DE68918982T2 - Verfahren zur Trennung integrierter Schaltkreise auf einem Substrat. - Google Patents

Verfahren zur Trennung integrierter Schaltkreise auf einem Substrat.

Info

Publication number
DE68918982T2
DE68918982T2 DE68918982T DE68918982T DE68918982T2 DE 68918982 T2 DE68918982 T2 DE 68918982T2 DE 68918982 T DE68918982 T DE 68918982T DE 68918982 T DE68918982 T DE 68918982T DE 68918982 T2 DE68918982 T2 DE 68918982T2
Authority
DE
Germany
Prior art keywords
substrate
integrated circuits
separating integrated
separating
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68918982T
Other languages
English (en)
Other versions
DE68918982D1 (de
Inventor
Donald J Drake
William G Hawkins
Michael R Campanelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE68918982D1 publication Critical patent/DE68918982D1/de
Publication of DE68918982T2 publication Critical patent/DE68918982T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1626—Manufacturing processes etching
    • B41J2/1628—Manufacturing processes etching dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1601—Production of bubble jet print heads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1623—Manufacturing processes bonding and adhesion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1626—Manufacturing processes etching
    • B41J2/1629—Manufacturing processes etching wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/13—Heads having an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Drying Of Semiconductors (AREA)
DE68918982T 1988-04-25 1989-04-24 Verfahren zur Trennung integrierter Schaltkreise auf einem Substrat. Expired - Lifetime DE68918982T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/185,600 US4822755A (en) 1988-04-25 1988-04-25 Method of fabricating large area semiconductor arrays

Publications (2)

Publication Number Publication Date
DE68918982D1 DE68918982D1 (de) 1994-12-01
DE68918982T2 true DE68918982T2 (de) 1995-04-27

Family

ID=22681669

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918982T Expired - Lifetime DE68918982T2 (de) 1988-04-25 1989-04-24 Verfahren zur Trennung integrierter Schaltkreise auf einem Substrat.

Country Status (4)

Country Link
US (1) US4822755A (de)
EP (1) EP0339912B1 (de)
JP (1) JPH01313956A (de)
DE (1) DE68918982T2 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5195371A (en) * 1988-01-13 1993-03-23 The Charles Stark Draper Laboratory, Inc. Semiconductor chip transducer
US5067233A (en) * 1989-07-24 1991-11-26 Grumman Aerospace Corporation Method of forming an integrated circuit module
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5053836A (en) * 1989-11-21 1991-10-01 Eastman Kodak Company Cleaving of diode arrays with scribing channels
US4997793A (en) * 1989-11-21 1991-03-05 Eastman Kodak Company Method of improving cleaving of diode arrays
US4997792A (en) * 1989-11-21 1991-03-05 Eastman Kodak Company Method for separation of diode array chips during fabrication thereof
US4961821A (en) * 1989-11-22 1990-10-09 Xerox Corporation Ode through holes and butt edges without edge dicing
DE4012080A1 (de) * 1990-04-14 1991-10-17 Bosch Gmbh Robert Verfahren zum aufbau von mikromechanischen sensoren
US5041190A (en) * 1990-05-16 1991-08-20 Xerox Corporation Method of fabricating channel plates and ink jet printheads containing channel plates
US5272114A (en) * 1990-12-10 1993-12-21 Amoco Corporation Method for cleaving a semiconductor crystal body
DE4114660C2 (de) * 1991-05-06 1997-09-18 Telefunken Microelectron Verfahren zur Herstellung glaspassivierter Halbleiterbauelemente
US5192959A (en) * 1991-06-03 1993-03-09 Xerox Corporation Alignment of pagewidth bars
US5160403A (en) * 1991-08-09 1992-11-03 Xerox Corporation Precision diced aligning surfaces for devices such as ink jet printheads
US5198054A (en) * 1991-08-12 1993-03-30 Xerox Corporation Method of making compensated collinear reading or writing bar arrays assembled from subunits
US5221397A (en) * 1992-11-02 1993-06-22 Xerox Corporation Fabrication of reading or writing bar arrays assembled from subunits
DE4317721C1 (de) * 1993-05-27 1994-07-21 Siemens Ag Verfahren zur Vereinzelung von Chips aus einem Wafer
US5580831A (en) * 1993-07-28 1996-12-03 Fujitsu Limited Sawcut method of forming alignment marks on two faces of a substrate
JPH07186388A (ja) * 1993-11-22 1995-07-25 Xerox Corp 大規模配列インク・ジェット・プリントヘッドおよびその製造方法
US5691248A (en) * 1995-07-26 1997-11-25 International Business Machines Corporation Methods for precise definition of integrated circuit chip edges
US5915370A (en) * 1996-03-13 1999-06-29 Micron Technology, Inc. Saw for segmenting a semiconductor wafer
US5882532A (en) * 1996-05-31 1999-03-16 Hewlett-Packard Company Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding
US5940685A (en) * 1996-10-28 1999-08-17 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of UV-sensitive back illuminated CCD image sensors
US6448153B2 (en) * 1996-10-29 2002-09-10 Tru-Si Technologies, Inc. Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
US6498074B2 (en) 1996-10-29 2002-12-24 Tru-Si Technologies, Inc. Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
US6882030B2 (en) 1996-10-29 2005-04-19 Tru-Si Technologies, Inc. Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
KR100377033B1 (ko) * 1996-10-29 2003-03-26 트러시 테크날러지스 엘엘시 Ｉｃ 및 그 제조방법
US6290861B1 (en) * 1997-07-15 2001-09-18 Silverbrook Research Pty Ltd Method of manufacture of a conductive PTFE bend actuator vented ink jet printer
US5972781A (en) * 1997-09-30 1999-10-26 Siemens Aktiengesellschaft Method for producing semiconductor chips
US6339881B1 (en) * 1997-11-17 2002-01-22 Xerox Corporation Ink jet printhead and method for its manufacture
US6013540A (en) * 1998-05-01 2000-01-11 Lucent Technologies, Inc. Laser diode with substrate-side protection
US6033489A (en) * 1998-05-29 2000-03-07 Fairchild Semiconductor Corp. Semiconductor substrate and method of making same
US6449831B1 (en) * 1998-06-19 2002-09-17 Lexmark International, Inc Process for making a heater chip module
US6131263A (en) * 1998-10-26 2000-10-17 Lucent Technologies Inc. Method and apparatus for releasing laser bars after facet coating
US20020118253A1 (en) * 2000-03-21 2002-08-29 Nec Corporation Ink jet head having improved pressure chamber and its manufacturing method
JP2001260366A (ja) 2000-03-21 2001-09-25 Nec Corp インクジェット記録ヘッドおよびその製造方法
EP1148544A1 (de) * 2000-04-19 2001-10-24 Infineon Technologies AG Verfahren zum Dünnen eines Substrats
US6425971B1 (en) * 2000-05-10 2002-07-30 Silverbrook Research Pty Ltd Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes
US6402301B1 (en) 2000-10-27 2002-06-11 Lexmark International, Inc Ink jet printheads and methods therefor
US6629756B2 (en) 2001-02-20 2003-10-07 Lexmark International, Inc. Ink jet printheads and methods therefor
US6982184B2 (en) * 2001-05-02 2006-01-03 Silverbrook Research Pty Ltd Method of fabricating MEMS devices on a silicon wafer
DE10122839B4 (de) * 2001-05-11 2007-11-29 Qimonda Ag Verfahren zum Vereinzeln von Halbleiterstrukturen sowie zum Vereinzeln vorbereitetes Halbleitersubstrat
US6679587B2 (en) * 2001-10-31 2004-01-20 Hewlett-Packard Development Company, L.P. Fluid ejection device with a composite substrate
US6902867B2 (en) * 2002-10-02 2005-06-07 Lexmark International, Inc. Ink jet printheads and methods therefor
US20050023260A1 (en) * 2003-01-10 2005-02-03 Shinya Takyu Semiconductor wafer dividing apparatus and semiconductor device manufacturing method
DE102005046479B4 (de) * 2005-09-28 2008-12-18 Infineon Technologies Austria Ag Verfahren zum Spalten von spröden Materialien mittels Trenching Technologie
EP2373488B1 (de) * 2008-12-02 2013-02-27 OCE-Technologies B.V. Verfahren zur herstellung eines tintenstrahldruckkopfs
US8118405B2 (en) * 2008-12-18 2012-02-21 Eastman Kodak Company Buttable printhead module and pagewide printhead
US10244181B2 (en) 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US10038304B2 (en) 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
US8995493B2 (en) 2009-02-17 2015-03-31 Trilumina Corp. Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
US20130223846A1 (en) 2009-02-17 2013-08-29 Trilumina Corporation High speed free-space optical communications
US8995485B2 (en) 2009-02-17 2015-03-31 Trilumina Corp. High brightness pulsed VCSEL sources
WO2011075609A1 (en) * 2009-12-19 2011-06-23 Trilumina Corporation System and method for combining laser arrays for digital outputs
US8979338B2 (en) 2009-12-19 2015-03-17 Trilumina Corp. System for combining laser array outputs into a single beam carrying digital data
EP2434528A1 (de) * 2010-09-28 2012-03-28 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Aktiver Träger zum Tragen eines Wafer und Freisetzungsverfahren
US11095365B2 (en) 2011-08-26 2021-08-17 Lumentum Operations Llc Wide-angle illuminator module
JP2015177061A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置の製造方法および半導体装置
US10336074B1 (en) 2018-01-18 2019-07-02 Rf Printing Technologies Inkjet printhead with hierarchically aligned printhead units

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689389A (en) * 1969-12-16 1972-09-05 Bell Telephone Labor Inc Electrochemically controlled shaping of semiconductors
JPS5124190B2 (de) * 1971-08-28 1976-07-22
JPS4934280A (de) * 1972-07-28 1974-03-29
JPS5245879A (en) * 1975-10-09 1977-04-11 Sanyo Electric Co Ltd Method of dividing semiconductor element
JPS5325350A (en) * 1976-08-23 1978-03-09 Hitachi Ltd Dicing method of semiconductor substrates
JPS5591138A (en) * 1978-12-27 1980-07-10 Nec Corp Die forming of semiconductor device
US4295924A (en) * 1979-12-17 1981-10-20 International Business Machines Corporation Method for providing self-aligned conductor in a V-groove device
US4358340A (en) * 1980-07-14 1982-11-09 Texas Instruments Incorporated Submicron patterning without using submicron lithographic technique
US4409319A (en) * 1981-07-15 1983-10-11 International Business Machines Corporation Electron beam exposed positive resist mask process
JPS58171832A (ja) * 1982-03-31 1983-10-08 Toshiba Corp 半導体装置の製造方法
DE3275447D1 (en) * 1982-07-03 1987-03-19 Ibm Deutschland Process for the formation of grooves having essentially vertical lateral silicium walls by reactive ion etching
JPS60157236A (ja) * 1984-01-25 1985-08-17 Matsushita Electric Ind Co Ltd ダイシング法
US4542397A (en) * 1984-04-12 1985-09-17 Xerox Corporation Self aligning small scale integrated circuit semiconductor chips to form large area arrays
US4526631A (en) * 1984-06-25 1985-07-02 International Business Machines Corporation Method for forming a void free isolation pattern utilizing etch and refill techniques
JPS6167243A (ja) * 1984-09-10 1986-04-07 Matsushita Electric Ind Co Ltd ダイシング法
JPS61216338A (ja) * 1985-03-20 1986-09-26 Sanyo Electric Co Ltd 半導体装置の製造方法
US4604161A (en) * 1985-05-02 1986-08-05 Xerox Corporation Method of fabricating image sensor arrays
US4612554A (en) * 1985-07-29 1986-09-16 Xerox Corporation High density thermal ink jet printhead
US4661201A (en) * 1985-09-09 1987-04-28 Cts Corporation Preferential etching of a piezoelectric material
JPS62174941A (ja) * 1986-01-28 1987-07-31 Nec Corp 半導体集積回路
US4670092A (en) * 1986-04-18 1987-06-02 Rockwell International Corporation Method of fabricating a cantilever beam for a monolithic accelerometer
US4729971A (en) * 1987-03-31 1988-03-08 Microwave Semiconductor Corporation Semiconductor wafer dicing techniques

Also Published As

Publication number Publication date
DE68918982D1 (de) 1994-12-01
JPH01313956A (ja) 1989-12-19
EP0339912B1 (de) 1994-10-26
EP0339912A3 (en) 1990-02-07
JPH0532905B2 (de) 1993-05-18
US4822755A (en) 1989-04-18
EP0339912A2 (de) 1989-11-02

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