DE69029340D1 - Halbleiterlaser mit fünfelementigem Verbindungshalbleiter - Google Patents

Halbleiterlaser mit fünfelementigem Verbindungshalbleiter

Info

Publication number
DE69029340D1
DE69029340D1 DE69029340T DE69029340T DE69029340D1 DE 69029340 D1 DE69029340 D1 DE 69029340D1 DE 69029340 T DE69029340 T DE 69029340T DE 69029340 T DE69029340 T DE 69029340T DE 69029340 D1 DE69029340 D1 DE 69029340D1
Authority
DE
Germany
Prior art keywords
semiconductor
element compound
semiconductor laser
compound semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69029340T
Other languages
English (en)
Other versions
DE69029340T2 (de
Inventor
Ako Hatano
Toshihide Izumiya
Yasuo Ohba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69029340D1 publication Critical patent/DE69029340D1/de
Publication of DE69029340T2 publication Critical patent/DE69029340T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
DE69029340T 1989-04-28 1990-04-25 Halbleiterlaser mit fünfelementigem Verbindungshalbleiter Expired - Fee Related DE69029340T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11050289A JP2809691B2 (ja) 1989-04-28 1989-04-28 半導体レーザ

Publications (2)

Publication Number Publication Date
DE69029340D1 true DE69029340D1 (de) 1997-01-23
DE69029340T2 DE69029340T2 (de) 1997-04-30

Family

ID=14537393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69029340T Expired - Fee Related DE69029340T2 (de) 1989-04-28 1990-04-25 Halbleiterlaser mit fünfelementigem Verbindungshalbleiter

Country Status (4)

Country Link
US (1) US5042043A (de)
EP (1) EP0395392B1 (de)
JP (1) JP2809691B2 (de)
DE (1) DE69029340T2 (de)

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JP3425185B2 (ja) * 1993-03-26 2003-07-07 日本オプネクスト株式会社 半導体素子
EP1450415A3 (de) 1993-04-28 2005-05-04 Nichia Corporation Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
JP3116675B2 (ja) 1993-07-28 2000-12-11 ソニー株式会社 半導体レーザー
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
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US5974069A (en) 1994-09-16 1999-10-26 Rohm Co., Ltd Semiconductor laser and manufacturing method thereof
JP3432910B2 (ja) * 1994-09-28 2003-08-04 ローム株式会社 半導体レーザ
JP3442889B2 (ja) * 1994-12-27 2003-09-02 株式会社東芝 半導体発光装置
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US5970080A (en) * 1996-03-07 1999-10-19 Sharp Kabushiki Kaisha Gallium nitride compound semiconductor light emitting element and method for fabricating the same
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DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
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JP3505405B2 (ja) * 1998-10-22 2004-03-08 三洋電機株式会社 半導体素子及びその製造方法
JP4040192B2 (ja) 1998-11-26 2008-01-30 ソニー株式会社 半導体発光素子の製造方法
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
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US6541799B2 (en) 2001-02-20 2003-04-01 Showa Denko K.K. Group-III nitride semiconductor light-emitting diode
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US6730941B2 (en) * 2002-01-30 2004-05-04 Showa Denko Kabushiki Kaisha Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode
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US6831293B2 (en) * 2002-03-19 2004-12-14 Showa Denko Kabushiki Kaisha P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source
US6936863B2 (en) 2002-11-18 2005-08-30 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode
US7508010B2 (en) 2002-12-02 2009-03-24 Showa Denko K.K. Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode
JP3939251B2 (ja) * 2003-01-06 2007-07-04 昭和電工株式会社 リン化硼素系半導体発光素子及びその製造方法
US7365366B2 (en) 2003-01-06 2008-04-29 Showa Denka K.K. Boron phosphide-based semiconductor light-emitting device and production method thereof
US7538361B2 (en) 2003-03-24 2009-05-26 Showa Denko K.K. Ohmic electrode structure, compound semiconductor light emitting device having the same, and LED lamp
JP4518881B2 (ja) * 2003-09-03 2010-08-04 昭和電工株式会社 ｐ形オーミック電極、それを備えた化合物半導体素子、化合物半導体発光素子及びそれらの製造方法
FR2862474B1 (fr) * 2003-11-17 2006-03-03 Nortel Networks Ltd Procede pour effectuer un controle de securite des flux de donnees echangees entre un module et un reseau de communication, et module de communication
US8026525B2 (en) 2004-03-05 2011-09-27 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device
US7573075B2 (en) 2004-03-30 2009-08-11 Showa Denko K.K. Compound semiconductor device, production method of compound semiconductor device and diode
TWI258183B (en) 2004-04-28 2006-07-11 Showa Denko Kk Compound semiconductor light-emitting device
JP4652888B2 (ja) 2004-05-27 2011-03-16 昭和電工株式会社 窒化ガリウム系半導体積層構造体の製造方法
WO2005122289A1 (en) 2004-06-09 2005-12-22 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure
KR100541110B1 (ko) * 2004-06-25 2006-01-11 삼성전기주식회사 다파장 반도체 레이저 제조방법
KR100541111B1 (ko) * 2004-06-25 2006-01-11 삼성전기주식회사 다파장 반도체 레이저 제조방법
KR20070058465A (ko) * 2004-08-06 2007-06-08 미쓰비시 가가꾸 가부시키가이샤 Ｇａ 함유 질화물 반도체 단결정, 그 제조 방법, 그리고 그결정을 사용한 기판 및 디바이스
DE112005002838T5 (de) 2004-11-18 2007-11-15 Showa Denko K.K. Halbleiterstapelstruktur auf Basis von Galliumnitrid, Verfahren zu dessen Herstellung, Halbleitervorrichtung auf Basis von Galliumnitrid und Lampe unter Verwendung der Vorrichtung
JP4880456B2 (ja) * 2004-11-22 2012-02-22 パナソニック株式会社 窒素化合物系半導体装置およびその製造方法
KR100981077B1 (ko) 2005-09-07 2010-09-08 쇼와 덴코 가부시키가이샤 화합물 반도체 소자
US8084781B2 (en) 2005-09-07 2011-12-27 Showa Denko K.K. Compound semiconductor device
KR100868530B1 (ko) * 2006-12-04 2008-11-13 한국전자통신연구원 질화물 반도체 발광 소자
TWI452716B (zh) * 2007-06-08 2014-09-11 Formosa Epitaxy Inc Gallium nitride based light emitting diode and manufacturing method thereof
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
JP6298462B2 (ja) * 2013-06-05 2018-03-20 日東光器株式会社 Ｓｉ基板上に成長した閃亜鉛鉱型（立方晶とも言う。）ＡｌｙＩｎｘＧａ１−ｙ−ｘＮ結晶（ｙ≧０、ｘ＞０）からなる母結晶にナノドット（「量子ドット」とも言う。）を有する活性領域及びこれを用いた発光デバイス（ＬＥＤ及びＬＤ）

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Also Published As

Publication number Publication date
JP2809691B2 (ja) 1998-10-15
EP0395392B1 (de) 1996-12-11
DE69029340T2 (de) 1997-04-30
EP0395392A2 (de) 1990-10-31
JPH02288388A (ja) 1990-11-28
US5042043A (en) 1991-08-20
EP0395392A3 (de) 1991-09-11

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