DE69427066T2 - Spannungserhöhungsschaltung - Google Patents

Spannungserhöhungsschaltung

Info

Publication number
DE69427066T2
DE69427066T2 DE69427066T DE69427066T DE69427066T2 DE 69427066 T2 DE69427066 T2 DE 69427066T2 DE 69427066 T DE69427066 T DE 69427066T DE 69427066 T DE69427066 T DE 69427066T DE 69427066 T2 DE69427066 T2 DE 69427066T2
Authority
DE
Germany
Prior art keywords
node
pump
voltage
boost
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69427066T
Other languages
German (de)
English (en)
Other versions
DE69427066D1 (de
Inventor
Hoon Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69427066D1 publication Critical patent/DE69427066D1/de
Publication of DE69427066T2 publication Critical patent/DE69427066T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Static Random-Access Memory (AREA)
DE69427066T 1993-11-17 1994-11-17 Spannungserhöhungsschaltung Expired - Fee Related DE69427066T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930024483A KR0157334B1 (ko) 1993-11-17 1993-11-17 반도체 메모리 장치의 전압 승압회로

Publications (2)

Publication Number Publication Date
DE69427066D1 DE69427066D1 (de) 2001-05-17
DE69427066T2 true DE69427066T2 (de) 2001-10-11

Family

ID=19368290

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69427066T Expired - Fee Related DE69427066T2 (de) 1993-11-17 1994-11-17 Spannungserhöhungsschaltung

Country Status (8)

Country Link
US (2) US5521871A (cg-RX-API-DMAC10.html)
EP (1) EP0653760B1 (cg-RX-API-DMAC10.html)
JP (1) JP3550197B2 (cg-RX-API-DMAC10.html)
KR (1) KR0157334B1 (cg-RX-API-DMAC10.html)
CN (1) CN1107955C (cg-RX-API-DMAC10.html)
DE (1) DE69427066T2 (cg-RX-API-DMAC10.html)
RU (1) RU2138085C1 (cg-RX-API-DMAC10.html)
TW (1) TW247969B (cg-RX-API-DMAC10.html)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3102833B2 (ja) * 1994-09-06 2000-10-23 株式会社 沖マイクロデザイン 昇圧回路
KR0145615B1 (ko) * 1995-03-13 1998-12-01 김광호 박막 트랜지스터 액정 표시장치의 구동장치
US5698877A (en) * 1995-10-31 1997-12-16 Gonzalez; Fernando Charge-pumping to increase electron collection efficiency
GB2308513B (en) * 1995-12-20 2000-11-22 Hyundai Electronics Ind Negative voltage drive circuit
US5703827A (en) * 1996-02-29 1997-12-30 Monolithic System Technology, Inc. Method and structure for generating a boosted word line voltage and a back bias voltage for a memory array
EP0822556B1 (en) * 1996-08-02 2003-04-02 STMicroelectronics S.r.l. Bidirectional charge pump
KR100248865B1 (ko) * 1996-12-14 2000-03-15 윤종용 반도체 장치의 챠지 펌프 회로
US5933047A (en) * 1997-04-30 1999-08-03 Mosaid Technologies Incorporated High voltage generating circuit for volatile semiconductor memories
US6011423A (en) * 1997-05-23 2000-01-04 International Business Machines Corporation Virtual voltage power supply
US5784326A (en) * 1997-06-04 1998-07-21 Holtek Microelectronics Inc. Voltage raising device
JPH1145574A (ja) * 1997-07-25 1999-02-16 Nec Corp 半導体記憶装置
US6188265B1 (en) * 1997-12-12 2001-02-13 Scenix Semiconduction, Inc. High-voltage NMOS switch
KR100279296B1 (ko) * 1998-06-09 2001-01-15 윤종용 승압 전압 발생 회로
US6977420B2 (en) * 1998-09-30 2005-12-20 National Semiconductor Corporation ESD protection circuit utilizing floating lateral clamp diodes
US6078211A (en) * 1998-10-14 2000-06-20 National Semiconductor Corporation Substrate biasing circuit that utilizes a gated diode to set the bias on the substrate
US6380571B1 (en) 1998-10-14 2002-04-30 National Semiconductor Corporation CMOS compatible pixel cell that utilizes a gated diode to reset the cell
US6072725A (en) * 1999-01-26 2000-06-06 Advanced Micro Devices, Inc. Method of erasing floating gate capacitor used in voltage regulator
US6064594A (en) * 1999-02-26 2000-05-16 Stmicroelectronics S.R.L. Voltage boosting circuit for generating boosted voltage phases
DE19924568B4 (de) * 1999-05-28 2014-05-22 Qimonda Ag Ladungspumpe
US6255896B1 (en) * 1999-09-27 2001-07-03 Intel Corporation Method and apparatus for rapid initialization of charge pump circuits
US6346846B1 (en) 1999-12-17 2002-02-12 International Business Machines Corporation Methods and apparatus for blowing and sensing antifuses
US6356137B1 (en) * 2000-06-26 2002-03-12 Fairchild Semiconductor Corporation Voltage boost circuit with low power supply voltage
US6504422B1 (en) * 2000-11-21 2003-01-07 Semtech Corporation Charge pump with current limiting circuit
US8035626B2 (en) 2002-11-29 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Current driving circuit and display device using the current driving circuit
CN101471030B (zh) * 2002-11-29 2011-01-12 株式会社半导体能源研究所 显示装置
KR100796782B1 (ko) * 2005-12-13 2008-01-22 삼성전자주식회사 반도체 메모리 장치의 승압전압 발생회로 및 승압전압발생방법
JP4883780B2 (ja) * 2006-11-14 2012-02-22 ルネサスエレクトロニクス株式会社 チャージポンプ回路
KR100850272B1 (ko) * 2007-01-25 2008-08-04 삼성전자주식회사 반도체 메모리 장치의 전압 발생회로 및 사용 전압공급방법
US7859301B2 (en) * 2007-04-30 2010-12-28 Altera Corporation Power regulator circuitry for programmable logic device memory elements
JP4985208B2 (ja) * 2007-08-10 2012-07-25 株式会社デンソー 倍電圧整流回路
JP5467454B2 (ja) * 2009-09-01 2014-04-09 Ｎｌｔテクノロジー株式会社 ブートストラップ回路及びレベルシフト回路並びにワード線駆動回路
US9281682B2 (en) * 2013-03-12 2016-03-08 Micron Technology, Inc. Apparatuses and method for over-voltage event protection
US11791332B2 (en) 2021-02-26 2023-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked semiconductor device and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165449A (ja) * 1983-03-10 1984-09-18 Toshiba Corp 半導体記憶装置
JPS6085493A (ja) * 1983-10-17 1985-05-14 Hitachi Ltd ブ−トストラツプ回路
JPS60253090A (ja) * 1984-05-30 1985-12-13 Hitachi Ltd 半導体装置
JP2548908B2 (ja) * 1985-04-13 1996-10-30 富士通株式会社 昇圧回路
JP2580226B2 (ja) * 1988-02-16 1997-02-12 株式会社日立製作所 半導体集積回路装置
JP2503596B2 (ja) * 1988-07-14 1996-06-05 日本電気株式会社 半導体装置
GB2234111B (en) * 1989-07-01 1992-12-02 Plessey Co Plc A method for fabrication of a collector-diffused isolation semiconductor device
US4996453A (en) * 1989-07-28 1991-02-26 Dallas Semiconductor Power down circuit for low-power circuit with dual supply voltages
EP0439899A3 (en) * 1990-01-25 1991-11-06 Precision Monolithics Inc. Complementary bipolar transistors compatible with cmos process
IT1258242B (it) * 1991-11-07 1996-02-22 Samsung Electronics Co Ltd Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione
DE4237589C2 (de) * 1991-11-07 1999-10-28 Samsung Electronics Co Ltd Spannungspumpschaltung
JP2771729B2 (ja) * 1992-04-16 1998-07-02 三菱電機株式会社 チャージポンプ回路
KR950006067Y1 (ko) * 1992-10-08 1995-07-27 문정환 반도체 메모리 장치
KR960000837B1 (ko) * 1992-12-02 1996-01-13 삼성전자주식회사 반도체 메모리장치
JP3307453B2 (ja) * 1993-03-18 2002-07-24 ソニー株式会社 昇圧回路

Also Published As

Publication number Publication date
EP0653760A2 (en) 1995-05-17
RU94045859A (ru) 1996-09-27
CN1122943A (zh) 1996-05-22
JPH07183471A (ja) 1995-07-21
KR950015769A (ko) 1995-06-17
JP3550197B2 (ja) 2004-08-04
CN1107955C (zh) 2003-05-07
EP0653760B1 (en) 2001-04-11
US5610549A (en) 1997-03-11
RU2138085C1 (ru) 1999-09-20
KR0157334B1 (ko) 1998-10-15
EP0653760A3 (en) 1995-11-22
DE69427066D1 (de) 2001-05-17
TW247969B (cg-RX-API-DMAC10.html) 1995-05-21
US5521871A (en) 1996-05-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee