FR2764095B1 - Circuit de memoire avec redondance dynamique - Google Patents

Circuit de memoire avec redondance dynamique

Info

Publication number
FR2764095B1
FR2764095B1 FR9706902A FR9706902A FR2764095B1 FR 2764095 B1 FR2764095 B1 FR 2764095B1 FR 9706902 A FR9706902 A FR 9706902A FR 9706902 A FR9706902 A FR 9706902A FR 2764095 B1 FR2764095 B1 FR 2764095B1
Authority
FR
France
Prior art keywords
memory circuit
dynamic redundancy
redundancy
dynamic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9706902A
Other languages
English (en)
Other versions
FR2764095A1 (fr
Inventor
Richard Ferrant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Priority to FR9706902A priority Critical patent/FR2764095B1/fr
Priority to US09/086,625 priority patent/US5982679A/en
Publication of FR2764095A1 publication Critical patent/FR2764095A1/fr
Priority to US09/390,478 priority patent/US20020001236A1/en
Application granted granted Critical
Publication of FR2764095B1 publication Critical patent/FR2764095B1/fr
Priority to US10/345,843 priority patent/US6934202B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
FR9706902A 1997-05-30 1997-05-30 Circuit de memoire avec redondance dynamique Expired - Fee Related FR2764095B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9706902A FR2764095B1 (fr) 1997-05-30 1997-05-30 Circuit de memoire avec redondance dynamique
US09/086,625 US5982679A (en) 1997-05-30 1998-05-29 Memory circuit with dynamic redundancy
US09/390,478 US20020001236A1 (en) 1997-05-30 1999-09-07 Memory circuit with dynamic redundancy
US10/345,843 US6934202B2 (en) 1997-05-30 2003-01-16 Memory circuit with dynamic redundancy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9706902A FR2764095B1 (fr) 1997-05-30 1997-05-30 Circuit de memoire avec redondance dynamique

Publications (2)

Publication Number Publication Date
FR2764095A1 FR2764095A1 (fr) 1998-12-04
FR2764095B1 true FR2764095B1 (fr) 2001-10-12

Family

ID=9507594

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9706902A Expired - Fee Related FR2764095B1 (fr) 1997-05-30 1997-05-30 Circuit de memoire avec redondance dynamique

Country Status (2)

Country Link
US (3) US5982679A (fr)
FR (1) FR2764095B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198675B1 (en) * 1998-12-23 2001-03-06 Cray Inc. RAM configurable redundancy
JP2003068093A (ja) * 2001-08-28 2003-03-07 Mitsubishi Electric Corp 半導体記憶装置
US7437632B2 (en) * 2003-06-24 2008-10-14 Micron Technology, Inc. Circuits and methods for repairing defects in memory devices
WO2015175427A1 (fr) 2014-05-11 2015-11-19 The Regents Of The University Of California Circuits cmos critiques auto-organisés et procédés de calcul et de traitement d'informations

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186175A3 (fr) * 1984-12-24 1989-02-08 Nec Corporation Dispositif de mémoire à semi-conducteur ayant une structure à redondance
US4598388A (en) * 1985-01-22 1986-07-01 Texas Instruments Incorporated Semiconductor memory with redundant column circuitry
US5471427A (en) * 1989-06-05 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Circuit for repairing defective bit in semiconductor memory device and repairing method
US5005158A (en) * 1990-01-12 1991-04-02 Sgs-Thomson Microelectronics, Inc. Redundancy for serial memory
JP2600018B2 (ja) * 1990-09-29 1997-04-16 三菱電機株式会社 半導体記憶装置
US5265054A (en) * 1990-12-14 1993-11-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with precharged redundancy multiplexing
EP0490680B1 (fr) * 1990-12-14 1996-10-02 STMicroelectronics, Inc. Mémoire à semiconducteur à redondance multiplexée
US5255227A (en) * 1991-02-06 1993-10-19 Hewlett-Packard Company Switched row/column memory redundancy
US5206583A (en) * 1991-08-20 1993-04-27 International Business Machines Corporation Latch assisted fuse testing for customized integrated circuits
US5498990A (en) * 1991-11-05 1996-03-12 Monolithic System Technology, Inc. Reduced CMOS-swing clamping circuit for bus lines
US5255217A (en) * 1992-01-09 1993-10-19 Hewlett-Packard Company Integrated circuit memory device with a redundant memory block
US5471426A (en) * 1992-01-31 1995-11-28 Sgs-Thomson Microelectronics, Inc. Redundancy decoder
US5257229A (en) * 1992-01-31 1993-10-26 Sgs-Thomson Microelectronics, Inc. Column redundancy architecture for a read/write memory
US5295102A (en) * 1992-01-31 1994-03-15 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with improved redundant sense amplifier control
JPH08500687A (ja) * 1992-08-10 1996-01-23 モノリシック・システム・テクノロジー・インコーポレイテッド ウェハ規模の集積化のためのフォルトトレラントな高速度のバス装置及びバスインタフェース
US5404331A (en) * 1993-07-30 1995-04-04 Sgs-Thomson Microelectronics, Inc. Redundancy element check in IC memory without programming substitution of redundant elements
US6101618A (en) * 1993-12-22 2000-08-08 Stmicroelectronics, Inc. Method and device for acquiring redundancy information from a packaged memory chip
FR2716566B1 (fr) * 1994-02-23 1996-04-19 Sgs Thomson Microelectronics Circuit de sélection d'éléments de mémoire redondants et mémoire "Flash Eeprom" comportant ledit circuit.
US5530674A (en) * 1994-04-29 1996-06-25 Sgs-Thomson Microelectronics, Inc. Structure capable of simultaneously testing redundant and non-redundant memory elements during stress testing of an integrated circuit memory device
JP3530574B2 (ja) * 1994-05-20 2004-05-24 株式会社ルネサステクノロジ 半導体記憶装置
US5446698A (en) * 1994-06-30 1995-08-29 Sgs-Thomson Microelectronics, Inc. Block decoded redundant master wordline
US5495446A (en) * 1994-09-30 1996-02-27 Sgs-Thomson Microelectronics, Inc. Pre-charged exclusionary wired-connected programmed redundant select
US5572470A (en) * 1995-05-10 1996-11-05 Sgs-Thomson Microelectronics, Inc. Apparatus and method for mapping a redundant memory column to a defective memory column
US5574688A (en) * 1995-05-10 1996-11-12 Sgs-Thomson Microelectronics, Inc. Apparatus and method for mapping a redundant memory column to a defective memory column
US5612918A (en) * 1995-12-29 1997-03-18 Sgs-Thomson Microelectronics, Inc. Redundancy architecture
US5841709A (en) * 1995-12-29 1998-11-24 Stmicroelectronics, Inc. Memory having and method for testing redundant memory cells
US5771195A (en) * 1995-12-29 1998-06-23 Sgs-Thomson Microelectronics, Inc. Circuit and method for replacing a defective memory cell with a redundant memory cell
US5790462A (en) * 1995-12-29 1998-08-04 Sgs-Thomson Microelectronics, Inc. Redundancy control
US5742556A (en) * 1996-12-26 1998-04-21 Micro Magic, Inc. Redundancy scheme for semiconductor RAMS
US5933376A (en) * 1997-02-28 1999-08-03 Lucent Technologies Inc. Semiconductor memory device with electrically programmable redundancy

Also Published As

Publication number Publication date
US5982679A (en) 1999-11-09
US20020001236A1 (en) 2002-01-03
FR2764095A1 (fr) 1998-12-04
US20040017692A1 (en) 2004-01-29
US6934202B2 (en) 2005-08-23

Similar Documents

Publication Publication Date Title
DE69827714D1 (de) Assoziativspeichersystem
DE59804824D1 (de) Speicherzellenanordnung
DE69525421D1 (de) Integrierte Speicherschaltungsanordnung
FR2778519B1 (fr) Processeur de chiffrement avec interconnexion a memoire partagee
DE69939717D1 (de) Speicherschaltung
DE69803860D1 (de) Direktspeicherzugriffseinheit
KR960012008A (ko) 다이나믹형 메모리
DE69023568D1 (de) Cache-Speicheranordnung.
DE69720158T2 (de) Speicherschaltungen mit eingebautem Selbsttest
DE69832348D1 (de) Speicherschaltung
DE69817955D1 (de) Assoziativspeicher
FR2763738B1 (fr) Dispositif de memoire flash composite
DE69829539D1 (de) Verbesserungen an oder bei Rechnerspeichern
DE69829092D1 (de) Festwertspeicher
FR2762434B1 (fr) Circuit de lecture de memoire avec dispositif de limitation de precharge
DE69810405D1 (de) Adiabatische Logikschaltung
FR2770019B1 (fr) Point memoire mos
FR2695493B1 (fr) Circuit de mémoire avec redondance.
FR2687004B1 (fr) Architecture de memoire associative.
FR2665793B1 (fr) Circuit integre de memoire avec redondance et adressage ameliore en mode de test.
FR2764095B1 (fr) Circuit de memoire avec redondance dynamique
FR2751778B1 (fr) Memoire accessible en lecture seulement
DE69619358D1 (de) Redundanzspeicherregister
FR2784219B1 (fr) Architecture de circuit memoire
NO993614L (no) Minnekrets

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080131