DE69804907D1 - Geschlossener Transistor mit niedrigen W/L-Verhältnissen - Google Patents

Geschlossener Transistor mit niedrigen W/L-Verhältnissen

Info

Publication number
DE69804907D1
DE69804907D1 DE69804907T DE69804907T DE69804907D1 DE 69804907 D1 DE69804907 D1 DE 69804907D1 DE 69804907 T DE69804907 T DE 69804907T DE 69804907 T DE69804907 T DE 69804907T DE 69804907 D1 DE69804907 D1 DE 69804907D1
Authority
DE
Germany
Prior art keywords
ratios
low
closed transistor
transistor
closed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69804907T
Other languages
English (en)
Other versions
DE69804907T2 (de
Inventor
Peter Poechmueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of DE69804907D1 publication Critical patent/DE69804907D1/de
Publication of DE69804907T2 publication Critical patent/DE69804907T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
DE69804907T 1997-06-30 1998-06-05 Geschlossener Transistor mit niedrigen W/L-Verhältnissen Expired - Fee Related DE69804907T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88531397A 1997-06-30 1997-06-30

Publications (2)

Publication Number Publication Date
DE69804907D1 true DE69804907D1 (de) 2002-05-23
DE69804907T2 DE69804907T2 (de) 2002-11-07

Family

ID=25386626

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69804907T Expired - Fee Related DE69804907T2 (de) 1997-06-30 1998-06-05 Geschlossener Transistor mit niedrigen W/L-Verhältnissen

Country Status (7)

Country Link
EP (1) EP0889530B1 (de)
JP (1) JPH1168091A (de)
KR (1) KR100541826B1 (de)
CN (1) CN1161843C (de)
DE (1) DE69804907T2 (de)
HK (1) HK1015547A1 (de)
TW (1) TW406315B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1501130A1 (de) * 2003-07-21 2005-01-26 STMicroelectronics S.r.l. MOS Halbleiterbauelement und dessen Herstellungsmethode
US7042009B2 (en) * 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
US8635573B2 (en) * 2011-08-01 2014-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a semiconductor device having a defined minimum gate spacing between adjacent gate structures
CN107516677A (zh) * 2016-06-17 2017-12-26 上海新微科技服务有限公司 一种mos场效应晶体管
CN109935636B (zh) * 2019-03-11 2022-08-26 长江存储科技有限责任公司 晶体管及其形成方法、存储器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240093A (en) * 1976-12-10 1980-12-16 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
US4173022A (en) * 1978-05-09 1979-10-30 Rca Corp. Integrated gate field effect transistors having closed gate structure with controlled avalanche characteristics
DE3925123A1 (de) * 1989-07-28 1991-02-07 Siemens Ag Elektrodenanordnung fuer feldeffekttransistoren
KR0149527B1 (ko) * 1994-06-15 1998-10-01 김주용 반도체 소자의 고전압용 트랜지스터 및 그 제조방법

Also Published As

Publication number Publication date
KR19990007465A (ko) 1999-01-25
CN1161843C (zh) 2004-08-11
DE69804907T2 (de) 2002-11-07
HK1015547A1 (en) 1999-10-15
CN1204157A (zh) 1999-01-06
EP0889530A1 (de) 1999-01-07
KR100541826B1 (ko) 2006-06-01
TW406315B (en) 2000-09-21
JPH1168091A (ja) 1999-03-09
EP0889530B1 (de) 2002-04-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee