TW354855B - Connecting structure of semiconductor element - Google Patents

Connecting structure of semiconductor element

Info

Publication number
TW354855B
TW354855B TW086112692A TW86112692A TW354855B TW 354855 B TW354855 B TW 354855B TW 086112692 A TW086112692 A TW 086112692A TW 86112692 A TW86112692 A TW 86112692A TW 354855 B TW354855 B TW 354855B
Authority
TW
Taiwan
Prior art keywords
connecting structure
semiconductor device
semiconductor element
substrate
bonding layer
Prior art date
Application number
TW086112692A
Other languages
English (en)
Inventor
Kenji Uchiyama
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of TW354855B publication Critical patent/TW354855B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H—ELECTRICITY
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01049—Indium [In]
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    • H01L2924/0105—Tin [Sn]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Wire Bonding (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Die Bonding (AREA)
TW086112692A 1996-09-05 1997-09-03 Connecting structure of semiconductor element TW354855B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23561596A JP3284262B2 (ja) 1996-09-05 1996-09-05 液晶表示装置及びそれを用いた電子機器

Publications (1)

Publication Number Publication Date
TW354855B true TW354855B (en) 1999-03-21

Family

ID=16988638

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112692A TW354855B (en) 1996-09-05 1997-09-03 Connecting structure of semiconductor element

Country Status (8)

Country Link
US (2) US6940180B1 (zh)
EP (1) EP0878840B1 (zh)
JP (1) JP3284262B2 (zh)
KR (1) KR100511121B1 (zh)
CN (1) CN1154166C (zh)
DE (1) DE69734762T2 (zh)
TW (1) TW354855B (zh)
WO (1) WO1998010465A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7955975B2 (en) 2002-04-09 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3441412B2 (ja) * 1999-10-29 2003-09-02 シャープ株式会社 樹脂封止型半導体装置およびこれを用いた液晶表示モジュール
GB2366669A (en) 2000-08-31 2002-03-13 Nokia Mobile Phones Ltd Connector for liquid crystal display
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
TWI270919B (en) 2002-04-15 2007-01-11 Semiconductor Energy Lab Display device and method of fabricating the same
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP3879642B2 (ja) 2002-09-20 2007-02-14 セイコーエプソン株式会社 ハンダ印刷用マスク、配線基板及びその製造方法、電気光学装置及びその製造方法、並びに電子機器及びその製造方法
JP4576558B2 (ja) * 2005-03-15 2010-11-10 カシオ計算機株式会社 回路基板への半導体装置の実装方法及び液晶表示装置の製造方法
US8017873B2 (en) * 2008-03-03 2011-09-13 Himax Technologies Limited Built-in method of thermal dissipation layer for driver IC substrate and structure thereof
KR100946597B1 (ko) * 2008-03-03 2010-03-09 엘지이노텍 주식회사 눌림 특성이 우수한 도전성 입자 구조체와 그의 제조방법및 이를 이용한 이방성 도전 필름
TW200939766A (en) * 2008-03-03 2009-09-16 Techview Internat Technology Inc Display device
JP4816750B2 (ja) * 2009-03-13 2011-11-16 住友電気工業株式会社 プリント配線基板の接続方法
WO2010151600A1 (en) 2009-06-27 2010-12-29 Michael Tischler High efficiency leds and led lamps
US8653539B2 (en) 2010-01-04 2014-02-18 Cooledge Lighting, Inc. Failure mitigation in arrays of light-emitting devices
US9480133B2 (en) 2010-01-04 2016-10-25 Cooledge Lighting Inc. Light-emitting element repair in array-based lighting devices
WO2012000114A1 (en) 2010-06-29 2012-01-05 Cooledge Lightning Inc. Electronic devices with yielding substrates
JP2012073233A (ja) * 2010-08-31 2012-04-12 Mitsumi Electric Co Ltd センサ装置及び半導体センサ素子の実装方法
JP5916334B2 (ja) * 2011-10-07 2016-05-11 デクセリアルズ株式会社 異方性導電接着剤及びその製造方法、発光装置及びその製造方法
US9231178B2 (en) 2012-06-07 2016-01-05 Cooledge Lighting, Inc. Wafer-level flip chip device packages and related methods
KR102231515B1 (ko) * 2014-02-04 2021-03-25 삼성디스플레이 주식회사 액정 표시 장치
US9925612B2 (en) * 2014-07-29 2018-03-27 Panasonic Intellectual Property Management Co., Ltd. Semiconductor component, semiconductor-mounted product including the component, and method of producing the product
CN105321435B (zh) * 2015-10-12 2019-03-12 华勤通讯技术有限公司 显示模组及含其的移动终端
US11217557B2 (en) 2019-05-14 2022-01-04 Innolux Corporation Electronic device having conductive particle between pads

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356642A (en) * 1980-08-27 1982-11-02 Shephard Herman Support device
US4604644A (en) * 1985-01-28 1986-08-05 International Business Machines Corporation Solder interconnection structure for joining semiconductor devices to substrates that have improved fatigue life, and process for making
US4803112A (en) * 1986-04-24 1989-02-07 Hayakawa Rubber Co., Ltd. Impact-cushioning sheets and direct-applying restraint type floor damping structures using the same
EP0265077A3 (en) * 1986-09-25 1989-03-08 Sheldahl, Inc. An anisotropic adhesive for bonding electrical components
JP2528112B2 (ja) 1987-03-13 1996-08-28 キヤノン株式会社 電気的接続部材及びそれを用いた電気回路部材
JPH0828399B2 (ja) 1987-03-13 1996-03-21 キヤノン株式会社 電気回路部材
JPH01264230A (ja) 1988-04-15 1989-10-20 Hitachi Ltd 半導体装置
JPH0234951A (ja) 1988-04-20 1990-02-05 Seiko Epson Corp 半導体装置の実装構造
US5187123A (en) * 1988-04-30 1993-02-16 Matsushita Electric Industrial Co., Ltd. Method for bonding a semiconductor device to a lead frame die pad using plural adhesive spots
US5262225A (en) * 1988-09-02 1993-11-16 Minnesota Mining And Manufacturing Company Embossable sign construction
SG49842A1 (en) * 1988-11-09 1998-06-15 Nitto Denko Corp Wiring substrate film carrier semiconductor device made by using the film carrier and mounting structure comprising the semiconductor
JPH02133936A (ja) * 1988-11-15 1990-05-23 Seiko Epson Corp 半導体装置
US5001542A (en) * 1988-12-05 1991-03-19 Hitachi Chemical Company Composition for circuit connection, method for connection using the same, and connected structure of semiconductor chips
US5299730A (en) * 1989-08-28 1994-04-05 Lsi Logic Corporation Method and apparatus for isolation of flux materials in flip-chip manufacturing
JP2698462B2 (ja) * 1990-01-12 1998-01-19 松下電器産業株式会社 半導体装置の製造方法
US5670251A (en) * 1990-02-14 1997-09-23 Particle Interconnect Corporation Patternable particle filled adhesive matrix for forming patterned structures between joined surfaces
US5401587A (en) * 1990-03-27 1995-03-28 Kabushiki Kaisha Toyota Chuo Kenkyusho Anisotropic nanophase composite material and method of producing same
JP2749178B2 (ja) 1990-03-30 1998-05-13 株式会社竹中工務店 香り発生装置付植物プランター
JPH0487213A (ja) * 1990-07-27 1992-03-19 Ricoh Co Ltd 異方性導電膜およびその製造方法
JPH04132258A (ja) * 1990-09-25 1992-05-06 Nec Corp 半導体基板の接続体およびその接続方法
JPH04174980A (ja) * 1990-11-07 1992-06-23 Hitachi Chem Co Ltd 回路の接続部材
US5888609A (en) * 1990-12-18 1999-03-30 Valtion Teknillinen Tutkimuskeskus Planar porous composite structure and method for its manufacture
JPH04292803A (ja) 1991-03-20 1992-10-16 Hitachi Ltd 異方導電性フィルム
JPH04348540A (ja) * 1991-05-27 1992-12-03 Sony Corp フリップチップボンダー
US5225966A (en) * 1991-07-24 1993-07-06 At&T Bell Laboratories Conductive adhesive film techniques
US5232962A (en) * 1991-10-09 1993-08-03 Quantum Materials, Inc. Adhesive bonding composition with bond line limiting spacer system
DE4242408C2 (de) * 1991-12-11 1998-02-26 Mitsubishi Electric Corp Verfahren zum Verbinden eines Schaltkreissubstrates mit einem Halbleiterteil
JP2723747B2 (ja) 1992-03-18 1998-03-09 シャープ株式会社 半導体装置の接続方法
US5422175A (en) * 1992-06-01 1995-06-06 Toyo Boseki Kabushiki Kaisha Void-containing composite film of polyester type
JPH0613432A (ja) 1992-06-26 1994-01-21 Citizen Watch Co Ltd 半導体集積回路装置の接続方法
US5352926A (en) * 1993-01-04 1994-10-04 Motorola, Inc. Flip chip package and method of making
JPH06232207A (ja) * 1993-01-29 1994-08-19 Matsushita Electric Ind Co Ltd 半導体装置の封止方法と封止構造
JPH06242458A (ja) 1993-02-17 1994-09-02 Sanyo Electric Co Ltd 液晶表示装置
US5401564A (en) * 1993-03-23 1995-03-28 Hexcel Corporation Materials and processes for fabricating formed composite articles and use in shoe arch
US5445308A (en) * 1993-03-29 1995-08-29 Nelson; Richard D. Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal
KR0152901B1 (ko) * 1993-06-23 1998-10-01 문정환 플라스틱 반도체 패키지 및 그 제조방법
JP3445641B2 (ja) * 1993-07-30 2003-09-08 株式会社デンソー 半導体装置
EP0641019A3 (en) * 1993-08-27 1995-12-20 Poly Flex Circuits Inc Flexible lead frame printed on a polymer.
JP3400051B2 (ja) * 1993-11-10 2003-04-28 ザ ウィタカー コーポレーション 異方性導電膜、その製造方法及びそれを使用するコネクタ
WO1995013625A1 (en) * 1993-11-12 1995-05-18 Seiko Epson Corporation Structure and method for mounting semiconductor device and liquid crystal display device
US5545475A (en) * 1994-09-20 1996-08-13 W. L. Gore & Associates Microfiber-reinforced porous polymer film and a method for manufacturing the same and composites made thereof
JP2643895B2 (ja) 1995-01-30 1997-08-20 日本電気株式会社 セラミック半導体装置およびその製造方法
US5641995A (en) * 1995-03-22 1997-06-24 Hewlett-Packard Company Attachment of ceramic chip carriers to printed circuit boards
US6059917A (en) * 1995-12-08 2000-05-09 Texas Instruments Incorporated Control of parallelism during semiconductor die attach
JP3319261B2 (ja) * 1996-01-19 2002-08-26 松下電器産業株式会社 バンプの観察方法
US5907375A (en) * 1996-03-01 1999-05-25 Fuji Xerox Co., Ltd. Input-output unit
JPH09297318A (ja) * 1996-03-06 1997-11-18 Seiko Epson Corp 液晶装置、液晶装置の製造方法および電子機器
JP3239762B2 (ja) * 1996-07-08 2001-12-17 松下電器産業株式会社 バンプ付きワークのボンディング方法
JPH1084014A (ja) * 1996-07-19 1998-03-31 Shinko Electric Ind Co Ltd 半導体装置の製造方法
US5818700A (en) * 1996-09-24 1998-10-06 Texas Instruments Incorporated Microelectronic assemblies including Z-axis conductive films
US6246098B1 (en) * 1996-12-31 2001-06-12 Intel Corporation Apparatus for reducing reflections off the surface of a semiconductor surface
US5973389A (en) * 1997-04-22 1999-10-26 International Business Machines Corporation Semiconductor chip carrier assembly

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7955975B2 (en) 2002-04-09 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8120033B2 (en) 2002-04-09 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8502215B2 (en) 2002-04-09 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8946718B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8946717B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10050065B2 (en) 2002-04-09 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10700106B2 (en) 2002-04-09 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10854642B2 (en) 2002-04-09 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same

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JP3284262B2 (ja) 2002-05-20
WO1998010465A1 (fr) 1998-03-12
EP0878840B1 (en) 2005-11-30
KR100511121B1 (ko) 2005-11-21
DE69734762T2 (de) 2006-07-27
EP0878840A4 (en) 1999-11-10
US6940180B1 (en) 2005-09-06
KR20000064326A (ko) 2000-11-06
EP0878840A1 (en) 1998-11-18
CN1154166C (zh) 2004-06-16
CN1200196A (zh) 1998-11-25
DE69734762D1 (de) 2006-01-05
US20050056948A1 (en) 2005-03-17
US7084517B2 (en) 2006-08-01
JPH1084002A (ja) 1998-03-31

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