DE69637215D1 - Integrierte Hochspannungsschaltung und Pegelverschiebungseinheit - Google Patents

Integrierte Hochspannungsschaltung und Pegelverschiebungseinheit

Info

Publication number
DE69637215D1
DE69637215D1 DE69637215T DE69637215T DE69637215D1 DE 69637215 D1 DE69637215 D1 DE 69637215D1 DE 69637215 T DE69637215 T DE 69637215T DE 69637215 T DE69637215 T DE 69637215T DE 69637215 D1 DE69637215 D1 DE 69637215D1
Authority
DE
Germany
Prior art keywords
high voltage
voltage circuit
level shift
shift unit
integrated high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69637215T
Other languages
English (en)
Other versions
DE69637215T2 (de
Inventor
Tatsuhiko Fujihira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Application granted granted Critical
Publication of DE69637215D1 publication Critical patent/DE69637215D1/de
Publication of DE69637215T2 publication Critical patent/DE69637215T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inverter Devices (AREA)
DE1996637215 1995-06-28 1996-06-27 Integrierte Hochspannungsschaltung und Pegelverschiebungseinheit Expired - Lifetime DE69637215T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP16213995 1995-06-28
JP16213995 1995-06-28
JP25847295A JP3228093B2 (ja) 1995-06-28 1995-10-05 高耐圧ｉｃ
JP25847295 1995-10-05

Publications (2)

Publication Number Publication Date
DE69637215D1 true DE69637215D1 (de) 2007-10-04
DE69637215T2 DE69637215T2 (de) 2008-05-15

Family

ID=26488032

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1996637215 Expired - Lifetime DE69637215T2 (de) 1995-06-28 1996-06-27 Integrierte Hochspannungsschaltung und Pegelverschiebungseinheit

Country Status (4)

Country Link
US (1) US5736774A (de)
EP (1) EP0751572B1 (de)
JP (1) JP3228093B2 (de)
DE (1) DE69637215T2 (de)

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US6300796B1 (en) 1999-02-19 2001-10-09 Zilog, Inc. High voltage PMOS level shifter
JP4622048B2 (ja) * 1999-12-13 2011-02-02 富士電機システムズ株式会社 半導体装置
US6489653B2 (en) * 1999-12-27 2002-12-03 Kabushiki Kaisha Toshiba Lateral high-breakdown-voltage transistor
JP3778061B2 (ja) * 2001-11-19 2006-05-24 富士電機デバイステクノロジー株式会社 高耐圧ｉｃの製造方法
US6744112B2 (en) * 2002-10-01 2004-06-01 International Business Machines Corporation Multiple chip guard rings for integrated circuit and chip guard ring interconnect
KR100894320B1 (ko) * 2003-03-24 2009-04-24 페어차일드코리아반도체 주식회사 고전압 집적 회로에 의해 게이트가 구동되는 스위칭소자를 포함하는 인버터 회로
JP4397697B2 (ja) * 2004-01-15 2010-01-13 三菱電機株式会社 出力回路
JP4706381B2 (ja) * 2004-10-22 2011-06-22 株式会社デンソー 半導体装置
US20060086974A1 (en) * 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
JP4844089B2 (ja) * 2005-04-19 2011-12-21 株式会社デンソー 半導体装置
JP2006332217A (ja) * 2005-05-25 2006-12-07 Hitachi Ltd 高耐圧ｐ型ＭＯＳＦＥＴ及びそれを用いた電力変換装置
JP5017926B2 (ja) * 2005-09-28 2012-09-05 株式会社デンソー 半導体装置およびその製造方法
JP5003043B2 (ja) * 2005-10-26 2012-08-15 株式会社デンソー 半導体装置
JP4525629B2 (ja) * 2006-04-27 2010-08-18 富士電機システムズ株式会社 レベルシフタ
US7829928B2 (en) * 2006-06-26 2010-11-09 System General Corp. Semiconductor structure of a high side driver and method for manufacturing the same
US7759769B2 (en) * 2006-07-20 2010-07-20 System General Corp. Semiconductor structure of a high side driver
US7589393B2 (en) * 2006-07-25 2009-09-15 System General Corporation Semiconductor structure of a high side driver for two high voltage nodes with partially linked deep wells and method for manufacturing the same
US7834575B2 (en) * 2008-04-01 2010-11-16 International Rectifier Corporation Gate-driver IC with HV-isolation, especially hybrid electric vehicle motor drive concept
JP2010110093A (ja) * 2008-10-29 2010-05-13 Fuji Electric Systems Co Ltd 半導体装置
JP5499915B2 (ja) * 2009-06-10 2014-05-21 富士電機株式会社 高耐圧半導体装置
JP5588666B2 (ja) * 2009-12-22 2014-09-10 矢崎総業株式会社 混成回路
US8618627B2 (en) 2010-06-24 2013-12-31 Fairchild Semiconductor Corporation Shielded level shift transistor
JP5698615B2 (ja) * 2011-06-28 2015-04-08 矢崎総業株式会社 混成回路
JP5842223B2 (ja) 2012-02-14 2016-01-13 富士電機株式会社 ドライバ回路
JP5825443B2 (ja) * 2012-09-18 2015-12-02 富士電機株式会社 半導体装置およびそれを用いた電力変換装置
CN102945838A (zh) * 2012-11-05 2013-02-27 电子科技大学 一种高压互连结构
JP6084056B2 (ja) * 2013-02-06 2017-02-22 エスアイアイ・セミコンダクタ株式会社 充放電制御回路及びバッテリ装置
JP2015119521A (ja) * 2013-12-17 2015-06-25 サンケン電気株式会社 半導体装置及びスイッチング回路
JP6228850B2 (ja) * 2014-01-10 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
US9654097B2 (en) 2014-01-29 2017-05-16 Panasonic Intellectual Property Management Co., Ltd. Signal transmission circuit, switching system, and matrix converter
CN104332461B (zh) * 2014-09-04 2017-11-14 电子科技大学 一种多片式高压驱动电路

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US5008725C2 (en) * 1979-05-14 2001-05-01 Internat Rectifer Corp Plural polygon source pattern for mosfet
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
US4399449A (en) * 1980-11-17 1983-08-16 International Rectifier Corporation Composite metal and polysilicon field plate structure for high voltage semiconductor devices
DE3220250A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit planarstruktur
JPH0758899B2 (ja) * 1985-06-12 1995-06-21 シーメンス、アクチエンゲゼルシヤフト 電子スイツチ
EP0208970B1 (de) * 1985-07-09 1990-05-23 Siemens Aktiengesellschaft MOSFET mit Temperaturschutz
JP2566207B2 (ja) * 1986-09-23 1996-12-25 シーメンス、アクチエンゲゼルシヤフト 半導体デバイス
US4811075A (en) * 1987-04-24 1989-03-07 Power Integrations, Inc. High voltage MOS transistors
US4890146A (en) * 1987-12-16 1989-12-26 Siliconix Incorporated High voltage level shift semiconductor device
JPH0648729B2 (ja) * 1988-02-24 1994-06-22 シーメンス、アクチエンゲゼルシシヤフト 電界効果制御可能のバイポーラ・トランジスタ
JPH02266712A (ja) * 1989-04-07 1990-10-31 Fuji Electric Co Ltd 半導体装置
DE4020478C2 (de) * 1989-07-04 2001-03-29 Fuji Electric Co Ltd Mos Halbleitervorrichtung
US5070322A (en) * 1989-07-19 1991-12-03 Fuji Electric Co., Ltd. An overheating detection circuit including a reversely biased junction having a temperature dependent reverse leakage current for detecting overheating of a power integrated circuit
JP2689703B2 (ja) * 1989-08-03 1997-12-10 富士電機株式会社 Ｍｏｓ型半導体装置
DE4041050C2 (de) * 1989-12-25 1999-01-14 Fuji Electric Co Ltd Integrierter Schaltkreis und Verfahren zur Bildung eines Halbleiterbauelements
JP2876694B2 (ja) * 1990-03-20 1999-03-31 富士電機株式会社 電流検出端子を備えたｍｏｓ型半導体装置
US5159516A (en) * 1991-03-14 1992-10-27 Fuji Electric Co., Ltd. Overcurrent-detection circuit
JP2956319B2 (ja) * 1991-11-07 1999-10-04 富士電機株式会社 電圧駆動形スイッチング素子の逆バイアス制御回路
US5258636A (en) * 1991-12-12 1993-11-02 Power Integrations, Inc. Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
US5304837A (en) * 1992-01-08 1994-04-19 Siemens Aktiengesellschaft Monolithically integrated temperature sensor for power semiconductor components
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit

Also Published As

Publication number Publication date
EP0751572A3 (de) 1999-11-24
US5736774A (en) 1998-04-07
DE69637215T2 (de) 2008-05-15
EP0751572B1 (de) 2007-08-22
EP0751572A2 (de) 1997-01-02
JP3228093B2 (ja) 2001-11-12
JPH0974198A (ja) 1997-03-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP