DE69622115D1 - Verbesserungen an nichtflüchtigen Speicheranordnungen oder bezüglich derselben - Google Patents

Verbesserungen an nichtflüchtigen Speicheranordnungen oder bezüglich derselben

Info

Publication number
DE69622115D1
DE69622115D1 DE69622115T DE69622115T DE69622115D1 DE 69622115 D1 DE69622115 D1 DE 69622115D1 DE 69622115 T DE69622115 T DE 69622115T DE 69622115 T DE69622115 T DE 69622115T DE 69622115 D1 DE69622115 D1 DE 69622115D1
Authority
DE
Germany
Prior art keywords
volatile memory
memory devices
devices
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69622115T
Other languages
English (en)
Other versions
DE69622115T2 (de
Inventor
Mehrad Freidoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69622115D1 publication Critical patent/DE69622115D1/de
Application granted granted Critical
Publication of DE69622115T2 publication Critical patent/DE69622115T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
DE69622115T 1995-09-26 1996-09-24 Verbesserungen an nichtflüchtigen Speicheranordnungen oder bezüglich derselben Expired - Lifetime DE69622115T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/533,981 US5659500A (en) 1995-09-26 1995-09-26 Nonvolatile memory array with compatible vertical source lines

Publications (2)

Publication Number Publication Date
DE69622115D1 true DE69622115D1 (de) 2002-08-08
DE69622115T2 DE69622115T2 (de) 2003-03-13

Family

ID=24128215

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69622115T Expired - Lifetime DE69622115T2 (de) 1995-09-26 1996-09-24 Verbesserungen an nichtflüchtigen Speicheranordnungen oder bezüglich derselben

Country Status (6)

Country Link
US (1) US5659500A (de)
EP (1) EP0766316B1 (de)
JP (1) JPH09129854A (de)
KR (1) KR100401433B1 (de)
DE (1) DE69622115T2 (de)
TW (1) TW344138B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6026017A (en) * 1997-04-11 2000-02-15 Programmable Silicon Solutions Compact nonvolatile memory
US6765257B1 (en) * 1997-07-23 2004-07-20 Texas Instruments Incorporated Implanted vertical source-line under straight stack for flash eprom
US6033955A (en) * 1998-09-23 2000-03-07 Advanced Micro Devices, Inc. Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture
US6659939B2 (en) * 1998-11-20 2003-12-09 Intuitive Surgical, Inc. Cooperative minimally invasive telesurgical system
US6661691B2 (en) 2002-04-02 2003-12-09 Hewlett-Packard Development Company, L.P. Interconnection structure and methods
US20030183868A1 (en) * 2002-04-02 2003-10-02 Peter Fricke Memory structures
US6643159B2 (en) 2002-04-02 2003-11-04 Hewlett-Packard Development Company, L.P. Cubic memory array
US6967350B2 (en) * 2002-04-02 2005-11-22 Hewlett-Packard Development Company, L.P. Memory structures
US6940085B2 (en) 2002-04-02 2005-09-06 Hewlett-Packard Development Company, I.P. Memory structures
JP2004152878A (ja) * 2002-10-29 2004-05-27 Toshiba Corp 半導体記憶装置及びその製造方法
US6858883B2 (en) * 2003-06-03 2005-02-22 Hewlett-Packard Development Company, L.P. Partially processed tunnel junction control element
US7323726B1 (en) * 2003-09-09 2008-01-29 Spansion Llc Method and apparatus for coupling to a common line in an array
JP5237554B2 (ja) 2004-10-29 2013-07-17 スパンション エルエルシー 半導体装置の製造方法
JP4733150B2 (ja) * 2005-02-11 2011-07-27 グラフィック パッケージング インターナショナル インコーポレイテッド 噛み合い仕切板を有するカートン
US7488657B2 (en) 2005-06-17 2009-02-10 Spansion Llc Method and system for forming straight word lines in a flash memory array
EP1804289B1 (de) 2005-12-30 2011-11-23 STMicroelectronics Srl In ein Halbleitersubstrat integrierte elektronische Vorrichtung mit nichtflüchtigem Speicher
EP1804292A1 (de) * 2005-12-30 2007-07-04 STMicroelectronics S.r.l. Nichtflüchtiger Speicher und Verfahren zu deren Herstellung
JP2010056443A (ja) * 2008-08-29 2010-03-11 Toshiba Corp 不揮発性半導体メモリ及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108247A (en) * 1976-12-27 1978-09-20 Texas Instruments Inc Electrically programmable floating gate semiconductor memory
JPH01108778A (ja) * 1987-10-21 1989-04-26 Mitsubishi Electric Corp 半導体記憶装置
US4888735A (en) * 1987-12-30 1989-12-19 Elite Semiconductor & Systems Int'l., Inc. ROM cell and array configuration
JP2713115B2 (ja) * 1993-10-06 1998-02-16 日本電気株式会社 不揮発性半導体記憶装置の製造方法
EP0694211B1 (de) * 1994-02-17 2001-06-20 National Semiconductor Corporation Verfahren zur reduzierung den abstandes zwischen den horizontalen benachbarten schwebenden gates einer flash eprom anordnung

Also Published As

Publication number Publication date
TW344138B (en) 1998-11-01
EP0766316B1 (de) 2002-07-03
US5659500A (en) 1997-08-19
JPH09129854A (ja) 1997-05-16
KR970018632A (ko) 1997-04-30
KR100401433B1 (ko) 2004-03-20
DE69622115T2 (de) 2003-03-13
EP0766316A1 (de) 1997-04-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition