DE69421572T2 - Überprüfung von Redundanzelementen eines IC-Speichers ohne Programmierung redundanter Ersatzelemente - Google Patents

Überprüfung von Redundanzelementen eines IC-Speichers ohne Programmierung redundanter Ersatzelemente

Info

Publication number
DE69421572T2
DE69421572T2 DE69421572T DE69421572T DE69421572T2 DE 69421572 T2 DE69421572 T2 DE 69421572T2 DE 69421572 T DE69421572 T DE 69421572T DE 69421572 T DE69421572 T DE 69421572T DE 69421572 T2 DE69421572 T2 DE 69421572T2
Authority
DE
Germany
Prior art keywords
elements
redundant
redundant element
memory
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421572T
Other languages
English (en)
Other versions
DE69421572D1 (de
Inventor
David Charles Mcclure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Publication of DE69421572D1 publication Critical patent/DE69421572D1/de
Application granted granted Critical
Publication of DE69421572T2 publication Critical patent/DE69421572T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Static Random-Access Memory (AREA)
DE69421572T 1993-07-30 1994-07-27 Überprüfung von Redundanzelementen eines IC-Speichers ohne Programmierung redundanter Ersatzelemente Expired - Fee Related DE69421572T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/099,606 US5404331A (en) 1993-07-30 1993-07-30 Redundancy element check in IC memory without programming substitution of redundant elements

Publications (2)

Publication Number Publication Date
DE69421572D1 DE69421572D1 (de) 1999-12-16
DE69421572T2 true DE69421572T2 (de) 2000-04-27

Family

ID=22275806

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421572T Expired - Fee Related DE69421572T2 (de) 1993-07-30 1994-07-27 Überprüfung von Redundanzelementen eines IC-Speichers ohne Programmierung redundanter Ersatzelemente

Country Status (4)

Country Link
US (1) US5404331A (de)
EP (1) EP0637036B1 (de)
JP (1) JPH07153294A (de)
DE (1) DE69421572T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960008788B1 (en) * 1992-12-30 1996-07-03 Hyundai Electronics Ind Row redundancy circuit
KR0133832B1 (ko) * 1993-12-28 1998-04-23 김주용 리던던시 로오/컬럼 프리테스트 장치
US5579326A (en) * 1994-01-31 1996-11-26 Sgs-Thomson Microelectronics, Inc. Method and apparatus for programming signal timing
US5530674A (en) * 1994-04-29 1996-06-25 Sgs-Thomson Microelectronics, Inc. Structure capable of simultaneously testing redundant and non-redundant memory elements during stress testing of an integrated circuit memory device
JP2570203B2 (ja) * 1994-11-22 1997-01-08 日本電気株式会社 半導体記憶装置
US5608678A (en) * 1995-07-31 1997-03-04 Sgs-Thomson Microelectronics, Inc. Column redundancy of a multiple block memory architecture
JP3865828B2 (ja) 1995-11-28 2007-01-10 株式会社ルネサステクノロジ 半導体記憶装置
US5841709A (en) * 1995-12-29 1998-11-24 Stmicroelectronics, Inc. Memory having and method for testing redundant memory cells
US5673227A (en) * 1996-05-14 1997-09-30 Motorola, Inc. Integrated circuit memory with multiplexed redundant column data path
US5699307A (en) * 1996-06-28 1997-12-16 Intel Corporation Method and apparatus for providing redundant memory in an integrated circuit utilizing a subarray shuffle replacement scheme
US5953745A (en) * 1996-11-27 1999-09-14 International Business Machines Corporation Redundant memory array
US5742556A (en) * 1996-12-26 1998-04-21 Micro Magic, Inc. Redundancy scheme for semiconductor RAMS
US5883844A (en) * 1997-05-23 1999-03-16 Stmicroelectronics, Inc. Method of stress testing integrated circuit having memory and integrated circuit having stress tester for memory thereof
FR2764095B1 (fr) * 1997-05-30 2001-10-12 Sgs Thomson Microelectronics Circuit de memoire avec redondance dynamique
KR100621265B1 (ko) * 1998-04-17 2006-09-13 인피니언 테크놀로지스 아게 리던던트 기억 셀을 갖는 메모리 장치 및 리던던트 기억 셀에 액세스하기 위한 방법
JP3853981B2 (ja) 1998-07-02 2006-12-06 株式会社東芝 半導体記憶装置の製造方法
US6201757B1 (en) * 1998-08-20 2001-03-13 Texas Instruments Incorporated Self-timed memory reset circuitry
TW473734B (en) * 1999-09-07 2002-01-21 Samsung Electronics Co Ltd Semiconductor memory device having redundancy circuit capable of improving redundancy efficiency
JP3833022B2 (ja) * 1999-09-30 2006-10-11 富士通株式会社 半導体装置
DE10011180B4 (de) 2000-03-08 2006-02-23 Infineon Technologies Ag Digitale Speicherschaltung
US6466504B1 (en) * 2000-06-08 2002-10-15 Virage Logic Corp. Compilable block clear mechanism on per I/O basis for high-speed memory
US6707707B2 (en) * 2001-12-21 2004-03-16 Micron Technology, Inc. SRAM power-up system and method
US6920072B2 (en) * 2003-02-28 2005-07-19 Union Semiconductor Technology Corporation Apparatus and method for testing redundant memory elements
US7050351B2 (en) * 2003-12-30 2006-05-23 Intel Corporation Method and apparatus for multiple row caches per bank
US6990036B2 (en) * 2003-12-30 2006-01-24 Intel Corporation Method and apparatus for multiple row caches per bank
KR101165027B1 (ko) * 2004-06-30 2012-07-13 삼성전자주식회사 반도체 메모리 장치에서의 리던던시 프로그램 회로
KR100924579B1 (ko) * 2007-06-21 2009-11-02 삼성전자주식회사 리던던시 메모리 셀 억세스 회로, 이를 포함하는 반도체메모리 장치, 및 반도체 메모리 장치의 테스트 방법

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US4422161A (en) * 1981-10-08 1983-12-20 Rca Corporation Memory array with redundant elements
JPS62293598A (ja) * 1986-06-12 1987-12-21 Toshiba Corp 半導体記憶装置
US5058069A (en) * 1987-03-03 1991-10-15 Thomson Semiconducteurs Device for addressing of redundant elements of an integrated circuit memory
DE58903906D1 (de) * 1988-02-10 1993-05-06 Siemens Ag Redundanzdekoder eines integrierten halbleiterspeichers.
KR900003884A (ko) * 1988-08-12 1990-03-27 미다 가쓰시게 대규모 반도체 집적회로 장치
US5128944A (en) * 1989-05-26 1992-07-07 Texas Instruments Incorporated Apparatus and method for providing notification of bit-cell failure in a redundant-bit-cell memory
JP2773271B2 (ja) * 1989-07-26 1998-07-09 日本電気株式会社 半導体記憶装置
JPH03104097A (ja) * 1989-09-18 1991-05-01 Fujitsu Ltd 半導体記憶装置
DE69125052T2 (de) * 1990-06-01 1997-09-25 Nec Corp Halbleiterspeichervorrichtung mit Redundanzschaltung
US5206583A (en) * 1991-08-20 1993-04-27 International Business Machines Corporation Latch assisted fuse testing for customized integrated circuits
JP2730375B2 (ja) * 1992-01-31 1998-03-25 日本電気株式会社 半導体メモリ

Also Published As

Publication number Publication date
US5404331A (en) 1995-04-04
DE69421572D1 (de) 1999-12-16
EP0637036B1 (de) 1999-11-10
JPH07153294A (ja) 1995-06-16
EP0637036A2 (de) 1995-02-01
EP0637036A3 (de) 1995-05-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee