DE69525592T2 - Graben-dmos-transistor mit kanalblockierer in den zellgrabenecken - Google Patents
Graben-dmos-transistor mit kanalblockierer in den zellgrabeneckenInfo
- Publication number
- DE69525592T2 DE69525592T2 DE69525592T DE69525592T DE69525592T2 DE 69525592 T2 DE69525592 T2 DE 69525592T2 DE 69525592 T DE69525592 T DE 69525592T DE 69525592 T DE69525592 T DE 69525592T DE 69525592 T2 DE69525592 T2 DE 69525592T2
- Authority
- DE
- Germany
- Prior art keywords
- trench
- channel blocker
- dmos transistor
- corners
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/253,527 US5468982A (en) | 1994-06-03 | 1994-06-03 | Trenched DMOS transistor with channel block at cell trench corners |
PCT/US1995/006701 WO1995034094A1 (en) | 1994-06-03 | 1995-05-31 | Trenched dmos transistor with channel block at cell trench corners |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69525592D1 DE69525592D1 (de) | 2002-04-04 |
DE69525592T2 true DE69525592T2 (de) | 2002-08-22 |
Family
ID=22960647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69525592T Expired - Lifetime DE69525592T2 (de) | 1994-06-03 | 1995-05-31 | Graben-dmos-transistor mit kanalblockierer in den zellgrabenecken |
Country Status (5)
Country | Link |
---|---|
US (1) | US5468982A (de) |
EP (1) | EP0712535B1 (de) |
JP (1) | JP2893554B2 (de) |
DE (1) | DE69525592T2 (de) |
WO (1) | WO1995034094A1 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5592005A (en) * | 1995-03-31 | 1997-01-07 | Siliconix Incorporated | Punch-through field effect transistor |
JP3361913B2 (ja) * | 1995-04-11 | 2003-01-07 | 沖電気工業株式会社 | 半導体装置 |
JP2987328B2 (ja) * | 1995-06-02 | 1999-12-06 | シリコニックス・インコーポレイテッド | 双方向電流阻止機能を備えたトレンチ型パワーmosfet |
US5689128A (en) * | 1995-08-21 | 1997-11-18 | Siliconix Incorporated | High density trenched DMOS transistor |
US5821583A (en) * | 1996-03-06 | 1998-10-13 | Siliconix Incorporated | Trenched DMOS transistor with lightly doped tub |
US5770878A (en) | 1996-04-10 | 1998-06-23 | Harris Corporation | Trench MOS gate device |
US5904525A (en) * | 1996-05-08 | 1999-05-18 | Siliconix Incorporated | Fabrication of high-density trench DMOS using sidewall spacers |
JP4521643B2 (ja) * | 1997-05-07 | 2010-08-11 | シリコニックス・インコーポレイテッド | 側壁スペーサを用いる高密度トレンチ形dmosの製造 |
US6096608A (en) * | 1997-06-30 | 2000-08-01 | Siliconix Incorporated | Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench |
DE19727676A1 (de) * | 1997-06-30 | 1999-01-07 | Asea Brown Boveri | MOS gesteuertes Leistungshalbleiterbauelement |
JP3299283B2 (ja) * | 1997-08-29 | 2002-07-08 | 三菱電機株式会社 | 絶縁ゲート型半導体装置とその製造方法 |
US6103635A (en) * | 1997-10-28 | 2000-08-15 | Fairchild Semiconductor Corp. | Trench forming process and integrated circuit device including a trench |
US6429481B1 (en) | 1997-11-14 | 2002-08-06 | Fairchild Semiconductor Corporation | Field effect transistor and method of its manufacture |
US6518145B1 (en) | 1998-08-06 | 2003-02-11 | International Business Machines Corporation | Methods to control the threshold voltage of a deep trench corner device |
EP1155458B1 (de) | 1998-12-18 | 2010-02-03 | Infineon Technologies AG | Feldeffekt-transistoranordnung mit einer grabenförmigen gate-elektrode und einer zusätzlichen hochdotierten schicht im bodygebiet |
US5981999A (en) * | 1999-01-07 | 1999-11-09 | Industrial Technology Research Institute | Power trench DMOS with large active cell density |
JP2000269486A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | 半導体装置 |
US6191447B1 (en) | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
JP2001015738A (ja) * | 1999-06-29 | 2001-01-19 | Toshiba Corp | 半導体装置 |
US6518621B1 (en) | 1999-09-14 | 2003-02-11 | General Semiconductor, Inc. | Trench DMOS transistor having reduced punch-through |
US6838735B1 (en) * | 2000-02-24 | 2005-01-04 | International Rectifier Corporation | Trench FET with non overlapping poly and remote contact therefor |
US6312993B1 (en) * | 2000-02-29 | 2001-11-06 | General Semiconductor, Inc. | High speed trench DMOS |
US6376315B1 (en) * | 2000-03-31 | 2002-04-23 | General Semiconductor, Inc. | Method of forming a trench DMOS having reduced threshold voltage |
KR100327323B1 (ko) * | 2000-05-30 | 2002-03-06 | 김덕중 | 래치 업이 억제된 트랜치 게이트 구조의 전력용반도체소자 및 그 제조방법 |
TW523816B (en) * | 2000-06-16 | 2003-03-11 | Gen Semiconductor Inc | Semiconductor trench device with enhanced gate oxide integrity structure |
US6555895B1 (en) * | 2000-07-17 | 2003-04-29 | General Semiconductor, Inc. | Devices and methods for addressing optical edge effects in connection with etched trenches |
ATE545958T1 (de) | 2000-09-21 | 2012-03-15 | Cambridge Semiconductor Ltd | Halbleiterbauelement und dessen herstellungsverfahren |
JP4614522B2 (ja) * | 2000-10-25 | 2011-01-19 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
GB0208833D0 (en) * | 2002-04-18 | 2002-05-29 | Koninkl Philips Electronics Nv | Trench-gate semiconductor devices |
JP4130356B2 (ja) * | 2002-12-20 | 2008-08-06 | 株式会社東芝 | 半導体装置 |
TW584935B (en) * | 2003-03-11 | 2004-04-21 | Mosel Vitelic Inc | Termination structure of DMOS device |
US6992352B2 (en) | 2003-05-15 | 2006-01-31 | Analog Power Limited | Trenched DMOS devices and methods and processes for making same |
US7235842B2 (en) * | 2003-07-12 | 2007-06-26 | Nxp B.V. | Insulated gate power semiconductor devices |
EP1794799B1 (de) * | 2004-09-03 | 2011-05-25 | Cambridge Semiconductor Limited | Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements |
JP4944383B2 (ja) * | 2005-03-25 | 2012-05-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5150048B2 (ja) * | 2005-09-29 | 2013-02-20 | 株式会社デンソー | 半導体基板の製造方法 |
US7601596B2 (en) * | 2006-11-16 | 2009-10-13 | Infineon Technologies Austria Ag | Semiconductor device with trench transistors and method for manufacturing such a device |
JP5166940B2 (ja) * | 2008-03-31 | 2013-03-21 | シリコニックス・インコーポレイテッド | 側壁スペーサを用いる高密度トレンチ形dmosの製造 |
US20120080748A1 (en) * | 2010-09-30 | 2012-04-05 | Force Mos Technology Co., Ltd. | Trench mosfet with super pinch-off regions |
TWI446521B (zh) * | 2011-04-21 | 2014-07-21 | Anpec Electronics Corp | 功率元件之耐壓終止結構 |
US8816715B2 (en) * | 2011-05-12 | 2014-08-26 | Nanya Technology Corp. | MOS test structure, method for forming MOS test structure and method for performing wafer acceptance test |
US8748973B2 (en) | 2011-05-19 | 2014-06-10 | Anpec Electronics Corporation | Super junction transistor and fabrication method thereof |
TWI415173B (zh) | 2011-05-19 | 2013-11-11 | Anpec Electronics Corp | 低米勒電容之超級接面功率電晶體製造方法 |
CN105074931B (zh) * | 2013-04-02 | 2017-09-22 | 丰田自动车株式会社 | 利用沟槽栅电极的绝缘栅双极性晶体管 |
WO2014207793A1 (ja) * | 2013-06-24 | 2014-12-31 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
CN104425247B (zh) | 2013-08-27 | 2018-01-23 | 无锡华润上华科技有限公司 | 一种绝缘栅双极型晶体管的制备方法 |
US9496382B2 (en) * | 2013-11-21 | 2016-11-15 | Chengdu Monolithic Power Systems Co., Ltd. | Field effect transistor, termination structure and associated method for manufacturing |
CN105206608B (zh) * | 2015-10-20 | 2016-09-28 | 福建省福芯电子科技有限公司 | 一种双管芯的沟渠式mosfet加工方法 |
JP2017135245A (ja) * | 2016-01-27 | 2017-08-03 | 株式会社東芝 | 半導体装置 |
JP7242486B2 (ja) | 2019-09-13 | 2023-03-20 | 株式会社東芝 | 半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4567641A (en) * | 1982-04-12 | 1986-02-04 | General Electric Company | Method of fabricating semiconductor devices having a diffused region of reduced length |
JPS58202560A (ja) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPS58207675A (ja) * | 1982-05-28 | 1983-12-03 | Oki Electric Ind Co Ltd | Mis型半導体装置 |
US4641162A (en) * | 1985-12-11 | 1987-02-03 | General Electric Company | Current limited insulated gate device |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
US5072266A (en) * | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
JPH0417371A (ja) * | 1990-05-10 | 1992-01-22 | Matsushita Electron Corp | Mos電界効果トランジスタの製造方法 |
JP2894820B2 (ja) * | 1990-10-25 | 1999-05-24 | 株式会社東芝 | 半導体装置 |
JPH04258174A (ja) * | 1991-02-13 | 1992-09-14 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
-
1994
- 1994-06-03 US US08/253,527 patent/US5468982A/en not_active Expired - Lifetime
-
1995
- 1995-05-31 JP JP8501069A patent/JP2893554B2/ja not_active Expired - Lifetime
- 1995-05-31 DE DE69525592T patent/DE69525592T2/de not_active Expired - Lifetime
- 1995-05-31 EP EP95921443A patent/EP0712535B1/de not_active Expired - Lifetime
- 1995-05-31 WO PCT/US1995/006701 patent/WO1995034094A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2893554B2 (ja) | 1999-05-24 |
EP0712535A1 (de) | 1996-05-22 |
EP0712535A4 (de) | 1997-02-19 |
US5468982A (en) | 1995-11-21 |
DE69525592D1 (de) | 2002-04-04 |
WO1995034094A1 (en) | 1995-12-14 |
EP0712535B1 (de) | 2002-02-27 |
JPH09500241A (ja) | 1997-01-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |