JP2891432B2 - 半導体材料の接続方法，それに用いる接続材料及び半導体装置 - Google Patents

半導体材料の接続方法，それに用いる接続材料及び半導体装置

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Publication number
JP2891432B2
JP2891432B2 JP2304509A JP30450990A JP2891432B2 JP 2891432 B2 JP2891432 B2 JP 2891432B2 JP 2304509 A JP2304509 A JP 2304509A JP 30450990 A JP30450990 A JP 30450990A JP 2891432 B2 JP2891432 B2 JP 2891432B2
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Japan
Prior art keywords
alloy
ball
wiring
semiconductor material
substrate
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Expired - Lifetime
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JP2304509A
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English (en)
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JPH04174527A (ja
Inventor
俊典 小柏
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体材料の接続方法、詳しくはワイヤレス
ボンディング法、特にフリップチップボンディング法ま
たはテープキャリアボンディング法により半導体チップ
等の半導体材料を基板にボンディングする際の接続方
法，それに用いる接続材料及びこの接続方法により製造
される半導体装置に関する。
（従来の技術） 従来、ワイヤボンダにより形成されるバンプ電極を用
いた半導体材料の接続方法及びそれに用いる接続材料と
して、例えば特開昭63−301535号公報に開示される如く
Pb,Sn,Inの何れか１つを主要元素として、かつ急冷凝固
法により作製された細い合金ワイヤーの先端を加熱して
ボールを形成し該ボールを基板の配線上面又は半導体材
料の配線上面に接着させた状態で合金ワイヤーを引張る
ことにより、ボールがその根本部から切断されて基板の
配線上面又は半導体材料の配線上面にバンプ電極を形成
せしめ、そのバンプ電極を介して半導体材料を接続する
方法と、Pb,Sn,Inの何れか一つを主要元素とし、それに
添加元素を配合した合金を急冷凝固法により細い合金ワ
イヤー状に作製して、ワイヤーボンダを用いたバンプ電
極の形成に特に有用なものがある。
ところで近年、半導体チップの配線材料にはエレクト
ロマイグレーションを抑制し、配線の信頼性を改善する
等の点からAl−Si,Al−Cu−Si等のAl合金がしばしば用
いられるようになっている。
（発明が解決しようとする課題） しかし乍ら、このような従来の半導体材料の接続方法
では、ボールを半導体材料の配線上面又は基板の配線上
面に直接接着されるが、これら配線がAl合金の場合には
CuCl2，ZnCl2，NH4Cl，SnCl2,HCl等を含有したフラック
ス中で加熱して、Al合金の表面に形成される酸化物を除
去しなければ、Al合金配線上に直接バンプ電極を形成す
ることはできず、工程が増えて時間を要するだけでなく
コスト高になるという問題がある。
本発明は斯る従来事情に鑑み、急冷凝固法により作製
された合金ワイヤーを用いてAl合金配線上に直接バンプ
電極を接合することを目的とする。
（課題を解決するための手段） 上記課題を達成するために本発明が講ずる技術的手段
は、半導体材料の接続方法が、Pb,Sn,Inの何れか一つを
主要元素として、かつ急冷凝固法により作製された細い
合金ワイヤーの先端を加熱してブリネル硬度が６以上の
硬さを有するボールを形成し、該ボールを半導体材料の
Al合金配線上面又は基板のAl合金配線上面に接着させた
状態で合金ワイヤーを引張ることにより、ボールがその
根本部から切断されて半導体材料のAl合金配線上面又は
基板のAl合金配線上面にバンプ電極を形成せしめ、その
バンプ電極を介して半導体材料を基板に接続することを
特徴とする。
そして、半導体材料の接続材料が、Pb,Sn,Inの何れか
１つを主要元素とし、それに添加元素を配合した合金を
急冷凝固法により細いワイヤー状に作製し、該合金ワイ
ヤーの先端を加熱してブリネル硬度が６以上の硬さを有
するボールを形成してなることを特徴とする。
また、上記添加元素がBe,B,C,Mg,Al,Si,P,Ca,Ti,V,C
r,Mn,Fe,Co,Ni,Cu,Zn,Ga,Ge,Se,Zr,Nb,Mo,Pd,Ag,Cd,In,
Sn,Pb,Sb,Te,Ir,Pt,Au,Tl,Bi中の１種又は２種以上であ
ることが好ましい。
更に、半導体装置が、半導体装置本体の半導体材料
を、Pb,Sn,Inの何れか一つを主要元素として、かつ急冷
凝固法により作製された細い合金ワイヤーの先端に加熱
形成したボールからなるバンプ電極を介して基板に電気
的に接続して形成されたものにおいて、前記半導体材料
の配線又は基板の配線をAl合金により形成すると共に、
ボールの硬度をブリネル硬度が６以上の硬さにしたこと
を特徴とする。
また、上記合金ワイヤーが主要元素に添加元素を配合
した合金材料であり、この添加元素がBe,B,C,Mg,Al,Si,
P,Ca,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Zn,Ga,Ge,Se,Zr,Nb,Mo,P
d,Ag,Cd,In,Sn,Pb,Sb,Te,Ir,Pt,Au,Tl,Bi中の１種又は
２種以上であることが好ましい。
（作用） 本発明は上記技術的手段によれば、HB 6以上の硬さを
有するはんだボールが、通常HB 12程度のAl合金配線上
の表面酸化膜を破壊し、Al合金配線新生面とはんだボー
ル新生面の間で拡散が起り、金属学的接合がなされるを
もって、合金ワイヤーの先端に形成したボールを直接Al
合金配線上に接合させるものである。
（実施例） 以下、本発明の一実施例を図面に基づいて説明する。
この実施例は第１図に示す如く半導体装置本体Ａが、
基板１の上面に例えばCu配線にSn又はAuメッキされる配
線1aを配設し、この基板１の中央部に半導体材料として
の半導体チップ２を搭載して、その表面に形成されたAl
−Si又はAl−Cu−Si等からなるAl合金配線2aと、上記基
板１の配線1aとがバンプ電極3bを介して電気的に接続さ
れると共に、半導体チップ２と基板１の配線1aの一部と
がシリコン等の保護樹脂６で封止される所謂フリップチ
ップボンディング型であり、更に第２図〜第５図に示す
如く接続材料としての合金ワイヤー３から供給されるボ
ール3aを、先ず半導体チップ２のAl合金配線2a上面に接
合させるものである。
上記合金ワイヤー３ははんだ材料、即ちPb,Sn,Inの何
れか１つを主要元素とし、それに添加元素を配合せしめ
た合金であり、かつ急冷凝固法により作製された細線で
ある。
合金ワイヤー３の添加元素としては、Be,B,C,Mg,Al,S
i,P,Ca,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Zn,Ga,Ge,Se,Zr,Nb,M
o,Pd,Ag,Cd,Sb,Te,Ir,Pt,Au,Tl,Bi中の１種又は２種以
上を配合せしめ、また主要元素Pb,Sn,Inをそれを含まな
い主要元素中に添加することもよい。
この合金ワイヤー３は前記急冷処理によって多くの格
子欠陥が導入され、結晶粒が微細化して非平衡相が生成
され、元素相互間に強制固溶が生じた組織状態にあり、
更に線引き加工によって加工硬化に伴う格子欠陥が導入
され、添加元素によって固溶硬化した組織状態にある。
そして得られた合金ワイヤー３を第２図に示す如くキ
ャピラリ４に挿通して、その先端を電気トーチ５で加熱
することにより、HB（ブリネリ硬度）が６以上の硬さを
有するボール3aを形成する。
次に、第３図に示す如くキャピラリ４を下降させて合
金ワイヤー３先端に形成されたボール3aを、半導体チッ
プ３上に形成されたAl合金配線2a上面に付着させる。
この時、ボール3aがHB 6以上の硬さを有することによ
り、通常HB 12程度のAl合金配線2a上面の表面酸化物を
破壊し、Al合金配線2aの新生面とボール3a新生面の間で
拡散が起り金属学的接合がなされるをもって、ボール3a
がAl合金配線2a上面に直接接合する。
更に、第４図に示す如くボール3aをAl合金配線2aに付
着させた状態でキャピラリ４を引き上げることにより、
ボール3aの根本部で合金ワイヤー３から切断されAl合金
配線2a上面にボール3aが供給されてバンプ電極3bが形成
される。
上記合金ワイヤー３の切断はボール3bを加熱形成した
際に、ボール3bの根本部において前記非平衡相が消失
し、元素相互間の強制固溶が解放して格子欠陥が解放
し、結晶粒が粗大化した組織状態となっているため、そ
の部分の引張り強度が減少し、キャピラリ４により合金
ワイヤー３を引き上げるだけでボール3bがその根本部で
降伏、破断することによって起こる。
次に、第５図に示す如くAl合金配線2a上面に付着され
たバンプ電極3bを、基板１の上面に形成された配線1aに
直接当接させて熱圧着することにより、Al合金配線2aと
基板１の配線1aとが電気的に接続されると共に、半導体
チップ２が取付けられる。
また、上記バンプ電極3bを、基板上面の配線1aに接続
する前に塩化物又はヨウ化物系のフラックス中にて加熱
溶融（リフロー）し、ボール3bの真球度をより向上させ
ることもできるが、リフローせずに直接接続しても所期
の目的を達成することは可能である。
更に、第６図に示すものは本発明の他の実施例であ
り、このものは半導体装置本体Ａが、半導体材料として
の半導体チップ２のAl合金配線2a上にバンプ電極3bを形
成し、これに例えばCu箔にSn又はAuメッキされるフィル
ムリード７を接合させて該フィルムリード７の先端と、
基板１の配線1aとを接合した所謂テープキャリアボンデ
ィング型である。
尚、前記両実施例では半導体チップ２にAl合金配線2a
を形成し、これにボール3aが接合されてバンプ電極3bを
形成したが、これに限定されず、基板１の配線1aをAl合
金配線とし、これにボール3aが接合されてバンプ電極3b
を形成しても良い。
以下に、本発明の合金ワイヤー３の種類、ボール形成
能、ボール硬さ、Al−Si合金配線への接合性を、ボール
硬さHB 6未満に作製された比較品と共に表１〜表27中に
示す。
尚、本発明合金ワイヤーにおける急冷凝固時の冷却速
度は102〜105℃/secであり、本発明実施品及び比較品の
ワイヤーは何れも線径60μｍφに作製したものを試料と
した。
上記試料の特性中、ボール形成能とは、各試料をセラ
ミックス性のキャピラリに通し、アルゴンガスに5vol％
水素ガスを加えたガス噴出下で、試料の先端近くに設け
た電極と試料との間のアーク放電によりボールを形成さ
せ、そのボールの形成状況を評価したものであり、評価
○印は真球度が良く、表面形状が滑らかなボールが形成
できたものである。
（発明の効果） 本発明は上記の構成であるから、以下の利点を有す
る。
HB 6以上の硬さを有するはんだボールが、通常HB 12
程度のAl合金配線上の表面酸化膜を破壊し、Al合金配線
新生面とはんだボール新生面の間で拡散が起り、金属学
的接合がなされるをもって、合金ワイヤーの先端に形成
したボールを直接Al合金配線上に接合させるので、急冷
凝固法により作製された合金ワイヤーを用いてAl合金配
線上に直接バンプ電極を接合することができる。
従って、Al合金の表面に形成される酸化物を除去しな
ければAl合金配線上に直接バンプ電極を形成できない従
来ものに比べ、工程が減って時間を要せず、コストも低
減できる。
【図面の簡単な説明】
第１図は本発明の一実施例を示す半導体装置の縦断側面
図、第２図〜第５図は半導体材料の接続方法を工程順に
示す部分拡大縦断側面図、第６図は本発明の他の実施例
を示す半導体装置の縦断側面図である。 Ａ……半導体装置本体 １……基板、1a……配線 ２……半導体材料（半導体チップ） 2a……Al合金配線、３……合金ワイヤー 3a……ボール、3b……バンプ電極

Claims (5)

    (57)【特許請求の範囲】
  1. 【請求項１】Pb,Sn,Inの何れか一つを主要元素として、
    かつ急冷凝固法により作製された細い合金ワイヤーの先
    端を加熱してブリネル硬度が６以上の硬さを有するボー
    ルを形成し、該ボールを半導体材料のAl合金配線上面又
    は基板のAl合金配線上面に接合させた状態で合金ワイヤ
    ーを引張ることにより、ボールがその根本部から切断さ
    れて半導体材料のAl合金配線上面又は基板のAl合金配線
    上面にバンプ電極を形成せしめ、そのバンプ電極を介し
    て半導体材料を基板に接続する半導体材料の接続方法。
  2. 【請求項２】Pb,Sn,Inの何れか１つを主要元素とし、そ
    れに添加元素を配合した合金を急冷凝固法により細いワ
    イヤー状に作製し、該合金ワイヤーの先端を加熱してブ
    リネル硬度が６以上の硬さを有するボールを形成してな
    る半導体材料の接続材料。
  3. 【請求項３】上記添加元素がBe,B,C,Mg,Al,Si,P,Ca,Ti,
    V,Cr,Mn,Fe,Co,Ni,Cu,Zn,Ga,Ge,Se,Zr,Nb,Mo,Pd,Ag,Cd,
    In,Sn,Pb,Sb,Te,Ir,Pt,Au,Tl,Bi中の１種又は２種以上
    である請求項２記載の半導体材料の接続材料。
  4. 【請求項４】半導体装置本体の半導体材料を、Pb,Sn,In
    の何れか一つを主要元素として、かつ急冷凝固法により
    作製された細い合金ワイヤーの先端に加熱形成したボー
    ルからなるバンプ電極を介して基板に電気的に接続して
    形成された半導体装置において、前記半導体材料の配線
    又は基板の配線をAl合金により形成すると共に、ボール
    の硬度をブリネル硬度が６以上の硬さにしたことを特徴
    とする半導体装置。
  5. 【請求項５】上記合金ワイヤーが主要元素に添加元素を
    配合した合金材料であり、この添加元素がBe,B,C,Mg,A
    l,Si,P,Ca,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Zn,Ga,Ge,Se,Zr,N
    b,Mo,Pd,Ag,Cd,In,Sn,Pb,Sb,Te,Ir,Pt,Au,Tl,Bi中の１
    種又は２種以上である請求項４記載の半導体装置。
JP2304509A 1989-12-27 1990-11-09 半導体材料の接続方法，それに用いる接続材料及び半導体装置 Expired - Lifetime JP2891432B2 (ja)

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JP1-340132 1989-12-27
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JP2-222729 1990-08-24
JP22272990 1990-08-24

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Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2201545B (en) * 1987-01-30 1991-09-11 Tanaka Electronics Ind Method for connecting semiconductor material
JP2891432B2 (ja) * 1989-12-27 1999-05-17 田中電子工業株式会社 半導体材料の接続方法，それに用いる接続材料及び半導体装置
FR2696279B1 (fr) * 1992-09-25 1994-11-18 Thomson Csf Procédé pour permettre le montage d'une puce sur un substrat et puce préparée selon le procédé.
US5249732A (en) * 1993-02-09 1993-10-05 National Semiconductor Corp. Method of bonding semiconductor chips to a substrate
JP3337049B2 (ja) * 1995-05-17 2002-10-21 田中電子工業株式会社 ボンディング用金線
US5985692A (en) * 1995-06-07 1999-11-16 Microunit Systems Engineering, Inc. Process for flip-chip bonding a semiconductor die having gold bump electrodes
JP3238051B2 (ja) * 1995-08-25 2001-12-10 京セラ株式会社 ろう材
US5776824A (en) * 1995-12-22 1998-07-07 Micron Technology, Inc. Method for producing laminated film/metal structures for known good die ("KG") applications
US5686318A (en) 1995-12-22 1997-11-11 Micron Technology, Inc. Method of forming a die-to-insert permanent connection
US6404063B2 (en) 1995-12-22 2002-06-11 Micron Technology, Inc. Die-to-insert permanent connection and method of forming
US6371361B1 (en) * 1996-02-09 2002-04-16 Matsushita Electric Industrial Co., Ltd. Soldering alloy, cream solder and soldering method
US5731244A (en) 1996-05-28 1998-03-24 Micron Technology, Inc. Laser wire bonding for wire embedded dielectrics to integrated circuits
US5821494A (en) * 1996-09-27 1998-10-13 International Business Machines Corporation Method of electrical connection between head transducer and suspension by solder wire bumping at slider level and laser reflow
JP3226213B2 (ja) * 1996-10-17 2001-11-05 松下電器産業株式会社 半田材料及びそれを用いた電子部品
US6635514B1 (en) * 1996-12-12 2003-10-21 Tessera, Inc. Compliant package with conductive elastomeric posts
US6179935B1 (en) * 1997-04-16 2001-01-30 Fuji Electric Co., Ltd. Solder alloys
US5885893A (en) * 1997-06-09 1999-03-23 Highlight Optoelectronics, Inc. Impact-free wire bonding of microelectronic devices
US6165888A (en) * 1997-10-02 2000-12-26 Motorola, Inc. Two step wire bond process
US6656422B2 (en) * 1998-03-30 2003-12-02 Yamatake Corporation Die-bonding solder materials
JPH11340005A (ja) * 1998-05-28 1999-12-10 Murata Mfg Co Ltd チップ型電子部品
FR2786656B1 (fr) * 1998-11-27 2001-01-26 Alstom Technology Composant electronique de puissance comportant des moyens de refroidissement
JP3414342B2 (ja) * 1999-11-25 2003-06-09 日本電気株式会社 集積回路チップの実装構造および実装方法
EP1243026A1 (en) * 1999-12-21 2002-09-25 Advanced Micro Devices, Inc. Organic packages with solders for reliable flip chip connections
US20030001286A1 (en) * 2000-01-28 2003-01-02 Ryoichi Kajiwara Semiconductor package and flip chip bonding method therein
JP4174174B2 (ja) * 2000-09-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置およびその製造方法並びに半導体装置実装構造体
US20030183948A1 (en) * 2002-04-01 2003-10-02 Tham Yew Fei Golden unit
JP2005259915A (ja) * 2004-03-10 2005-09-22 Nec Electronics Corp 半導体装置およびその製造方法
US7749336B2 (en) 2005-08-30 2010-07-06 Indium Corporation Of America Technique for increasing the compliance of tin-indium solders
US9260768B2 (en) 2005-12-13 2016-02-16 Indium Corporation Lead-free solder alloys and solder joints thereof with improved drop impact resistance
US8247272B2 (en) * 2007-12-27 2012-08-21 United Test And Assembly Center Ltd. Copper on organic solderability preservative (OSP) interconnect and enhanced wire bonding process
DE102008054415A1 (de) * 2008-12-09 2010-06-10 Robert Bosch Gmbh Anordnung zweier Substrate mit einer SLID-Bondverbindung und Verfahren zur Herstellung einer solchen Anordnung
EP2362432B1 (en) * 2010-02-25 2017-06-07 Saint-Augustin Canada Electric Inc. Solar cell assembly
TWI395313B (zh) 2012-11-07 2013-05-01 Wire technology co ltd 銲球凸塊結構及其形成方法
JP2014151364A (ja) * 2013-02-13 2014-08-25 Toyota Industries Corp はんだ及びダイボンド構造

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2298237A (en) * 1941-03-07 1942-10-06 American Smelting Refining Lead base coating alloy
US3644115A (en) * 1970-03-23 1972-02-22 Tatsuta Densen Kk Soldering filler metal
US3744121A (en) * 1970-08-15 1973-07-10 Asahi Glass Co Ltd Process for soldering difficultly solderable metals, such as si, ge, al, ti, zr and ta
US4106930A (en) * 1972-02-19 1978-08-15 Asahi Glass Company, Ltd. Solder alloys for soldering difficultly solderable material
JPS54160525A (en) * 1978-06-09 1979-12-19 Sadaji Nagabori Lead alloy for molten plating
US5223321A (en) * 1981-07-17 1993-06-29 British Telecommunications Plc Tape-automated bonding of integrated circuits
US4588657A (en) * 1984-11-01 1986-05-13 Rca Corporation Solder composition
US4622205A (en) * 1985-04-12 1986-11-11 Ibm Corporation Electromigration lifetime increase of lead base alloys
US4670217A (en) * 1985-07-26 1987-06-02 J. W. Harris Company Solder composition
US4654275A (en) * 1985-11-27 1987-03-31 Allied Corporation Storage life of Pb-In-Ag solder foil by Sn addition
US4734256A (en) * 1986-04-21 1988-03-29 Allied-Signal Inc. Wetting of low melting temperature solders by surface active additions
US5134460A (en) * 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
EP0264648B1 (en) * 1986-09-25 1993-05-05 Kabushiki Kaisha Toshiba Method of producing a film carrier
GB2201545B (en) * 1987-01-30 1991-09-11 Tanaka Electronics Ind Method for connecting semiconductor material
JPS63301535A (ja) * 1987-01-30 1988-12-08 Tanaka Electron Ind Co Ltd 半導体材料の接続方法及びそれに用いる接続材料
US4993622A (en) * 1987-04-28 1991-02-19 Texas Instruments Incorporated Semiconductor integrated circuit chip interconnections and methods
EP0288776A3 (en) * 1987-04-28 1989-03-22 Texas Instruments Incorporated Gold alloy wire connection to copper doped aluminum semiconductor circuit interconnection bonding pad
US5019891A (en) * 1988-01-20 1991-05-28 Hitachi, Ltd. Semiconductor device and method of fabricating the same
US4876221A (en) * 1988-05-03 1989-10-24 Matsushita Electric Industrial Co., Ltd. Bonding method
US4950623A (en) * 1988-08-02 1990-08-21 Microelectronics Center Of North Carolina Method of building solder bumps
US5066614A (en) * 1988-11-21 1991-11-19 Honeywell Inc. Method of manufacturing a leadframe having conductive elements preformed with solder bumps
US5071787A (en) * 1989-03-14 1991-12-10 Kabushiki Kaisha Toshiba Semiconductor device utilizing a face-down bonding and a method for manufacturing the same
US5011658A (en) * 1989-05-31 1991-04-30 International Business Machines Corporation Copper doped low melt solder for component assembly and rework
JP2891432B2 (ja) * 1989-12-27 1999-05-17 田中電子工業株式会社 半導体材料の接続方法，それに用いる接続材料及び半導体装置

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DE69032879D1 (de) 1999-02-18
EP0435009A2 (en) 1991-07-03
SG46506A1 (en) 1998-02-20
AU6812490A (en) 1991-07-04
CA2031111A1 (en) 1991-06-28
US5550407A (en) 1996-08-27
AU643721B2 (en) 1993-11-25
US5366692A (en) 1994-11-22
DE69032879T2 (de) 1999-09-16
EP0435009B1 (en) 1999-01-07
EP0435009A3 (en) 1991-09-25
JPH04174527A (ja) 1992-06-22

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