EP0208315A1 - Procédé pour l'usinage simultané des deux faces de pièces en forme de disque, en particulier de disques semi-conducteurs - Google Patents

Procédé pour l'usinage simultané des deux faces de pièces en forme de disque, en particulier de disques semi-conducteurs Download PDF

Info

Publication number
EP0208315A1
EP0208315A1 EP86109420A EP86109420A EP0208315A1 EP 0208315 A1 EP0208315 A1 EP 0208315A1 EP 86109420 A EP86109420 A EP 86109420A EP 86109420 A EP86109420 A EP 86109420A EP 0208315 A1 EP0208315 A1 EP 0208315A1
Authority
EP
European Patent Office
Prior art keywords
openings
plastic
workpiece
carrier
circular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP86109420A
Other languages
German (de)
English (en)
Other versions
EP0208315B1 (fr
Inventor
Gerhard Dr. Dipl.-Ing. Brehm (Tu)
Ingo Haller
Otto Dipl.-Ing. Rothenaicher (Fh)
Karl-Heinz Ing. Grad. Langsdorf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of EP0208315A1 publication Critical patent/EP0208315A1/fr
Application granted granted Critical
Publication of EP0208315B1 publication Critical patent/EP0208315B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping

Definitions

  • the invention relates to a method for the double-sided machining of disk-shaped workpieces, in particular semiconductor wafers, in which the workpieces, which are inserted into the openings of a carrier disk which has a smaller thickness than the workpiece and which is rotated by a drive unit acting on its outer circumference, are added with the removal of a workpiece acting suspension to be subjected to a circular movement between sheets moving over their top and bottom.
  • Carrier washers are used, which are either made entirely of metal, e.g. Sheet steel, are made or consist entirely of plastic.
  • the carrier disks made of metal are characterized by long service lives, but cause damage to the edge of the wafer, such as edge chipping, in the course of the machining process, in particular in the case of the semiconductor wafers, which are often brittle and sensitive to mechanical loads, so that a large part of the machined disks no longer continue can be used.
  • Such problems do not occur with the carrier disks made of plastic.
  • the service life is short, since in particular the outer circumference of the carrier disks cannot withstand the mechanical loads from the drive unit, for example a planetary gear, for long.
  • the object is achieved by a method which is characterized in that carrier disks are used in which at least the outer circumference is made of a material with a tensile strength of at least 100 N / mm 2 , while in the area coming into contact with the outer circumference of the workpiece a plastic with a modulus of elasticity of 1.0 to 8-10 4 N / mm 2 is provided.
  • This method can be carried out in the customary machines, for example for polishing or lapping disk-shaped workpieces on both sides, under the conditions familiar to the person skilled in the art. It is particularly suitable for the machining of disks made of crystalline material, such as semiconductor wafers made of, for example, silicon, germanium, gallium arsenide, gallium phosphide, indium phosphide or wafers made of oxidic material such as gallium-gadolinium garnet. In addition, it can also be used for the machining of disc-shaped workpieces made of other brittle materials such as glass.
  • Suitable materials are those which have sufficient mechanical stability in relation to the mechanical loads caused by the drive, especially tensile and compressive loads.
  • Suitable materials such as metals such as aluminum or in particular various steels, generally have a tensile strength of at least 100 N / mm 2 , preferably at least 1000 N / mm 2 .
  • care must be taken to ensure that the selected material is attacked as little as possible by the abrasive suspension used, ie generally by the polishing or lapping agent, in order to increase the service life of the carrier disks and contamination of the workpieces to be machined largely excluded.
  • the use of plastics with sufficient tensile strength for example some types of Bakelite or fiber-reinforced materials, is not excluded.
  • plastics that come into contact with the outer circumference of the workpiece materials can be used which, due to their elasticity, ensure a low mechanical load on the workpiece circumference and, due to their mechanical stability, at the same time ensure secure storage of the workpiece during the machining process.
  • plastics with a modulus of elasticity of 1.0 to 8 ⁇ 10 4 N / mm 2 that is to say in particular materials based on polyvinyl chloride, polypropylene, polyethylene or polytetrafluoroethylene.
  • influences on the mechanical stability resulting from the geometry of the area of the carrier disk made of plastic are also to be taken into account.
  • Carrier disks suitable for carrying out the method according to the invention which typically have a thickness of approximately 150-850 ⁇ m, for example for the machining of semiconductor wafers depending on the thickness of the workpiece, can be designed in various ways.
  • a possible embodiment, which is particularly suitable for polishing on both sides, consists, for example, of a round base plate made of metal, preferably sheet steel. This has circular openings, into which flat structures made of plastic can be inserted, which in turn have openings suitable for receiving the material to be processed.
  • Such fabrics can for example be rings made of plastic with a width of favorable 1 to 10 mm, the outer diameter of which is advantageously chosen to be slightly smaller than the inner diameter of the carrier disk openings, so that they can be rotated due to this slight play.
  • the guidance of the rings during the rotary movement can also be improved, for example, by the inner circumferential surface of the openings not being made flat, but tapering inwards.
  • the inside diameter of the rings is generally chosen to be slightly larger than their outside diameter, so that they also have a margin for their own movements, for example rotation.
  • Both the metal and the plastic parts of these carrier disks can be inexpensively produced in the desired shape by punching from metal, preferably steel sheets and plastic, preferably polyvinyl chloride, films of appropriate thickness.
  • the carrier disks mentioned are used with particular advantage when machining workpieces that deviate from a circular geometry.
  • examples of this are disks with a square cross section made of cast, directionally solidified silicon, which are preferably used as the base material for solar cells, or disks made of semiconductor materials obtained by the boat-pulling process, such as gallium or indium phosphide.
  • plastic round plastic discs with square, rectangular or polygonal or elliptical to oval openings are used instead of plastic rings.
  • the workpieces placed in the openings are then in one opposite each other during the machining process the rotatable plastic disc fixed and only variable within the respective range held position, but remain rotatable together with the plastic disc within the opening of the carrier disc. With these materials, an improved geometry can be achieved in comparison with the conventional methods.
  • a carrier disk for carrying out the method according to the invention which can also be used advantageously for lapping on both sides, consists of a base plate provided with circular to polygonal openings with plastic surface structures fixed in these openings, which have openings for receiving the or workpieces to be machined are provided.
  • the fixation can be achieved, for example, by gluing the plastic parts punched out to fit the metal base plate.
  • Another possibility is to first pour the openings of the base plate, for example by injection molding, with a plastic film, preferably made of polypropylene, and then punch the desired opening out of this film. If necessary, the fixation can be further improved by recesses, for example groove-shaped or serrated, machined into the openings in the base plate.
  • these openings can also be polygonal. for example, have a prismatic, square or hexagonal cross section. Applies for the dimensions of the incorporated into the plastic of openings as in the embodiment with movable K unstscherinlagen the principle that a clearance appropriate for the inserted workpiece is left. In general, it has proven itself, for example, for round workpieces if they are surrounded by a gap of 0.1-2 mm width in the rest position.
  • a carrier disk for carrying out the method according to the invention consists of a round base plate made of plastic, which has suitable openings for receiving the workpieces to be machined and is surrounded by a ring made of metal, on which the drive unit acts.
  • a firm connection between the metal and plastic part has proven itself in order to ensure reliable transmission of the rotational movement predetermined by the drive to the inner region of the carrier disk.
  • the connection can be supported for example by gluing and / or the design of the inner edge of the metal ring, for example by using e.g. groove or serrated recesses of the metal ring and the plastic base plate are interlocked.
  • a polygonal, e.g. hexagonal inner circumference of the metal ring and a correspondingly shaped outer circumference of the base plate made of plastic are conceivable.
  • the method in question to fill the interior of the given ring, stamped, for example, from sheet steel, with the aid of the injection molding process, using a plastic plate made of, for example, polypropylene, and from there the openings for the workpieces of the appropriate size, i.e. to punch out with scope.
  • a plastic plate made of, for example, polypropylene
  • Another possibility is to prefabricate the ring and the base plate separately and to assemble the individual parts to the desired carrier disk only when required.
  • the carrier disks must be subjected to a comparative treatment, for example by lapping, before the first use in order to compensate for any differences in thickness between metal and plastic components.
  • differences in thickness of up to + 5% of the total thickness can usually be tolerated.
  • lapping and / or polishing on both sides, in particular of semiconductor wafers significantly reduces losses on wafers damaged in the edge region and thereby achieve service lives for carrier wafers which correspond to those of all-metal carrier wafers.
  • a commercially available apparatus for double-sided polishing of semiconductor wafers was loaded with 27 silicon wafers (diameter 76.2 mm, wafer thickness 450 ⁇ m), 3 wafers each in the openings of one of a total of 9 externally toothed carrier disks made of sheet steel and driven by planetary gears (thickness 380 pm, tensile strength 2000 N / mm 2 ) were inserted.
  • polishing agent a commercially available SiO 2 sol was supplied as the polishing agent and a temperature of approximately 40 ° C. was maintained; the polishing pressure was 0.5 bar (based on cm 2 disc area).
  • the disks were removed and examined microscopically in the edge region at a magnification of 40 to 100 times. All of the windows were clearly damaged and could no longer be used.
  • Carrier washers were used in the manner according to the invention, which were made of sheet steel (thickness 380 pm, tensile strength 2000 N / mm 2 ), and in their round, punched openings (inner diameter 85 mm) for receiving the washers an additional of 380 microns thick PVC - Foil punched ring (outer diameter 84.8 mm, inner diameter 77 mm, modulus of elasticity 1.5 ⁇ 10 3 N / mm 2 ) was inserted. This gave both the discs and the ring sufficient scope for their own movements.
  • the disks were also removed and examined under the microscope in the edge region. At 40- to 100-fold magnification, no damage was found, so that all the panes could be used again.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP86109420A 1985-07-12 1986-07-10 Procédé pour l'usinage simultané des deux faces de pièces en forme de disque, en particulier de disques semi-conducteurs Expired - Lifetime EP0208315B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19853524978 DE3524978A1 (de) 1985-07-12 1985-07-12 Verfahren zum beidseitigen abtragenden bearbeiten von scheibenfoermigen werkstuecken, insbesondere halbleiterscheiben
DE3524978 1985-07-12

Publications (2)

Publication Number Publication Date
EP0208315A1 true EP0208315A1 (fr) 1987-01-14
EP0208315B1 EP0208315B1 (fr) 1990-09-26

Family

ID=6275644

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86109420A Expired - Lifetime EP0208315B1 (fr) 1985-07-12 1986-07-10 Procédé pour l'usinage simultané des deux faces de pièces en forme de disque, en particulier de disques semi-conducteurs

Country Status (4)

Country Link
US (1) US4739589A (fr)
EP (1) EP0208315B1 (fr)
JP (1) JPS6224964A (fr)
DE (2) DE3524978A1 (fr)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0379214A2 (fr) * 1989-01-20 1990-07-25 Nkk Corporation Procédé pour roder les deux surfaces d'un disque en titane
US6416393B2 (en) 2000-04-13 2002-07-09 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for producing a semiconductor wafer
US6458688B1 (en) 1999-02-11 2002-10-01 Wacker Siltronic Gesellschaft für Halbleiter-Materialien AG Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer
US6514424B2 (en) 2000-05-11 2003-02-04 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for the double-side polishing of semiconductor wafers and carrier for carrying out the process
US6566267B1 (en) 1999-11-23 2003-05-20 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Inexpensive process for producing a multiplicity of semiconductor wafers
US6645862B2 (en) 2000-12-07 2003-11-11 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Double-side polishing process with reduced scratch rate and device for carrying out the process
US6793837B2 (en) 2001-07-05 2004-09-21 Siltronic Ag Process for material-removing machining of both sides of semiconductor wafers
US6899762B2 (en) 1999-08-13 2005-05-31 Siltronic Ag Epitaxially coated semiconductor wafer and process for producing it
US6997776B2 (en) 2004-01-29 2006-02-14 Siltronic Ag Process for producing a semiconductor wafer
US8398878B2 (en) 2009-06-17 2013-03-19 Siltronic Ag Methods for producing and processing semiconductor wafers
US9308619B2 (en) 2011-09-15 2016-04-12 Siltronic Ag Method for the double-side polishing of a semiconductor wafer
US10189142B2 (en) 2012-12-04 2019-01-29 Siltronic Ag Method for polishing a semiconductor wafer
DE102007056628B4 (de) 2007-03-19 2019-03-14 Siltronic Ag Verfahren und Vorrichtung zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
DE102018202059A1 (de) 2018-02-09 2019-08-14 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
WO2020064282A1 (fr) 2018-09-25 2020-04-02 Siltronic Ag Procédé de polissage d'une plaquette de semi-conducteur

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JPH0373265A (ja) * 1989-05-02 1991-03-28 Sekisui Chem Co Ltd 被研磨物保持用キャリヤ及びその製造方法
USRE37997E1 (en) 1990-01-22 2003-02-18 Micron Technology, Inc. Polishing pad with controlled abrasion rate
DE4011993A1 (de) * 1990-04-12 1991-10-17 Wacker Chemitronic Verfahren zur herstellung einseitig polierter scheiben, insbesondere halbleiterscheiben, durch chemomechanische zweiseitenpolitur, sowie dadurch erhaeltliche halbleiterscheiben
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US5695392A (en) * 1995-08-09 1997-12-09 Speedfam Corporation Polishing device with improved handling of fluid polishing media
MY129961A (en) * 1996-02-01 2007-05-31 Shinetsu Handotai Kk Double side polishing machine and method of polishing opposite sides of a workpiece using the same
US5876273A (en) * 1996-04-01 1999-03-02 Kabushiki Kaisha Toshiba Apparatus for polishing a wafer
JPH10180624A (ja) * 1996-12-19 1998-07-07 Shin Etsu Handotai Co Ltd ラッピング装置及び方法
US6241582B1 (en) 1997-09-01 2001-06-05 United Microelectronics Corp. Chemical mechanical polish machines and fabrication process using the same
US6062963A (en) * 1997-12-01 2000-05-16 United Microelectronics Corp. Retainer ring design for polishing head of chemical-mechanical polishing machine
DE19756537A1 (de) * 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Verfahren zum Erzielen eines möglichst linearen Verschleißverhaltens und Werkzeug mit möglichst linearem Verschleißverhalten
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US6089961A (en) * 1998-12-07 2000-07-18 Speedfam-Ipec Corporation Wafer polishing carrier and ring extension therefor
US6419555B1 (en) 1999-06-03 2002-07-16 Brian D. Goers Process and apparatus for polishing a workpiece
DE19958077A1 (de) * 1999-12-02 2001-06-13 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Politur von Halbleiterscheiben
DE10004578C1 (de) * 2000-02-03 2001-07-26 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante
DE10012840C2 (de) * 2000-03-16 2001-08-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Vielzahl von polierten Halbleiterscheiben
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DE10250823B4 (de) * 2002-10-31 2005-02-03 Siltronic Ag Läuferscheibe und Verfahren zur gleichzeitig beidseitigen Bearbeitung von Werkstücken
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US7579687B2 (en) * 2004-09-03 2009-08-25 Entorian Technologies, Lp Circuit module turbulence enhancement systems and methods
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DE102004054567A1 (de) * 2004-11-11 2005-12-01 Siltronic Ag Verfahren zur Material abtragenden Bearbeitung von Halbleiterscheiben
US7511969B2 (en) * 2006-02-02 2009-03-31 Entorian Technologies, Lp Composite core circuit module system and method
US8137157B2 (en) * 2006-11-21 2012-03-20 3M Innovative Properties Company Lapping carrier and method
DE102007013058B4 (de) 2007-03-19 2024-01-11 Lapmaster Wolters Gmbh Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
JP5076723B2 (ja) * 2007-08-09 2012-11-21 富士通株式会社 研磨装置、基板及び電子機器の製造方法
DE102007049811B4 (de) * 2007-10-17 2016-07-28 Peter Wolters Gmbh Läuferscheibe, Verfahren zur Beschichtung einer Läuferscheibe sowie Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben
DE102009030292B4 (de) 2009-06-24 2011-12-01 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
DE102009047927A1 (de) 2009-10-01 2011-01-27 Siltronic Ag Läuferscheibe und Verfahren zur Politur einer Halbleiterscheibe
DE102010010885B4 (de) * 2010-03-10 2017-06-08 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
JP5494224B2 (ja) * 2010-05-20 2014-05-14 信越半導体株式会社 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法
DE102011080323A1 (de) 2011-08-03 2013-02-07 Siltronic Ag Verfahren zum Einebnen einer Halbleiterscheibe mit verbesserter Kantenschonung
DE102012201516A1 (de) 2012-02-02 2013-08-08 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
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DE102012214998B4 (de) 2012-08-23 2014-07-24 Siltronic Ag Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe
DE102012218745A1 (de) 2012-10-15 2014-04-17 Siltronic Ag Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe
KR101422955B1 (ko) * 2012-12-20 2014-07-23 삼성전기주식회사 베이스 어셈블리 및 이를 구비하는 기록 디스크 구동장치
DE102013200072A1 (de) * 2013-01-04 2014-07-10 Siltronic Ag Läuferscheibe und Verfahren zur gleichzeitig beidseitigen Politur von Halbleiterscheiben
DE102013200756A1 (de) 2013-01-18 2014-08-07 Siltronic Ag Läuferscheibe für die beidseitige Politur von Scheiben aus Halbleitermaterial
JP5847789B2 (ja) * 2013-02-13 2016-01-27 信越半導体株式会社 両面研磨装置用キャリアの製造方法およびウエーハの両面研磨方法
DE102013211086A1 (de) 2013-06-14 2013-11-28 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
CN106181747B (zh) * 2016-06-13 2018-09-04 江苏吉星新材料有限公司 一种大尺寸蓝宝石超薄双面抛光窗口片加工方法
JP6777530B2 (ja) * 2016-12-26 2020-10-28 クアーズテック株式会社 研磨方法
EP4212280A1 (fr) 2022-01-12 2023-07-19 Siltronic AG Procédé d'application d'un papier de polissage sur un disque de polissage

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Cited By (17)

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Publication number Priority date Publication date Assignee Title
EP0379214A3 (en) * 1989-01-20 1990-10-31 Nkk Corporation Method for lapping two surfaces of a titanium disk
EP0379214A2 (fr) * 1989-01-20 1990-07-25 Nkk Corporation Procédé pour roder les deux surfaces d'un disque en titane
US6458688B1 (en) 1999-02-11 2002-10-01 Wacker Siltronic Gesellschaft für Halbleiter-Materialien AG Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer
US6583050B2 (en) 1999-02-11 2003-06-24 Wacker Siltronic Gesellschaft F{dot over (u)}r Halbleitermaterialien AG Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer
US6899762B2 (en) 1999-08-13 2005-05-31 Siltronic Ag Epitaxially coated semiconductor wafer and process for producing it
US6566267B1 (en) 1999-11-23 2003-05-20 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Inexpensive process for producing a multiplicity of semiconductor wafers
US6416393B2 (en) 2000-04-13 2002-07-09 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for producing a semiconductor wafer
US6514424B2 (en) 2000-05-11 2003-02-04 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for the double-side polishing of semiconductor wafers and carrier for carrying out the process
US6645862B2 (en) 2000-12-07 2003-11-11 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Double-side polishing process with reduced scratch rate and device for carrying out the process
US6793837B2 (en) 2001-07-05 2004-09-21 Siltronic Ag Process for material-removing machining of both sides of semiconductor wafers
US6997776B2 (en) 2004-01-29 2006-02-14 Siltronic Ag Process for producing a semiconductor wafer
DE102007056628B4 (de) 2007-03-19 2019-03-14 Siltronic Ag Verfahren und Vorrichtung zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
US8398878B2 (en) 2009-06-17 2013-03-19 Siltronic Ag Methods for producing and processing semiconductor wafers
US9308619B2 (en) 2011-09-15 2016-04-12 Siltronic Ag Method for the double-side polishing of a semiconductor wafer
US10189142B2 (en) 2012-12-04 2019-01-29 Siltronic Ag Method for polishing a semiconductor wafer
DE102018202059A1 (de) 2018-02-09 2019-08-14 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
WO2020064282A1 (fr) 2018-09-25 2020-04-02 Siltronic Ag Procédé de polissage d'une plaquette de semi-conducteur

Also Published As

Publication number Publication date
US4739589A (en) 1988-04-26
EP0208315B1 (fr) 1990-09-26
DE3524978A1 (de) 1987-01-22
DE3674486D1 (de) 1990-10-31
JPS6224964A (ja) 1987-02-02

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