DE69526630D1 - Verbesserungen in oder in Beziehung auf integrierte Schaltungen - Google Patents
Verbesserungen in oder in Beziehung auf integrierte SchaltungenInfo
- Publication number
- DE69526630D1 DE69526630D1 DE69526630T DE69526630T DE69526630D1 DE 69526630 D1 DE69526630 D1 DE 69526630D1 DE 69526630 T DE69526630 T DE 69526630T DE 69526630 T DE69526630 T DE 69526630T DE 69526630 D1 DE69526630 D1 DE 69526630D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuits
- circuits
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33346194A | 1994-11-02 | 1994-11-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69526630D1 true DE69526630D1 (de) | 2002-06-13 |
DE69526630T2 DE69526630T2 (de) | 2002-11-28 |
Family
ID=23302900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69526630T Expired - Lifetime DE69526630T2 (de) | 1994-11-02 | 1995-11-02 | Verbesserungen in oder in Beziehung auf integrierte Schaltungen |
Country Status (4)
Country | Link |
---|---|
US (1) | US6150722A (de) |
EP (1) | EP0714128B1 (de) |
JP (1) | JP4263255B2 (de) |
DE (1) | DE69526630T2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6372586B1 (en) * | 1995-10-04 | 2002-04-16 | Texas Instruments Incorporated | Method for LDMOS transistor with thick copper interconnect |
US6140702A (en) * | 1996-05-31 | 2000-10-31 | Texas Instruments Incorporated | Plastic encapsulation for integrated circuits having plated copper top surface level interconnect |
JPH1022299A (ja) * | 1996-07-08 | 1998-01-23 | Oki Electric Ind Co Ltd | 半導体集積回路 |
US6140150A (en) * | 1997-05-28 | 2000-10-31 | Texas Instruments Incorporated | Plastic encapsulation for integrated circuits having plated copper top surface level interconnect |
DE19830179B4 (de) * | 1998-07-06 | 2009-01-08 | Institut für Mikroelektronik Stuttgart Stiftung des öffentlichen Rechts | MOS-Transistor für eine Bildzelle |
US6051456A (en) * | 1998-12-21 | 2000-04-18 | Motorola, Inc. | Semiconductor component and method of manufacture |
US20020071293A1 (en) * | 2000-07-13 | 2002-06-13 | Eden Richard C. | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods a of forming power transistor |
JP2002164437A (ja) * | 2000-07-27 | 2002-06-07 | Texas Instruments Inc | ボンディングおよび電流配分を分散したパワー集積回路および方法 |
US6646347B2 (en) * | 2001-11-30 | 2003-11-11 | Motorola, Inc. | Semiconductor power device and method of formation |
US6744117B2 (en) | 2002-02-28 | 2004-06-01 | Motorola, Inc. | High frequency semiconductor device and method of manufacture |
SE522910C2 (sv) * | 2002-06-03 | 2004-03-16 | Ericsson Telefon Ab L M | Integrerad krets för reducering av strömdensitet i en transistor innefattande sammanflätade kollektor-, emitter- och styrfingrar |
US6972464B2 (en) * | 2002-10-08 | 2005-12-06 | Great Wall Semiconductor Corporation | Power MOSFET |
US6897561B2 (en) * | 2003-06-06 | 2005-05-24 | Semiconductor Components Industries, Llc | Semiconductor power device having a diamond shaped metal interconnect scheme |
DE10360513B4 (de) * | 2003-12-22 | 2005-10-06 | Infineon Technologies Ag | Integrierter Halbleiterschaltungschip mit verbesserter Hochstrom- und Wärmeleitungsfähigkeit |
DE102006050087A1 (de) * | 2006-10-24 | 2008-04-30 | Austriamicrosystems Ag | Halbleiterkörper und Verfahren zum Entwurf eines Halbleiterkörpers mit einer Anschlussleitung |
US7964934B1 (en) | 2007-05-22 | 2011-06-21 | National Semiconductor Corporation | Fuse target and method of forming the fuse target in a copper process flow |
US8030733B1 (en) | 2007-05-22 | 2011-10-04 | National Semiconductor Corporation | Copper-compatible fuse target |
US7732848B2 (en) * | 2007-05-31 | 2010-06-08 | Infineon Technologies Ag | Power semiconductor device with improved heat dissipation |
US7586132B2 (en) | 2007-06-06 | 2009-09-08 | Micrel, Inc. | Power FET with low on-resistance using merged metal layers |
JP2010530619A (ja) | 2007-06-18 | 2010-09-09 | ミクロガン ゲーエムベーハー | 垂直コンタクト部を備える電気回路 |
US8169081B1 (en) | 2007-12-27 | 2012-05-01 | Volterra Semiconductor Corporation | Conductive routings in integrated circuits using under bump metallization |
US7709956B2 (en) * | 2008-09-15 | 2010-05-04 | National Semiconductor Corporation | Copper-topped interconnect structure that has thin and thick copper traces and method of forming the copper-topped interconnect structure |
US20100072624A1 (en) * | 2008-09-19 | 2010-03-25 | United Microelectronics Corp. | Metal interconnection |
US9972624B2 (en) | 2013-08-23 | 2018-05-15 | Qualcomm Incorporated | Layout construction for addressing electromigration |
US9786663B2 (en) | 2013-08-23 | 2017-10-10 | Qualcomm Incorporated | Layout construction for addressing electromigration |
JP6295065B2 (ja) | 2013-11-20 | 2018-03-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9812380B2 (en) | 2014-05-22 | 2017-11-07 | Microchip Technology Incorporated | Bumps bonds formed as metal line interconnects in a semiconductor device |
US9553187B2 (en) * | 2014-12-11 | 2017-01-24 | Nxp Usa, Inc. | Semiconductor device and related fabrication methods |
DE102017102146B3 (de) * | 2017-02-03 | 2018-02-15 | Elmos Semiconductor Aktiengesellschaft | MOS-Transistor mit erhöhter Pulsbelastbarkeit |
CN111081760B (zh) * | 2019-12-13 | 2023-07-18 | 联合微电子中心有限责任公司 | 一种检测TSV中Cu扩散的器件结构及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR96113E (fr) * | 1967-12-06 | 1972-05-19 | Ibm | Dispositif semi-conducteur. |
JPS594050A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置 |
US4843453A (en) * | 1985-05-10 | 1989-06-27 | Texas Instruments Incorporated | Metal contacts and interconnections for VLSI devices |
FR2616966B1 (fr) * | 1987-06-22 | 1989-10-27 | Thomson Semiconducteurs | Structure de transistors mos de puissance |
JP2659714B2 (ja) * | 1987-07-21 | 1997-09-30 | 株式会社日立製作所 | 半導体集積回路装置 |
US4931323A (en) * | 1987-12-10 | 1990-06-05 | Texas Instruments Incorporated | Thick film copper conductor patterning by laser |
US5191405A (en) * | 1988-12-23 | 1993-03-02 | Matsushita Electric Industrial Co., Ltd. | Three-dimensional stacked lsi |
US5272098A (en) * | 1990-11-21 | 1993-12-21 | Texas Instruments Incorporated | Vertical and lateral insulated-gate, field-effect transistors, systems and methods |
-
1995
- 1995-10-04 US US08/538,873 patent/US6150722A/en not_active Expired - Lifetime
- 1995-11-02 EP EP95307846A patent/EP0714128B1/de not_active Expired - Lifetime
- 1995-11-02 JP JP32254495A patent/JP4263255B2/ja not_active Expired - Fee Related
- 1995-11-02 DE DE69526630T patent/DE69526630T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69526630T2 (de) | 2002-11-28 |
EP0714128A2 (de) | 1996-05-29 |
EP0714128A3 (de) | 1996-07-17 |
JP4263255B2 (ja) | 2009-05-13 |
US6150722A (en) | 2000-11-21 |
EP0714128B1 (de) | 2002-05-08 |
JPH08255910A (ja) | 1996-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |