DE69512001D1 - Spannungsreferenzschaltung - Google Patents

Spannungsreferenzschaltung

Info

Publication number
DE69512001D1
DE69512001D1 DE69512001T DE69512001T DE69512001D1 DE 69512001 D1 DE69512001 D1 DE 69512001D1 DE 69512001 T DE69512001 T DE 69512001T DE 69512001 T DE69512001 T DE 69512001T DE 69512001 D1 DE69512001 D1 DE 69512001D1
Authority
DE
Germany
Prior art keywords
voltage reference
reference circuit
circuit
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69512001T
Other languages
English (en)
Other versions
DE69512001T2 (de
Inventor
Hugh Mcintyre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Ltd Great Britain
Original Assignee
SGS Thomson Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Ltd filed Critical SGS Thomson Microelectronics Ltd
Application granted granted Critical
Publication of DE69512001D1 publication Critical patent/DE69512001D1/de
Publication of DE69512001T2 publication Critical patent/DE69512001T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Read Only Memory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Measurement Of Current Or Voltage (AREA)
DE69512001T 1994-11-15 1995-11-09 Spannungsreferenzschaltung Expired - Fee Related DE69512001T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9423033A GB9423033D0 (en) 1994-11-15 1994-11-15 A voltage reference circuit

Publications (2)

Publication Number Publication Date
DE69512001D1 true DE69512001D1 (de) 1999-10-14
DE69512001T2 DE69512001T2 (de) 2000-04-20

Family

ID=10764427

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69512001T Expired - Fee Related DE69512001T2 (de) 1994-11-15 1995-11-09 Spannungsreferenzschaltung

Country Status (5)

Country Link
US (1) US5610506A (de)
EP (1) EP0713166B1 (de)
JP (1) JP2799308B2 (de)
DE (1) DE69512001T2 (de)
GB (1) GB9423033D0 (de)

Families Citing this family (34)

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EP0800176B1 (de) * 1996-04-05 2003-07-02 STMicroelectronics S.r.l. Spannungsregler zum Programmieren nichtflüchtiger Speicherzellen
JPH09330137A (ja) * 1996-04-10 1997-12-22 Toshiba Corp 基準電圧発生回路及び基準電圧発生方法
DE69621020T2 (de) * 1996-11-04 2002-10-24 Stmicroelectronics S.R.L., Agrate Brianza Banddistanzreferenzspannungsgenerator
JP3554123B2 (ja) * 1996-12-11 2004-08-18 ローム株式会社 定電圧回路
JP3185698B2 (ja) * 1997-02-20 2001-07-11 日本電気株式会社 基準電圧発生回路
AU733574B2 (en) * 1997-12-24 2001-05-17 Loktronic Industries Limited Electric lock
US6057721A (en) * 1998-04-23 2000-05-02 Microchip Technology Incorporated Reference circuit using current feedback for fast biasing upon power-up
US6400212B1 (en) 1999-07-13 2002-06-04 National Semiconductor Corporation Apparatus and method for reference voltage generator with self-monitoring
EP1186983A3 (de) * 2000-08-31 2003-11-12 STMicroelectronics S.r.l. Geschalteter Bandabstandsregler
EP1184954A1 (de) 2000-08-31 2002-03-06 STMicroelectronics S.r.l. Selbsgespeister und Integrierter Spannungsregler und dazugehöriges Regelungsverfahren
US6392470B1 (en) * 2000-09-29 2002-05-21 International Business Machines Corporation Bandgap reference voltage startup circuit
US6509726B1 (en) * 2001-07-30 2003-01-21 Intel Corporation Amplifier for a bandgap reference circuit having a built-in startup circuit
US20040080305A1 (en) * 2002-10-29 2004-04-29 Yu-Tong Lin Power on detect circuit
DK1606972T3 (da) * 2003-03-19 2006-11-27 Widex As Fremgangsmåde til programmering af et höreapparat ved hjælp af et programmeringsapparat
US6919811B1 (en) * 2003-05-30 2005-07-19 National Semiconductor Corporation Charger detection and enable circuit
JP4268890B2 (ja) * 2004-02-27 2009-05-27 富士通マイクロエレクトロニクス株式会社 基準電圧発生回路
US7148742B2 (en) * 2004-07-07 2006-12-12 Micron Technology, Inc. Power supply voltage detection circuitry and methods for use of the same
TWI255345B (en) * 2005-01-07 2006-05-21 Winbond Electronics Corp Low voltage detection circuit
US20060164128A1 (en) * 2005-01-21 2006-07-27 Miller Ira G Low current power supply monitor circuit
JP4603378B2 (ja) * 2005-02-08 2010-12-22 株式会社豊田中央研究所 基準電圧回路
US7224209B2 (en) * 2005-03-03 2007-05-29 Etron Technology, Inc. Speed-up circuit for initiation of proportional to absolute temperature biasing circuits
TWI269955B (en) * 2005-08-17 2007-01-01 Ind Tech Res Inst Circuit for reference current and voltage generation
US7728574B2 (en) * 2006-02-17 2010-06-01 Micron Technology, Inc. Reference circuit with start-up control, generator, device, system and method including same
KR100940151B1 (ko) * 2007-12-26 2010-02-03 주식회사 동부하이텍 밴드갭 기준전압 발생회로
TW201017360A (en) * 2008-10-28 2010-05-01 Advanced Analog Technology Inc Bandgap voltage reference circuit
CN101871963A (zh) * 2010-05-28 2010-10-27 上海宏力半导体制造有限公司 电源电压检测电路
US8823267B2 (en) * 2011-06-10 2014-09-02 Cypress Semiconductor Corporation Bandgap ready circuit
CN103399609B (zh) * 2013-08-15 2014-12-10 中国兵器工业集团第二一四研究所苏州研发中心 纳瓦量级低功耗高稳定性带隙基准电压源
CN106843352B (zh) * 2017-02-08 2018-04-17 上海华虹宏力半导体制造有限公司 带隙基准电路
CN106802685B (zh) * 2017-03-30 2018-01-30 中国电子科技集团公司第二十四研究所 一种陡变与绝对温度成正比的基准电路
CN107390757B (zh) * 2017-08-03 2018-07-13 电子科技大学 一种低功耗低温漂cmos亚阈值基准电路
CN107368143B (zh) * 2017-08-29 2018-07-17 电子科技大学 一种低功耗的基准电压源
KR102499482B1 (ko) 2018-07-16 2023-02-13 삼성전자주식회사 반도체 회로 및 반도체 시스템
CN118575409A (zh) * 2022-01-19 2024-08-30 株式会社索思未来 基准电压产生电路以及半导体集成电路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124124A (ja) * 1983-12-08 1985-07-03 Nec Corp 入力回路
US4612632A (en) * 1984-12-10 1986-09-16 Zenith Electronics Corporation Power transition write protection for PROM
US4849656A (en) * 1987-06-11 1989-07-18 Unitrode Corp. Power-on detection circuit
US4935645A (en) * 1988-03-02 1990-06-19 Dallas Semiconductor Corporation Fusing and detection circuit
US4857823A (en) * 1988-09-22 1989-08-15 Ncr Corporation Bandgap voltage reference including a process and temperature insensitive start-up circuit and power-down capability
FR2652672B1 (fr) * 1989-10-02 1991-12-20 Sgs Thomson Microelectronics Memoire a temps de lecture ameliore.
US4975883A (en) * 1990-03-29 1990-12-04 Intel Corporation Method and apparatus for preventing the erasure and programming of a nonvolatile memory
US5027053A (en) * 1990-08-29 1991-06-25 Micron Technology, Inc. Low power VCC /2 generator
US5291446A (en) * 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential
US5349286A (en) * 1993-06-18 1994-09-20 Texas Instruments Incorporated Compensation for low gain bipolar transistors in voltage and current reference circuits

Also Published As

Publication number Publication date
EP0713166A1 (de) 1996-05-22
GB9423033D0 (en) 1995-01-04
JPH0926440A (ja) 1997-01-28
JP2799308B2 (ja) 1998-09-17
US5610506A (en) 1997-03-11
DE69512001T2 (de) 2000-04-20
EP0713166B1 (de) 1999-09-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee