DE69427066D1 - Spannungserhöhungsschaltung - Google Patents
SpannungserhöhungsschaltungInfo
- Publication number
- DE69427066D1 DE69427066D1 DE69427066T DE69427066T DE69427066D1 DE 69427066 D1 DE69427066 D1 DE 69427066D1 DE 69427066 T DE69427066 T DE 69427066T DE 69427066 T DE69427066 T DE 69427066T DE 69427066 D1 DE69427066 D1 DE 69427066D1
- Authority
- DE
- Germany
- Prior art keywords
- booster circuit
- booster
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Amplifiers (AREA)
- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930024483A KR0157334B1 (ko) | 1993-11-17 | 1993-11-17 | 반도체 메모리 장치의 전압 승압회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69427066D1 true DE69427066D1 (de) | 2001-05-17 |
DE69427066T2 DE69427066T2 (de) | 2001-10-11 |
Family
ID=19368290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69427066T Expired - Fee Related DE69427066T2 (de) | 1993-11-17 | 1994-11-17 | Spannungserhöhungsschaltung |
Country Status (8)
Country | Link |
---|---|
US (2) | US5521871A (de) |
EP (1) | EP0653760B1 (de) |
JP (1) | JP3550197B2 (de) |
KR (1) | KR0157334B1 (de) |
CN (1) | CN1107955C (de) |
DE (1) | DE69427066T2 (de) |
RU (1) | RU2138085C1 (de) |
TW (1) | TW247969B (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3102833B2 (ja) * | 1994-09-06 | 2000-10-23 | 株式会社 沖マイクロデザイン | 昇圧回路 |
KR0145615B1 (ko) * | 1995-03-13 | 1998-12-01 | 김광호 | 박막 트랜지스터 액정 표시장치의 구동장치 |
US5698877A (en) * | 1995-10-31 | 1997-12-16 | Gonzalez; Fernando | Charge-pumping to increase electron collection efficiency |
US5920225A (en) * | 1995-12-20 | 1999-07-06 | Hyundai Electronic Industries, Co., Ltd. | Negative voltage drive circuit |
US5703827A (en) * | 1996-02-29 | 1997-12-30 | Monolithic System Technology, Inc. | Method and structure for generating a boosted word line voltage and a back bias voltage for a memory array |
DE69627142T2 (de) * | 1996-08-02 | 2003-10-16 | Stmicroelectronics S.R.L., Agrate Brianza | Bidirektionale Ladungspumpe |
KR100248865B1 (ko) * | 1996-12-14 | 2000-03-15 | 윤종용 | 반도체 장치의 챠지 펌프 회로 |
US5933047A (en) * | 1997-04-30 | 1999-08-03 | Mosaid Technologies Incorporated | High voltage generating circuit for volatile semiconductor memories |
US6011423A (en) * | 1997-05-23 | 2000-01-04 | International Business Machines Corporation | Virtual voltage power supply |
US5784326A (en) * | 1997-06-04 | 1998-07-21 | Holtek Microelectronics Inc. | Voltage raising device |
JPH1145574A (ja) * | 1997-07-25 | 1999-02-16 | Nec Corp | 半導体記憶装置 |
US6188265B1 (en) * | 1997-12-12 | 2001-02-13 | Scenix Semiconduction, Inc. | High-voltage NMOS switch |
KR100279296B1 (ko) * | 1998-06-09 | 2001-01-15 | 윤종용 | 승압 전압 발생 회로 |
US6977420B2 (en) * | 1998-09-30 | 2005-12-20 | National Semiconductor Corporation | ESD protection circuit utilizing floating lateral clamp diodes |
US6380571B1 (en) | 1998-10-14 | 2002-04-30 | National Semiconductor Corporation | CMOS compatible pixel cell that utilizes a gated diode to reset the cell |
US6078211A (en) * | 1998-10-14 | 2000-06-20 | National Semiconductor Corporation | Substrate biasing circuit that utilizes a gated diode to set the bias on the substrate |
US6072725A (en) * | 1999-01-26 | 2000-06-06 | Advanced Micro Devices, Inc. | Method of erasing floating gate capacitor used in voltage regulator |
US6064594A (en) * | 1999-02-26 | 2000-05-16 | Stmicroelectronics S.R.L. | Voltage boosting circuit for generating boosted voltage phases |
DE19924568B4 (de) * | 1999-05-28 | 2014-05-22 | Qimonda Ag | Ladungspumpe |
US6255896B1 (en) * | 1999-09-27 | 2001-07-03 | Intel Corporation | Method and apparatus for rapid initialization of charge pump circuits |
US6346846B1 (en) | 1999-12-17 | 2002-02-12 | International Business Machines Corporation | Methods and apparatus for blowing and sensing antifuses |
US6356137B1 (en) * | 2000-06-26 | 2002-03-12 | Fairchild Semiconductor Corporation | Voltage boost circuit with low power supply voltage |
US6504422B1 (en) * | 2000-11-21 | 2003-01-07 | Semtech Corporation | Charge pump with current limiting circuit |
TWI470607B (zh) | 2002-11-29 | 2015-01-21 | Semiconductor Energy Lab | A current driving circuit and a display device using the same |
KR100796782B1 (ko) * | 2005-12-13 | 2008-01-22 | 삼성전자주식회사 | 반도체 메모리 장치의 승압전압 발생회로 및 승압전압발생방법 |
JP4883780B2 (ja) * | 2006-11-14 | 2012-02-22 | ルネサスエレクトロニクス株式会社 | チャージポンプ回路 |
KR100850272B1 (ko) * | 2007-01-25 | 2008-08-04 | 삼성전자주식회사 | 반도체 메모리 장치의 전압 발생회로 및 사용 전압공급방법 |
US7859301B2 (en) * | 2007-04-30 | 2010-12-28 | Altera Corporation | Power regulator circuitry for programmable logic device memory elements |
JP4985208B2 (ja) * | 2007-08-10 | 2012-07-25 | 株式会社デンソー | 倍電圧整流回路 |
JP5467454B2 (ja) * | 2009-09-01 | 2014-04-09 | Nltテクノロジー株式会社 | ブートストラップ回路及びレベルシフト回路並びにワード線駆動回路 |
US9281682B2 (en) * | 2013-03-12 | 2016-03-08 | Micron Technology, Inc. | Apparatuses and method for over-voltage event protection |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6085493A (ja) * | 1983-10-17 | 1985-05-14 | Hitachi Ltd | ブ−トストラツプ回路 |
JP2548908B2 (ja) * | 1985-04-13 | 1996-10-30 | 富士通株式会社 | 昇圧回路 |
JP2580226B2 (ja) * | 1988-02-16 | 1997-02-12 | 株式会社日立製作所 | 半導体集積回路装置 |
JP2503596B2 (ja) * | 1988-07-14 | 1996-06-05 | 日本電気株式会社 | 半導体装置 |
GB2234111B (en) * | 1989-07-01 | 1992-12-02 | Plessey Co Plc | A method for fabrication of a collector-diffused isolation semiconductor device |
US4996453A (en) * | 1989-07-28 | 1991-02-26 | Dallas Semiconductor | Power down circuit for low-power circuit with dual supply voltages |
EP0439899A3 (en) * | 1990-01-25 | 1991-11-06 | Precision Monolithics Inc. | Complementary bipolar transistors compatible with cmos process |
IT1258242B (it) * | 1991-11-07 | 1996-02-22 | Samsung Electronics Co Ltd | Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione |
DE4237589C2 (de) * | 1991-11-07 | 1999-10-28 | Samsung Electronics Co Ltd | Spannungspumpschaltung |
JP2771729B2 (ja) * | 1992-04-16 | 1998-07-02 | 三菱電機株式会社 | チャージポンプ回路 |
KR950006067Y1 (ko) * | 1992-10-08 | 1995-07-27 | 문정환 | 반도체 메모리 장치 |
KR960000837B1 (ko) * | 1992-12-02 | 1996-01-13 | 삼성전자주식회사 | 반도체 메모리장치 |
JP3307453B2 (ja) * | 1993-03-18 | 2002-07-24 | ソニー株式会社 | 昇圧回路 |
-
1993
- 1993-11-17 KR KR1019930024483A patent/KR0157334B1/ko not_active IP Right Cessation
-
1994
- 1994-11-16 JP JP28175594A patent/JP3550197B2/ja not_active Expired - Fee Related
- 1994-11-16 RU RU94045859A patent/RU2138085C1/ru not_active IP Right Cessation
- 1994-11-17 CN CN94118947A patent/CN1107955C/zh not_active Expired - Fee Related
- 1994-11-17 DE DE69427066T patent/DE69427066T2/de not_active Expired - Fee Related
- 1994-11-17 EP EP94118160A patent/EP0653760B1/de not_active Expired - Lifetime
- 1994-11-17 US US08/342,050 patent/US5521871A/en not_active Expired - Lifetime
- 1994-11-22 TW TW083110841A patent/TW247969B/zh active
-
1995
- 1995-09-15 US US08/526,499 patent/US5610549A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TW247969B (de) | 1995-05-21 |
EP0653760B1 (de) | 2001-04-11 |
US5610549A (en) | 1997-03-11 |
EP0653760A2 (de) | 1995-05-17 |
EP0653760A3 (de) | 1995-11-22 |
KR950015769A (ko) | 1995-06-17 |
JPH07183471A (ja) | 1995-07-21 |
CN1107955C (zh) | 2003-05-07 |
CN1122943A (zh) | 1996-05-22 |
KR0157334B1 (ko) | 1998-10-15 |
JP3550197B2 (ja) | 2004-08-04 |
US5521871A (en) | 1996-05-28 |
RU2138085C1 (ru) | 1999-09-20 |
RU94045859A (ru) | 1996-09-27 |
DE69427066T2 (de) | 2001-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |