EP0208315B1 - Procédé pour l'usinage simultané des deux faces de pièces en forme de disque, en particulier de disques semi-conducteurs - Google Patents

Procédé pour l'usinage simultané des deux faces de pièces en forme de disque, en particulier de disques semi-conducteurs Download PDF

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Publication number
EP0208315B1
EP0208315B1 EP86109420A EP86109420A EP0208315B1 EP 0208315 B1 EP0208315 B1 EP 0208315B1 EP 86109420 A EP86109420 A EP 86109420A EP 86109420 A EP86109420 A EP 86109420A EP 0208315 B1 EP0208315 B1 EP 0208315B1
Authority
EP
European Patent Office
Prior art keywords
openings
workpiece
plastic
disc
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP86109420A
Other languages
German (de)
English (en)
Other versions
EP0208315A1 (fr
Inventor
Gerhard Dr. Dipl.-Ing. Brehm (Tu)
Ingo Haller
Otto Dipl.-Ing. Rothenaicher (Fh)
Karl-Heinz Ing. Grad. Langsdorf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of EP0208315A1 publication Critical patent/EP0208315A1/fr
Application granted granted Critical
Publication of EP0208315B1 publication Critical patent/EP0208315B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping

Definitions

  • the invention relates to a method for two-sided abrasive machining of disc-shaped workpieces, in particular semiconductor wafers, in which the workpieces, v .. 'I's is loaded than the workpiece having carrier disk in the openings staggered by engaging at its outer periphery drive unit in rotation, lesser thickness , with the addition of an abrasive suspension, are subjected to a circular movement between flat structures moving over their top and bottom sides.
  • Carrier washers are used, which are either entirely made of metal, e.g. Sheet steel, are made or consist entirely of plastic.
  • the metal carrier disks are characterized by long service lives, but cause damage to the edge of the wafer, such as edge chipping, in the course of the machining process, in particular in the case of the semiconductor wafers, which are often brittle and sensitive to mechanical loads, so that a large part of the machined disks can no longer be used. Such problems do not occur with the carrier disks made of plastic. However, the service life is short, since in particular the outer circumference of the carrier disks can withstand the mechanical loads caused by the drive unit, e.g. a planetary gear that cannot withstand long.
  • carrier disks made of hard material are described, in the at least one opening of which workpiece holders made of softer material are inserted, which in turn have an opening for receiving the workpieces.
  • the workpiece holders are free in the openings.
  • the object of the invention was to provide a further method which permits treatment on both sides, such as lapping or polishing of disk-shaped workpieces, with little mechanical stress on the workpiece edge and at the same time a long service life of the carrier disks used.
  • carrier disks which consist of a base plate provided with circular to polygonal openings with plastic surface structures fixed in these openings and which have openings for receiving the workpiece or workpieces to be machined at least the outer circumference of the carrier disks is made of a material with a tensile strength of at least 100 N / mm 2 , while in the area that comes into contact with the outer circumference of the workpiece, a plastic with a modulus of elasticity of 1.0 to 8x104 N / mm 2 is provided.
  • This process can be carried out in the customary machines, for example for polishing or lapping disk-shaped workpieces on both sides, under the conditions familiar to the person skilled in the art. It is particularly suitable for the machining of disks made of crystalline material such as semiconductor wafers made of e.g. silicon, germanium, gallium arsenide, gallium phosphide, indium phosphide or wafers made of oxidic material such as e.g. Gallium gadolinium garnet. In addition, it can also be used for the machining of disc-shaped workpieces made of other brittle materials such as Glass can be applied.
  • crystalline material such as semiconductor wafers made of e.g. silicon, germanium, gallium arsenide, gallium phosphide, indium phosphide or wafers made of oxidic material such as e.g. Gallium gadolinium garnet.
  • oxidic material such as e.g. Gallium gadolinium garnet.
  • Suitable materials are those which have sufficient mechanical stability in relation to the mechanical stresses caused by the drive, especially tensile and compressive loads.
  • Suitable materials such as metals such as aluminum or in particular various steels, generally have a tensile strength of at least 100 N / mm 2 , preferably at least 1000 N / mm 2.
  • care must be taken to ensure that the material selected is erosive from the one used acting suspension, that is, as a rule, attacked as little as possible by the polishing or lapping agent in order to increase the service life of the carrier disks and to largely exclude contamination of the workpieces to be machined.
  • the use of plastics with sufficient tensile strength for example some types of bakelite or fiber-reinforced materials, is not excluded.
  • plastics that come into contact with the outer circumference of the workpiece materials can be used which, due to their elasticity, ensure a low mechanical load on the workpiece circumference and, due to their mechanical stability, at the same time ensure secure storage of the workpiece during the machining process.
  • plastics with a modulus of elasticity of 1.0 to 8.10 4 N / mm2 are therefore suitable, in particular materials based on polyvinyl chloride, polypropylene, polyethylene or polytetrafluoroethylene.
  • influences on the mechanical stability resulting from the geometry of the area of the carrier disk consisting of plastic are also to be taken into account.
  • Carrier disks suitable for carrying out the method according to the invention which typically have a thickness of approximately 150-850 11 m, for example for the machining of semiconductor wafers depending on the thickness of the workpiece, can be designed in various ways. Both the metal and the plastic parts of these carrier disks can be inexpensively punched out in the desired shape Produce metal, preferably steel sheets and plastic, preferably polyvinyl chloride films of the appropriate thickness.
  • a possible embodiment which can advantageously also be used for lapping on both sides, consists of a base plate provided with circular to polygonal openings with plastic surface structures fixed in these openings, which are provided with openings for receiving the workpiece or workpieces to be machined.
  • the fixation can be achieved, for example, by gluing the plastic parts punched out to fit the metal base plate.
  • Another possibility is to first open the openings of the base plate e.g. after the injection molding process with a plastic film, preferably made of polypropylene, and then punch the desired opening out of this film. If necessary, the fixation can be further improved by recesses, for example groove-shaped or serrated, machined into the openings in the base plate.
  • these openings can also have a polygonal, for example prismatic, square or hexagonal cross section.
  • the principle applies that it is advisable to leave a margin for the inserted workpiece. In general it has e.g. Proven for round workpieces if they are surrounded by a gap of 0.1-2 mm width in the rest position.
  • carrier disks described here by way of example can be used without problems in conventional machines for double-sided polishing or lapping, the usual conditions familiar to the person skilled in the art, e.g. as far as the abrasive suspension used, temperature, processing pressure and the like are concerned, can be maintained or adjusted. If necessary, the carrier disks must be subjected to a comparative treatment, for example by lapping, before the first use in order to compensate for any differences in thickness between metal and plastic components. However, thickness differences of up to ⁇ 5% of the total thickness can usually be tolerated.
  • lapping and / or polishing on both sides, in particular of semiconductor wafers significantly reduces losses on wafers damaged in the edge region and thereby achieve service lives for carrier wafers which correspond to those of all-metal carrier wafers.
  • a commercially available apparatus for double-sided polishing of semiconductor wafers was loaded with 27 silicon wafers (diameter 76.2 mm, wafer thickness 450 pm), 3 wafers each in the openings of one of a total of 9 externally toothed carrier disks made of sheet steel and driven by planetary gears (thickness 380 ⁇ m, tensile strength 2000 N / mm 2 ) were inserted.
  • polishing agent a commercially available SiO 2 sol was supplied as the polishing agent and a temperature of approximately 40 ° C. was maintained; the polishing pressure was 0.5 bar (based on cm 2 disc area).
  • the disks were removed and examined microscopically in the edge region at a magnification of 40 to 100 times. All of the windows were clearly damaged and could no longer be used.
  • Carrier disks were used in the manner according to the invention, which were made of sheet steel (thickness 380 .mu.m, tensile strength 2000 N / mm 2 ) and had round, punched-out openings (inside diameter approx. 85 mm). These openings had been cast using the injection molding process with a polypolylene film (thickness approx. 380 ⁇ m, modulus of elasticity approx. 1.2. 10 3 N / mm 2 ), from which a circular opening with a diameter of approx. 77 mm had then been punched out. The fixation was improved in that the film was additionally interlocked with the carrier disk over 12 tooth-shaped recesses evenly distributed over the inner circumference of its openings.
  • the disks were also removed and examined under the microscope in the edge region. At 40- to 100-fold magnification, no damage was found, so that all the panes could be used again.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Claims (5)

1. Procédé destiné à un usinage par enlèvement simultané de matières sur les deux faces de pièces à usiner en forme de disques, en particulier de disques semi-conducteurs, dans lequel les pièces à usiner, qui sont disposées dans les ouvertures d'un disque de support, entraîné en rotation par une unité d'entraînement qui le saisit sur sa périphérie extérieure, et préservant une épaisseur inférieure à la pièce à usi r, sont soumises, avec ajout d'une suspension agissant par enlèvement de matière, à un déplacement tournant entre des éléments plans déplacés au-dessus de leurs faces supérieures et inférieures, caractérisé en ce que l'on utilise des disques de support qui sont constitués d'une plaque de base comportant des ouvertures circulaires à polygonales comportant, fixés dans ces ouvertures, des éléments plans en matière plastique qui comportent des ouvertures pour la réception de la pièce ou des pièces à usiner par enlèvement de matière, au moins la périphérie extérieure des disques de support étant constituée d'une matière présentant une résistance à la traction d'au moins 100 N/ mm2, alors que, dans la zone qui vient en contact avec la périphérie extérieure de la pièce à usiner, on utilise une matière plastique présentant un module d'élasticité de 1,0 à 8X104 N/mm2.
2. Procédé selon la revendication 1, caractérisé en ce que l'on emploie un métal comme matière dont la résistance à la traction est au moins égale à 100 N/mm2.
3. Procédé selon l'une des revendications 1 ou 2, caractérisé en ce que l'on choisit comme matière de l'acier.
4. Procédé selon l'une ou plusieurs des revendications 1 à 3, caractérisé en ce que la matière plastique est choisie dans le groupe constitué par le chlorure de polyvinyle, le polyéthylène, le polypropylène et le polytétrafluoréthylène.
5. Disque support de mise en oeuvre du procédé selon une ou plusieurs des revendications 1 à 4, caractérisé par une plaque de base ronde en métal présentant des ouvertures circulaires à polygonales, ainsi que des éléments plans en matière plastique, fixés dans ces ouvertures, comportant des ouvertures appropriées à recevoir la pièce à usiner par enlèvement de matière.
EP86109420A 1985-07-12 1986-07-10 Procédé pour l'usinage simultané des deux faces de pièces en forme de disque, en particulier de disques semi-conducteurs Expired - Lifetime EP0208315B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3524978 1985-07-12
DE19853524978 DE3524978A1 (de) 1985-07-12 1985-07-12 Verfahren zum beidseitigen abtragenden bearbeiten von scheibenfoermigen werkstuecken, insbesondere halbleiterscheiben

Publications (2)

Publication Number Publication Date
EP0208315A1 EP0208315A1 (fr) 1987-01-14
EP0208315B1 true EP0208315B1 (fr) 1990-09-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP86109420A Expired - Lifetime EP0208315B1 (fr) 1985-07-12 1986-07-10 Procédé pour l'usinage simultané des deux faces de pièces en forme de disque, en particulier de disques semi-conducteurs

Country Status (4)

Country Link
US (1) US4739589A (fr)
EP (1) EP0208315B1 (fr)
JP (1) JPS6224964A (fr)
DE (2) DE3524978A1 (fr)

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DE19905737C2 (de) * 1999-02-11 2000-12-14 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit
DE19956250C1 (de) * 1999-11-23 2001-05-17 Wacker Siltronic Halbleitermat Kostengünstiges Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben
DE19958077A1 (de) * 1999-12-02 2001-06-13 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Politur von Halbleiterscheiben
DE10004578C1 (de) * 2000-02-03 2001-07-26 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante
DE10012840C2 (de) * 2000-03-16 2001-08-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Vielzahl von polierten Halbleiterscheiben
DE10018338C1 (de) * 2000-04-13 2001-08-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE10023002A1 (de) * 2000-05-11 2001-11-29 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Politur von Halbleiterscheiben und Läuferscheiben zur Durchführung des Verfahrens
DE10060697A1 (de) * 2000-12-07 2002-06-27 Wacker Siltronic Halbleitermat Doppelseiten-Polierverfahren mit reduzierter Kratzerrate und Vorrichtung zur Durchführung des Verfahrens
DE10250823A1 (de) * 2002-10-31 2004-05-19 Wacker Siltronic Ag Läuferscheibe und Verfahren zur gleichzeitig beidseitigen Bearbeitung von Werkstücken
DE102004054567A1 (de) * 2004-11-11 2005-12-01 Siltronic Ag Verfahren zur Material abtragenden Bearbeitung von Halbleiterscheiben
DE102007056627A1 (de) 2007-03-19 2008-09-25 Siltronic Ag Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
DE102007013058A1 (de) 2007-03-19 2008-09-25 Siltronic Ag Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
DE102004004556B4 (de) * 2004-01-29 2008-12-24 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102007049811A1 (de) 2007-10-17 2009-04-23 Siltronic Ag Läuferscheibe, Verfahren zur Beschichtung einer Läuferscheibe sowie Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben
DE102009030292A1 (de) 2009-06-24 2010-12-30 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
DE102009025243A1 (de) 2009-06-17 2010-12-30 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe
DE102009047927A1 (de) 2009-10-01 2011-01-27 Siltronic Ag Läuferscheibe und Verfahren zur Politur einer Halbleiterscheibe
DE102010010885A1 (de) 2010-03-10 2011-09-15 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102011082777A1 (de) 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
DE102012206398A1 (de) 2012-04-18 2012-06-21 Siltronic Ag Verfahren zur beidseitigen Bearbeitung einer Scheibe aus Halbleitermaterial
DE102011080323A1 (de) 2011-08-03 2013-02-07 Siltronic Ag Verfahren zum Einebnen einer Halbleiterscheibe mit verbesserter Kantenschonung
DE102012201516A1 (de) 2012-02-02 2013-08-08 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102012206708A1 (de) 2012-04-24 2013-10-24 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102013211086A1 (de) 2013-06-14 2013-11-28 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102012214998A1 (de) 2012-08-23 2014-02-27 Siltronic Ag Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe
DE102012218745A1 (de) 2012-10-15 2014-04-17 Siltronic Ag Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe
DE102013201663A1 (de) 2012-12-04 2014-06-05 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102013200072A1 (de) * 2013-01-04 2014-07-10 Siltronic Ag Läuferscheibe und Verfahren zur gleichzeitig beidseitigen Politur von Halbleiterscheiben
DE102013200756A1 (de) 2013-01-18 2014-08-07 Siltronic Ag Läuferscheibe für die beidseitige Politur von Scheiben aus Halbleitermaterial
WO2019154790A1 (fr) 2018-02-09 2019-08-15 Siltronic Ag Procédé de polissage d'une plaquette de semi-conducteur
EP4212280A1 (fr) 2022-01-12 2023-07-19 Siltronic AG Procédé d'application d'un papier de polissage sur un disque de polissage

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USD726133S1 (en) 2012-03-20 2015-04-07 Veeco Instruments Inc. Keyed spindle
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JP5847789B2 (ja) * 2013-02-13 2016-01-27 信越半導体株式会社 両面研磨装置用キャリアの製造方法およびウエーハの両面研磨方法
CN106181747B (zh) * 2016-06-13 2018-09-04 江苏吉星新材料有限公司 一种大尺寸蓝宝石超薄双面抛光窗口片加工方法
JP6777530B2 (ja) * 2016-12-26 2020-10-28 クアーズテック株式会社 研磨方法
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DE19905737C2 (de) * 1999-02-11 2000-12-14 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit
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EP0208315A1 (fr) 1987-01-14
US4739589A (en) 1988-04-26
DE3674486D1 (de) 1990-10-31
JPS6224964A (ja) 1987-02-02
DE3524978A1 (de) 1987-01-22

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