DE69734762D1 - Verbindungsstruktur und verfahren zum verbinden eines halbleiterbauelementes mit einem substrat - Google Patents

Verbindungsstruktur und verfahren zum verbinden eines halbleiterbauelementes mit einem substrat

Info

Publication number
DE69734762D1
DE69734762D1 DE69734762T DE69734762T DE69734762D1 DE 69734762 D1 DE69734762 D1 DE 69734762D1 DE 69734762 T DE69734762 T DE 69734762T DE 69734762 T DE69734762 T DE 69734762T DE 69734762 D1 DE69734762 D1 DE 69734762D1
Authority
DE
Germany
Prior art keywords
substrate
semiconductor component
connecting structure
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69734762T
Other languages
English (en)
Other versions
DE69734762T2 (de
Inventor
Kenji Uchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69734762D1 publication Critical patent/DE69734762D1/de
Application granted granted Critical
Publication of DE69734762T2 publication Critical patent/DE69734762T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
DE69734762T 1996-09-05 1997-09-04 Verbindungsstruktur und verfahren zum verbinden eines halbleiterbauelementes mit einem substrat Expired - Lifetime DE69734762T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23561596 1996-09-05
JP23561596A JP3284262B2 (ja) 1996-09-05 1996-09-05 液晶表示装置及びそれを用いた電子機器
PCT/JP1997/003115 WO1998010465A1 (fr) 1996-09-05 1997-09-04 Structure de raccordement d'element semi-conducteur, dispositif d'affichage a cristaux liquides utilisant cette structure, et equipement electronique utilisant le dispositif d'affichage

Publications (2)

Publication Number Publication Date
DE69734762D1 true DE69734762D1 (de) 2006-01-05
DE69734762T2 DE69734762T2 (de) 2006-07-27

Family

ID=16988638

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69734762T Expired - Lifetime DE69734762T2 (de) 1996-09-05 1997-09-04 Verbindungsstruktur und verfahren zum verbinden eines halbleiterbauelementes mit einem substrat

Country Status (8)

Country Link
US (2) US6940180B1 (de)
EP (1) EP0878840B1 (de)
JP (1) JP3284262B2 (de)
KR (1) KR100511121B1 (de)
CN (1) CN1154166C (de)
DE (1) DE69734762T2 (de)
TW (1) TW354855B (de)
WO (1) WO1998010465A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3441412B2 (ja) * 1999-10-29 2003-09-02 シャープ株式会社 樹脂封止型半導体装置およびこれを用いた液晶表示モジュール
GB2366669A (en) 2000-08-31 2002-03-13 Nokia Mobile Phones Ltd Connector for liquid crystal display
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7411215B2 (en) 2002-04-15 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the same
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP3879642B2 (ja) 2002-09-20 2007-02-14 セイコーエプソン株式会社 ハンダ印刷用マスク、配線基板及びその製造方法、電気光学装置及びその製造方法、並びに電子機器及びその製造方法
JP4576558B2 (ja) * 2005-03-15 2010-11-10 カシオ計算機株式会社 回路基板への半導体装置の実装方法及び液晶表示装置の製造方法
TW200939766A (en) * 2008-03-03 2009-09-16 Techview Internat Technology Inc Display device
US8017873B2 (en) * 2008-03-03 2011-09-13 Himax Technologies Limited Built-in method of thermal dissipation layer for driver IC substrate and structure thereof
KR100946597B1 (ko) * 2008-03-03 2010-03-09 엘지이노텍 주식회사 눌림 특성이 우수한 도전성 입자 구조체와 그의 제조방법및 이를 이용한 이방성 도전 필름
JP4816750B2 (ja) * 2009-03-13 2011-11-16 住友電気工業株式会社 プリント配線基板の接続方法
WO2010151600A1 (en) 2009-06-27 2010-12-29 Michael Tischler High efficiency leds and led lamps
US8653539B2 (en) 2010-01-04 2014-02-18 Cooledge Lighting, Inc. Failure mitigation in arrays of light-emitting devices
US9480133B2 (en) 2010-01-04 2016-10-25 Cooledge Lighting Inc. Light-emitting element repair in array-based lighting devices
US8384121B2 (en) 2010-06-29 2013-02-26 Cooledge Lighting Inc. Electronic devices with yielding substrates
JP2012073233A (ja) * 2010-08-31 2012-04-12 Mitsumi Electric Co Ltd センサ装置及び半導体センサ素子の実装方法
JP5916334B2 (ja) * 2011-10-07 2016-05-11 デクセリアルズ株式会社 異方性導電接着剤及びその製造方法、発光装置及びその製造方法
US9231178B2 (en) 2012-06-07 2016-01-05 Cooledge Lighting, Inc. Wafer-level flip chip device packages and related methods
KR102231515B1 (ko) * 2014-02-04 2021-03-25 삼성디스플레이 주식회사 액정 표시 장치
US9925612B2 (en) * 2014-07-29 2018-03-27 Panasonic Intellectual Property Management Co., Ltd. Semiconductor component, semiconductor-mounted product including the component, and method of producing the product
CN105321435B (zh) * 2015-10-12 2019-03-12 华勤通讯技术有限公司 显示模组及含其的移动终端
US11217557B2 (en) 2019-05-14 2022-01-04 Innolux Corporation Electronic device having conductive particle between pads

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356642A (en) * 1980-08-27 1982-11-02 Shephard Herman Support device
US4604644A (en) * 1985-01-28 1986-08-05 International Business Machines Corporation Solder interconnection structure for joining semiconductor devices to substrates that have improved fatigue life, and process for making
US4803112A (en) * 1986-04-24 1989-02-07 Hayakawa Rubber Co., Ltd. Impact-cushioning sheets and direct-applying restraint type floor damping structures using the same
EP0265077A3 (de) * 1986-09-25 1989-03-08 Sheldahl, Inc. Ein Anisotropisches Klebemittel zum Verbinden elektrischer Bauelemente
JP2528112B2 (ja) 1987-03-13 1996-08-28 キヤノン株式会社 電気的接続部材及びそれを用いた電気回路部材
JPH0828399B2 (ja) 1987-03-13 1996-03-21 キヤノン株式会社 電気回路部材
JPH01264230A (ja) 1988-04-15 1989-10-20 Hitachi Ltd 半導体装置
JPH0234951A (ja) 1988-04-20 1990-02-05 Seiko Epson Corp 半導体装置の実装構造
US5187123A (en) * 1988-04-30 1993-02-16 Matsushita Electric Industrial Co., Ltd. Method for bonding a semiconductor device to a lead frame die pad using plural adhesive spots
US5262225A (en) * 1988-09-02 1993-11-16 Minnesota Mining And Manufacturing Company Embossable sign construction
EP0368262B1 (de) * 1988-11-09 2001-02-14 Nitto Denko Corporation Leitersubstrat, Filmträger, Halbleiteranordnung mit dem Filmträger und Montagestruktur mit der Halbleiteranordnung
JPH02133936A (ja) 1988-11-15 1990-05-23 Seiko Epson Corp 半導体装置
US5001542A (en) * 1988-12-05 1991-03-19 Hitachi Chemical Company Composition for circuit connection, method for connection using the same, and connected structure of semiconductor chips
US5299730A (en) * 1989-08-28 1994-04-05 Lsi Logic Corporation Method and apparatus for isolation of flux materials in flip-chip manufacturing
JP2698462B2 (ja) 1990-01-12 1998-01-19 松下電器産業株式会社 半導体装置の製造方法
US5670251A (en) * 1990-02-14 1997-09-23 Particle Interconnect Corporation Patternable particle filled adhesive matrix for forming patterned structures between joined surfaces
US5401587A (en) * 1990-03-27 1995-03-28 Kabushiki Kaisha Toyota Chuo Kenkyusho Anisotropic nanophase composite material and method of producing same
JP2749178B2 (ja) 1990-03-30 1998-05-13 株式会社竹中工務店 香り発生装置付植物プランター
JPH0487213A (ja) * 1990-07-27 1992-03-19 Ricoh Co Ltd 異方性導電膜およびその製造方法
JPH04132258A (ja) * 1990-09-25 1992-05-06 Nec Corp 半導体基板の接続体およびその接続方法
JPH04174980A (ja) * 1990-11-07 1992-06-23 Hitachi Chem Co Ltd 回路の接続部材
US5888609A (en) * 1990-12-18 1999-03-30 Valtion Teknillinen Tutkimuskeskus Planar porous composite structure and method for its manufacture
JPH04292803A (ja) 1991-03-20 1992-10-16 Hitachi Ltd 異方導電性フィルム
JPH04348540A (ja) * 1991-05-27 1992-12-03 Sony Corp フリップチップボンダー
US5225966A (en) * 1991-07-24 1993-07-06 At&T Bell Laboratories Conductive adhesive film techniques
US5232962A (en) * 1991-10-09 1993-08-03 Quantum Materials, Inc. Adhesive bonding composition with bond line limiting spacer system
DE4242408C2 (de) * 1991-12-11 1998-02-26 Mitsubishi Electric Corp Verfahren zum Verbinden eines Schaltkreissubstrates mit einem Halbleiterteil
JP2723747B2 (ja) 1992-03-18 1998-03-09 シャープ株式会社 半導体装置の接続方法
US5422175A (en) * 1992-06-01 1995-06-06 Toyo Boseki Kabushiki Kaisha Void-containing composite film of polyester type
JPH0613432A (ja) 1992-06-26 1994-01-21 Citizen Watch Co Ltd 半導体集積回路装置の接続方法
US5352926A (en) * 1993-01-04 1994-10-04 Motorola, Inc. Flip chip package and method of making
JPH06232207A (ja) 1993-01-29 1994-08-19 Matsushita Electric Ind Co Ltd 半導体装置の封止方法と封止構造
JPH06242458A (ja) 1993-02-17 1994-09-02 Sanyo Electric Co Ltd 液晶表示装置
US5401564A (en) * 1993-03-23 1995-03-28 Hexcel Corporation Materials and processes for fabricating formed composite articles and use in shoe arch
US5445308A (en) * 1993-03-29 1995-08-29 Nelson; Richard D. Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal
KR0152901B1 (ko) * 1993-06-23 1998-10-01 문정환 플라스틱 반도체 패키지 및 그 제조방법
JP3445641B2 (ja) * 1993-07-30 2003-09-08 株式会社デンソー 半導体装置
EP0641019A3 (de) * 1993-08-27 1995-12-20 Poly Flex Circuits Inc Flexibler, auf einem Polymer gedruckter Leiterrahmen.
JP3400051B2 (ja) * 1993-11-10 2003-04-28 ザ ウィタカー コーポレーション 異方性導電膜、その製造方法及びそれを使用するコネクタ
JP3579903B2 (ja) * 1993-11-12 2004-10-20 セイコーエプソン株式会社 半導体素子の実装構造及び半導体装置の実装構造並びに液晶表示装置
US5545475A (en) * 1994-09-20 1996-08-13 W. L. Gore & Associates Microfiber-reinforced porous polymer film and a method for manufacturing the same and composites made thereof
JP2643895B2 (ja) 1995-01-30 1997-08-20 日本電気株式会社 セラミック半導体装置およびその製造方法
US5641995A (en) * 1995-03-22 1997-06-24 Hewlett-Packard Company Attachment of ceramic chip carriers to printed circuit boards
US6059917A (en) * 1995-12-08 2000-05-09 Texas Instruments Incorporated Control of parallelism during semiconductor die attach
JP3319261B2 (ja) * 1996-01-19 2002-08-26 松下電器産業株式会社 バンプの観察方法
JP3463501B2 (ja) * 1996-03-01 2003-11-05 富士ゼロックス株式会社 入出力装置
JPH09297318A (ja) * 1996-03-06 1997-11-18 Seiko Epson Corp 液晶装置、液晶装置の製造方法および電子機器
JP3239762B2 (ja) * 1996-07-08 2001-12-17 松下電器産業株式会社 バンプ付きワークのボンディング方法
JPH1084014A (ja) * 1996-07-19 1998-03-31 Shinko Electric Ind Co Ltd 半導体装置の製造方法
US5818700A (en) * 1996-09-24 1998-10-06 Texas Instruments Incorporated Microelectronic assemblies including Z-axis conductive films
US6246098B1 (en) * 1996-12-31 2001-06-12 Intel Corporation Apparatus for reducing reflections off the surface of a semiconductor surface
US5973389A (en) * 1997-04-22 1999-10-26 International Business Machines Corporation Semiconductor chip carrier assembly

Also Published As

Publication number Publication date
JP3284262B2 (ja) 2002-05-20
JPH1084002A (ja) 1998-03-31
WO1998010465A1 (fr) 1998-03-12
US6940180B1 (en) 2005-09-06
EP0878840A4 (de) 1999-11-10
KR100511121B1 (ko) 2005-11-21
US20050056948A1 (en) 2005-03-17
DE69734762T2 (de) 2006-07-27
KR20000064326A (ko) 2000-11-06
US7084517B2 (en) 2006-08-01
CN1200196A (zh) 1998-11-25
EP0878840B1 (de) 2005-11-30
TW354855B (en) 1999-03-21
CN1154166C (zh) 2004-06-16
EP0878840A1 (de) 1998-11-18

Similar Documents

Publication Publication Date Title
DE69734762D1 (de) Verbindungsstruktur und verfahren zum verbinden eines halbleiterbauelementes mit einem substrat
DE69709699D1 (de) Verfahren zum Verbinden von einem Substrat und einem elektronischen Bauteil
DE69125128D1 (de) Verfahren zum Verbinden eines IC-Chips mit einem mit Leitermuster versehenem Substrat
DE19782131T1 (de) Halteeinrichtungen und Verfahren zum Positionieren mehrerer Gegenstände auf einem Substrat
DE59209764D1 (de) Verfahren zum Erzeugen einer mehrstufigen Struktur in einem Substrat
DE69943161D1 (de) Vorrichtung und verfahren zum auftragen einer heiss-siegelbaren schicht auf ein substrat
DE59813331D1 (de) Verfahren und einrichtung zum vakuumbeschichten eines substrates
DE69619602T2 (de) Verfahren zum Herstellen eines Halbleiter-Substrats
DE69425325T2 (de) Verfahren zum verbinden eines porösen mediums mit einem substrat
DE69409005T2 (de) Verfahren zum abdichten poröser substrate
DE3784796D1 (de) Verfahren zum verbinden eines halbleiterchips mit einem substrat.
DE69633339D1 (de) Verfahren zum verändern einer freiliegenden oberfläche eines halbleiterwafers
DE69428955D1 (de) Verfahren zum Verbinden eines biegsamen Substrates zu Kontaktobjekten und zu ihren Strukturen
DE69832011D1 (de) Vorrichtung und Verfahren zum Waschen eines Substrats
DE19781956T1 (de) Verfahren und Vorrichtung zum Aufbringen einer planarisierten dielektrischen Schicht auf einem Halbleitersubstrat
DE69834931D1 (de) Verfahren zum entfernen von rückständen von einem halbleitersubstrat
DE69635530D1 (de) Verfahren zum Trocknen eines Substrats
DE69406041D1 (de) Polierscheibe und ein Verfahren zur Polierung eines Halbleitersubstrats
DE69724915D1 (de) Vorrichtung und Verfahren zum Waschen eines Substrats
DE69702272D1 (de) Verfahren zum Belichten der Randbereiche eines Halbleiterwafers, und Gerät zur Ausführung des Verfahrens
DE69834064D1 (de) Montagestruktur einer Halbleiteranordnung und Verfahren zum Montieren einer Halbleiteranordnung
DE69622824D1 (de) Verfahren und Vorrichtung zum Auflösen einer Oberflächenschicht eines Halbleitersubstrats
DE69702727T2 (de) Fluorsiliconkautschukzusammensetzung und Verfahren zum Verkleben mit einem Substrat
DE69418184T2 (de) Verfahren zur verbindung von halbleiterchips mit einem substrat
DE69810431D1 (de) Beschichtetes Substrat aus Superlegierung und Verfahren zum Beschichten eines Superlegierungssubstrates

Legal Events

Date Code Title Description
8364 No opposition during term of opposition