DE69525592D1 - Graben-dmos-transistor mit kanalblockierer in den zellgrabenecken - Google Patents

Graben-dmos-transistor mit kanalblockierer in den zellgrabenecken

Info

Publication number
DE69525592D1
DE69525592D1 DE69525592T DE69525592T DE69525592D1 DE 69525592 D1 DE69525592 D1 DE 69525592D1 DE 69525592 T DE69525592 T DE 69525592T DE 69525592 T DE69525592 T DE 69525592T DE 69525592 D1 DE69525592 D1 DE 69525592D1
Authority
DE
Germany
Prior art keywords
trench
channel blocker
dmos transistor
corners
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69525592T
Other languages
English (en)
Other versions
DE69525592T2 (de
Inventor
Fwu-Iuan Hshieh
Sze-Hon Kwan
F Chang
Yueh-Se Ho
Der Linde Jan Van
King Owyang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of DE69525592D1 publication Critical patent/DE69525592D1/de
Application granted granted Critical
Publication of DE69525592T2 publication Critical patent/DE69525592T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
DE69525592T 1994-06-03 1995-05-31 Graben-dmos-transistor mit kanalblockierer in den zellgrabenecken Expired - Lifetime DE69525592T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/253,527 US5468982A (en) 1994-06-03 1994-06-03 Trenched DMOS transistor with channel block at cell trench corners
PCT/US1995/006701 WO1995034094A1 (en) 1994-06-03 1995-05-31 Trenched dmos transistor with channel block at cell trench corners

Publications (2)

Publication Number Publication Date
DE69525592D1 true DE69525592D1 (de) 2002-04-04
DE69525592T2 DE69525592T2 (de) 2002-08-22

Family

ID=22960647

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525592T Expired - Lifetime DE69525592T2 (de) 1994-06-03 1995-05-31 Graben-dmos-transistor mit kanalblockierer in den zellgrabenecken

Country Status (5)

Country Link
US (1) US5468982A (de)
EP (1) EP0712535B1 (de)
JP (1) JP2893554B2 (de)
DE (1) DE69525592T2 (de)
WO (1) WO1995034094A1 (de)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
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US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
JP3361913B2 (ja) * 1995-04-11 2003-01-07 沖電気工業株式会社 半導体装置
JP2987328B2 (ja) * 1995-06-02 1999-12-06 シリコニックス・インコーポレイテッド 双方向電流阻止機能を備えたトレンチ型パワーｍｏｓｆｅｔ
US5689128A (en) * 1995-08-21 1997-11-18 Siliconix Incorporated High density trenched DMOS transistor
US5821583A (en) * 1996-03-06 1998-10-13 Siliconix Incorporated Trenched DMOS transistor with lightly doped tub
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5904525A (en) * 1996-05-08 1999-05-18 Siliconix Incorporated Fabrication of high-density trench DMOS using sidewall spacers
JP4521643B2 (ja) * 1997-05-07 2010-08-11 シリコニックス・インコーポレイテッド 側壁スペーサを用いる高密度トレンチ形ｄｍｏｓの製造
DE19727676A1 (de) * 1997-06-30 1999-01-07 Asea Brown Boveri MOS gesteuertes Leistungshalbleiterbauelement
US6096608A (en) * 1997-06-30 2000-08-01 Siliconix Incorporated Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
KR100334445B1 (ko) * 1997-08-29 2002-05-04 다니구찌 이찌로오, 기타오카 다카시 절연 게이트형 반도체장치와 그 제조방법
US6103635A (en) * 1997-10-28 2000-08-15 Fairchild Semiconductor Corp. Trench forming process and integrated circuit device including a trench
US6429481B1 (en) * 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
US6518145B1 (en) 1998-08-06 2003-02-11 International Business Machines Corporation Methods to control the threshold voltage of a deep trench corner device
EP1155458B1 (de) * 1998-12-18 2010-02-03 Infineon Technologies AG Feldeffekt-transistoranordnung mit einer grabenförmigen gate-elektrode und einer zusätzlichen hochdotierten schicht im bodygebiet
US5981999A (en) * 1999-01-07 1999-11-09 Industrial Technology Research Institute Power trench DMOS with large active cell density
JP2000269486A (ja) * 1999-03-15 2000-09-29 Toshiba Corp 半導体装置
US6191447B1 (en) 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
JP2001015738A (ja) * 1999-06-29 2001-01-19 Toshiba Corp 半導体装置
US6518621B1 (en) * 1999-09-14 2003-02-11 General Semiconductor, Inc. Trench DMOS transistor having reduced punch-through
US6838735B1 (en) * 2000-02-24 2005-01-04 International Rectifier Corporation Trench FET with non overlapping poly and remote contact therefor
US6312993B1 (en) * 2000-02-29 2001-11-06 General Semiconductor, Inc. High speed trench DMOS
US6376315B1 (en) * 2000-03-31 2002-04-23 General Semiconductor, Inc. Method of forming a trench DMOS having reduced threshold voltage
KR100327323B1 (ko) * 2000-05-30 2002-03-06 김덕중 래치 업이 억제된 트랜치 게이트 구조의 전력용반도체소자 및 그 제조방법
TW523816B (en) * 2000-06-16 2003-03-11 Gen Semiconductor Inc Semiconductor trench device with enhanced gate oxide integrity structure
US6555895B1 (en) * 2000-07-17 2003-04-29 General Semiconductor, Inc. Devices and methods for addressing optical edge effects in connection with etched trenches
EP1319252B1 (de) 2000-09-21 2012-02-15 Cambridge Semiconductor Limited Halbleiterbauelement und dessen herstellungsverfahren
JP4614522B2 (ja) * 2000-10-25 2011-01-19 富士通セミコンダクター株式会社 半導体装置及びその製造方法
GB0208833D0 (en) * 2002-04-18 2002-05-29 Koninkl Philips Electronics Nv Trench-gate semiconductor devices
JP4130356B2 (ja) * 2002-12-20 2008-08-06 株式会社東芝 半導体装置
TW584935B (en) * 2003-03-11 2004-04-21 Mosel Vitelic Inc Termination structure of DMOS device
US6992352B2 (en) 2003-05-15 2006-01-31 Analog Power Limited Trenched DMOS devices and methods and processes for making same
US7235842B2 (en) * 2003-07-12 2007-06-26 Nxp B.V. Insulated gate power semiconductor devices
US7679160B2 (en) * 2004-09-03 2010-03-16 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
JP4944383B2 (ja) * 2005-03-25 2012-05-30 ルネサスエレクトロニクス株式会社 半導体装置
JP5150048B2 (ja) * 2005-09-29 2013-02-20 株式会社デンソー 半導体基板の製造方法
US7601596B2 (en) * 2006-11-16 2009-10-13 Infineon Technologies Austria Ag Semiconductor device with trench transistors and method for manufacturing such a device
JP5166940B2 (ja) * 2008-03-31 2013-03-21 シリコニックス・インコーポレイテッド 側壁スペーサを用いる高密度トレンチ形ｄｍｏｓの製造
US20120080748A1 (en) * 2010-09-30 2012-04-05 Force Mos Technology Co., Ltd. Trench mosfet with super pinch-off regions
TWI446521B (zh) * 2011-04-21 2014-07-21 Anpec Electronics Corp 功率元件之耐壓終止結構
US8816715B2 (en) * 2011-05-12 2014-08-26 Nanya Technology Corp. MOS test structure, method for forming MOS test structure and method for performing wafer acceptance test
TWI415173B (zh) * 2011-05-19 2013-11-11 Anpec Electronics Corp 低米勒電容之超級接面功率電晶體製造方法
US8748973B2 (en) 2011-05-19 2014-06-10 Anpec Electronics Corporation Super junction transistor and fabrication method thereof
CN105074931B (zh) * 2013-04-02 2017-09-22 丰田自动车株式会社 利用沟槽栅电极的绝缘栅双极性晶体管
WO2014207793A1 (ja) * 2013-06-24 2014-12-31 株式会社日立製作所 半導体装置およびその製造方法
CN104425247B (zh) 2013-08-27 2018-01-23 无锡华润上华科技有限公司 一种绝缘栅双极型晶体管的制备方法
US9496382B2 (en) * 2013-11-21 2016-11-15 Chengdu Monolithic Power Systems Co., Ltd. Field effect transistor, termination structure and associated method for manufacturing
CN105206608B (zh) * 2015-10-20 2016-09-28 福建省福芯电子科技有限公司 一种双管芯的沟渠式mosfet加工方法
JP2017135245A (ja) * 2016-01-27 2017-08-03 株式会社東芝 半導体装置
JP7242486B2 (ja) 2019-09-13 2023-03-20 株式会社東芝 半導体装置

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JPS58202560A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 半導体装置およびその製造方法
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Also Published As

Publication number Publication date
EP0712535A4 (de) 1997-02-19
EP0712535A1 (de) 1996-05-22
JPH09500241A (ja) 1997-01-07
US5468982A (en) 1995-11-21
DE69525592T2 (de) 2002-08-22
EP0712535B1 (de) 2002-02-27
WO1995034094A1 (en) 1995-12-14
JP2893554B2 (ja) 1999-05-24

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