DE69418184T2 - Verfahren zur verbindung von halbleiterchips mit einem substrat - Google Patents

Verfahren zur verbindung von halbleiterchips mit einem substrat

Info

Publication number
DE69418184T2
DE69418184T2 DE69418184T DE69418184T DE69418184T2 DE 69418184 T2 DE69418184 T2 DE 69418184T2 DE 69418184 T DE69418184 T DE 69418184T DE 69418184 T DE69418184 T DE 69418184T DE 69418184 T2 DE69418184 T2 DE 69418184T2
Authority
DE
Germany
Prior art keywords
substrate
semiconductor chips
connecting semiconductor
chips
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69418184T
Other languages
English (en)
Other versions
DE69418184D1 (de
Inventor
Michael Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of DE69418184D1 publication Critical patent/DE69418184D1/de
Application granted granted Critical
Publication of DE69418184T2 publication Critical patent/DE69418184T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
DE69418184T 1993-02-09 1994-02-08 Verfahren zur verbindung von halbleiterchips mit einem substrat Expired - Fee Related DE69418184T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/015,473 US5249732A (en) 1993-02-09 1993-02-09 Method of bonding semiconductor chips to a substrate
PCT/US1994/001401 WO1994018699A1 (en) 1993-02-09 1994-02-08 Method of bonding semiconductor chips to a substrate

Publications (2)

Publication Number Publication Date
DE69418184D1 DE69418184D1 (de) 1999-06-02
DE69418184T2 true DE69418184T2 (de) 1999-12-02

Family

ID=21771608

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69418184T Expired - Fee Related DE69418184T2 (de) 1993-02-09 1994-02-08 Verfahren zur verbindung von halbleiterchips mit einem substrat

Country Status (6)

Country Link
US (1) US5249732A (de)
EP (1) EP0683922B1 (de)
JP (1) JPH08506698A (de)
KR (1) KR960700525A (de)
DE (1) DE69418184T2 (de)
WO (1) WO1994018699A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665639A (en) * 1994-02-23 1997-09-09 Cypress Semiconductor Corp. Process for manufacturing a semiconductor device bump electrode using a rapid thermal anneal
US5612256A (en) * 1995-02-10 1997-03-18 Micron Display Technology, Inc. Multi-layer electrical interconnection structures and fabrication methods
US5537738A (en) * 1995-02-10 1996-07-23 Micron Display Technology Inc. Methods of mechanical and electrical substrate connection
US5766053A (en) * 1995-02-10 1998-06-16 Micron Technology, Inc. Internal plate flat-panel field emission display
DE19509262C2 (de) * 1995-03-15 2001-11-29 Siemens Ag Halbleiterbauelement mit Kunststoffumhüllung und Verfahren zu dessen Herstellung
US6001724A (en) * 1996-01-29 1999-12-14 Micron Technology, Inc. Method for forming bumps on a semiconductor die using applied voltage pulses to an aluminum wire
US5834062A (en) * 1996-06-27 1998-11-10 Motorola, Inc. Material transfer apparatus and method of using the same
US6174449B1 (en) 1998-05-14 2001-01-16 Micron Technology, Inc. Magnetically patterned etch mask
US5897341A (en) * 1998-07-02 1999-04-27 Fujitsu Limited Diffusion bonded interconnect
US6234376B1 (en) * 1999-07-13 2001-05-22 Kulicke & Soffa Investments, Inc. Supplying a cover gas for wire ball bonding
KR100591461B1 (ko) * 2005-03-04 2006-06-20 (주)실리콘화일 두 반도체 기판의 알루미늄 전극 접합방법
US7442570B2 (en) 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
US8567246B2 (en) 2010-10-12 2013-10-29 Invensense, Inc. Integrated MEMS device and method of use
US9664750B2 (en) 2011-01-11 2017-05-30 Invensense, Inc. In-plane sensing Lorentz force magnetometer
US8947081B2 (en) 2011-01-11 2015-02-03 Invensense, Inc. Micromachined resonant magnetic field sensors
US8860409B2 (en) 2011-01-11 2014-10-14 Invensense, Inc. Micromachined resonant magnetic field sensors
EP3257074A1 (de) 2015-02-11 2017-12-20 InvenSense, Inc. 3d-integration mit eutektischer al-ge-gebundener verbindung
CN105016291A (zh) * 2015-06-07 2015-11-04 上海华虹宏力半导体制造有限公司 可减少mems键合过程中铝锗键合桥连的结构
US10192850B1 (en) 2016-09-19 2019-01-29 Sitime Corporation Bonding process with inhibited oxide formation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140849A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd ゲルマニウム半導体装置
JPS6293335A (ja) * 1985-10-18 1987-04-28 Sumitomo Electric Ind Ltd 半導体装置の結線用導体
US5014111A (en) * 1987-12-08 1991-05-07 Matsushita Electric Industrial Co., Ltd. Electrical contact bump and a package provided with the same
JP2891432B2 (ja) * 1989-12-27 1999-05-17 田中電子工業株式会社 半導体材料の接続方法，それに用いる接続材料及び半導体装置
JPH03208354A (ja) * 1990-01-10 1991-09-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0437138A (ja) * 1990-06-01 1992-02-07 Mitsubishi Materials Corp ワイヤーバンプによるバンプ形成方法
US5193738A (en) * 1992-09-18 1993-03-16 Microfab Technologies, Inc. Methods and apparatus for soldering without using flux

Also Published As

Publication number Publication date
EP0683922B1 (de) 1999-04-28
EP0683922A1 (de) 1995-11-29
DE69418184D1 (de) 1999-06-02
KR960700525A (ko) 1996-01-20
US5249732A (en) 1993-10-05
JPH08506698A (ja) 1996-07-16
WO1994018699A1 (en) 1994-08-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee