DE69529368D1 - Leitfähige Barriereschicht aus einem amorphen Nitrid als Elektrode für Material mit hoher dielektrischen Konstante - Google Patents

Leitfähige Barriereschicht aus einem amorphen Nitrid als Elektrode für Material mit hoher dielektrischen Konstante

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Publication number
DE69529368D1
DE69529368D1 DE69529368T DE69529368T DE69529368D1 DE 69529368 D1 DE69529368 D1 DE 69529368D1 DE 69529368 T DE69529368 T DE 69529368T DE 69529368 T DE69529368 T DE 69529368T DE 69529368 D1 DE69529368 D1 DE 69529368D1
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DE
Germany
Prior art keywords
electrode
barrier layer
dielectric constant
layer made
high dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69529368T
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English (en)
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DE69529368T2 (de
Inventor
Scott R Summerfelt
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Texas Instruments Inc
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Texas Instruments Inc
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Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
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Publication of DE69529368D1 publication Critical patent/DE69529368D1/de
Publication of DE69529368T2 publication Critical patent/DE69529368T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Non-Volatile Memory (AREA)
DE69529368T 1994-08-01 1995-07-28 Leitfähige Barriereschicht aus einem amorphen Nitrid als Elektrode für Material mit hoher dielektrischen Konstante Expired - Lifetime DE69529368T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/283,441 US5585300A (en) 1994-08-01 1994-08-01 Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes

Publications (2)

Publication Number Publication Date
DE69529368D1 true DE69529368D1 (de) 2003-02-20
DE69529368T2 DE69529368T2 (de) 2003-09-04

Family

ID=23086089

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69529368T Expired - Lifetime DE69529368T2 (de) 1994-08-01 1995-07-28 Leitfähige Barriereschicht aus einem amorphen Nitrid als Elektrode für Material mit hoher dielektrischen Konstante

Country Status (6)

Country Link
US (3) US5585300A (de)
EP (1) EP0697720B1 (de)
JP (1) JPH08116032A (de)
KR (1) KR100341555B1 (de)
DE (1) DE69529368T2 (de)
TW (1) TW283790B (de)

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US5665628A (en) 1997-09-09
JPH08116032A (ja) 1996-05-07
US5585300A (en) 1996-12-17
DE69529368T2 (de) 2003-09-04
TW283790B (de) 1996-08-21
EP0697720A1 (de) 1996-02-21
EP0697720B1 (de) 2003-01-15
KR960009197A (ko) 1996-03-22
US5793057A (en) 1998-08-11

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