DE69619358D1 - Redundanzspeicherregister - Google Patents

Redundanzspeicherregister

Info

Publication number
DE69619358D1
DE69619358D1 DE69619358T DE69619358T DE69619358D1 DE 69619358 D1 DE69619358 D1 DE 69619358D1 DE 69619358 T DE69619358 T DE 69619358T DE 69619358 T DE69619358 T DE 69619358T DE 69619358 D1 DE69619358 D1 DE 69619358D1
Authority
DE
Germany
Prior art keywords
memory register
redundancy memory
redundancy
register
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69619358T
Other languages
English (en)
Inventor
Luigi Pascucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69619358D1 publication Critical patent/DE69619358D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
DE69619358T 1996-04-18 1996-04-18 Redundanzspeicherregister Expired - Lifetime DE69619358D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830215A EP0802482B1 (de) 1996-04-18 1996-04-18 Redundanzspeicherregister

Publications (1)

Publication Number Publication Date
DE69619358D1 true DE69619358D1 (de) 2002-03-28

Family

ID=8225881

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69619358T Expired - Lifetime DE69619358D1 (de) 1996-04-18 1996-04-18 Redundanzspeicherregister

Country Status (3)

Country Link
US (1) US5812467A (de)
EP (1) EP0802482B1 (de)
DE (1) DE69619358D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10302497A (ja) * 1997-04-28 1998-11-13 Fujitsu Ltd 不良アドレスの代替方法、半導体記憶装置、及び、半導体装置
EP1498905B1 (de) * 1998-02-26 2008-12-17 STMicroelectronics S.r.l. Schaltung zur Auswahl einer Betriebsspannung für nichtflüchtige Halbleiterspeicher
JP3625383B2 (ja) * 1998-08-25 2005-03-02 シャープ株式会社 不揮発性半導体メモリ装置
US6757852B1 (en) * 2000-07-05 2004-06-29 Freescale Semiconductor, Inc. Self resetting high speed redundancy circuit and method thereof
US6728123B2 (en) 2002-04-15 2004-04-27 International Business Machines Corporation Redundant array architecture for word replacement in CAM
US7768847B2 (en) 2008-04-09 2010-08-03 Rambus Inc. Programmable memory repair scheme
TWI774372B (zh) * 2021-05-14 2022-08-11 旺宏電子股份有限公司 內容可定址記憶體及其操作方法
US11587623B2 (en) 2021-05-14 2023-02-21 Macronix International Co., Ltd. Content-addressable memory and operation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69324020T2 (de) * 1993-12-07 1999-07-15 St Microelectronics Srl Halbleiterspeicher mit redundanter Schaltung
EP0668563B1 (de) * 1994-02-17 1998-07-08 STMicroelectronics S.r.l. Verfahren zur Programmierung von Redundanzregistern in einer Zeilenredundanzschaltung für einen Halbleiterspeicherbaustein
EP0668562B1 (de) * 1994-02-17 1998-08-05 STMicroelectronics S.r.l. Verfahren zur Programmierung von Redundanzregistern in einer Spaltenredundanzschaltung für einen Halbleiterspeicherbaustein
JPH09147595A (ja) * 1995-11-24 1997-06-06 Nec Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0802482B1 (de) 2002-02-20
US5812467A (en) 1998-09-22
EP0802482A1 (de) 1997-10-22

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Legal Events

Date Code Title Description
8332 No legal effect for de