DE60318172D1 - Polierzusammensetzung und Waschzusammensetzung - Google Patents

Polierzusammensetzung und Waschzusammensetzung

Info

Publication number
DE60318172D1
DE60318172D1 DE60318172T DE60318172T DE60318172D1 DE 60318172 D1 DE60318172 D1 DE 60318172D1 DE 60318172 T DE60318172 T DE 60318172T DE 60318172 T DE60318172 T DE 60318172T DE 60318172 D1 DE60318172 D1 DE 60318172D1
Authority
DE
Germany
Prior art keywords
composition
washing
polishing
polishing composition
washing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60318172T
Other languages
English (en)
Other versions
DE60318172T2 (de
Inventor
Shoji Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Application granted granted Critical
Publication of DE60318172D1 publication Critical patent/DE60318172D1/de
Publication of DE60318172T2 publication Critical patent/DE60318172T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/22—Carbohydrates or derivatives thereof
    • C11D3/222—Natural or synthetic polysaccharides, e.g. cellulose, starch, gum, alginic acid or cyclodextrin
    • C11D3/225—Natural or synthetic polysaccharides, e.g. cellulose, starch, gum, alginic acid or cyclodextrin etherified, e.g. CMC
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3707—Polyethers, e.g. polyalkyleneoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/20—Water-insoluble oxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/268—Carbohydrates or derivatives thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Emergency Medicine (AREA)
  • Materials Engineering (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE60318172T 2002-09-30 2003-09-29 Polierzusammensetzung und Waschzusammensetzung Expired - Lifetime DE60318172T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002287979A JP4212861B2 (ja) 2002-09-30 2002-09-30 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法
JP2002287979 2002-09-30

Publications (2)

Publication Number Publication Date
DE60318172D1 true DE60318172D1 (de) 2008-01-31
DE60318172T2 DE60318172T2 (de) 2008-12-18

Family

ID=32280597

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60318172T Expired - Lifetime DE60318172T2 (de) 2002-09-30 2003-09-29 Polierzusammensetzung und Waschzusammensetzung

Country Status (5)

Country Link
US (3) US7211122B2 (de)
EP (1) EP1424727B1 (de)
JP (1) JP4212861B2 (de)
KR (1) KR101010586B1 (de)
DE (1) DE60318172T2 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128069A (ja) 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
WO2004042812A1 (ja) * 2002-11-08 2004-05-21 Fujimi Incorporated 研磨用組成物及びリンス用組成物
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
WO2005029563A1 (ja) * 2003-09-24 2005-03-31 Nippon Chemical Industrial Co.,Ltd. シリコンウエハ研磨用組成物および研磨方法
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4284215B2 (ja) * 2004-03-24 2009-06-24 株式会社東芝 基板処理方法
JP5164129B2 (ja) * 2004-03-29 2013-03-13 ニッタ・ハース株式会社 半導体研磨用組成物
JP2005303060A (ja) * 2004-04-13 2005-10-27 Nitta Haas Inc リンス研磨溶液
JP2006005246A (ja) * 2004-06-18 2006-01-05 Fujimi Inc リンス用組成物及びそれを用いたリンス方法
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP4808394B2 (ja) * 2004-10-29 2011-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
US7351662B2 (en) * 2005-01-07 2008-04-01 Dupont Air Products Nanomaterials Llc Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
JP2007063374A (ja) * 2005-08-30 2007-03-15 Nitta Haas Inc 研磨組成物用添加剤
US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
JP2007214205A (ja) * 2006-02-07 2007-08-23 Fujimi Inc 研磨用組成物
JP4476232B2 (ja) * 2006-03-10 2010-06-09 三菱重工業株式会社 成膜装置のシーズニング方法
JP5335183B2 (ja) * 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP5357396B2 (ja) * 2007-01-31 2013-12-04 ニッタ・ハース株式会社 研磨組成物用添加剤および研磨組成物の使用方法
US8084406B2 (en) * 2007-12-14 2011-12-27 Lam Research Corporation Apparatus for particle removal by single-phase and two-phase media
JP5474400B2 (ja) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
JP5575735B2 (ja) * 2008-07-03 2014-08-20 株式会社フジミインコーポレーテッド 研磨用組成物濃縮物
DE102008044646B4 (de) * 2008-08-27 2011-06-22 Siltronic AG, 81737 Verfahren zur Herstellung einer Halbleiterscheibe
DE112011101518B4 (de) * 2010-04-30 2019-05-09 Sumco Corporation Verfahren zum Polieren von Siliziumwafern
KR20130014588A (ko) * 2010-07-02 2013-02-07 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법
US20130109180A1 (en) * 2010-07-08 2013-05-02 Sumco Corporation Method for polishing silicon wafer, and polishing solution for use in the method
US9028709B2 (en) * 2010-09-27 2015-05-12 Fujimi Incorporated Surface treatment composition and surface treatment method using same
WO2012102144A1 (ja) 2011-01-26 2012-08-02 株式会社 フジミインコーポレーテッド 研磨用組成物、それを用いた研磨方法及び基板の製造方法
US8309468B1 (en) * 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
US8513128B2 (en) 2011-06-17 2013-08-20 United Microelectronics Corp. Poly opening polish process
US8643069B2 (en) 2011-07-12 2014-02-04 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
SG11201401309PA (en) 2011-10-24 2014-06-27 Fujimi Inc Composition for polishing purposes, polishing method using same, and method for producing substrate
US8673755B2 (en) 2011-10-27 2014-03-18 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
US9006010B2 (en) * 2011-11-22 2015-04-14 General Electric Company Radiation detectors and methods of fabricating radiation detectors
JP5822356B2 (ja) 2012-04-17 2015-11-24 花王株式会社 シリコンウェーハ用研磨液組成物
US9136170B2 (en) 2012-05-30 2015-09-15 United Microelectronics Corp. Through silicon via (TSV) structure and process thereof
JP2014080461A (ja) * 2012-10-12 2014-05-08 Fujimi Inc 研磨用組成物の製造方法及び研磨用組成物
JP5897200B2 (ja) * 2013-02-13 2016-03-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨物製造方法
JP5890583B2 (ja) 2013-02-21 2016-03-22 株式会社フジミインコーポレーテッド 研磨用組成物および研磨物製造方法
US8836129B1 (en) 2013-03-14 2014-09-16 United Microelectronics Corp. Plug structure
JP2014216464A (ja) 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
WO2015019706A1 (ja) * 2013-08-09 2015-02-12 株式会社フジミインコーポレーテッド 研磨済研磨対象物の製造方法および研磨用組成物キット
JP5893706B2 (ja) 2013-10-25 2016-03-23 花王株式会社 シリコンウェーハ用研磨液組成物
JP6266337B2 (ja) 2013-12-25 2018-01-24 ニッタ・ハース株式会社 半導体基板用濡れ剤及び研磨用組成物
JP6343160B2 (ja) * 2014-03-28 2018-06-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP6389630B2 (ja) 2014-03-31 2018-09-12 ニッタ・ハース株式会社 研磨用組成物
JP6314019B2 (ja) 2014-03-31 2018-04-18 ニッタ・ハース株式会社 半導体基板の研磨方法
JP6389629B2 (ja) 2014-03-31 2018-09-12 ニッタ・ハース株式会社 研磨用組成物
WO2016129215A1 (ja) * 2015-02-12 2016-08-18 株式会社フジミインコーポレーテッド シリコンウェーハの研磨方法および表面処理組成物
US10748778B2 (en) 2015-02-12 2020-08-18 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
TWI713611B (zh) * 2015-10-23 2020-12-21 日商霓塔杜邦股份有限公司 研磨用組合物
JP6796978B2 (ja) * 2016-09-23 2020-12-09 株式会社岡本工作機械製作所 半導体装置の製造方法
WO2018079675A1 (ja) 2016-10-28 2018-05-03 花王株式会社 シリコンウェーハ用リンス剤組成物
JP7061862B2 (ja) 2016-10-28 2022-05-02 花王株式会社 シリコンウェーハ用リンス剤組成物
JP6495230B2 (ja) 2016-12-22 2019-04-03 花王株式会社 シリコンウェーハ用リンス剤組成物
KR20200081458A (ko) 2017-11-06 2020-07-07 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 그의 제조 방법
US20210277282A1 (en) * 2018-07-04 2021-09-09 Sumitomo Seika Chemicals Co., Ltd. Polishing composition
CN109648450A (zh) * 2018-12-28 2019-04-19 临安宇杰精密制品有限公司 一种精密元件的抛光、清洗工艺
EP3929154A4 (de) 2019-02-21 2022-04-06 Mitsubishi Chemical Corporation Kieselsäureteilchen und verfahren zu ihrer herstellung, kieselsol, polierzusammensetzung, polierverfahren, verfahren zur herstellung von halbleiter-wafern und verfahren zur herstellung von halbleiterbauelementen
JP2019131814A (ja) * 2019-03-08 2019-08-08 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4588421A (en) * 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers
JPH0623393B2 (ja) 1987-04-27 1994-03-30 日本モンサント株式会社 ウエハーのファイン研磨用の組成物
JP2714411B2 (ja) * 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5053448A (en) * 1989-07-21 1991-10-01 S. C. Johnson & Son, Inc. Polymeric thickener and methods of producing the same
JP4115562B2 (ja) 1997-10-14 2008-07-09 株式会社フジミインコーポレーテッド 研磨用組成物
US6110830A (en) * 1998-04-24 2000-08-29 Micron Technology, Inc. Methods of reducing corrosion of materials, methods of protecting aluminum within aluminum-comprising layers from electrochemical degradation during semiconductor processing methods of forming aluminum-comprising lines
JPH11349925A (ja) * 1998-06-05 1999-12-21 Fujimi Inc エッジポリッシング用組成物
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6258721B1 (en) 1999-12-27 2001-07-10 General Electric Company Diamond slurry for chemical-mechanical planarization of semiconductor wafers
US6709981B2 (en) * 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
TW594444B (en) * 2000-09-01 2004-06-21 Tokuyama Corp Residue cleaning solution
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法

Also Published As

Publication number Publication date
US20070186486A1 (en) 2007-08-16
DE60318172T2 (de) 2008-12-18
US7211122B2 (en) 2007-05-01
JP4212861B2 (ja) 2009-01-21
JP2004128089A (ja) 2004-04-22
EP1424727A1 (de) 2004-06-02
US7687393B2 (en) 2010-03-30
KR20040032051A (ko) 2004-04-14
KR101010586B1 (ko) 2011-01-24
US20040098924A1 (en) 2004-05-27
EP1424727B1 (de) 2007-12-19
US20070186485A1 (en) 2007-08-16

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