DE69325232D1 - Leistungshalbleitermodul - Google Patents
LeistungshalbleitermodulInfo
- Publication number
- DE69325232D1 DE69325232D1 DE69325232T DE69325232T DE69325232D1 DE 69325232 D1 DE69325232 D1 DE 69325232D1 DE 69325232 T DE69325232 T DE 69325232T DE 69325232 T DE69325232 T DE 69325232T DE 69325232 D1 DE69325232 D1 DE 69325232D1
- Authority
- DE
- Germany
- Prior art keywords
- power semiconductor
- semiconductor module
- module
- power
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7306792U JP2555796Y2 (ja) | 1992-10-20 | 1992-10-20 | パワーモジュール |
JP7306992U JPH0638246U (ja) | 1992-10-20 | 1992-10-20 | パワーモジュール |
JP073068U JPH0638248U (ja) | 1992-10-20 | 1992-10-20 | パワーモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69325232D1 true DE69325232D1 (de) | 1999-07-15 |
DE69325232T2 DE69325232T2 (de) | 2000-02-17 |
Family
ID=27301113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69325232T Expired - Fee Related DE69325232T2 (de) | 1992-10-20 | 1993-10-19 | Leistungshalbleitermodul |
Country Status (5)
Country | Link |
---|---|
US (1) | US5398160A (de) |
EP (1) | EP0594395B1 (de) |
KR (1) | KR100307465B1 (de) |
CN (1) | CN1036043C (de) |
DE (1) | DE69325232T2 (de) |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4418426B4 (de) * | 1993-09-08 | 2007-08-02 | Mitsubishi Denki K.K. | Halbleiterleistungsmodul und Verfahren zur Herstellung des Halbleiterleistungsmoduls |
JPH06326330A (ja) * | 1993-05-13 | 1994-11-25 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP3051011B2 (ja) * | 1993-11-18 | 2000-06-12 | 株式会社東芝 | パワ−モジュ−ル |
JPH07147347A (ja) * | 1993-11-25 | 1995-06-06 | Matsushita Electric Ind Co Ltd | 集積回路装置 |
JPH07211856A (ja) * | 1994-01-12 | 1995-08-11 | Fujitsu Ltd | 集積回路モジュール |
US5754402A (en) * | 1995-06-22 | 1998-05-19 | Sumitomo Electric Industries, Ltd. | Power amplifying module |
JPH098468A (ja) * | 1995-06-22 | 1997-01-10 | Sumitomo Electric Ind Ltd | モジュール電子部品 |
DE19528632A1 (de) * | 1995-08-04 | 1997-02-06 | Bosch Gmbh Robert | Steuergerät bestehend aus mindestens zwei Gehäuseteilen |
JP2795626B2 (ja) * | 1995-08-21 | 1998-09-10 | 北川工業株式会社 | 放熱機能付き電子部品 |
JP3516789B2 (ja) * | 1995-11-15 | 2004-04-05 | 三菱電機株式会社 | 半導体パワーモジュール |
JPH09148523A (ja) * | 1995-11-21 | 1997-06-06 | Toshiba Corp | 半導体装置 |
US5892279A (en) * | 1995-12-11 | 1999-04-06 | Northrop Grumman Corporation | Packaging for electronic power devices and applications using the packaging |
US6008988A (en) * | 1995-12-20 | 1999-12-28 | Intel Corporation | Integrated circuit package with a heat spreader coupled to a pair of electrical devices |
US5960535A (en) * | 1997-10-28 | 1999-10-05 | Hewlett-Packard Company | Heat conductive substrate press-mounted in PC board hole for transferring heat from IC to heat sink |
RU2133523C1 (ru) * | 1997-11-03 | 1999-07-20 | Закрытое акционерное общество "Техно-ТМ" | Трехмерный электронный модуль |
DE19750306A1 (de) * | 1997-11-13 | 1999-05-20 | Bosch Gmbh Robert | Elektronisches Steuergerät |
US6147869A (en) * | 1997-11-24 | 2000-11-14 | International Rectifier Corp. | Adaptable planar module |
CA2255441C (en) | 1997-12-08 | 2003-08-05 | Hiroki Sekiya | Package for semiconductor power device and method for assembling the same |
US5926372A (en) * | 1997-12-23 | 1999-07-20 | Ford Global Technologies, Inc. | Power block assembly and method of making same |
US6201701B1 (en) | 1998-03-11 | 2001-03-13 | Kimball International, Inc. | Integrated substrate with enhanced thermal characteristics |
FR2776462B1 (fr) * | 1998-03-19 | 2000-05-19 | Schneider Electric Sa | Module de composants electroniques de puissance |
DE19900603A1 (de) * | 1999-01-11 | 2000-07-13 | Bosch Gmbh Robert | Elektronisches Halbleitermodul |
JP3747699B2 (ja) * | 1999-08-06 | 2006-02-22 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
DE19953191A1 (de) * | 1999-11-05 | 2001-05-10 | Bosch Gmbh Robert | Elektronisches Steuergerät |
US6295200B1 (en) * | 2000-02-23 | 2001-09-25 | Motorola, Inc. | Carrier assembly and method |
JP3634735B2 (ja) * | 2000-10-05 | 2005-03-30 | 三洋電機株式会社 | 半導体装置および半導体モジュール |
KR100403608B1 (ko) * | 2000-11-10 | 2003-11-01 | 페어차일드코리아반도체 주식회사 | 스택구조의 인텔리젠트 파워 모듈 패키지 및 그 제조방법 |
DE10064979C1 (de) * | 2000-12-18 | 2002-02-28 | Dieter Loewer | Schaltungsanordnung und Verfahren zur Herstellung einer solchen Anordnung |
US6455925B1 (en) * | 2001-03-27 | 2002-09-24 | Ericsson Inc. | Power transistor package with integrated flange for surface mount heat removal |
KR20030060888A (ko) * | 2001-07-09 | 2003-07-16 | 다이킨 고교 가부시키가이샤 | 파워 모듈 및 공기 조화기 |
JP2003125588A (ja) * | 2001-10-12 | 2003-04-25 | Mitsubishi Electric Corp | 電力変換装置 |
US20050136640A1 (en) * | 2002-01-07 | 2005-06-23 | Chuan Hu | Die exhibiting an effective coefficient of thermal expansion equivalent to a substrate mounted thereon, and processes of making same |
US6841413B2 (en) * | 2002-01-07 | 2005-01-11 | Intel Corporation | Thinned die integrated circuit package |
DE10213648B4 (de) * | 2002-03-27 | 2011-12-15 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
JP3910497B2 (ja) * | 2002-07-03 | 2007-04-25 | 株式会社オートネットワーク技術研究所 | 電力回路部の防水方法及び電力回路部をもつパワーモジュール |
JP2004088989A (ja) * | 2002-07-03 | 2004-03-18 | Auto Network Gijutsu Kenkyusho:Kk | 電力回路部の防水方法 |
US7057896B2 (en) * | 2002-08-21 | 2006-06-06 | Matsushita Electric Industrial Co., Ltd. | Power module and production method thereof |
JP3740117B2 (ja) * | 2002-11-13 | 2006-02-01 | 三菱電機株式会社 | 電力用半導体装置 |
EP1424728A1 (de) * | 2002-11-27 | 2004-06-02 | Abb Research Ltd. | Leistungshalbleitermodul |
US6983918B1 (en) * | 2002-12-31 | 2006-01-10 | Leasure Richard L | Drink holder |
EP1465250A1 (de) * | 2003-04-02 | 2004-10-06 | Abb Research Ltd. | Isolierter Leistungshalbleitermodul mit verringerter Teilentladung und Verfahren zu seiner Herstellung |
DE10316136A1 (de) * | 2003-04-09 | 2004-11-18 | Ixys Semiconductor Gmbh | Gekapselte Leistungshalbleiteranordnung |
US6775145B1 (en) * | 2003-05-14 | 2004-08-10 | Cyntec Co., Ltd. | Construction for high density power module package (case II) |
US20050231922A1 (en) * | 2004-04-16 | 2005-10-20 | Jung-Chien Chang | Functional printed circuit board module with an embedded chip |
US7149088B2 (en) * | 2004-06-18 | 2006-12-12 | International Rectifier Corporation | Half-bridge power module with insert molded heatsinks |
JP4466256B2 (ja) * | 2004-07-29 | 2010-05-26 | アイシン・エィ・ダブリュ株式会社 | 自動変速機用電子制御装置 |
JP4207896B2 (ja) * | 2005-01-19 | 2009-01-14 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
US7221055B2 (en) * | 2005-05-23 | 2007-05-22 | Texas Instruments Incorporated | System and method for die attach using a backside heat spreader |
JP2009502024A (ja) * | 2005-06-27 | 2009-01-22 | ラミナ ライティング インコーポレーテッド | 発光ダイオードパッケージ及びその製造方法 |
JP2007010042A (ja) * | 2005-06-30 | 2007-01-18 | Denso Corp | 車両制御システム |
DE102005049872B4 (de) * | 2005-10-18 | 2010-09-23 | Continental Automotive Gmbh | IC-Bauelement mit Kühlanordnung |
US20070267216A1 (en) * | 2006-05-16 | 2007-11-22 | Li-Wei Kuo | Base of a circuit board with a heat dissipating capability |
JP4858290B2 (ja) * | 2006-06-05 | 2012-01-18 | 株式会社デンソー | 負荷駆動装置 |
TWI340010B (en) * | 2006-08-04 | 2011-04-01 | Everlight Electronics Co Ltd | Circuit board with cooling functionality |
EP1968188B1 (de) * | 2007-03-09 | 2012-08-08 | HÜTTINGER Elektronik GmbH + Co. KG | Klasse-D Verstärkeranordnung |
US7561430B2 (en) * | 2007-04-30 | 2009-07-14 | Watlow Electric Manufacturing Company | Heat management system for a power switching device |
JP4523632B2 (ja) * | 2007-12-11 | 2010-08-11 | 三菱電機株式会社 | 半導体装置 |
DE102008001414A1 (de) * | 2008-04-28 | 2009-10-29 | Robert Bosch Gmbh | Substrat-Schaltungsmodul mit Bauteilen in mehreren Kontaktierungsebenen |
CN101841994B (zh) * | 2009-03-21 | 2013-06-12 | 富瑞精密组件(昆山)有限公司 | 便携式电子装置及其可插式散热装置 |
FR2947679A1 (fr) * | 2009-07-03 | 2011-01-07 | Valeo Equip Electr Moteur | Machine electrique tournante equipee d'un module electronique de puissance perfectionne |
US8547709B2 (en) * | 2010-02-12 | 2013-10-01 | Cyntec Co. Ltd. | Electronic system with a composite substrate |
JP5870777B2 (ja) * | 2012-03-09 | 2016-03-01 | 富士電機株式会社 | 半導体装置およびその製造方法 |
CN102655732A (zh) * | 2012-05-12 | 2012-09-05 | 浙江大学 | 带有散热结构的功率模块基板 |
CN103051188B (zh) * | 2012-12-07 | 2015-03-11 | 聚信科技有限公司 | 一种隔离直流电源模块 |
FR3004058B1 (fr) * | 2013-03-26 | 2016-12-16 | Valeo Systemes Thermiques | Module de commande d'un appareil electrique |
CN103237412B (zh) | 2013-03-27 | 2016-03-23 | 苏州远创达科技有限公司 | 一种电子件安装结构及制作方法、电子件产品 |
JP2015026820A (ja) * | 2013-06-18 | 2015-02-05 | 株式会社デンソー | 電子装置 |
CN104632717B (zh) * | 2013-11-12 | 2017-04-12 | 巨铠实业股份有限公司 | 吊扇控制器置放盒的散热结构 |
CN205105500U (zh) * | 2015-08-06 | 2016-03-23 | 台达电子企业管理(上海)有限公司 | 散热器与电源模块 |
CN106684076B (zh) * | 2015-11-05 | 2019-09-06 | 台达电子企业管理(上海)有限公司 | 封装结构及其制造方法 |
US9698076B1 (en) * | 2015-12-22 | 2017-07-04 | Ksr Ip Holdings Llc. | Metal slugs for double-sided cooling of power module |
US9866213B1 (en) | 2016-09-08 | 2018-01-09 | United Silicon Carbide, Inc. | High voltage switch module |
CN106328610B (zh) * | 2016-09-25 | 2018-12-07 | 绍兴柯桥东进纺织有限公司 | 一种多模式集成电路封装装置 |
US10431477B2 (en) * | 2016-11-29 | 2019-10-01 | Pep Innovation Pte Ltd. | Method of packaging chip and chip package structure |
CN107393886A (zh) * | 2017-08-24 | 2017-11-24 | 广东美的制冷设备有限公司 | 智能功率模块及其制造方法 |
CN107481978A (zh) * | 2017-08-24 | 2017-12-15 | 广东美的制冷设备有限公司 | 智能功率模块及其制造方法 |
CN109300795B (zh) * | 2018-09-27 | 2020-05-19 | 江苏矽智半导体科技有限公司 | 一种半导体功率器件封装及其制备方法 |
CN109780690A (zh) * | 2018-11-28 | 2019-05-21 | 珠海格力电器股份有限公司 | 一种无线智能功率模块、控制方法及变频空调器 |
CN109979909A (zh) * | 2019-04-30 | 2019-07-05 | 烟台艾睿光电科技有限公司 | 一种wlp器件 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5933894A (ja) * | 1982-08-19 | 1984-02-23 | 電気化学工業株式会社 | 混成集積用回路基板の製造法 |
EP0206771B1 (de) * | 1985-06-20 | 1992-03-11 | Kabushiki Kaisha Toshiba | Verkapselte Halbleiteranordnung |
JPH0364049A (ja) * | 1989-08-02 | 1991-03-19 | Hitachi Ltd | 混成集積回路装置 |
JPH0376255A (ja) * | 1989-08-18 | 1991-04-02 | Fujitsu Ltd | 半導体装置の実装構造 |
US5095404A (en) * | 1990-02-26 | 1992-03-10 | Data General Corporation | Arrangement for mounting and cooling high density tab IC chips |
JPH04105350A (ja) * | 1990-08-24 | 1992-04-07 | Fujitsu Ltd | 半導体チップの実装構造 |
JPH04112560A (ja) * | 1990-08-31 | 1992-04-14 | Sanyo Electric Co Ltd | 混成集積回路 |
US5287247A (en) * | 1990-09-21 | 1994-02-15 | Lsi Logic Corporation | Computer system module assembly |
JP2901091B2 (ja) * | 1990-09-27 | 1999-06-02 | 株式会社日立製作所 | 半導体装置 |
JPH0547968A (ja) * | 1991-08-20 | 1993-02-26 | Fujitsu Ltd | 電子装置の冷却構造 |
US5272375A (en) * | 1991-12-26 | 1993-12-21 | E. I. Du Pont De Nemours And Company | Electronic assembly with optimum heat dissipation |
JP2677735B2 (ja) * | 1992-05-22 | 1997-11-17 | 三菱電機株式会社 | 混成集積回路装置 |
-
1993
- 1993-10-14 KR KR1019930021249A patent/KR100307465B1/ko not_active IP Right Cessation
- 1993-10-18 US US08/136,881 patent/US5398160A/en not_active Expired - Lifetime
- 1993-10-19 DE DE69325232T patent/DE69325232T2/de not_active Expired - Fee Related
- 1993-10-19 EP EP93308296A patent/EP0594395B1/de not_active Expired - Lifetime
- 1993-10-20 CN CN93119047A patent/CN1036043C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69325232T2 (de) | 2000-02-17 |
EP0594395A2 (de) | 1994-04-27 |
CN1086373A (zh) | 1994-05-04 |
US5398160A (en) | 1995-03-14 |
EP0594395B1 (de) | 1999-06-09 |
KR100307465B1 (ko) | 2001-12-15 |
CN1036043C (zh) | 1997-10-01 |
EP0594395A3 (de) | 1995-01-11 |
KR940010293A (ko) | 1994-05-24 |
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