DE69529367D1 - Halbleiterspeicheranordnung und hochspannungsschaltende Schaltung - Google Patents
Halbleiterspeicheranordnung und hochspannungsschaltende SchaltungInfo
- Publication number
- DE69529367D1 DE69529367D1 DE69529367T DE69529367T DE69529367D1 DE 69529367 D1 DE69529367 D1 DE 69529367D1 DE 69529367 T DE69529367 T DE 69529367T DE 69529367 T DE69529367 T DE 69529367T DE 69529367 D1 DE69529367 D1 DE 69529367D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- switching circuit
- voltage switching
- memory arrangement
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21803194 | 1994-08-19 | ||
JP19582394A JP3197161B2 (ja) | 1994-08-19 | 1994-08-19 | 高電圧切り換え回路 |
JP21803194A JP3176011B2 (ja) | 1994-08-19 | 1994-08-19 | 半導体記憶装置 |
JP19582394 | 1994-08-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69529367D1 true DE69529367D1 (de) | 2003-02-20 |
DE69529367T2 DE69529367T2 (de) | 2004-01-22 |
Family
ID=26509369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69529367T Expired - Lifetime DE69529367T2 (de) | 1994-08-19 | 1995-08-18 | Halbleiterspeicheranordnung und hochspannungsschaltende Schaltung |
Country Status (4)
Country | Link |
---|---|
US (3) | US5708606A (de) |
EP (1) | EP0697702B1 (de) |
KR (1) | KR100221939B1 (de) |
DE (1) | DE69529367T2 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6781883B1 (en) * | 1997-03-20 | 2004-08-24 | Altera Corporation | Apparatus and method for margin testing single polysilicon EEPROM cells |
JPH1166874A (ja) * | 1997-08-08 | 1999-03-09 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JPH1173791A (ja) * | 1997-08-28 | 1999-03-16 | Sharp Corp | 不揮発性半導体記憶装置 |
JP3558510B2 (ja) * | 1997-10-30 | 2004-08-25 | シャープ株式会社 | 不揮発性半導体記憶装置 |
JPH11177071A (ja) * | 1997-12-11 | 1999-07-02 | Toshiba Corp | 不揮発性半導体記憶装置 |
US6069519A (en) * | 1998-06-10 | 2000-05-30 | Integrated Silicon Solution Inc. | Leakage improved charge pump for nonvolatile memory device |
JP3688899B2 (ja) * | 1998-09-08 | 2005-08-31 | 株式会社東芝 | 半導体集積回路装置 |
KR100328359B1 (ko) * | 1999-06-22 | 2002-03-13 | 윤종용 | 기판 전압 바운싱을 최소화할 수 있는 플래시 메모리 장치 및그것의 프로그램 방법 |
US6550028B1 (en) * | 1999-10-19 | 2003-04-15 | Advanced Micro Devices, Inc. | Array VT mode implementation for a simultaneous operation flash memory device |
JP3913952B2 (ja) * | 1999-12-28 | 2007-05-09 | 株式会社東芝 | 半導体記憶装置 |
EP1118867B1 (de) * | 2000-01-18 | 2005-10-19 | STMicroelectronics S.r.l. | Verfahren zur Prüfung einer CMOS integrierten Schaltung |
US6618289B2 (en) | 2001-10-29 | 2003-09-09 | Atmel Corporation | High voltage bit/column latch for Vcc operation |
US6977850B2 (en) * | 2001-12-27 | 2005-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device having switch circuit to supply voltage |
US6714458B2 (en) * | 2002-02-11 | 2004-03-30 | Micron Technology, Inc. | High voltage positive and negative two-phase discharge system and method for channel erase in flash memory devices |
US6570811B1 (en) * | 2002-04-04 | 2003-05-27 | Oki Electric Industry Co., Ltd. | Writing operation control circuit and semiconductor memory using the same |
JP2004226115A (ja) * | 2003-01-20 | 2004-08-12 | Elpida Memory Inc | 半導体装置及びその試験方法 |
US7046555B2 (en) * | 2003-09-17 | 2006-05-16 | Sandisk Corporation | Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance |
JP2005243164A (ja) * | 2004-02-27 | 2005-09-08 | Toshiba Corp | 半導体記憶装置 |
JP2007102865A (ja) * | 2005-09-30 | 2007-04-19 | Toshiba Corp | 半導体集積回路装置 |
JP4199765B2 (ja) * | 2005-12-02 | 2008-12-17 | マイクロン テクノロジー,インコーポレイテッド | 高電圧スイッチング回路 |
US7705600B1 (en) * | 2006-02-13 | 2010-04-27 | Cypress Semiconductor Corporation | Voltage stress testing of core blocks and regulator transistors |
JP4818024B2 (ja) * | 2006-08-23 | 2011-11-16 | 株式会社東芝 | 半導体記憶装置 |
JP2008146772A (ja) * | 2006-12-12 | 2008-06-26 | Toshiba Corp | 半導体記憶装置 |
JP2009043358A (ja) * | 2007-08-10 | 2009-02-26 | Toshiba Corp | 半導体記憶装置 |
US8000151B2 (en) * | 2008-01-10 | 2011-08-16 | Micron Technology, Inc. | Semiconductor memory column decoder device and method |
US8125829B2 (en) | 2008-05-02 | 2012-02-28 | Micron Technology, Inc. | Biasing system and method |
IT1392921B1 (it) * | 2009-02-11 | 2012-04-02 | St Microelectronics Srl | Regioni allocabili dinamicamente in memorie non volatili |
US8593869B2 (en) | 2011-07-27 | 2013-11-26 | Micron Technology, Inc. | Apparatuses and methods including memory array and data line architecture |
US8792263B2 (en) | 2011-12-22 | 2014-07-29 | Micron Technology, Inc. | Apparatuses and methods including memory with top and bottom data lines |
US8797804B2 (en) | 2012-07-30 | 2014-08-05 | Micron Technology, Inc. | Vertical memory with body connection |
US8780631B2 (en) | 2012-08-21 | 2014-07-15 | Micron Technology, Inc. | Memory devices having data lines included in top and bottom conductive lines |
US9595533B2 (en) | 2012-08-30 | 2017-03-14 | Micron Technology, Inc. | Memory array having connections going through control gates |
JP5626812B2 (ja) * | 2012-08-30 | 2014-11-19 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
US9064578B2 (en) | 2012-12-18 | 2015-06-23 | Micron Technology, Inc. | Enable/disable of memory chunks during memory access |
US9285997B2 (en) | 2013-10-30 | 2016-03-15 | Intel Corporation | Independently selective tile group access with data structuring |
JP2017174484A (ja) * | 2016-03-25 | 2017-09-28 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US10360948B2 (en) * | 2017-06-26 | 2019-07-23 | Samsung Electronics Co., Ltd. | Memory device and operating method of memory device |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4381552A (en) * | 1978-12-08 | 1983-04-26 | Motorola Inc. | Stanby mode controller utilizing microprocessor |
US4673829A (en) * | 1982-02-08 | 1987-06-16 | Seeq Technology, Inc. | Charge pump for providing programming voltage to the word lines in a semiconductor memory array |
US5155701A (en) * | 1985-02-08 | 1992-10-13 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of testing the same |
JPS6252797A (ja) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5101381A (en) * | 1987-08-31 | 1992-03-31 | Oki Electric Industry Co., Ltd. | Control circuit for EEPROM |
NL8800408A (nl) * | 1988-02-18 | 1989-09-18 | Philips Nv | Geintegreerde geheugenschakeling met een hoogspanningsschakelaar tussen een programmeerspanningsgenerator en een wisbaar programmeerbaar geheugen, hoogspanningsschakelaar geschikt voor toepassing in een dergelijke geheugenschakeling. |
JP2590574B2 (ja) * | 1989-12-06 | 1997-03-12 | 松下電器産業株式会社 | 高電圧スイッチング回路 |
US5132567A (en) * | 1991-04-18 | 1992-07-21 | International Business Machines Corporation | Low threshold BiCMOS circuit |
US5245572A (en) * | 1991-07-30 | 1993-09-14 | Intel Corporation | Floating gate nonvolatile memory with reading while writing capability |
JPH05102438A (ja) * | 1991-10-04 | 1993-04-23 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JP3158542B2 (ja) * | 1991-10-09 | 2001-04-23 | 日本電気株式会社 | 半導体メモリ装置 |
US5313429A (en) * | 1992-02-14 | 1994-05-17 | Catalyst Semiconductor, Inc. | Memory circuit with pumped voltage for erase and program operations |
US5420822A (en) * | 1992-03-31 | 1995-05-30 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
US5267218A (en) * | 1992-03-31 | 1993-11-30 | Intel Corporation | Nonvolatile memory card with a single power supply input |
US5422855A (en) * | 1992-03-31 | 1995-06-06 | Intel Corporation | Flash memory card with all zones chip enable circuitry |
JP2735435B2 (ja) * | 1992-06-01 | 1998-04-02 | 三菱電機株式会社 | メモリカードのメモリ制御用回路 |
JP3526894B2 (ja) * | 1993-01-12 | 2004-05-17 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
US5381369A (en) * | 1993-02-05 | 1995-01-10 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device using a command control system |
US5455784A (en) * | 1993-08-09 | 1995-10-03 | Nec Corporation | Associative memory device with small memory cells selectively storing data bits and don't care bits |
JP3919213B2 (ja) * | 1993-09-30 | 2007-05-23 | マクロニクス インターナショナル カンパニイ リミテッド | 不揮発性状態書込みを備えた自動テスト回路 |
JPH07235193A (ja) * | 1993-12-28 | 1995-09-05 | Toshiba Corp | 半導体記憶装置 |
GB9417266D0 (en) * | 1994-08-26 | 1994-10-19 | Inmos Ltd | Testing a non-volatile memory |
US5790459A (en) * | 1995-08-04 | 1998-08-04 | Micron Quantum Devices, Inc. | Memory circuit for performing threshold voltage tests on cells of a memory array |
-
1995
- 1995-08-18 EP EP95305788A patent/EP0697702B1/de not_active Expired - Lifetime
- 1995-08-18 DE DE69529367T patent/DE69529367T2/de not_active Expired - Lifetime
- 1995-08-19 KR KR1019950025550A patent/KR100221939B1/ko not_active IP Right Cessation
-
1997
- 1997-01-17 US US08/773,893 patent/US5708606A/en not_active Expired - Lifetime
- 1997-09-30 US US08/941,370 patent/US5828621A/en not_active Expired - Lifetime
-
1998
- 1998-10-08 US US09/168,379 patent/US5909398A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5909398A (en) | 1999-06-01 |
EP0697702B1 (de) | 2003-01-15 |
DE69529367T2 (de) | 2004-01-22 |
US5828621A (en) | 1998-10-27 |
US5708606A (en) | 1998-01-13 |
EP0697702A2 (de) | 1996-02-21 |
KR100221939B1 (ko) | 1999-09-15 |
EP0697702A3 (de) | 1999-01-07 |
KR960008848A (ko) | 1996-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |