DE69636269D1 - Schaltkreis - Google Patents

Schaltkreis

Info

Publication number
DE69636269D1
DE69636269D1 DE69636269T DE69636269T DE69636269D1 DE 69636269 D1 DE69636269 D1 DE 69636269D1 DE 69636269 T DE69636269 T DE 69636269T DE 69636269 T DE69636269 T DE 69636269T DE 69636269 D1 DE69636269 D1 DE 69636269D1
Authority
DE
Germany
Prior art keywords
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69636269T
Other languages
English (en)
Other versions
DE69636269T2 (de
Inventor
Atsushi Kameyama
Katsue Kawakyu
Yoshiko Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69636269D1 publication Critical patent/DE69636269D1/de
Application granted granted Critical
Publication of DE69636269T2 publication Critical patent/DE69636269T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
DE69636269T 1995-09-28 1996-09-27 Schaltkreis Expired - Fee Related DE69636269T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP25041095 1995-09-28
JP25041095 1995-09-28
JP14535596A JP3249393B2 (ja) 1995-09-28 1996-06-07 スイッチ回路
JP14535596 1996-06-07

Publications (2)

Publication Number Publication Date
DE69636269D1 true DE69636269D1 (de) 2006-08-03
DE69636269T2 DE69636269T2 (de) 2006-11-09

Family

ID=26476510

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69636269T Expired - Fee Related DE69636269T2 (de) 1995-09-28 1996-09-27 Schaltkreis

Country Status (4)

Country Link
US (1) US5748053A (de)
EP (1) EP0766396B1 (de)
JP (1) JP3249393B2 (de)
DE (1) DE69636269T2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204530A (ja) * 1995-01-23 1996-08-09 Sony Corp スイツチ回路
JP3310203B2 (ja) * 1997-07-25 2002-08-05 株式会社東芝 高周波スイッチ装置
JP3711193B2 (ja) * 1998-01-16 2005-10-26 三菱電機株式会社 送受信切り換え回路
JP3637830B2 (ja) * 2000-02-22 2005-04-13 株式会社村田製作所 Ｓｐｄｔスイッチおよびそれを用いた通信機
JP2002050980A (ja) * 2000-08-04 2002-02-15 Matsushita Electric Ind Co Ltd 高周波スイッチおよびそれを用いた無線通信機
JP3616343B2 (ja) * 2001-03-27 2005-02-02 松下電器産業株式会社 高周波スイッチ回路およびそれを用いた通信端末装置
JP2002368194A (ja) 2001-06-08 2002-12-20 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US7092677B1 (en) 2002-09-05 2006-08-15 Analog Devices, Inc. 2V SPDT switch for high power RF wireless applications
US6730953B2 (en) * 2002-09-13 2004-05-04 Mia-Com, Inc. Apparatus, methods and articles of manufacture for a low control voltage switch
US6803680B2 (en) * 2002-09-13 2004-10-12 Mia-Com, Inc. Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage
US6774701B1 (en) * 2003-02-19 2004-08-10 Raytheon Company Method and apparatus for electronic switching with low insertion loss and high isolation
US7098755B2 (en) * 2003-07-16 2006-08-29 Analog Devices, Inc. High power, high linearity and low insertion loss single pole double throw transmitter/receiver switch
US7468543B2 (en) * 2003-09-19 2008-12-23 Kabushiki Kaisha Toshiba Semiconductor device, communication device, and semiconductor device inspecting method
JP2005311447A (ja) * 2004-04-16 2005-11-04 Toshiba Corp スイッチ回路
US7221207B2 (en) 2004-06-04 2007-05-22 Matsushita Electric Industrial Co., Ltd. Semiconductor switching circuit for switching the paths of a high frequency signal in a mobile communications unit
EP1774620B1 (de) 2004-06-23 2014-10-01 Peregrine Semiconductor Corporation Integriertes hf-front-end
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US8159283B2 (en) * 2005-08-09 2012-04-17 Hitachi Metals, Ltd. High frequency switch circuit comprising a transistor on the high frequency path
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
EP2255443B1 (de) * 2008-02-28 2012-11-28 Peregrine Semiconductor Corporation Verfahren und vorrichtung für digitale abstimmung eines kondensators bei einer integrierten schaltung
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
JP2011024094A (ja) * 2009-07-17 2011-02-03 Panasonic Corp 半導体装置、高周波回路、および高周波電力増幅装置
US20150048887A1 (en) * 2012-04-09 2015-02-19 Mitsubishi Electric Corporation Amplifier circuit
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236798A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Methods for Increasing RF Throughput Via Usage of Tunable Filters
US9837324B2 (en) 2013-11-12 2017-12-05 Skyworks Solutions, Inc. Devices and methods related to radio-frequency switches having improved on-resistance performance
US20220013415A1 (en) 2013-11-12 2022-01-13 Skyworks Solutions, Inc. Radio-frequency switching devices having improved voltage handling capability
EP3506504B1 (de) * 2013-11-12 2021-09-01 Skyworks Solutions, Inc. Vorrichtungen und verfahren in zusammenhang mit hochfrequenzschaltern mit verbesserter leistung
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
TWI547091B (zh) * 2015-02-17 2016-08-21 絡達科技股份有限公司 可降低訊號損失的天線切換裝置
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
EP3373455B1 (de) * 2015-12-09 2019-12-04 Mitsubishi Electric Corporation Hochfrequenzschalter
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10361697B2 (en) * 2016-12-23 2019-07-23 Skyworks Solutions, Inc. Switch linearization by compensation of a field-effect transistor
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63238716A (ja) * 1986-11-14 1988-10-04 Nec Corp スイッチ回路
US4789846A (en) * 1986-11-28 1988-12-06 Mitsubishi Denki Kabushiki Kaisha Microwave semiconductor switch
JPH0349401A (ja) * 1989-07-18 1991-03-04 Mitsubishi Electric Corp マイクロ波素子
US5477184A (en) * 1992-04-15 1995-12-19 Sanyo Electric Co., Ltd. Fet switching circuit for switching between a high power transmitting signal and a lower power receiving signal
JP3243892B2 (ja) * 1993-05-21 2002-01-07 ソニー株式会社 信号切り替え用スイッチ

Also Published As

Publication number Publication date
US5748053A (en) 1998-05-05
JPH09153781A (ja) 1997-06-10
EP0766396A3 (de) 1999-04-21
EP0766396B1 (de) 2006-06-21
EP0766396A2 (de) 1997-04-02
JP3249393B2 (ja) 2002-01-21
DE69636269T2 (de) 2006-11-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee