N-SF defect among other crystal defects.
  • An epitaxial wafer 100 illustrated in the drawing is a product of deposition of an epi-layer 102 on a substrate 101 adapted for epi-deposition.
  • FIG. 1 (a) is a schematic perspective view of the inner structure of the epitaxial wafer 100, (b) a plan view of the N-SF part as observed from above, and (c) a cross section of the N-SF part.
  • the N-SF is a an interstitial atom-type stacking fault on the ⁇ 111 ⁇ face extending from an interface 103 between the substrate 101 and the epi-layer 102 to the surface of the epi-layer 102. Particularly when the stacking fault in the substrate 101 appears on the interface 103, the N-SF tends to occur with that fault 105 as the starting point.
  • the N-SF when the substrate 101 is subjected to epi-deposition, assumes the structure of an equilateral triangle having a side length of about T x ⁇ 2 [ ⁇ m], wherein T [ ⁇ m] denotes the thickness of epi-layer. Since the N-SF of this structure, when visually examined with a surface analyzer, appears as the same scattered image as a foreign matter on the base plate, the number of pieces of the N-SF can be evaluated by subjecting the base plate subsequent to the epi-deposition to the measurement with the surface analyzer.
  • FIG. 2 is an explanatory drawing for explaining the E-pit defect among other crystal defects.
  • An epitaxial wafer 100a illustrated in the drawing has resulted from selectively etching an epitaxial wafer having generated E-pit.
  • FIG. 2 (a) is a schematic perspective view, (b) a plan view of the E-pit part as observed from above, and (c) a cross section of the E-pit part.
  • the E-pit consists of one or several dislocations 107 extending from the defect 105 present in the interface 103 between the substrate 101 and the epi-layer 102 to the surface of the epi-layer 102.
  • the E-pit escapes detection with a surface analyzer, the number of E-pits can be evaluated by counting the pits which are formed by subjecting the surface of the base plate subsequent to the epi-layer deposition to such selective etching as light etching and secco etching.
  • the epitaxial wafer surface subsequent to selctive etching is denoted as 100a.
  • the etching amount [ ⁇ m] by the selective etching is supposed to be equal to or smaller than the film thickness T [ ⁇ m] of the epi-layer.
  • the N-SF and the E-pit are presumed to be the defects that are formed in the epi-layer 102 from the crystal defects present from the beginning in the substrate 101 as the starting points.
  • the probability that the defect induces a breakage in a device having an electrode surface area of 20 mm 2 will exceed 5%. Since an electrode including such defects numerously suffers deterioration of such electric properties as TDDB property, a base plate in which such defects are present numerously cannot be used as a silicon semiconductor base plate for a high-quality device. It is, therefore, necessary that the amounts of N-SF or E-pit be kept below 0.05 piece/cm 2 .
  • FIG. 3 is an explanatory drawing for explaining the relation of the defect region and the nitrogen concentration in the silicon single crystal that has been pulled by the Czochralski (CZ) method; (a) a graph showing the relation between the defect region present in a base plate used for a substrate prior to epi-deposition and the nitrogen concentration and (b) a schematic drawing showing the defect region in a silicon single crystal ingot 200 in the course of being pulled and the nitrogen concentration distribution.
  • CZ Czochralski
  • the CZ method consists in pulling a silicon single crystal ingot 200 from a silicon melt 201 upward and meanwhile causing it to grow.
  • a base plate cut out of this silicon single crystal ingot 200 three kinds of defect regions (V region, OSF region, and I region) are present as shown in FIG. 3 (a) .
  • the V region is a region into which excess vacancies are introduced from the solid-liquid interface during the growth of crystal. It suffers the presence of voids resulting from aggregation of such atomic vacancies.
  • the OSF region is a region into which excess vacancies are introduced from the solid-liquid interface during the growth of crystal. This region is where OSF occurs when the silicon single crystal wafer is subjected to an oxidizing heat treatment.
  • OSF refers to a disk-like stacking fault measuring about several ⁇ m in diameter and including oxygen precipitates (OSF nuclei) at the center. It is formed in consequence of the phenomenon that the interstitial atoms generated by the oxidizing heat treatment from the interface 103 between the oxide film and the silicon mother phase are aggregated on the periphery of the OSF nucleus.
  • OSF nucleus refers to a special oxygen precipitate possessing the nature of gathering interstitial atoms among other oxygen precipitates.
  • OSF nucleus has a small size (presumed to be not more than 10 nm), it cannot be detected by the existing method of evaluation using a contamination meter or an infrared tomography. The presence of OSF, therefore, is not ascertained unless the sample is subjected to the oxidizing heat treatment.
  • the I region is a region into which excess interstitial atoms are introduced from the solid-liquid interface during the growth of crystal. It includes a dislocation loop resulting from the aggregation of interstitial atoms.
  • the defect region of a base plate cut out of a nitrogen-doped silicon single crystal ingot can be expressed by a two-dimensional defect region map having nitrogen concentration and V/G as two axes as shown in FIG. 3 (a) .
  • one pull-out of single crystal out of the nitrogen-doped silicon has a certain spread of nitrogen concentration and V/G values forming a tetragonal region (called growth condition region) in the nitrogen concentration-V/G diagram.
  • growth condition region a tetragonal region in the nitrogen concentration-V/G diagram.
  • the addition of nitrogen to the CZ-silicon single crystal is implemented by using a nitrogen-doped melt. It has been known that the ratio (segregation coefficient) of nitrogen drawn into the crystal from the melt while the melt is being solidified is extremely small. As a result, the greater part of the nitrogen in the melt remains behind in the melt and the nitrogen concentration in the melt increases in accordance as the growth of crystal proceeds. In the lower part of the crystal, nitrogen concentration is heightened consequently.
  • G [°C/mm] from the melting point to 1350°C in the direction of the axis of crystal growth depends on the cooling capacity for the crystal, the value of G is larger in the outer peripheral part of crystal because the outer peripheral part of crystal is generally cooled easily. As a result, the value of V/G is lower in the outer peripheral part of crystal.
  • the defect region of the nitrogen-doped silicon single crystal of this nature can be described by having the range of growth condition of one silicon single crystal ingot overlap the two-dimensional defect region map using nitrogen concentration and V/G as two axes.
  • the V region is fated to occur in the central side of crystal and the OSF region in the outer peripheral part of crystal.
  • the void region is expanded throughout the entire surface of the base plate when the range of nitrogen concentration is fixed and the value of V/G is increased.'
  • the void region is contracted to the center of the base plate and the I region is expanded throughout the entire surface of the base plate when the value of V/G is decreased.
  • the OSF region is generated from the outer peripheral part and expanded throughout the entire surface of the base plate.
  • FIG. 4 (.a) is a graph showing the relation of the nitrogen concentration and the V/G and (b) type drawings showing the status of occurrence of N-SF and E-pit in the in-plane part of a base plate as separated by growth condition regions.
  • the growth condition region 1 has nitrogen concentration of 5 x 10 13 ⁇ 1 ⁇ 10 14 atoms/cm 3 and V/G (relative value) of 1.1 ⁇ 2.0
  • the growth condition region 2 has nitrogen concentration of 1 ⁇ 10 14 ⁇ 5 ⁇ 10 14 atoms/cm 3 and V/G (relative value) of 1.1 ⁇ 2.0
  • the growth condition region 3 has nitrogen concentration of 5 x 10 14 ⁇ 2 ⁇ 10 15 atoms/cm 3 and V/G (relative value) of 1.1 ⁇ 2.0
  • the growth condition region 4 has nitrogen concentration of 1 ⁇ 10 14 ⁇ 5 x 10 14 atoms/cm 3 and V/G (relative value) of 1.3 - 2.0.
  • V/G shown herein have been obtained by the normalization that uses as the unity, 1, the value of V/G at the position at which an OS occurs in a base plate when a crystal with no nitrogen doped is pulled.
  • the N-SF and the E-pit which are epi-layer defects, appear at a position corresponding to the OSF region in a substrate prior to the epi-deposition.
  • N-SF occurs on the outer peripheral side only on the bottom side of a crystal.
  • N-SF or E-pit occurs on the outer peripheral side from the top side through the bottom side of a crystal.
  • Patent Document 2 and Patent Document 3 a method for eliminating an OSF region from a base plate and avoiding an epi-layer defect by controlling crystal growth conditions is disclosed (corresponding to growth condition region 4).
  • the method for avoiding the epi-layer defect by doping carbon besides nitrogen as described above is capable of preventing the epi-layer defect without resorting to a measure to increase the lower limit of the V/G value by controlling the crystal growth condition and consequently enabling stable supply of such a large-diameter crystal as avoids forming an epi-layer defect.
  • Radial distribution variation of the density of oxygen precipitate (Maximum density of oxygen precipitate - minimum density of oxygen precipitate)/Maximum density of oxygen precipitate
  • the method that employs simultaneous doping of nitrogen plus carbon as disclosed in Patent Document 4 is effective in restraining the epi-layer fault.
  • the simultaneous doping of carbon has no effect.
  • the radial distribution variation of the density of oxygen precipitate inevitably exceeds 0. 5 because of the presence of a portion in which the density of oxygen precipitate fell down as compared with the environment thereof in spite of the success achieved in preventing the epi-layer defect.
  • This invention concerns a method for the production of an epitaxial water as set forth in claim 1. It is aimed at providing a method for the production of an epitaxial wafer having oxygen precipitation occur sufficiently subsequent to epi-deposition and not suffering presence of an epi-layer defect caused by nitrogen and an epitaxial wafer manufactured by this method of production.
  • the range of the nitrogen concentration and V/G is set between the upper limit [mm 2 /°Cmin] of 1.4 exp(6.2 x 10 -16 x nitrogen concentration [atoms/cm 3 ]) x (V/G) crit and the lower limit [mm 2 /°Cmin] of exp (-7.1 ⁇ 10 -16 x nitrogen concentration [atoms/cm 3 ] ) x (V/G) crit (wherein (V/G) crit denotes the V/G value of the part of silicon single crystal with no nitrogen doped that is contiguous to the boundary of V region and I region) for the purpose of conferring radial direction uniformity on the density of oxygen precipitate generated subsequent to a heat treatment and keeping the radial distribution variation of the density of oxygen precipitate below 0.5.
  • V/G the interior of a base plate will suffer occurrence of a region in which the density of voids measuring 50 - 150 nm in size falls in the range of 10 4 ⁇ 2 ⁇ 10 5 /cm 3 and consequently the density of radial direction dispersion of the density of oxygen precipitate will inevitably exceed 0.5. If the value of V/G falls short of the lower limit mentioned above, the interior of the base plate will suffer occurrence of the I region and consequently the degree of radial direction dispersion of the density of oxygen precipitate will inevitably exceed 0.5.
  • the concentration of carbon plus nitrogen is set at a level of not less than 1 ⁇ 10 16 atoms/cm 3 and, as a crystal growth condition, the cooling speed at between 1100 and 1000°C is set at a level of not lower than 4°C/minute for the purpose of enabling the range of the nitrogen concentration and the range of V/G to be set so that the entire surface of the base plate will become an OSF region when the nitrogen- doped crystal with no carbon is pulled and, on top thereof, limiting N-SF below 0.05 piece/cm 2 and E-pit below 0.05 piece/cm 2 .
  • the carbon concentration falls short of 1 x 10 16 atoms/cm 3 or the cooling speed at between 1100 and 1000°C as a crystal growth condition falls short of 4°C/min, the N-SF will exceed 0.05 piece/cm 2 or the E-pit will exceed 0.05 piece/cm 2 . If the carbon concentration exceeds 1 ⁇ 10 18 atoms/cm 3 , the single crystal growth will become difficult because of an addition to the trend toward formation of a polycrystal. Thus, the carbon concentration had better be not more than 1 x 10 18 atoms/cm 3 .
  • the effort to ensure absence of a region in which the density of voids measuring not less than 50 nm and not more than 150 nm falls in the range of 10 4 - 2 ⁇ 10 5 /cm 3 is necessary for the purpose of enabling the density of oxygen precipitate formed subsequent to a heat treatment to become uniform in the radial direction part of a silicon semiconductor base plate and consequently limiting the radial distribution variation of the density of oxygen precipitate below 0.5.
  • the density of oxygen precipitate of an epitaxial wafer will fall short of 1 x 10 9 pieces/cm 3 and consequently the gettering ability sufficient for heavy metals will not be obtained. If the concentration of nitrogen exceeds 5 x 10 15 atoms/cm 3 , the density of oxygen precipitate will increase excessively and consequently the device process will become liable to give rise to a slip dislocation. Thus, the density of nitrogen had better be not more than 5 ⁇ 10 15 atoms/cm 3 .
  • the method of production contemplated by this invention enables a silicon semiconductor base plate of high quality to be stably supplied without entailing an appreciable increase of cost because it allows the conventional device for the production of silicon single crystal using the CZ method to be utilized in its unmodified form and does not need to go through a complicated process of production.
  • this invention is capable of providing an epitaxial wafer that neither forms an epi-layer defect nor reveals ununiform oxygen precipitation but excels in device property.
  • This epitaxial wafer is an optimal base plate for the manufacture of a MOS device that is required to possess a high degree of integration and exhibit high reliability.
  • the density of oxygen precipitate in an epitaxial wafer using a nitrogen-doped substrate depends on the concentration of nitrogen in such a way that the density of oxygen precipitate increases in accordance as the concentration of nitrogen increases. This is because the doping of nitrogen results in forming a stable oxygen precipitate nucleus even at a high temperature in a substrate and this nucleus survives extinction during the epitaxial growth.
  • the epitaxial wafer having an oxygen precipitate nucleus survive in a substrate is caused, when subjected to a heat treatment in the subsequent device process, to form an oxygen precipitate.
  • the number of oxygen precipitate nuclei stable even at a high temperature depends on the concentration of nitrogen. Thus, the density of oxygen precipitate increases in accordance as the concentration of nitrogen increases.
  • the gettering ability for such heavy metals as Fe, Ni, and Cu can be secured even in a heat treatment of the low-temperature device process whose highest temperature is not higher than 1100°C.
  • FIG. 5 is a graph showing the relation between nitrogen concentration and V/G, providing that the growth condition regions 1 - 4 in the graph are the same regions as in FIG. 4 .
  • FIG. 5 (a) is a graph showing the relation between nitrogen concentration and V/G, providing that the growth condition regions 1 - 4 in the graph are the same regions as in FIG. 4 .
  • FIG. 5 (b) is a diagram showing the defect distribution in the radial direction part of a base plate, the existence of an epi-layer defect (o denoting absence of defect and ⁇ denoting presence of defect(the same applies to the following drawings)), whether the density of oxygen precipitate exceeds 10 9 /cm 3 or not (o denoting a density falling short of 10 9 /cm 3 and ⁇ denoting a density exceeding 10 9 /cm 3 (the same applies to the following drawings)), and whether the radial direction dispersion of the density of oxygen precipitate is not more than 0.5 or not (o denoting a dispersion falling short of 0.5 and x denoting a dispersion exceeding 0.5 (the same applies to the following drawings)).
  • FIG. 6 is a graph for explaining the radial direction distribution of voids and the radial direction distribution of oxygen precipitate; (a) is a graph showing the relation of nitrogen concentration and V/G and (b) is a graph showing the results of the measurement of densities of voids 50 - 150 nm in size in the direction of a radius of a base plate found severally in the regions A, B, and C shown in (a).
  • the A region has a nitrogen concentration of 5 x 10 13 atoms/cm 3 and a V/G (relative value) of 1.1 ⁇ 2.0
  • the B region has a nitrogen concentration of 5 x 10 14 atoms/cm 3 and a V/G (relative value) of 1.1 ⁇ 2.0
  • the C region has a nitrogen concentration of 5 x 10 15 atoms/cm 3 and a V/G (relative value) of 1.1 ⁇ 2.0.
  • the precipitation valley region has been found to be the region in a substrate wherein voids measuring 50 - 150 nm in size are present at densities in the range of 10 4 ⁇ 2 ⁇ 10 5 /cm 3 .
  • the void sizes are expressed by diameters of spheres possessing equal volumes as average volumes of the relevant voids.
  • the inner side from the precipitate valley region is a region in which the largest value of void size exceeds 150 nm or the density of voids measuring 50 - 150 nm in size exceeds 2 ⁇ 10 5 /cm 3 .
  • the outer side from the precipitate valley region is a region in which the void size is not more than 50 nm or the density of voids falls short of 10 4 /cm 3 .
  • the densities of oxygen precipitate are larger than in the precipitate valley region.
  • the region in which the voids measuring 50 ⁇ 150 nm are present at a density in the range of 10 4 ⁇ 2 x 10 5 /cm 3 is caused by some other mechanism to assume a state having the residual holes in the smallest density.
  • the doping of carbon has only a small influence on the distribution of V region and I region in the substrate and the two-dimensional fault region map using nitrogen concentration and V/G as two axes is nearly the same as in the case of the sole doping of nitrogen.
  • the same precipitate valley region as shown in FIG. 5 is present just the same notwithstanding that N-SF and E-pit cease to exist.
  • FIG. 7 is an explanatory drawing for explaining the relation among the defect region of a crystal with nitrogen and carbon simultaneously doped produced under the condition of low V/G, the epi-layer defect, and the in-plane distribution of oxygen precipitate;
  • (a) is a graph showing the relation between nitrogen concentration and V/G and
  • (b) is a diagram showing the defect distribution in the radial direction part of a base plate, the presence of an epi-layer defect, whether the density of oxygen precipitate is not less than 10 9 /cm 3 or not, and whether the radial direction dispersion of the density of oxygen precipitate is not more than 0.5 or not.
  • the nitrogen concentration is 1 ⁇ 10 15 ⁇ 5 ⁇ 10 15 atoms/cm 3 and the V/G (relative value) is 0.7 ⁇ 1.2.
  • the nitrogen- doped base plate grown in the growth condition region 5 is a substrate having the whole surface formed of an OSF region and having the aforementioned precipitate valley region excluded. Since the I region having a small density of oxygen precipitate is also excluded, the oxygen precipitate is homogenized in the radial direction part of a base plate. Further, as the nitrogen concentration is not less than 5 x 10 14 atoms/cm 3 , it follows that the density of oxygen precipitate is 1 x 10 9 pieces/cm 3 .
  • the epitaxial wafer using as a substrate a base plate with nitrogen and carbon doped simultaneously grown in the growth condition region 5 of FIG. 7 inevitably forms an epi-layer defect even when carbon is doped in an amount of not less than 1 ⁇ 10 16 atoms/cm 3 .
  • FIG. 8 is an explanatory drawing for explaining the conditions for producing an epitaxial wafer giving uniform oxygen precipitate;
  • (a) is a graph showing the relation between nitrogen concentration and V/G and
  • (b) is a diagram showing the distribution of faults in the radial direction part of a base plate, the existence of an epi-layer defect, whether the density of oxygen precipitate is 10 9 /cm 3 or not, and whether the radial direction dispersion of the density of oxygen precipitate is not more than 0.5 or not.
  • the term "NF region" appearing in FIG. 8 refers to a fault region newly discovered between the boundary of the V region and the boundary of the OSF region. This region is not found till the crystal cooling speed between 1100 and 1000°C during the growth of crystal exceeds 4°C/minute and does not allow presence of OSF or void.
  • the growth conditions answering this description are such conditions that nitrogen concentration and V/G fall in the ranges belonging in the growth condition region 5 (the same as the growth condition region 5 of FIG. 7 ) and the crystal cooling speed between 1100 and 1000°C during the growth of crystal exceeds 4°C/minute.
  • the epitaxial wafer using as a substrate a nitrogen plus carbon-doped base plate having a carbon concentration of not less than 1 x 10 16 atoms/cm 3 has the radial distribution variation of the density of oxygen precipitate restrained below 0.5 and the concentrations of such epi-layer defects as N-SF and E-pit suppressed below 0.05 piece/cm 2 .
  • the crystal cooling speed is calculated as V ⁇ G from the average temperature gradient [°C/mm] in the direction of the axis of crystal growth and the crystal pulling speed V [mm/min].
  • the fault that originates N-SF or E-pit is presumed to be a crystal fault existing in the OSF region of a base plate.
  • the fault originating the occurrence of N-SF is a minute void and the origin of the occurrence of E-pit is a dislocation loop derived from oxygen precipitate.
  • these faults originating occurrence are formed in a temperature zone of 1100 - 1000°C during the growth of crystal. It is surmised that when the temperature zone of 1100 - 1000°C during the growth of crystal is suddenly cooled, the cooling coupled with the effect of carbon enables prevention of the occurrence of N-SF or E-pit because the formation of the original defect of N-SF or E-pit is suppressed
  • the range of V/G in which the radial direction dispersion level of the density of oxygen precipitate falls below 0.5 is between the lower side boundary of the precipitate valley region and the boundary of the I region as shown in FIG. 8 .
  • the range of V/G mentioned above is expressed as a function of the nitrogen concentration.
  • V/G [mm 2 /°Cmin] the upper limit of the value of V/G [mm 2 /°Cmin] is 1.4 exp(6.2 x 10 -16 x nitrogen concentration [atoms/cm 3 ]) x (V/G) crit and the lower limit of the value of V/G [mm 2 /°Cmin] is exp(-7.1 x 10 -16 x nitrogen concentration [atoms/cm 3 ]) x (V/G) crit (providing that the term (V/G) crit denotes the V/G value of the part corresponding to the boundary between the V region and the I region in silicon single crystal with no nitrogen doped).
  • the radial direction distribution of oxygen precipitate is uniform because they do not include the precipitate valley region notwithstanding part of crystal deviating from the OSF region. It may be safely concluded that the radial direction distribution of oxygen precipitate has no bearing on the distribution of the OSF region.
  • the growth condition region 6 has nitrogen concentration of 5 ⁇ 10 14 ⁇ 2 x 10 15 atoms/cm 3 and V/G (relative value) of 1.1 ⁇ 1.8
  • the growth condition region 7 has nitrogen concentration of 1 ⁇ 10 15 ⁇ 5 ⁇ 10 15 atoms/cm 3 and V/G (relative value) of 1.1 - 1.8
  • Patent Document 5 JP-A 2000-331933
  • Patent Document 6 JP-A 2003-218120
  • the crystal cooling speed in the temperature zone of 1100 ⁇ 1000°C during the crystal growth by the CZ method leads to shifting the precipitate valley region as shown in FIG. 8 .
  • the cause for this shift may be surmised as follows.
  • the supersaturated atom holes drawn in through the solid-liquid interface during the crystal growth are coagulated and converted into voids in the neighborhood of 1100°C.
  • the voids assume a small size because the time allowing coagulation of atom holes is not sufficient.
  • the region in which the voids 50 - 150 nm in size are present at a density in the range of 10 4 ⁇ 2 x 10 5 /cm 3 as shown in the nitrogen concentration V/G map is shifted.
  • the CZ method that consists in pulling a crystal from a melt in a crucible while growing the pulled crystal has been in great vogue.
  • first silicon poly crystal is placed as a raw material in a crucible made of quartz and this raw material is melted with a heater encircling them (the heater and the inner components such as a heat insulating member will be collectively referred to as "hot zone").
  • a seed crystal is lowered from above the melt in the crucible and brought into contact with the surface of the melt.
  • the seed crystal is pulled upwardly while it is kept in rotation and the pulling speed V thereof is controlled, it is manufactured into a single crystal of a prescribed diameter.
  • the temperature gradient G of the phase boundary of the crystal growth is generally not uniform in the radial direction part of crystal.
  • the crystal side temperature gradient in the phase boundary of the growth of crystal is larger in the outer peripheral part of crystal than in the central part of crystal. This is because the lateral face of crystal is cooled more by the radiation cooling at the lateral face of crystal. For this reason, the V/G is lower in the outer peripheral part of crystal even at the same pulling speed V and the OSF region forming the origin of the occurrence of an epi-layer defect is liable to occur in the outer peripheral part of crystal.
  • the crystal side temperature gradient G in the direction of pulling the crystal on the phase boundary of the crystal growth has been rigorously determined by repeating such an experiment as actually implementing crystal growth with a thermocouple inserted into the crystal.
  • the V/G of the phase boundary of crystal growth and the crystal cooling speed between 1100 and 1000°C during the crystal growth can be controlled by varying severally the value of G in the solid-liquid interface and the value of G in the temperature zone of 1100 ⁇ 1000°C. For the purpose of controlling these two G values independently, the structure of the pulling oven must be changed.
  • the pulling speed must be lowered in order to lower the value of VG. This decrease of the pulling speed inevitably results in lowering the crystal cooling speed between 1100 and 1000°C during the crystal growth.
  • a special measure as enhancing the cooling ability of a thermal shield plate so disposed as to encircle the crystal, for example, is required.
  • a method of introducing nitrogen gas into the raw material in process of dissolution and a method of causing a silicon base plate having a nitride deposited thereon by the CVD technique to be included in the raw material in process of dissolution, for example, are available.
  • a method of causing carbon powder to be included in the raw material in process of dissolution, for example, is available.
  • the segregation coefficient k i.e. the ratio of the impurity drawn into the crystal subsequent to solidification to the concentration in the melt, is 7 x 10 -4 in the case of nitrogen and 0.06 in the case of carbon ( W. Zulehner and D. Huber, Crystal Growth, Properties and Applications, p. 28, Springer-Verlag, New York, 1982 ).
  • the concentration of nitrogen in the crystal can be controlled nearly uniquely by the concentration of nitrogen in the initial melt.
  • the segregation coefficients k of nitrogen and carbon do not mutually influence even when nitrogen and carbon are simultaneously doped.
  • the concentration of nitrogen and the concentration of carbon can be controlled by utilizing the coefficients mentioned above.
  • the crucible uses quartz as its raw material. Since this quartz crucible melts little by little into the silicon melt, oxygen is present in the silicon melt. The oxygen dissolving out of the quartz crucible is migrated by the flow and the diffusion of the silicon melt and is mostly vaporized as SiO gas from the surface of the melt. Part of the oxygen is drawn into the crystal. The oxygen drawn in at a high temperature is supersaturated while the crystal is cooled, subjected to aggregation, and caused to form minute oxygen clusters while the crystal is cooling. These oxygen clusters serve as precipitate nuclei, which are precipitated as SiOx while the device manufactured from a silicon single crystal wafer is undergoing a heat treatment and are eventually made to form an oxygen precipitate.
  • the finished silicon single crystal (ingot) is manufactured into a substrate for use in an epitaxial wafer.
  • a base plate is produced by a process that comprises slicing the silicon single crystal by the use of a wire saw or an inner blade slicer, and subjecting each of the resultant slices to the steps of chamfering, etching, and mirror polishing.
  • this step of heat treatment is performed subsequent to the process mentioned above.
  • the substrate may be produced by the same process as is used for the ordinary silicon base plate without requiring this extra step.
  • An epitaxial layer is deposited on the surface of the substrate that has been finished as described above.
  • the process of epitaxial growth is implemented with a device for vapor phase growth.
  • the substrate is heated in an atmosphere of hydrogen gas to a prescribed temperature range (commonly in the range of 900 - 1200°C) prior to the vapor phase growth, subsequently etched as with a gas containing hydrogen chloride for several minutes, subjected to removal of surface contamination and activation of base plate surface, and thereafter enabled to grow on the surface thereof an epitaxial thin film using a silane-based gas.
  • the epi-film thickness is not particularly specified, it is generally preferred to exceed 0.5 ⁇ m in view of the controllability of the film thickness. If the epi-film thickness falls short of 0.5 ⁇ m, the accomplishment of uniform radial direction film thickness will be rendered difficult.
  • the epi-film thickness preferred to be not more than 20 ⁇ m in view of the throughput. If the epi-film thickness exceeds 20 ⁇ m, the excess will cause the process of epi-deposition to necessitate not less than 30 minutes at a sacrifice of productivity and will prove impractical.
  • the heating is made by the use of a lamp so as to shorten the process time as much as possible and restrain the time required for raising and lowering the temperature to about several minutes.
  • the epitaxial wafer subsequent to the epi-deposition becomes incapable of inducing oxygen precipitation even during the course of the heat treatment required as the device.
  • the oxygen precipitate nuclei formed in the nitrogen-doped base plate that is fated to be used as a substrate have been thermally stabilized by the effect of nitrogen and, therefore, never cease to exist during the rapid temperature increase in the process of epi-deposition.
  • the extra process of heat treatment aimed at promoting oxygen precipitation or eliminating a fault may be optionally performed in this process of epi-deposition.
  • the heat treatment is carried out at a prescribed temperature for a prescribed time before or after the etching by the use of a gas containing hydrogen chloride and, subsequently, the step of growing an epitaxial thin film on the surface of a substrate by the use of a silane-based gas is initiated.
  • the base plate having added nitrogen and carbon as contemplated by this invention has no use for this step and is only required to use the same epi-deposition condition as the ordinary base plate.
  • the device for producing silicon single crystal is adapted to produce the silicon single crystal by the ordinary CZ method, and consists of the first pulling oven furnished with a pulling speed in common use and the second pulling oven adapted to cool by a special method a thermal shield plate for the purpose of heightening the cooling speed at between 1100 and 1000°C.
  • these pulling ovens do not need to be particularly limited to the examples herein but were only required to be capable of fulfilling the conditions of growth contemplated by this invention.
  • the silicon single crystal grown by the use of this device had the p type (boron-doped) of conduction and measured 8 inches (200 mm) in diameter.
  • the addition of nitrogen was implemented by causing a base plate having a nitride film adhering thereto to be thrown into a silicon melt.
  • the addition of carbon was accomplished by throwing carbon powder into the silicon melt.
  • the relative V/G value was defined as follows.
  • a silicon single crystal ingot having neither nitrogen nor carbon doped was pulled at a varying pulling speed V and tested for in-plane distribution of dislocation pits by the method which will be specifically described herein below to determine the position of boundary of the I region.
  • the pulling speed was lowered, for example, the wafer edge side became the I region and produced dislocation pits.
  • the relevant wafer was tested for the in-plane distribution of dislocation pits and the position at which the density of dislocation pits was lower than 10 pieces/cm 2 was designated the boundary of the I region.
  • the relative V/G value of a nitrogen-doped crystal pulled in the pulling oven of the same construction was determined as (V/G) / (V/G) crit, the V/G value at that position is designated as (V/G) crit, and, to be specific, V/G equals (V/G) cris when the value of relative V/G is 1.
  • Samples of a crystal having no nitrogen doped were pulled in the first pulling oven and the second pulling over to find the values of relative V/G and prepare a nitrogen concentration-V/G map.
  • V x G2 As regards the cooling speed between 1100 and 1000°C during the growth of crystal, the value of V x G2, wherein G2 denotes the smallest of the values [°C/mm] of temperature gradient in the range of 1100 - 1000°C in the direction of the axis of crystal growth, was computed and presented as the representative value.
  • Epitaxial wafers were prepared by excising a plurality of base plates (silicon wafers) from one same portion of the single crystal, mirror polishing the base plates to obtain substrates, and having a silicon single crystal layer (epi-layer) deposited severally on the substrates by the epitaxial method.
  • the epi-layer manifested a specific resistance of 8 - 12 ⁇ cm and measured 5 ⁇ m in film thickness.
  • the specific resistance was measured by the four point probe method.
  • the nitrogen concentration was determined by extracting a sample from the epitaxial wafer subsequent to the epi-layer deposition, subjecting the sample to a 20 ⁇ m polish with the object of stripping the epi-layer of the surface, and examining the sample with a secondary ion mass analyzer (SIMS).
  • SIMS secondary ion mass analyzer
  • the carbon concentration was determined by examining the epitaxial wafer resulting from the epi-layer deposition by the infrared absorption method (FTIR) and calculated by using the concentration conversion coefficient adopted by Japanese Electronic Industry Development Association.
  • the carbon concentration of a base plate manifesting such a low specific resistance as defies use of the FTIR was determined by using the SIMS.
  • the V region of the substrate yields voids in consequence of excess atomic vacancies being introduced thereto from the solid-liquid interface during the growth of crystal.
  • the V region of the substrate could be specifically defined by the density of these voids.
  • the voids in the substrate were examined by determining the radial direction distribution of voids in a base plate by the use of an LSTD scanner (made by Mitsui Mining And Smelting Company, Limited and sold under the product code of MO-6), which is a commercially available device for the evaluation of fault.
  • This MO-6 emitted a visible light laser at a Brewster's angle and detected a scattered image of p polarization as a defect image with a camera disposed in the vertical direction. Since the laser permeated the base plate only to a depth of 5 ⁇ m from the surface, the device can only evaluate the defects existing in the base plate within a depth of 5 ⁇ m from the surface.
  • the detection sensitivity was so adjusted that voids measuring not less than 50 nm in size as reduced to sphere could be covered by the measurement.
  • the volume density of the voids was calculated from the area density of the voids covered by the measurement and the depth of measurement of 5 ⁇ m.
  • the region in which the volume density of voids was not less than 1 x 10 5 /cm 3 was designated V region.
  • the I region of the substrate assumed dislocation pits in consequence of the introduction of excess interstitial atoms through the solid-liquid interface during the growth of crystal.
  • the I region could be defined as the density of these dislocation pits.
  • the substrate was surveyed to determine dislocation pits occurring therein by the following method. First, the substrate was etched to a depth of 5 ⁇ m with a light etching liquid. The dislocation pits measuring not less than 1 ⁇ m in size and occurring on the etched surface in a rhombic shape or streamline shape were counted by observation with an optical microscope. The area density of the dislocation pits was calculated from the area of visual field that was obtained by measuring the dislocation pits at pitches of 10 mm in the direction of radius of the base plate. The region in which the density of dislocation pits was not less than 10 pieces/cm 2 was designated the I region.
  • the evaluation of the substrate in OSF was carried out by the following method. First, the substrate was subjected to an oxidation treatment at 1100°C for one hour in an atmosphere of steam-containing oxygen. Subsequently, it was stripped of an oxide film with hydrofluoric acid and then etched to a depth equivalent to the thickness of an epi-layer with a light etching liquid. The OSF pits formed on the etched surface in an elliptic shape, a crescent shape, or a bar shape were observed with an optical microscope.
  • the area density of OSF [pieces/cm 2 ] was determined by scanning the substrate in the direction of diameter of the base plate in a visual field 2.5 mm in diameter with an optical microscope thereby counting OSF pits and dividing the number of OSF pits by the area of observation.
  • the N-SF of the epitaxial wafer subsequent to the epi-deposition was evaluated by the following procedure.
  • the epitaxial wafer in the unmodified form was tested for the number and the distribution of foreign particles by using a surface contamination meter made by Tencor Corp. and sold under the product code of "SP1" in the mode of rating foreign particles not less than 0.11 ⁇ m in size.
  • the epitaxial wafer was subjected to the SCl cleaning for removal of foreign particles and again tested for foreign particles with the surface contamination meter.
  • the foreign particles surviving the cleaning were designated the N-SF and these foreign particles in the in-plane part of the base plate were counted.
  • the area density was calculated by dividing the number of N-SF consequently found by the area of measurement.
  • the E-pit in the epitaxial wafer subsequent to the epi-deposition was evaluated by the following procedure. The evaluation was carried out by etching the epitaxial wafer to a depth equivalent to the thickness of epi-layer with a light etching liquid and counting the pits not less than 1 ⁇ m in size produced on the etched surface in a rhombic shape or a streamline shape by the observation with an optical microscope.
  • the observation regions in a shape of the square of 1 cm were spread all over without a gap in the direction of a diameter of the base plate, the elliptic pits existing therein were counted, the area density in each of the square regions was calculated, and the largest of the values of area densities of elliptic pits in the radial direction part was obtained.
  • Gate oxide integrity on the epitaxial wafer subsequent to the epi-deposition was evaluated by the following procedure.
  • Numerous poly silicon-MOS capacitors having an electrode surface area of 20 mm 2 were formed on the epitaxial wafer.
  • the gate oxide film had a thickness of 25 nm.
  • An electric field was applied to the MOS capacitors.
  • the number of MOS capacitors in which the average electric field applied to the gate oxide film when the control current was 1 x 10 -6 A/cm 2 exceeded 11 MV/cm 2 was found and the ratio of this number was designated as the success rate of the pressure-proof property of oxide film.
  • the epi-layer was found to excel in quality.
  • the oxygen precipitates showed the minimum values of the density of oxygen precipitate of not less than 1 x 10 9 pieces/cm 3 and the radial distribution variation of the density of oxygen precipitate of not more than 0.5, indicating that these oxygen precipitates were excellent also in quality.
  • An examination of the in-plane distribution of voids in the base plates of the epitaxial wafers so satisfactory in the in-plane distribution of oxygen precipitate as described above showed that a region in which the density of voids 50 - 150 nm in size was in the range of 10 4 ⁇ 2 ⁇ 10 5 /cm 3 was not present in the base plates.
  • the base plates satisfying the conditions i.e. nitrogen concentration of not less than 5 ⁇ 10 14 atoms/cm 3 , carbon concentration of not less than 1 ⁇ 10 16 atoms/cm 3 , and range of .relative V/G of not less than exp (-7.1 ⁇ 10 -16 x nitrogen concentration [atoms/cm 3 ]) and not more than 1.4 exp (6.2 x 10 -16 ⁇ nitrogen concentration [atoms/cm 3 ]), but revealing a cooling speed falling short of 4°C/minute between 1100 and 1000°C inevitably produced N-SF exceeding 0.05 piece/cm 2 and E-pit exceeding 0.05 piece/cm 2 and revealed the success rate of the pressure-proof property of oxide film falling short of 95%, indicating that the epi-layers were inferior in quality to the samples of the examples.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
EP07000457.7A 2006-01-12 2007-01-10 Method for production of epitaxial wafer Active EP1811066B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006005237A JP4805681B2 (ja) 2006-01-12 2006-01-12 エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法

Publications (3)

Publication Number Publication Date
EP1811066A2 EP1811066A2 (en) 2007-07-25
EP1811066A3 EP1811066A3 (en) 2010-07-28
EP1811066B1 true EP1811066B1 (en) 2013-04-17

Family

ID=37909439

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07000457.7A Active EP1811066B1 (en) 2006-01-12 2007-01-10 Method for production of epitaxial wafer

Country Status (7)

Country Link
US (1) US7875115B2 (ja)
EP (1) EP1811066B1 (ja)
JP (1) JP4805681B2 (ja)
KR (1) KR100871626B1 (ja)
CN (1) CN101024895B (ja)
SG (1) SG134246A1 (ja)
TW (1) TWI340182B (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
JP4805681B2 (ja) * 2006-01-12 2011-11-02 ジルトロニック アクチエンゲゼルシャフト エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
DE102008046617B4 (de) * 2008-09-10 2016-02-04 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung
WO2010109873A1 (ja) 2009-03-25 2010-09-30 株式会社Sumco シリコンウェーハおよびその製造方法
JP5544859B2 (ja) * 2009-12-15 2014-07-09 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US8455756B2 (en) * 2010-02-19 2013-06-04 Translucent, Inc. High efficiency solar cell using IIIB material transition layers
DE102010040860A1 (de) * 2010-09-16 2012-03-22 Otto-Von-Guericke-Universität Magdeburg Schichtsystem aus einem siliziumbasierten Träger und einer direkt auf dem Träger aufgebrachten Heterostruktur
JP2012142455A (ja) * 2010-12-29 2012-07-26 Siltronic Ag アニールウエハの製造方法
JP5606976B2 (ja) * 2011-03-25 2014-10-15 三菱マテリアル株式会社 シリコンインゴット製造装置、シリコンインゴットの製造方法
KR101303422B1 (ko) * 2011-03-28 2013-09-05 주식회사 엘지실트론 단결정 잉곳의 제조방법 및 이에 의해 제조된 단결정 잉곳과 웨이퍼
JP5440564B2 (ja) * 2011-07-14 2014-03-12 信越半導体株式会社 結晶欠陥の検出方法
JP5580376B2 (ja) * 2012-08-27 2014-08-27 株式会社三共 遊技機
CN103094316B (zh) * 2013-01-25 2016-01-20 浙江大学 一种具有高金属吸杂能力的n/n+硅外延片及其制备方法
JP6020342B2 (ja) * 2013-05-10 2016-11-02 信越半導体株式会社 シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法
JP6224703B2 (ja) * 2013-05-30 2017-11-01 京セラ株式会社 シリコンインゴットの製造方法およびシリコンインゴット
JP5811218B2 (ja) * 2014-03-18 2015-11-11 株式会社Sumco シリコンエピタキシャルウェーハの製造方法
JP6447351B2 (ja) * 2015-05-08 2019-01-09 株式会社Sumco シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ
JP6950639B2 (ja) * 2018-07-20 2021-10-13 株式会社Sumco シリコン単結晶の炭素濃度測定方法及び装置
CN109827891A (zh) * 2019-02-01 2019-05-31 天津中环领先材料技术有限公司 一种基于sp1颗粒测试仪的cop检测方法
CN113703411B (zh) * 2021-08-31 2022-08-30 亚洲硅业(青海)股份有限公司 多晶硅生长过程监测系统、方法及多晶硅生产系统

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444246A (en) * 1992-09-30 1995-08-22 Shin-Etsu Handotai Co., Ltd. Determining carbon concentration in silicon single crystal by FT-IR
US6277501B1 (en) * 1996-07-29 2001-08-21 Sumitomo Metal Industries, Ltd. Silicon epitaxial wafer and method for manufacturing the same
JPH1050715A (ja) 1996-07-29 1998-02-20 Sumitomo Sitix Corp シリコンウェーハとその製造方法
DE19637182A1 (de) * 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
US6042646A (en) * 1997-01-29 2000-03-28 Komatsu Electric Metals Co., Ltd. Simple method for detecting temperature distributions in single crystals and method for manufacturing silicon single crystals by employing the simple method
JPH10242153A (ja) * 1997-02-26 1998-09-11 Hitachi Ltd 半導体ウエハ、半導体ウエハの製造方法、半導体装置および半導体装置の製造方法
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
US6514335B1 (en) * 1997-08-26 2003-02-04 Sumitomo Metal Industries, Ltd. High-quality silicon single crystal and method of producing the same
TW589415B (en) * 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
JP2885240B1 (ja) * 1998-03-16 1999-04-19 日本電気株式会社 半導体結晶育成装置および育成方法
WO1999057344A1 (fr) * 1998-05-01 1999-11-11 Nippon Steel Corporation Plaquette de semi-conducteur en silicium et son procede de fabrication
US6478883B1 (en) * 1998-08-31 2002-11-12 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
JP3988307B2 (ja) * 1999-03-26 2007-10-10 株式会社Ｓｕｍｃｏ シリコン単結晶、シリコンウェーハ及びエピタキシャルウェーハ
JP3903643B2 (ja) 1999-05-19 2007-04-11 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
US20020142170A1 (en) * 1999-07-28 2002-10-03 Sumitomo Metal Industries, Ltd. Silicon single crystal, silicon wafer, and epitaxial wafer
JP3589119B2 (ja) 1999-10-07 2004-11-17 三菱住友シリコン株式会社 エピタキシャルウェーハの製造方法
JP2001199794A (ja) * 2000-01-17 2001-07-24 Toshiba Ceramics Co Ltd シリコン単結晶インゴット、その製造方法およびシリコンウェーハの製造方法
US6517632B2 (en) * 2000-01-17 2003-02-11 Toshiba Ceramics Co., Ltd. Method of fabricating a single crystal ingot and method of fabricating a silicon wafer
JP4080657B2 (ja) * 2000-01-18 2008-04-23 コバレントマテリアル株式会社 シリコン単結晶インゴットの製造方法
EP1195455B1 (en) * 2000-01-25 2011-04-13 Shin-Etsu Handotai Co., Ltd. Method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer
JP3846627B2 (ja) * 2000-04-14 2006-11-15 信越半導体株式会社 シリコンウエーハ、シリコンエピタキシャルウエーハ、アニールウエーハならびにこれらの製造方法
JP4718668B2 (ja) * 2000-06-26 2011-07-06 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP2002064102A (ja) * 2000-08-15 2002-02-28 Wacker Nsce Corp シリコン単結晶基板並びにエピタキシャルシリコンウエハおよびその製造方法
JP4615785B2 (ja) * 2000-09-01 2011-01-19 シルトロニック・ジャパン株式会社 窒素添加基板を用いたエピ層欠陥のないエピタキシャルウエハの製造方法
JP2002201091A (ja) * 2000-09-01 2002-07-16 Wacker Nsce Corp 窒素および炭素添加基板を用いたエピ層欠陥のないエピウエハの製造方法
DE10047346B4 (de) * 2000-09-25 2007-07-12 Mitsubishi Materials Silicon Corp. Verfahren zur Herstellung eines Siliciumwafers zur Abscheidung einer Epitaxieschicht und Epitaxiewafer
JP3994665B2 (ja) * 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
US6986925B2 (en) * 2001-01-02 2006-01-17 Memc Electronic Materials, Inc. Single crystal silicon having improved gate oxide integrity
JP4126879B2 (ja) * 2001-02-19 2008-07-30 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP2003059932A (ja) * 2001-08-08 2003-02-28 Toshiba Ceramics Co Ltd シリコン単結晶ウエハの製造方法およびシリコン単結晶ウエハ
US6673147B2 (en) * 2001-12-06 2004-01-06 Seh America, Inc. High resistivity silicon wafer having electrically inactive dopant and method of producing same
JP4465141B2 (ja) 2002-01-25 2010-05-19 信越半導体株式会社 シリコンエピタキシャルウェーハ及びその製造方法
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
JP4570317B2 (ja) * 2002-08-29 2010-10-27 株式会社Ｓｕｍｃｏ シリコン単結晶とエピタキシャルウェーハ並びにそれらの製造方法
JP4699675B2 (ja) * 2002-10-08 2011-06-15 信越半導体株式会社 アニールウェーハの製造方法
DE10250822B4 (de) * 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
TWI265217B (en) * 2002-11-14 2006-11-01 Komatsu Denshi Kinzoku Kk Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal
JPWO2004083496A1 (ja) * 2003-02-25 2006-06-22 株式会社Sumco シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法
JP4854917B2 (ja) * 2003-03-18 2012-01-18 信越半導体株式会社 Ｓｏｉウェーハ及びその製造方法
US7014704B2 (en) * 2003-06-06 2006-03-21 Sumitomo Mitsubishi Silicon Corporation Method for growing silicon single crystal
JP4507690B2 (ja) * 2004-05-10 2010-07-21 信越半導体株式会社 シリコン単結晶の製造方法及びシリコン単結晶
US7700394B2 (en) * 2004-06-30 2010-04-20 Sumco Corporation Method for manufacturing silicon wafer method
JP4604889B2 (ja) * 2005-05-25 2011-01-05 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法、並びにシリコン単結晶育成方法
KR100654354B1 (ko) * 2005-07-25 2006-12-08 삼성전자주식회사 게더링 기능을 가지는 저결함 에피택셜 반도체 기판, 이를이용한 이미지 센서 및 이의 제조 방법
JP4983161B2 (ja) * 2005-10-24 2012-07-25 株式会社Ｓｕｍｃｏ シリコン半導体基板およびその製造方法
WO2007055187A1 (ja) * 2005-11-14 2007-05-18 Idemitsu Kosan Co., Ltd. 金属錯体化合物及びそれを用いた有機エレクトロルミネッセンス素子
JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
JP4805681B2 (ja) * 2006-01-12 2011-11-02 ジルトロニック アクチエンゲゼルシャフト エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
DE102007027111B4 (de) * 2006-10-04 2011-12-08 Siltronic Ag Siliciumscheibe mit guter intrinsischer Getterfähigkeit und Verfahren zu ihrer Herstellung
KR100827028B1 (ko) * 2006-10-17 2008-05-02 주식회사 실트론 쵸크랄스키법을 이용한 반도체 단결정 제조 방법, 및 이방법에 의해 제조된 반도체 단결정 잉곳 및 웨이퍼
JP4853237B2 (ja) * 2006-11-06 2012-01-11 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
US7438880B2 (en) * 2006-12-20 2008-10-21 Ppg Industries Ohio, Inc. Production of high purity ultrafine metal carbide particles
JP2008230958A (ja) * 2007-02-22 2008-10-02 Tokuyama Corp ＢａＬｉＦ３単結晶体の製造方法
JP5104437B2 (ja) * 2008-03-18 2012-12-19 株式会社Ｓｕｍｃｏ 炭素ドープ単結晶製造方法

Also Published As

Publication number Publication date
TWI340182B (en) 2011-04-11
CN101024895A (zh) 2007-08-29
EP1811066A2 (en) 2007-07-25
KR100871626B1 (ko) 2008-12-02
SG134246A1 (en) 2007-08-29
CN101024895B (zh) 2010-11-17
KR20070075349A (ko) 2007-07-18
TW200728523A (en) 2007-08-01
US20070178668A1 (en) 2007-08-02
JP2007186376A (ja) 2007-07-26
JP4805681B2 (ja) 2011-11-02
US7875115B2 (en) 2011-01-25
EP1811066A3 (en) 2010-07-28

Similar Documents

Publication Publication Date Title
EP1811066B1 (en) Method for production of epitaxial wafer
JP5121139B2 (ja) アニールウエハの製造方法
JP5072460B2 (ja) 半導体用シリコンウエハ、およびその製造方法
EP1887110B1 (en) Silicon single crystal manufacturing method and silicon wafer
EP0962557B1 (en) Silicon single crystal wafer and method for producing silicon single crystal wafer
US6641888B2 (en) Silicon single crystal, silicon wafer, and epitaxial wafer.
EP1928016A1 (en) Silicon wafer and method for manufacturing the same
JP4699675B2 (ja) アニールウェーハの製造方法
US20020142170A1 (en) Silicon single crystal, silicon wafer, and epitaxial wafer
EP1154048B1 (en) Method of manufacture of a silicon epitaxial wafer
US6365461B1 (en) Method of manufacturing epitaxial wafer
JP2001217251A (ja) シリコンウェーハの熱処理方法
JP2003243404A (ja) アニールウエーハの製造方法及びアニールウエーハ
US6709957B2 (en) Method of producing epitaxial wafers
JP4510997B2 (ja) シリコン半導体基板およびその製造方法
JP4615785B2 (ja) 窒素添加基板を用いたエピ層欠陥のないエピタキシャルウエハの製造方法
JP2002201091A (ja) 窒素および炭素添加基板を用いたエピ層欠陥のないエピウエハの製造方法
JP2001102385A (ja) 点欠陥の凝集体が存在しないシリコンウェーハ
JP2002064102A (ja) シリコン単結晶基板並びにエピタキシャルシリコンウエハおよびその製造方法
JPWO2009025339A1 (ja) Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP2010155748A (ja) アニ―ルウェハの製造方法
JP2002134513A (ja) シリコンウェーハの熱処理方法

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20070110

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK YU

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

17Q First examination report despatched

Effective date: 20101025

AKX Designation fees paid

Designated state(s): DE

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RIN1 Information on inventor provided before grant (corrected)

Inventor name: FUKUHARA, KOJI

Inventor name: NAKAI, KATSUHIKO, DR.

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602007029766

Country of ref document: DE

Effective date: 20130613

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20140120

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602007029766

Country of ref document: DE

Effective date: 20140120

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20240119

Year of fee payment: 18