DE69724499D1 - Verbesserungen für oder in Bezug auf Halbleiterspeicheranordnungen - Google Patents
Verbesserungen für oder in Bezug auf HalbleiterspeicheranordnungenInfo
- Publication number
- DE69724499D1 DE69724499D1 DE69724499T DE69724499T DE69724499D1 DE 69724499 D1 DE69724499 D1 DE 69724499D1 DE 69724499 T DE69724499 T DE 69724499T DE 69724499 T DE69724499 T DE 69724499T DE 69724499 D1 DE69724499 D1 DE 69724499D1
- Authority
- DE
- Germany
- Prior art keywords
- respect
- semiconductor memory
- memory devices
- devices
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1501496P | 1996-04-08 | 1996-04-08 | |
US15014 | 1996-04-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69724499D1 true DE69724499D1 (de) | 2003-10-09 |
DE69724499T2 DE69724499T2 (de) | 2004-07-22 |
Family
ID=21769085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69724499T Expired - Lifetime DE69724499T2 (de) | 1996-04-08 | 1997-04-07 | Verbesserungen für oder in Bezug auf Halbleiterspeicheranordnungen |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0801397B1 (de) |
JP (1) | JPH1027476A (de) |
KR (1) | KR100500072B1 (de) |
DE (1) | DE69724499T2 (de) |
TW (1) | TW442790B (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1087659C (zh) * | 1997-10-05 | 2002-07-17 | 中国科学院大连化学物理研究所 | 己内酰胺加氢制六亚甲基亚胺催化剂及其应用 |
JP4895439B2 (ja) * | 2001-06-28 | 2012-03-14 | ルネサスエレクトロニクス株式会社 | スタティック型メモリ |
JP2006209877A (ja) | 2005-01-28 | 2006-08-10 | Nec Electronics Corp | 半導体記憶装置 |
JP2007172715A (ja) * | 2005-12-20 | 2007-07-05 | Fujitsu Ltd | 半導体記憶装置およびその制御方法 |
US7336533B2 (en) | 2006-01-23 | 2008-02-26 | Freescale Semiconductor, Inc. | Electronic device and method for operating a memory circuit |
US7675806B2 (en) | 2006-05-17 | 2010-03-09 | Freescale Semiconductor, Inc. | Low voltage memory device and method thereof |
US7471544B2 (en) * | 2006-05-31 | 2008-12-30 | Kabushiki Kaisha Toshiba | Method and apparatus for avoiding cell data destruction caused by SRAM cell instability |
US7489540B2 (en) | 2007-05-22 | 2009-02-10 | Freescale Semiconductor, Inc. | Bitcell with variable-conductance transfer gate and method thereof |
JP2010277634A (ja) | 2009-05-28 | 2010-12-09 | Toshiba Corp | 半導体記憶装置 |
GB2510828B (en) | 2013-02-13 | 2015-06-03 | Surecore Ltd | Single wordline low-power SRAM cells |
US9799395B2 (en) * | 2015-11-30 | 2017-10-24 | Texas Instruments Incorporated | Sense amplifier in low power and high performance SRAM |
CN112687308A (zh) * | 2020-12-29 | 2021-04-20 | 中国科学院上海微系统与信息技术研究所 | 低功耗静态随机存储器单元以及存储器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422857A (en) * | 1989-11-21 | 1995-06-06 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory unit having overlapping addresses |
KR960001866B1 (ko) * | 1993-05-21 | 1996-02-06 | 현대전자산업주식회사 | 고속 비트라인 센싱 에스램 |
-
1997
- 1997-04-07 DE DE69724499T patent/DE69724499T2/de not_active Expired - Lifetime
- 1997-04-07 JP JP9088323A patent/JPH1027476A/ja active Pending
- 1997-04-07 EP EP97302367A patent/EP0801397B1/de not_active Expired - Lifetime
- 1997-04-07 KR KR1019970012718A patent/KR100500072B1/ko not_active IP Right Cessation
- 1997-04-14 TW TW086104741A patent/TW442790B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69724499T2 (de) | 2004-07-22 |
JPH1027476A (ja) | 1998-01-27 |
EP0801397A2 (de) | 1997-10-15 |
KR100500072B1 (ko) | 2005-09-12 |
KR970071827A (ko) | 1997-11-07 |
TW442790B (en) | 2001-06-23 |
EP0801397B1 (de) | 2003-09-03 |
EP0801397A3 (de) | 1998-07-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |