CN104425247B - 一种绝缘栅双极型晶体管的制备方法 - Google Patents

一种绝缘栅双极型晶体管的制备方法 Download PDF

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CN104425247B
CN104425247B CN201310380034.3A CN201310380034A CN104425247B CN 104425247 B CN104425247 B CN 104425247B CN 201310380034 A CN201310380034 A CN 201310380034A CN 104425247 B CN104425247 B CN 104425247B
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polysilicon
type ion
bipolar transistor
ion
substrate
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CN104425247A (zh
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钟圣荣
周东飞
邓小社
王根毅
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CSMC Technologies Corp
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Abstract

本发明公开了一种IGBT的制备方法，包括：提供衬底，在衬底的正面形成场氧层，并形成终端保护环；用有源区光刻版光刻并刻蚀掉有源区区域的场氧层，以光刻胶为掩蔽膜向衬底内注入N型离子；在场氧层被刻蚀掉的衬底上淀积并形成多晶硅栅，在多晶硅栅上形成保护层；对N型离子的注入区域进行推结后形成载流子增强区；用P阱光刻版光刻并向载流子增强区内注入P型离子，推结后形成P型体区；借助多晶硅栅向P型体区内进行自对准注入N型离子，推结后形成N型重掺杂区；在多晶硅栅两侧形成侧墙，再向N型重掺杂区内注入P型离子，推结后形成P型重掺杂区；去除保护层后进行多晶硅栅注入掺杂。本发明通过形成载流子增强区降低了器件的导通压降。

Description

一种绝缘栅双极型晶体管的制备方法
技术领域
本发明涉及半导体器件的制造方法，特别是涉及一种绝缘栅双极型晶体管的制备方法。
背景技术
IGBT（Insulated Gate Bipolar Transistor），绝缘栅双极型晶体管，是由双极型三极管（BJT）和金属氧化物半导体场效应管（MOS）组成的功率半导体器件。
降低IGBT器件的导通压降，能够获得更好的电性能。
发明内容
基于此，为了解决传统绝缘栅双极型晶体管导通压降过高的问题，有必要提供一种绝缘栅双极型晶体管的制备方法。
一种绝缘栅双极型晶体管的制备方法，包括：提供衬底，在所述衬底的正面形成场氧层，用终端保护环光刻版光刻并刻蚀所述场氧层，并向被刻蚀开的区域下面的衬底内注入P型离子，形成终端保护环；用有源区光刻版光刻并刻蚀掉有源区区域的所述场氧层，以光刻胶为掩蔽膜向所述衬底内注入N型离子，并在场氧层被刻蚀掉的所述衬底上淀积多晶硅，在淀积的多晶硅上形成保护层，用多晶硅光刻版光刻并刻蚀掉多余的多晶硅和保护层，形成多晶硅栅，再对N型离子的注入区域进行推结后形成载流子增强区；或用有源区光刻版光刻并刻蚀掉有源区区域的所述场氧层，以光刻胶为掩蔽膜向所述衬底内注入N型离子，再推结后形成载流子增强区，并在场氧层被刻蚀掉的所述衬底上淀积多晶硅，在淀积的多晶硅上形成保护层，用多晶硅光刻版光刻并刻蚀掉多余的多晶硅和保护层，形成多晶硅栅；用P阱光刻版光刻并向载流子增强区内注入P型离子，推结后形成P型体区；借助多晶硅栅向P型体区内进行自对准注入N型离子，推结后形成N型重掺杂区；在多晶硅栅两侧形成侧墙，再向所述N型重掺杂区内注入P型离子，推结后形成P型重掺杂区；去除所述保护层后向所述多晶硅栅进行多晶硅注入掺杂；形成层间介质，进行绝缘栅双极型晶体管的正面金属化工艺，进行背面减薄、P型离子注入及退火工艺，及进行绝缘栅双极型晶体管的背面金属化工艺。
在其中一个实施例中，所述在多晶硅栅两侧形成侧墙的步骤之后，向所述N型重掺杂区内注入P型离子的步骤之前，还包括对所述N型重掺杂区进行刻蚀形成凹坑区域的步骤，所述凹坑区域向内凹陷的深度相对于两侧的衬底为0.15微米～0.3微米。
在其中一个实施例中，所述在淀积的多晶硅上形成保护层的步骤包括在所述多晶硅表面形成第一氧化层，在所述第一氧化层表面淀积氮化硅层。
在其中一个实施例中，所述进行绝缘栅双极型晶体管的正面金属化工艺的工艺之后还包括再向所述P型重掺杂区内进行一次P型离子注入的步骤。
在其中一个实施例中，所述向被刻蚀开的区域下面的衬底内注入P型离子，形成终端保护环的步骤中，所述P型离子为硼离子；所述以光刻胶为掩蔽膜向所述衬底内注入N型离子的步骤中，所述N型离子为磷离子；所述用P阱光刻版光刻并向载流子增强区内注入P型离子的步骤中，所述P型离子为硼离子；所述借助多晶硅栅向P型体区内进行自对准注入N型离子的步骤中，所述N型离子为砷离子；所述向N型重掺杂区内注入P型离子的步骤中，所述P型离子为硼离子；所述去除保护层后向所述多晶硅栅进行多晶硅注入掺杂的步骤中，注入的离子为磷离子。
在其中一个实施例中，所述在多晶硅栅两侧形成侧墙的步骤包括：淀积第二氧化层、然后通过腐蚀去除多余的所述第二氧化层，剩余的第二氧化层形成所述侧墙。
在其中一个实施例中，所述进行绝缘栅双极型晶体管的正面金属化工艺的步骤包括用接触孔光刻版光刻并刻蚀出接触孔，并在所述层间介质上溅射导电金属，之后采用金属光刻版光刻并刻蚀溅射的金属形成覆盖所述层间介质的金属引线层。
在其中一个实施例中，所述衬底的材质为硅、碳化硅、砷化镓、磷化铟或锗硅中的一种。
在其中一个实施例中，所述衬底的材质为晶向<100>的单晶硅。
在其中一个实施例中，所述形成层间介质的步骤是淀积硼磷硅玻璃并进行热回流，形成覆盖所述多晶硅栅表面和侧墙表面的层间介质。
上述绝缘栅双极型晶体管的制备方法，通过在用有源区光刻版将有源区区域的场氧层刻开时，就进行N型离子的注入，以增加沟道中载流子浓度，形成载流子增强区，从而降低了导通压降。
附图说明
图1是一实施例中绝缘栅双极型晶体管的结构示意图；
图2是一实施例中绝缘栅双极型晶体管的制备方法的流程图；
图3A～图3F是一实施例中采用绝缘栅双极型晶体管的制备方法制备的绝缘栅双极型晶体管在制备过程中的局部剖视图。
具体实施方式
为使本发明的目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
图1是一实施例中绝缘栅双极型晶体管100的结构示意图，包括外围的终端结构（图1未示）和被终端结构包围的有源区。绝缘栅双极型晶体管100的衬底为N型衬底10，衬底10背面设有P型区16，P型区16背面设有背面金属结构18，终端结构内设有终端保护环（图1未示）。有源区的衬底10正面设有多晶硅栅31，衬底10上多晶硅栅31的两侧设有侧墙72，衬底10上设有覆盖多晶硅栅31和侧墙72的层间介质81，层间介质81上覆盖有金属引线层91。有源区的衬底10内设有N型的载流子增强（Carrier Enhanced）区41，载流子增强区41内设有P型体区51，P型体区51内设有N型重掺杂区61，N型重掺杂区61内设有P型重掺杂区71，P型重掺杂区71表面形成有向内凹陷的凹坑区域62，凹坑区域62相对于两侧的衬底向内凹陷的深度（即图1中的a）为0.15微米～0.3微米。
参见图2，本发明还提供一种上述绝缘栅双极型晶体管100的制备方法，包括下列步骤：
S110，提供衬底，在衬底的正面形成场氧层，并形成终端保护环。
衬底10的材质为硅、碳化硅、砷化镓、磷化铟或锗硅中的一种。在本实施例中，衬底10采用晶向是<100>的单晶硅晶圆（wafer）。
在本实施例中，先在衬底10的正面生长一层场氧层20，然后采用终端保护环光刻版光刻并刻蚀掉需要形成终端保护环的衬底10正上方的场氧化层20。然后以场氧化层20为掩蔽层注入P型离子，形成终端保护环，图3A中示出了三个终端保护环21、22、23，其中终端保护环23所处的位置靠近衬底10中间的有源区区域。可以理解的，终端保护环的数量并不以本实施例为限，本领域技术人员可根据器件实际需要自行选择设置。
图3A为本实施例中步骤S110完成后绝缘栅双极型晶体管的局部结构剖视图。在本实施例中，步骤S110注入的P型离子为硼离子。可以理解的，本实施例各离子注入步骤中所给出的具体注入的P型/N型离子仅是一个较佳实施例，在其它实施例中也可以用本领域技术人员习知的其它P型/N型离子代替。
S120，用有源区光刻版光刻并刻蚀掉有源区区域的场氧层，以光刻胶为掩蔽膜向衬底内注入N型离子。
用有源区光刻版光刻并刻蚀掉有源区区域的场氧层20，然后先不去胶，而是以该光刻胶为掩蔽膜向衬底10内注入N型离子。在本实施例中，步骤S120注入的N型离子为磷离子。图3B为本实施例中步骤S120完成后绝缘栅双极型晶体管的局部结构剖视图，其示出的结构位于图3A右侧。
S130，在场氧层被刻蚀掉的衬底上淀积并形成多晶硅栅，在多晶硅栅上形成保护层。
在场氧层20被刻蚀掉的衬底10上淀积多晶硅，在淀积的多晶硅上形成保护层，再用多晶硅光刻版光刻并刻蚀掉多余的多晶硅和保护层，形成多晶硅栅31。在本实施例中，保护层包括氮化硅层32，在淀积氮化硅之前还需要进行一次氧化，在淀积的多晶硅表面形成第一氧化层（图3C未示），再于第一氧化层上通过淀积形成氮化硅层32。相对于直接在多晶硅表面淀积氮化硅，在多晶硅栅31与氮化硅层32之间淀积一层第一氧化层能够改善应力的问题。
图3C是本实施例中步骤S130完成后绝缘栅双极型晶体管的局部结构剖视图。
S140，对N型离子的注入区域进行推结后形成载流子增强区。
步骤S120中的N型离子注入区域在推结后形成载流子增强（Carrier Enhanced）区41。
在其它实施例中，步骤S130与S140的顺序可以调换，即步骤S120注入N型离子后，先进行高温推结形成载流子增强区41，再淀积形成多晶硅栅31与氮化硅层32。
S150，用P阱光刻版光刻并向载流子增强区内注入P型离子，推结后形成P型体区。
在本实施例中，步骤S150注入的P型离子为硼离子，高温推结后形成P型体区（P-body）51。图3D是本实施例中步骤S150完成后绝缘栅双极型晶体管的局部结构剖视图，其示出的结构位于图3C右侧。
S160，借助多晶硅栅向P型体区内进行自对准注入N型离子，推结后形成N型重掺杂区。
在本实施例中，步骤S160注入的N型离子为砷离子，高温推结后形成N型重掺杂区（NSD）61。图3E是本实施例中步骤S160完成后绝缘栅双极型晶体管的局部结构剖视图。
S170，在多晶硅栅两侧形成侧墙，再向N型重掺杂区内注入P型离子，推结后形成P型重掺杂区。
先淀积一层第二氧化层，然后对器件进行侧墙腐蚀，多余的第二氧化层被腐蚀掉，在多晶硅栅31两侧形成侧墙（spacer）72。
在本实施例中，在侧墙72形成后，向N型重掺杂区61内注入P型离子之前，还包括对N型重掺杂区61进行硅刻蚀、形成凹坑区域62的步骤。凹坑区域62是一个向内凹陷的深度为0.15微米～0.3微米的浅坑。
在向N型重掺杂区61内注入P型离子之前，于P型重掺杂区内刻蚀出0.15微米～0.3微米的浅坑（凹坑区域62），能够使器件获得良好的杂质分布和更大的金属接触面积，降低功耗，提高产品的可靠性，并进一步降低导通压降。
刻蚀出凹坑区域62后进行P型离子的注入。在本实施例中，注入的P型离子为硼离子。注入完成后进行高温推结，形成P型重掺杂区（PSD）71。
S180，去除保护层后进行多晶硅栅注入掺杂。
如前述，本实施例中保护层包括氮化硅层32。去除多晶硅栅31表面的氮化硅层32后，再对多晶硅栅31进行N型离子的注入掺杂。在本实施例中，可以用多晶硅光刻版光刻后进行多晶硅栅31的注入掺杂。图3F是本实施例中步骤S180完成后绝缘栅双极型晶体管的局部结构剖视图。
步骤S180完成后可以进行常规的生成层间介质（ILD），正面金属化，背面减薄、注入及退火，以及背面金属化等工艺。以下同样给出一个具体的实施例。
S190，形成覆盖多晶硅栅和侧墙表面的层间介质。
在器件表面淀积硼磷硅玻璃（BPSG）后进行热回流，形成覆盖多晶硅栅31和侧墙72表面的层间介质81。
S200，正面金属化。
采用接触孔光刻版进行光刻和接触孔（contact）刻蚀，并在器件表面溅射导电金属，之后采用金属光刻版刻蚀该导电金属，形成覆盖层间介质81的金属引线层91。
S210，背面减薄、P注入及退火。
将衬底10的背面减薄至所需厚度，对衬底10背面进行P型离子注入并退火，形成P型区16。P型区16与衬底10构成衬底PN结。在本实施例中，步骤S210注入的P型离子是硼离子。
S220，背面金属化。
对衬底10背面溅射导电金属，在P型区16表面形成背面金属结构18，作为集电极金属引线。图1是本实施例中步骤S220完成后绝缘栅双极型晶体管100的局部结构剖视图。
上述绝缘栅双极型晶体管的制备方法，通过在步骤S120中有源区光刻版将有源区区域的场氧层20刻开时，就进行磷离子的注入，以增加沟道中载流子浓度，形成载流子增强区41，从而降低了导通压降。
上述制备过程中共采用6张光刻版，分别是终端保护环光刻版、有源区光刻版、多晶硅光刻版、P阱光刻版、接触孔光刻版以及金属光刻版。载流子增强区41的离子注入直接利用步骤S120中光刻形成的光刻胶图案作为掩蔽膜，不需要额外为载流子增强区41的离子注入制造一块光刻版，能够节省成本。
另外，在制备完P型重掺杂区71后才进行多晶硅栅31的注入掺杂，使得该注入掺杂位于前面的5次高温推结完成之后，能够避免高温过程中多晶硅内的掺杂离子对栅氧及沟道区的影响，解决了热过程中栅氧易被破坏的难题。同时上述绝缘栅双极型晶体管的制备方法与DMOS工艺兼容，具有普适性和不同IC生产线可移植性好等优点。
在其中一个实施例中，步骤S200采用接触孔光刻版进行光刻和接触孔刻蚀之后，溅射金属之前，还可以再进行一次PSD注入，向P型重掺杂区内注入P型离子，以获得良好的欧姆接触，提高器件的性能。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

1.一种绝缘栅双极型晶体管的制备方法，包括：
提供衬底，在所述衬底的正面形成场氧层，用终端保护环光刻版光刻并刻蚀所述场氧层，并向被刻蚀开的区域下面的衬底内注入P型离子，形成终端保护环；
用有源区光刻版光刻并刻蚀掉有源区区域的所述场氧层，以光刻胶为掩蔽膜向所述衬底内注入N型离子，并在场氧层被刻蚀掉的所述衬底上淀积多晶硅，在淀积的多晶硅上形成保护层，用多晶硅光刻版光刻并刻蚀掉多余的多晶硅和保护层，形成多晶硅栅，再对N型离子的注入区域进行推结后形成载流子增强区；或用有源区光刻版光刻并刻蚀掉有源区区域的所述场氧层，以光刻胶为掩蔽膜向所述衬底内注入N型离子，再推结后形成载流子增强区，并在场氧层被刻蚀掉的所述衬底上淀积多晶硅，在淀积的多晶硅上形成保护层，用多晶硅光刻版光刻并刻蚀掉多余的多晶硅和保护层，形成多晶硅栅；
用P阱光刻版光刻并向所述载流子增强区内注入P型离子，推结后形成P型体区；
借助多晶硅栅向P型体区内进行自对准注入N型离子，推结后形成N型重掺杂区；
在多晶硅栅两侧形成侧墙，再向所述N型重掺杂区内注入P型离子，推结后形成P型重掺杂区；
去除所述保护层后向所述多晶硅栅进行多晶硅注入掺杂；
形成层间介质，进行绝缘栅双极型晶体管的正面金属化工艺，进行背面减薄、P型离子注入及退火工艺，及进行绝缘栅双极型晶体管的背面金属化工艺。
2.根据权利要求1所述的绝缘栅双极型晶体管的制备方法，其特征在于，所述在多晶硅栅两侧形成侧墙的步骤之后，向所述N型重掺杂区内注入P型离子的步骤之前，还包括对所述N型重掺杂区进行刻蚀形成凹坑区域的步骤，所述凹坑区域向内凹陷的深度相对于两侧的衬底为0.15微米～0.3微米。
3.根据权利要求1所述的绝缘栅双极型晶体管的制备方法，其特征在于，所述在淀积的多晶硅上形成保护层的步骤包括在所述多晶硅表面形成第一氧化层，在所述第一氧化层表面淀积氮化硅层。
4.根据权利要求1所述的绝缘栅双极型晶体管的制备方法，其特征在于，所述进行绝缘栅双极型晶体管的正面金属化工艺的工艺之后还包括再向所述P型重掺杂区内进行一次P型离子注入的步骤。
5.根据权利要求1所述的绝缘栅双极型晶体管的制备方法，其特征在于，所述向被刻蚀开的区域下面的衬底内注入P型离子，形成终端保护环的步骤中，所述P型离子为硼离子；所述以光刻胶为掩蔽膜向所述衬底内注入N型离子的步骤中，所述N型离子为磷离子；所述用P阱光刻版光刻并向载流子增强区内注入P型离子的步骤中，所述P型离子为硼离子；所述借助多晶硅栅向P型体区内进行自对准注入N型离子的步骤中，所述N型离子为砷离子；所述向N型重掺杂区内注入P型离子的步骤中，所述P型离子为硼离子；所述去除保护层后向所述多晶硅栅进行多晶硅注入掺杂的步骤中，注入的离子为磷离子。
6.根据权利要求1所述的绝缘栅双极型晶体管的制备方法，其特征在于，所述在多晶硅栅两侧形成侧墙的步骤包括：淀积第二氧化层、然后通过腐蚀去除多余的所述第二氧化层，剩余的第二氧化层形成所述侧墙。
7.根据权利要求1所述的绝缘栅双极型晶体管的制备方法，其特征在于，所述进行绝缘栅双极型晶体管的正面金属化工艺的步骤包括用接触孔光刻版光刻并刻蚀出接触孔，并在所述层间介质上溅射导电金属，之后采用金属光刻版光刻并刻蚀溅射的金属形成覆盖所述层间介质的金属引线层。
8.根据权利要求1所述的绝缘栅双极型晶体管的制备方法，其特征在于，所述衬底的材质为硅、碳化硅、砷化镓、磷化铟或锗硅中的一种。
9.根据权利要求8所述的绝缘栅双极型晶体管的制备方法，其特征在于，所述衬底的材质为晶向<100>的单晶硅。
10.根据权利要求1所述的绝缘栅双极型晶体管的制备方法，其特征在于，所述形成层间介质的步骤是淀积硼磷硅玻璃并进行热回流，形成覆盖所述多晶硅栅表面和侧墙表面的层间介质。
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EP14839057.8A EP3041036B1 (en) 2013-08-27 2014-08-25 Method for manufacturing insulated gate bipolar transistor
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