EP1768171A4 - Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren - Google Patents
Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahrenInfo
- Publication number
- EP1768171A4 EP1768171A4 EP05748985A EP05748985A EP1768171A4 EP 1768171 A4 EP1768171 A4 EP 1768171A4 EP 05748985 A EP05748985 A EP 05748985A EP 05748985 A EP05748985 A EP 05748985A EP 1768171 A4 EP1768171 A4 EP 1768171A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- optical element
- exposure
- liquid
- substrate
- device producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16164839.9A EP3067750B1 (de) | 2004-06-10 | 2005-06-08 | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung |
EP16164837.3A EP3067749B1 (de) | 2004-06-10 | 2005-06-08 | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004172568 | 2004-06-10 | ||
PCT/JP2005/010484 WO2005122220A1 (ja) | 2004-06-10 | 2005-06-08 | 露光装置及び露光方法、並びにデバイス製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16164839.9A Division EP3067750B1 (de) | 2004-06-10 | 2005-06-08 | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung |
EP16164837.3A Division EP3067749B1 (de) | 2004-06-10 | 2005-06-08 | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1768171A1 EP1768171A1 (de) | 2007-03-28 |
EP1768171A4 true EP1768171A4 (de) | 2008-01-09 |
Family
ID=35503357
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16164839.9A Active EP3067750B1 (de) | 2004-06-10 | 2005-06-08 | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung |
EP16164837.3A Not-in-force EP3067749B1 (de) | 2004-06-10 | 2005-06-08 | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung |
EP05748985A Withdrawn EP1768171A4 (de) | 2004-06-10 | 2005-06-08 | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16164839.9A Active EP3067750B1 (de) | 2004-06-10 | 2005-06-08 | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung |
EP16164837.3A Not-in-force EP3067749B1 (de) | 2004-06-10 | 2005-06-08 | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung |
Country Status (10)
Country | Link |
---|---|
US (3) | US20080068567A1 (de) |
EP (3) | EP3067750B1 (de) |
JP (1) | JP5287948B2 (de) |
KR (7) | KR20170010906A (de) |
CN (2) | CN101685269B (de) |
HK (2) | HK1225811A1 (de) |
IL (1) | IL179936A0 (de) |
SG (1) | SG153820A1 (de) |
TW (4) | TWI598700B (de) |
WO (1) | WO2005122220A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1873816A4 (de) * | 2005-04-18 | 2010-11-24 | Nikon Corp | Belichtungseinrichtung, belichtungsverfahren und bauelemente-herstellungsverfahren |
US7812926B2 (en) | 2005-08-31 | 2010-10-12 | Nikon Corporation | Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice |
KR20080068013A (ko) * | 2005-11-14 | 2008-07-22 | 가부시키가이샤 니콘 | 액체 회수 부재, 노광 장치, 노광 방법, 및 디바이스 제조방법 |
US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
WO2007129753A1 (ja) * | 2006-05-10 | 2007-11-15 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US8004651B2 (en) | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8300207B2 (en) * | 2007-05-17 | 2012-10-30 | Nikon Corporation | Exposure apparatus, immersion system, exposing method, and device fabricating method |
JP2009054784A (ja) * | 2007-08-27 | 2009-03-12 | Canon Inc | 補助板およびそれを有する露光装置 |
CN101815969B (zh) | 2007-10-02 | 2013-07-17 | 卡尔蔡司Smt有限责任公司 | 用于微光刻的投射物镜 |
US8289497B2 (en) * | 2008-03-18 | 2012-10-16 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
US20110134400A1 (en) * | 2009-12-04 | 2011-06-09 | Nikon Corporation | Exposure apparatus, liquid immersion member, and device manufacturing method |
KR20210090189A (ko) * | 2018-11-16 | 2021-07-19 | 에이에스엠엘 네델란즈 비.브이. | Euv 리소그래피를 위한 펠리클 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD224448A1 (de) * | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
Family Cites Families (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JP2897355B2 (ja) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH065603A (ja) | 1992-06-17 | 1994-01-14 | Sony Corp | 半導体装置 |
JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5623853A (en) * | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5852490A (en) * | 1996-09-30 | 1998-12-22 | Nikon Corporation | Projection exposure method and apparatus |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
DE69738910D1 (de) * | 1996-11-28 | 2008-09-25 | Nikon Corp | Ausrichtvorrichtung und belichtungsverfahren |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
WO1999031462A1 (fr) | 1997-12-18 | 1999-06-24 | Nikon Corporation | Platine et appareil d'exposition |
US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
JPH11260686A (ja) * | 1998-03-11 | 1999-09-24 | Toshiba Corp | 露光方法 |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
TW490596B (en) * | 1999-03-08 | 2002-06-11 | Asm Lithography Bv | Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus |
WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
DE10011130A1 (de) | 2000-03-10 | 2001-09-13 | Mannesmann Vdo Ag | Entlüftungseinrichtung für einen Kraftstoffbehälter |
JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
JP4258958B2 (ja) * | 2000-07-10 | 2009-04-30 | コニカミノルタオプト株式会社 | 偏光位相変調素子の製造方法及び製造装置 |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US6478425B2 (en) * | 2000-12-29 | 2002-11-12 | Koninlijke Phillip Electronics N. V. | System and method for automatically adjusting a lens power through gaze tracking |
TW529172B (en) * | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
US6934003B2 (en) * | 2002-01-07 | 2005-08-23 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7362508B2 (en) * | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
CN1245668C (zh) * | 2002-10-14 | 2006-03-15 | 台湾积体电路制造股份有限公司 | 曝光系统及其曝光方法 |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121819A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1429188B1 (de) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographischer Projektionsapparat |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
TWI232357B (en) * | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101424881B (zh) * | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP2495613B1 (de) | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithografische Vorrichtung |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1420302A1 (de) * | 2002-11-18 | 2004-05-19 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
JP4184346B2 (ja) | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
DE60307322T2 (de) | 2002-12-19 | 2007-10-18 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
USRE48515E1 (en) | 2002-12-19 | 2021-04-13 | Asml Netherlands B.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
EP3301511A1 (de) * | 2003-02-26 | 2018-04-04 | Nikon Corporation | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung |
SG10201604762UA (en) | 2003-04-10 | 2016-08-30 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
KR101409565B1 (ko) | 2003-04-10 | 2014-06-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
WO2004092830A2 (en) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
DE10324477A1 (de) | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
WO2005006417A1 (ja) * | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP1646075B1 (de) * | 2003-07-09 | 2011-06-15 | Nikon Corporation | Belichtungsvorrichtung und verfahren zur bauelementeherstellung |
EP2278402B1 (de) | 2003-08-26 | 2013-03-06 | Nikon Corporation | Belichtungsvorrichtung |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
JP4288426B2 (ja) | 2003-09-03 | 2009-07-01 | 株式会社ニコン | 液浸リソグラフィのための流体の供給装置及び方法 |
JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP4444920B2 (ja) * | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
EP1670042A4 (de) | 2003-09-29 | 2008-01-30 | Nikon Corp | Linsensystem des flüssigkeits-immersionstyps und projektionsausrichtvorrichtung, bauelementeherstellverfahren |
US7369217B2 (en) * | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US8854602B2 (en) * | 2003-11-24 | 2014-10-07 | Asml Netherlands B.V. | Holding device for an optical element in an objective |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005191381A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
DE602004027162D1 (de) | 2004-01-05 | 2010-06-24 | Nippon Kogaku Kk | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
JP4319189B2 (ja) * | 2004-01-26 | 2009-08-26 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
JP4018647B2 (ja) * | 2004-02-09 | 2007-12-05 | キヤノン株式会社 | 投影露光装置およびデバイス製造方法 |
JP4510494B2 (ja) * | 2004-03-29 | 2010-07-21 | キヤノン株式会社 | 露光装置 |
US7271878B2 (en) * | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
CN1954408B (zh) * | 2004-06-04 | 2012-07-04 | 尼康股份有限公司 | 曝光装置、曝光方法及元件制造方法 |
US20070103661A1 (en) * | 2004-06-04 | 2007-05-10 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070222959A1 (en) * | 2004-06-10 | 2007-09-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP4515335B2 (ja) * | 2004-06-10 | 2010-07-28 | 株式会社ニコン | 露光装置、ノズル部材、及びデバイス製造方法 |
US7180572B2 (en) * | 2004-06-23 | 2007-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion optical projection system |
US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060046211A1 (en) * | 2004-08-27 | 2006-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Effectively water-free immersion lithography |
US7251013B2 (en) * | 2004-11-12 | 2007-07-31 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2005
- 2005-06-08 KR KR1020177001778A patent/KR20170010906A/ko active IP Right Grant
- 2005-06-08 KR KR1020157009089A patent/KR101700546B1/ko active IP Right Grant
- 2005-06-08 US US11/628,507 patent/US20080068567A1/en not_active Abandoned
- 2005-06-08 KR KR1020137028625A patent/KR101577515B1/ko active IP Right Grant
- 2005-06-08 KR KR1020127004814A patent/KR20120026639A/ko active IP Right Grant
- 2005-06-08 WO PCT/JP2005/010484 patent/WO2005122220A1/ja active Application Filing
- 2005-06-08 EP EP16164839.9A patent/EP3067750B1/de active Active
- 2005-06-08 CN CN2009102071284A patent/CN101685269B/zh not_active Expired - Fee Related
- 2005-06-08 SG SG200903982-7A patent/SG153820A1/en unknown
- 2005-06-08 KR KR1020067026607A patent/KR20070026603A/ko not_active Application Discontinuation
- 2005-06-08 KR KR1020147024616A patent/KR101639928B1/ko active IP Right Grant
- 2005-06-08 CN CNB2005800231607A patent/CN100570822C/zh not_active Expired - Fee Related
- 2005-06-08 EP EP16164837.3A patent/EP3067749B1/de not_active Not-in-force
- 2005-06-08 EP EP05748985A patent/EP1768171A4/de not_active Withdrawn
- 2005-06-08 KR KR1020137003364A patent/KR101505756B1/ko active IP Right Grant
- 2005-06-10 TW TW104131123A patent/TWI598700B/zh not_active IP Right Cessation
- 2005-06-10 TW TW102119739A patent/TWI516875B/zh not_active IP Right Cessation
- 2005-06-10 TW TW106113612A patent/TW201729012A/zh unknown
- 2005-06-10 TW TW094119275A patent/TWI412895B/zh not_active IP Right Cessation
-
2006
- 2006-12-10 IL IL179936A patent/IL179936A0/en unknown
-
2011
- 2011-07-26 JP JP2011163078A patent/JP5287948B2/ja not_active Expired - Fee Related
-
2013
- 2013-10-18 US US14/057,627 patent/US9411247B2/en not_active Expired - Fee Related
-
2016
- 2016-08-03 US US15/227,533 patent/US20160363870A1/en not_active Abandoned
- 2016-12-07 HK HK16113959A patent/HK1225811A1/zh not_active IP Right Cessation
- 2016-12-07 HK HK16113958A patent/HK1225810B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD224448A1 (de) * | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1768171A4 (de) | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren | |
TW200604758A (en) | Exposure apparatus, exposure method and method of manufacturing device | |
TW200632577A (en) | Exposure device and manufacturing method of device | |
US9507206B2 (en) | Quantum dot color filter and manufacturing method thereof, and display apparatus | |
TW201203318A (en) | Exposure method, exposure device, and device manufacturing method | |
EP1783822A4 (de) | Belichtungseinrichtung, belichtungseinrichtungs-elementreinigungsverfahren, belichtungseinrichtungs-wartungsverfahren, wartungseinrichtung und einrichtungsherstellungsverfahren | |
TW200739675A (en) | Substrate processing method, substrate processing device and manufacturing method for semiconductor device | |
EP3270217A3 (de) | Anzeigevorrichtung und herstellungsverfahren dafür | |
EP1672682A4 (de) | Substrat-transport-vorrichtung und -verfahren, belichtungs-vorrichtung und -verfahren und bauelementherstellungsverfahren | |
TW200735180A (en) | Manufacturing method of semiconductor device | |
TW200510957A (en) | Lithographic apparatus and device munufacturing method | |
TW200628921A (en) | Microlens array, method of fabricating microlens array, and liquid crystal display apparatus with microlens array | |
TW200632576A (en) | Exposure apparatus, exposure method and manufacturing method of device | |
WO2017080025A1 (zh) | 彩色滤光片的制作方法及彩色滤光片 | |
WO2008136155A1 (ja) | 液晶表示装置の製造方法及び液晶表示装置 | |
HK1147567A1 (en) | Substrate processing method, exposure apparatus and method for manufacturing device | |
US9508867B2 (en) | Thin film transistor, array substrate, method of fabricating same, and display device | |
WO2005111722A3 (en) | Apparatus and method for providing fluid for immersion lithography | |
DE602005021653D1 (de) | Belichtungsgeräte, belichtungsverfahren und bauelemente-herstellungsverfahren | |
TW200611398A (en) | Method of manufacturing an image sensor and image sensor | |
EP1975719A3 (de) | Verfahren zur Resiststrukturbildung und damit hergestellte Halbleitervorrichtung | |
US9960208B2 (en) | OLED display panel having opening zone for exposing sub-pixel sub-regions, and method for manufacturing the same | |
TW200628995A (en) | Exposure device, exposure method, and device manufacturing method | |
TW200736849A (en) | Exposure apparatus and device manufacturing method | |
US20170053939A1 (en) | Thin film transistor and method of manufacturing the same, array substrate and display panel |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20061214 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR |
|
DAX | Request for extension of the european patent (deleted) | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1102202 Country of ref document: HK |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20071210 |
|
17Q | First examination report despatched |
Effective date: 20080314 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: NIKON CORPORATION |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: NIKON CORPORATION |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: ONDA, MINORU Inventor name: NAGASAKA, HIROYUKI |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20160413 |
|
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1102202 Country of ref document: HK |