DE60045301D1 - Wärmeleitfähige Form und Herstellungsverfahren dafür - Google Patents

Wärmeleitfähige Form und Herstellungsverfahren dafür

Info

Publication number
DE60045301D1
DE60045301D1 DE60045301T DE60045301T DE60045301D1 DE 60045301 D1 DE60045301 D1 DE 60045301D1 DE 60045301 T DE60045301 T DE 60045301T DE 60045301 T DE60045301 T DE 60045301T DE 60045301 D1 DE60045301 D1 DE 60045301D1
Authority
DE
Germany
Prior art keywords
manufacturing
thermally conductive
method therefor
conductive mold
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045301T
Other languages
English (en)
Inventor
Masayuki Tobita
Shinya Tateda
Masahumi Yamato
Tsunehisa Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Polymatech Co Ltd
Original Assignee
Polymatech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Polymatech Co Ltd filed Critical Polymatech Co Ltd
Application granted granted Critical
Publication of DE60045301D1 publication Critical patent/DE60045301D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Moulding By Coating Moulds (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
DE60045301T 1999-12-17 2000-12-01 Wärmeleitfähige Form und Herstellungsverfahren dafür Expired - Lifetime DE60045301D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35864699A JP2001172398A (ja) 1999-12-17 1999-12-17 熱伝導性成形体およびその製造方法

Publications (1)

Publication Number Publication Date
DE60045301D1 true DE60045301D1 (de) 2011-01-13

Family

ID=18460395

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60045301T Expired - Lifetime DE60045301D1 (de) 1999-12-17 2000-12-01 Wärmeleitfähige Form und Herstellungsverfahren dafür

Country Status (4)

Country Link
US (2) US20010004546A1 (de)
EP (1) EP1109218B1 (de)
JP (1) JP2001172398A (de)
DE (1) DE60045301D1 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002069392A (ja) * 2000-08-31 2002-03-08 Polymatech Co Ltd 熱伝導性接着フィルムおよびその製造方法ならびに電子部品
JP2003060134A (ja) * 2001-08-17 2003-02-28 Polymatech Co Ltd 熱伝導性シート
US6921462B2 (en) 2001-12-17 2005-07-26 Intel Corporation Method and apparatus for producing aligned carbon nanotube thermal interface structure
US6965513B2 (en) * 2001-12-20 2005-11-15 Intel Corporation Carbon nanotube thermal interface structures
US6856016B2 (en) 2002-07-02 2005-02-15 Intel Corp Method and apparatus using nanotubes for cooling and grounding die
US7067903B2 (en) * 2002-11-07 2006-06-27 Kabushiki Kaisha Kobe Seiko Sho Heat spreader and semiconductor device and package using the same
US7316061B2 (en) 2003-02-03 2008-01-08 Intel Corporation Packaging of integrated circuits with carbon nano-tube arrays to enhance heat dissipation through a thermal interface
US7168484B2 (en) 2003-06-30 2007-01-30 Intel Corporation Thermal interface apparatus, systems, and methods
US7031162B2 (en) * 2003-09-26 2006-04-18 International Business Machines Corporation Method and structure for cooling a dual chip module with one high power chip
KR100581863B1 (ko) * 2003-10-09 2006-05-22 삼성에스디아이 주식회사 플라즈마 디스플레이 장치
US20050083641A1 (en) * 2003-10-21 2005-04-21 Shu-Ju Lin Central processing unit
US7456052B2 (en) 2003-12-30 2008-11-25 Intel Corporation Thermal intermediate apparatus, systems, and methods
US7180174B2 (en) 2003-12-30 2007-02-20 Intel Corporation Nanotube modified solder thermal intermediate structure, systems, and methods
JP2005331945A (ja) * 2004-05-18 2005-12-02 Samsung Sdi Co Ltd プラズマ表示装置
JP2006273948A (ja) * 2005-03-28 2006-10-12 Mitsui Chemicals Inc 熱伝導性樹脂組成物およびその用途
JP4747926B2 (ja) * 2005-05-25 2011-08-17 東ソー株式会社 ポリアリーレンスルフィド組成物
EP1925026A2 (de) * 2005-08-26 2008-05-28 Cool Options, Inc. Thermisch leitfähige thermoplaste zur verkapselung von mikroelektronik auf chipebene
KR100646404B1 (ko) * 2005-10-26 2006-11-14 주식회사 만도 전자 제어 장치 및 이를 구비한 자동차의 전기식 동력 보조조향장치
JP4747918B2 (ja) 2005-11-04 2011-08-17 東ソー株式会社 ポリアリーレンスルフィド組成物
EP1996465A2 (de) 2006-03-10 2008-12-03 Goodrich Corporation Schutz vor blitzschlägen von geringer dichte zur verwendung in flugzeugen
JP2007286785A (ja) * 2006-04-14 2007-11-01 Fujitsu Ltd 電子機器および冷却部品
JP4747931B2 (ja) * 2006-04-25 2011-08-17 東ソー株式会社 ポリアリーレンスルフィド組成物
JP2007291300A (ja) * 2006-04-27 2007-11-08 Tosoh Corp ポリアリーレンスルフィド組成物
EP2022886B1 (de) 2006-05-02 2013-10-16 Goodrich Corporation Verfahren zur Herstellung nanoverstärkter Kohlenstofffasern sowie nanoverstärkte Kohlenstofffasern enthaltende Flugzeugkomponenten
CN101535176A (zh) * 2006-10-07 2009-09-16 迈图高新材料公司 混合的氮化硼组合物及其制备方法
US20080166563A1 (en) 2007-01-04 2008-07-10 Goodrich Corporation Electrothermal heater made from thermally conducting electrically insulating polymer material
US8404768B2 (en) 2007-01-10 2013-03-26 Momentive Performance Materials Inc. Thermal interface materials and methods for making thereof
JP5042899B2 (ja) * 2008-03-31 2012-10-03 ポリマテック株式会社 熱伝導性シート及びその製造方法
US7906376B2 (en) * 2008-06-30 2011-03-15 Intel Corporation Magnetic particle-based composite materials for semiconductor packages
JP5308859B2 (ja) * 2008-10-20 2013-10-09 株式会社カネカ 高耐光性高熱伝導性照明器具用樹脂成形体
US8277936B2 (en) * 2008-12-22 2012-10-02 E I Du Pont De Nemours And Company Hexagonal boron nitride compositions characterized by interstitial ferromagnetic layers, process for preparing, and composites thereof with organic polymers
US8784980B2 (en) * 2009-05-13 2014-07-22 E I Du Pont De Nemours And Company Film prepared from a casting composition comprising a polymer and surface modified hexagonal boron nitride particles
JP5646823B2 (ja) * 2009-05-27 2014-12-24 株式会社カネカ 高熱伝導性ポリイミドフィルム
US8561934B2 (en) 2009-08-28 2013-10-22 Teresa M. Kruckenberg Lightning strike protection
JP5513840B2 (ja) * 2009-10-22 2014-06-04 電気化学工業株式会社 絶縁シート、回路基板及び絶縁シートの製造方法
JP5759192B2 (ja) * 2010-01-29 2015-08-05 日東電工株式会社 バックライトおよび液晶表示装置
DE102010050900A1 (de) 2010-11-10 2012-05-10 Esk Ceramics Gmbh & Co. Kg Bornitrid-Agglomerate, Verfahren zu deren Herstellung und deren Verwendung
WO2014047274A1 (en) * 2012-09-19 2014-03-27 Momentive Performance Materials Inc. Masterbatch comprising boron nitride, composite powders thereof, and compositions and articles comprising such materials
CN102924923B (zh) * 2012-10-24 2014-12-03 江苏大学 一种高导热磁性金属纤维/硅橡胶复合材料及其制备方法
JP6438701B2 (ja) * 2014-08-18 2018-12-19 パナソニック株式会社 放熱ゴム組成物
US10022896B2 (en) * 2015-11-23 2018-07-17 The Boeing Company Controlling the heating of a composite part
TWI588251B (zh) 2015-12-08 2017-06-21 財團法人工業技術研究院 磁性導熱材料與導熱介電層
JP7120229B2 (ja) * 2017-06-09 2022-08-17 三菱瓦斯化学株式会社 異方性フィラー含有シートの製造方法
EP3460839A1 (de) * 2017-09-21 2019-03-27 GWP Gesellschaft Für Werkstoffprüfung MbH Folien für den einsatz in der halbleitertechnik
WO2019173660A1 (en) * 2018-03-09 2019-09-12 Engi-Mat Co. Thermally conductive composite dielectric materials
US10923412B2 (en) * 2018-08-10 2021-02-16 Cerebras Systems Inc. Apparatuses and methods for implementing a sliding thermal interface between substrates with varying coefficients of thermal expansion
US10811187B2 (en) * 2018-09-18 2020-10-20 Toyota Motor Engineering & Manufacturing North America, Inc. Methods of fabricating thermal composites having specifically designed particle distributions
JP2020055961A (ja) * 2018-10-03 2020-04-09 信越化学工業株式会社 制御された熱伝導率分布を有する樹脂シート及びその製造方法
KR20210066049A (ko) * 2019-11-27 2021-06-07 삼성전자주식회사 반도체 패키지
CN111484627A (zh) * 2020-04-26 2020-08-04 赵汉波 一种功能化氮化硼原位改性环氧树脂绝缘材料及其制法
CN113150557A (zh) * 2021-04-08 2021-07-23 华南理工大学 一种定向排列且构建三维结构提高导热性能的硅橡胶复合材料及其制备方法与应用

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029939B2 (de) * 1972-07-05 1975-09-27
ZA741474B (en) * 1974-03-07 1975-10-29 Edenvale Eng Works Abrasive tools
US4256792A (en) * 1980-01-25 1981-03-17 Honeywell Inc. Composite electronic substrate of alumina uniformly needled through with aluminum nitride
JPS58152033A (ja) * 1982-03-04 1983-09-09 Japan Synthetic Rubber Co Ltd 異方導電性ゴムシ−ト
JPS6169866A (ja) * 1984-09-12 1986-04-10 Polyplastics Co 複合材料組成物
JPH0612643B2 (ja) * 1985-12-25 1994-02-16 信越化学工業株式会社 熱伝導性絶縁シ−ト
JPH0638460B2 (ja) * 1989-11-08 1994-05-18 東海ゴム工業株式会社 放熱シート
WO1995002313A1 (en) * 1993-07-06 1995-01-19 Kabushiki Kaisha Toshiba Heat dissipating sheet
JPH0788971A (ja) * 1993-09-21 1995-04-04 Tokai Rubber Ind Ltd 半導電性シート
JP3698451B2 (ja) * 1995-03-13 2005-09-21 電気化学工業株式会社 シートの製造方法
JPH1160216A (ja) * 1997-08-04 1999-03-02 Shin Etsu Chem Co Ltd 熱伝導性窒化ホウ素フィラー及び絶縁放熱シート
JP3434678B2 (ja) * 1997-09-12 2003-08-11 電気化学工業株式会社 ゴムシートの製造方法
JP3372462B2 (ja) * 1997-11-27 2003-02-04 電気化学工業株式会社 ゴムシートの製造方法
JP3283226B2 (ja) * 1997-12-26 2002-05-20 ポリマテック株式会社 ホルダーの製造法
JP2000281802A (ja) * 1999-03-30 2000-10-10 Polymatech Co Ltd 熱伝導性成形体およびその製造方法ならびに半導体装置
JP4528397B2 (ja) * 1999-12-17 2010-08-18 ポリマテック株式会社 接着方法および電子部品
JP2002069392A (ja) * 2000-08-31 2002-03-08 Polymatech Co Ltd 熱伝導性接着フィルムおよびその製造方法ならびに電子部品

Also Published As

Publication number Publication date
US20030153665A1 (en) 2003-08-14
EP1109218A3 (de) 2003-04-02
EP1109218B1 (de) 2010-12-01
US6761842B2 (en) 2004-07-13
JP2001172398A (ja) 2001-06-26
US20010004546A1 (en) 2001-06-21
EP1109218A2 (de) 2001-06-20

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