DE69431789T2 - Verbesserungen in oder in Bezug auf EEPROMs - Google Patents

Verbesserungen in oder in Bezug auf EEPROMs

Info

Publication number
DE69431789T2
DE69431789T2 DE69431789T DE69431789T DE69431789T2 DE 69431789 T2 DE69431789 T2 DE 69431789T2 DE 69431789 T DE69431789 T DE 69431789T DE 69431789 T DE69431789 T DE 69431789T DE 69431789 T2 DE69431789 T2 DE 69431789T2
Authority
DE
Germany
Prior art keywords
eeproms
relation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69431789T
Other languages
English (en)
Other versions
DE69431789D1 (de
Inventor
Ulrich Kaiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Deutschland GmbH
Original Assignee
Texas Instruments Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Deutschland GmbH filed Critical Texas Instruments Deutschland GmbH
Publication of DE69431789D1 publication Critical patent/DE69431789D1/de
Application granted granted Critical
Publication of DE69431789T2 publication Critical patent/DE69431789T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
DE69431789T 1993-09-29 1994-09-28 Verbesserungen in oder in Bezug auf EEPROMs Expired - Lifetime DE69431789T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/129,214 US5418751A (en) 1993-09-29 1993-09-29 Variable frequency oscillator controlled EEPROM charge pump

Publications (2)

Publication Number Publication Date
DE69431789D1 DE69431789D1 (de) 2003-01-09
DE69431789T2 true DE69431789T2 (de) 2003-09-18

Family

ID=22438925

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69431789T Expired - Lifetime DE69431789T2 (de) 1993-09-29 1994-09-28 Verbesserungen in oder in Bezug auf EEPROMs

Country Status (3)

Country Link
US (1) US5418751A (de)
EP (1) EP0663668B1 (de)
DE (1) DE69431789T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10351050A1 (de) * 2003-10-31 2005-06-09 Infineon Technologies Ag Integrierter Ladungspumpen-Spannungswandler

Families Citing this family (25)

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DE4324853C1 (de) * 1993-07-23 1994-09-22 Siemens Ag Spannungserzeugungsschaltung
US5752011A (en) 1994-06-20 1998-05-12 Thomas; C. Douglas Method and system for controlling a processor's clock frequency in accordance with the processor's temperature
US7167993B1 (en) 1994-06-20 2007-01-23 Thomas C Douglass Thermal and power management for computer systems
JP3075957B2 (ja) * 1995-05-30 2000-08-14 株式会社東芝 コンピュータシステム
KR0179842B1 (ko) * 1995-09-27 1999-04-01 문정환 전류원회로
US5793260A (en) * 1996-04-26 1998-08-11 3Com Corporation Current controlled oscillator with voltage independent capacitance
US5654677A (en) * 1996-06-24 1997-08-05 Ericsson Inc. Relaxation oscillator of reduced complexity using CMOS equivalent of a four-layer diode
US5940786A (en) * 1996-11-22 1999-08-17 Eaton Corporation Temperature regulated clock rate for microprocessors
DE19782260T1 (de) * 1997-12-25 2000-02-10 Advantest Corp Leckstrom-Korrekturschaltung
US6515919B1 (en) * 1998-08-10 2003-02-04 Applied Wireless Identifications Group, Inc. Radio frequency powered voltage pump for programming EEPROM
US8538801B2 (en) 1999-02-19 2013-09-17 Exxonmobile Research & Engineering Company System and method for processing financial transactions
AU6609300A (en) 1999-07-27 2001-02-13 Alfred E. Mann Foundation For Scientific Research Voltage control circuitry for charging output capacitor
US6205074B1 (en) * 2000-02-29 2001-03-20 Advanced Micro Devices, Inc. Temperature-compensated bias generator
EP1184961A1 (de) * 2000-08-21 2002-03-06 Motorola, Inc. Verfahren und Vorrichtung zur Reduzierung von Geräusch in einem Schaltleistungsverwaltungssystem
KR100665400B1 (ko) * 2000-10-26 2007-01-04 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그의 프로그램 방법
AU2003226322A1 (en) * 2003-04-10 2004-11-26 Chen, Chung-Chin Chip oscillator module and its verification method
US20040265171A1 (en) * 2003-06-27 2004-12-30 Pugia Michael J. Method for uniform application of fluid into a reactive reagent area
DE102004032547A1 (de) * 2004-07-06 2006-02-02 Atmel Germany Gmbh Transponder mit einer Taktversorgungseinheit
FR2874467B1 (fr) * 2004-08-17 2006-11-17 Atmel Corp Circuit pour un generateur d'eeprom haute tension
JP4544458B2 (ja) * 2004-11-11 2010-09-15 ルネサスエレクトロニクス株式会社 半導体装置
US7502921B2 (en) 2005-08-02 2009-03-10 Sandisk Corporation Situation sensitive memory performance
JP2010267368A (ja) * 2009-04-17 2010-11-25 Semiconductor Energy Lab Co Ltd 半導体記憶装置
JP5742593B2 (ja) * 2011-08-30 2015-07-01 ミツミ電機株式会社 半導体集積回路、保護回路及び電池パック
US20130221932A1 (en) * 2012-02-29 2013-08-29 Pantech Co., Ltd. Apparatus and method for reducing leakage current
KR20180079903A (ko) 2017-01-03 2018-07-11 삼성전자주식회사 누설 전류 감지 장치 및 메모리 장치

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US3725789A (en) * 1970-12-21 1973-04-03 Sperry Rand Corp Temperature controlled clocking of logic circuits
US3701004A (en) * 1971-05-13 1972-10-24 Us Army Circuit for generating a repeatable voltage as a function of temperature
US3713033A (en) * 1971-09-01 1973-01-23 Collins Radio Co Digitally temperature compensated oscillator
JPS5694654A (en) * 1979-12-27 1981-07-31 Toshiba Corp Generating circuit for substrate bias voltage
US5197033A (en) * 1986-07-18 1993-03-23 Hitachi, Ltd. Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
JPS6432489A (en) * 1987-07-27 1989-02-02 Matsushita Electronics Corp Memory device
DE301127T1 (de) * 1987-07-31 1989-08-24 Texas Instruments Deutschland Gmbh, 8050 Freising, De Transponder-anordnung.
JPH03108196A (ja) * 1989-09-20 1991-05-08 Fujitsu Ltd 電気的消去・書込み可能型不揮発性半導体記憶装置
US5200654A (en) * 1991-11-20 1993-04-06 National Semiconductor Corporation Trim correction circuit with temperature coefficient compensation
NL9200057A (nl) * 1992-01-14 1993-08-02 Sierra Semiconductor Bv Terugkoppelnetwerk voor cmos hoogspanningsgenerator om (e)eprom-geheugen cellen te programmeren.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10351050A1 (de) * 2003-10-31 2005-06-09 Infineon Technologies Ag Integrierter Ladungspumpen-Spannungswandler

Also Published As

Publication number Publication date
DE69431789D1 (de) 2003-01-09
EP0663668A2 (de) 1995-07-19
EP0663668A3 (de) 1996-07-10
US5418751A (en) 1995-05-23
EP0663668B1 (de) 2002-11-27

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