FR2763738B1 - Dispositif de memoire flash composite - Google Patents

Dispositif de memoire flash composite

Info

Publication number
FR2763738B1
FR2763738B1 FR9806454A FR9806454A FR2763738B1 FR 2763738 B1 FR2763738 B1 FR 2763738B1 FR 9806454 A FR9806454 A FR 9806454A FR 9806454 A FR9806454 A FR 9806454A FR 2763738 B1 FR2763738 B1 FR 2763738B1
Authority
FR
France
Prior art keywords
memory device
flash memory
composite flash
composite
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9806454A
Other languages
English (en)
Other versions
FR2763738A1 (fr
Inventor
Minoru Fukuda
Hiroaki Nakanishi
Kunio Matsudaira
Masahiro Matsuo
Hirohisa Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of FR2763738A1 publication Critical patent/FR2763738A1/fr
Application granted granted Critical
Publication of FR2763738B1 publication Critical patent/FR2763738B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
FR9806454A 1997-05-23 1998-05-22 Dispositif de memoire flash composite Expired - Lifetime FR2763738B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14997597A JPH10326493A (ja) 1997-05-23 1997-05-23 複合化フラッシュメモリ装置

Publications (2)

Publication Number Publication Date
FR2763738A1 FR2763738A1 (fr) 1998-11-27
FR2763738B1 true FR2763738B1 (fr) 2001-10-19

Family

ID=15486730

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9806454A Expired - Lifetime FR2763738B1 (fr) 1997-05-23 1998-05-22 Dispositif de memoire flash composite

Country Status (3)

Country Link
US (7) US6115292A (fr)
JP (1) JPH10326493A (fr)
FR (1) FR2763738B1 (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
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JPH10326493A (ja) * 1997-05-23 1998-12-08 Ricoh Co Ltd 複合化フラッシュメモリ装置
JP3741534B2 (ja) * 1998-03-24 2006-02-01 株式会社リコー 半導体メモリ
US6279114B1 (en) * 1998-11-04 2001-08-21 Sandisk Corporation Voltage negotiation in a single host multiple cards system
DE69923548D1 (de) * 1999-06-22 2005-03-10 St Microelectronics Srl Flashkompatibler EEPROM Speicher
JP3530425B2 (ja) 1999-08-20 2004-05-24 Ｎｅｃマイクロシステム株式会社 半導体記憶装置
US6463516B1 (en) * 2000-04-25 2002-10-08 Advanced Micro Devices, Inc. Variable sector size for a high density flash memory device
US6748482B1 (en) * 2000-09-27 2004-06-08 Intel Corporation Multiple non-contiguous block erase in flash memory
WO2002067268A1 (fr) * 2001-02-20 2002-08-29 Micron Technology, Inc. Architecture de machine a etat fini d'instruction pour des instructions internes de memoire flash
ITMI20010342A1 (it) 2001-02-20 2002-08-20 Micron Technology Inc Sistema di memoria non volatile per memorizzare valori di dati
US6879522B2 (en) * 2001-03-12 2005-04-12 Micron Technology, Inc. Method for making a memory device with plural substrates each having a memory array, a read only memory, and a write state machine
JP2004088956A (ja) * 2002-07-04 2004-03-18 Ricoh Co Ltd 電源回路
JP2004062331A (ja) * 2002-07-25 2004-02-26 Ricoh Co Ltd 直流電源装置
ATE504446T1 (de) * 2002-12-02 2011-04-15 Silverbrook Res Pty Ltd Totdüsenausgleich
JP4387170B2 (ja) * 2003-11-27 2009-12-16 株式会社リコー スイッチングレギュレータ
JP2006024342A (ja) * 2004-06-08 2006-01-26 Toshiba Corp 不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込み方法、メモリカード及びｉｃカード
JP4618676B2 (ja) 2005-04-28 2011-01-26 株式会社リコー 構造化文書符号の転送方法、画像処理システム、サーバ装置、プログラム及び情報記録媒体
JP2007310608A (ja) * 2006-05-18 2007-11-29 Fuji Xerox Co Ltd データ処理装置、データ処理方法およびデータ処理プログラム
KR100769771B1 (ko) * 2006-09-29 2007-10-23 주식회사 하이닉스반도체 플래시 메모리 장치 및 그 소거 방법
JP2007157331A (ja) * 2007-03-16 2007-06-21 Ricoh Co Ltd 複合化フラッシュメモリ及びそれを搭載した携帯用機器
JP5200470B2 (ja) * 2007-09-20 2013-06-05 株式会社リコー メモリ制御回路及び半導体装置
JP2009301600A (ja) * 2008-06-10 2009-12-24 Panasonic Corp 不揮発性半導体記憶装置および信号処理システム
JP2010267341A (ja) * 2009-05-15 2010-11-25 Renesas Electronics Corp 半導体装置
JP5763004B2 (ja) * 2012-03-26 2015-08-12 株式会社東芝 不揮発性半導体記憶装置
US10607671B2 (en) * 2018-02-17 2020-03-31 Micron Technology, Inc. Timing circuit for command path in a memory device

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JP2709751B2 (ja) * 1990-06-15 1998-02-04 三菱電機株式会社 不揮発性半導体記憶装置およびそのデータ消去方法
GB2251323B (en) * 1990-12-31 1994-10-12 Intel Corp Disk emulation for a non-volatile semiconductor memory
US5396468A (en) * 1991-03-15 1995-03-07 Sundisk Corporation Streamlined write operation for EEPROM system
US5245572A (en) * 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
JP2632104B2 (ja) * 1991-11-07 1997-07-23 三菱電機株式会社 不揮発性半導体記憶装置
TW231343B (fr) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
JPH05283708A (ja) * 1992-04-02 1993-10-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置，その製造方法および試験方法
US5339279A (en) * 1993-05-07 1994-08-16 Motorola, Inc. Block erasable flash EEPROM apparatus and method thereof
US5414664A (en) * 1993-05-28 1995-05-09 Macronix International Co., Ltd. Flash EPROM with block erase flags for over-erase protection
JP3009562B2 (ja) * 1993-07-30 2000-02-14 三菱電機株式会社 光スイッチング装置
US5563823A (en) * 1993-08-31 1996-10-08 Macronix International Co., Ltd. Fast FLASH EPROM programming and pre-programming circuit design
JP3301047B2 (ja) * 1993-09-16 2002-07-15 株式会社日立製作所 半導体メモリシステム
JP3512833B2 (ja) * 1993-09-17 2004-03-31 株式会社東芝 不揮発性半導体記憶装置
US5627838A (en) * 1993-09-30 1997-05-06 Macronix International Co., Ltd. Automatic test circuitry with non-volatile status write
US5798961A (en) * 1994-08-23 1998-08-25 Emc Corporation Non-volatile memory module
US5749088A (en) * 1994-09-15 1998-05-05 Intel Corporation Memory card with erasure blocks and circuitry for selectively protecting the blocks from memory operations
EP0745995B1 (fr) * 1995-05-05 2001-04-11 STMicroelectronics S.r.l. Dispositif de mémoire nonvolatile, notamment EEPROM flash
DE69514502T2 (de) * 1995-05-05 2000-08-03 St Microelectronics Srl Nichtflüchtige Speicheranordnung mit Sektoren, deren Grösse und Anzahl bestimmbar sind
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
KR100359414B1 (ko) * 1996-01-25 2003-01-24 동경 엘렉트론 디바이스 주식회사 데이타독출/기록방법및그를이용한메모리제어장치및시스템
US5715193A (en) * 1996-05-23 1998-02-03 Micron Quantum Devices, Inc. Flash memory system and method for monitoring the disturb effect on memory cell blocks due to high voltage conditions of other memory cell blocks
US5764586A (en) * 1996-10-10 1998-06-09 Catalyst Semiconductor, Inc. Intermediate size non-volatile electrically alterable semiconductor memory device
US5875127A (en) * 1996-10-24 1999-02-23 Yin; Ronald Loh-Hwa Non-volatile semiconductor memory device having a floating gate storage capacitor and method of operating thereof
US5841696A (en) 1997-03-05 1998-11-24 Advanced Micro Devices, Inc. Non-volatile memory enabling simultaneous reading and writing by time multiplexing a decode path
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US5732017A (en) * 1997-03-31 1998-03-24 Atmel Corporation Combined program and data nonvolatile memory with concurrent program-read/data write capability
JP2964982B2 (ja) * 1997-04-01 1999-10-18 日本電気株式会社 不揮発性半導体記憶装置
US5949716A (en) * 1997-04-16 1999-09-07 Invox Technology Look-ahead erase for sequential data storage
JPH10326493A (ja) * 1997-05-23 1998-12-08 Ricoh Co Ltd 複合化フラッシュメモリ装置
JP3411186B2 (ja) * 1997-06-06 2003-05-26 シャープ株式会社 不揮発性半導体記憶装置
JP3718578B2 (ja) * 1997-06-25 2005-11-24 ソニー株式会社 メモリ管理方法及びメモリ管理装置
US6016270A (en) * 1998-03-06 2000-01-18 Alliance Semiconductor Corporation Flash memory architecture that utilizes a time-shared address bus scheme and separate memory cell access paths for simultaneous read/write operations

Also Published As

Publication number Publication date
US20030210588A1 (en) 2003-11-13
US6115292A (en) 2000-09-05
US7672172B2 (en) 2010-03-02
FR2763738A1 (fr) 1998-11-27
US20100103739A1 (en) 2010-04-29
US20020031013A1 (en) 2002-03-14
US20090091984A1 (en) 2009-04-09
US7483312B2 (en) 2009-01-27
US6335883B1 (en) 2002-01-01
USRE40917E1 (en) 2009-09-15
US6545916B2 (en) 2003-04-08
US7969791B2 (en) 2011-06-28
JPH10326493A (ja) 1998-12-08

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