US20010004546A1 - Heat conductive mold and manufacturing method thereof - Google Patents

Heat conductive mold and manufacturing method thereof Download PDF

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Publication number
US20010004546A1
US20010004546A1 US09/733,559 US73355900A US2001004546A1 US 20010004546 A1 US20010004546 A1 US 20010004546A1 US 73355900 A US73355900 A US 73355900A US 2001004546 A1 US2001004546 A1 US 2001004546A1
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boron nitride
nitride powder
heat conductive
conductive mold
polymer
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US09/733,559
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Masayuki Tobita
Shinya Tateda
Tsunehisa Kimura
Masahumi Yamato
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Polymatech Co Ltd
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Polymatech Co Ltd
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Assigned to POLYMATECH CO., LTD. reassignment POLYMATECH CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIMURA, TSUNEHISA, TATEDA, SHINYA, TOBITA, MASAYUKI, YAMATO, MASAHUMI
Publication of US20010004546A1 publication Critical patent/US20010004546A1/en
Priority to US10/370,301 priority Critical patent/US6761842B2/en
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737Organic materials with or without a thermoconductive filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29386Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29499Shape or distribution of the fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Definitions

  • the present invention concerns a heat conductive mold of good heat conductivity and manufacturing method thereof.
  • molds filled with highly heat conductive aluminum oxide, boron nitride, aluminum nitride, magnesium oxide, zinc oxide, silicon carbide, quartz, aluminum hydroxide or other metal oxides, metal nitrides, metal carbides, metal hydroxides or other electric insulation fillers are used in practice.
  • flake form boron nitride powder could not deploy enough its heat conductivity in case of sheet-shaped mold where boron nitride power is simply diffused in polymer, because its heat conductivity in the flake thickness direction is lower than the heat conductivity in the surface direction, and the flake is filled with its surface direction in parallel with the sheet thickness direction. Therefore, various methods have been proposed to orient flake form boron nitride powder vertically in the thickness direction of the sheet-shaped mold.
  • the heat conductive insulation sheet disclosed in the Japanese Patent Publication SHOU 62-154410 is a heat conductive insulation sheet made of organo-poly-siloxane and boron nitride powder specifying X-ray diffraction characteristics in the sheet thickness direction, and realized by a method using specific boron nitride powder and a manufacturing method applying a composition including boron nitride powder by ultrasonic commotion.
  • the Japanese Patent Publication HEI 3-151658 is a heat radiation sheet where boron nitride powder is oriented upright in the thickness direction of the sheet, manufactured by a method for thrusting the extruded sheet, or the compression orientation method.
  • the Japanese Patent Publication HEI 8-244094 discloses a manufacturing method for charging flake-shaped particles vertically in the thickness direction of the sheet by the extrusion molding method, the Japanese Patent Publication HEI 11-77795 and the Japanese Patent Publication HEI11-156914 a continuous manufacturing method of rubber sheet for charging boron nitride powder vertically in the thickness direction of the sheet by the extrusion molding method using a die of particular structure.
  • the Japanese Patent Publication Laid-Open No. HEI 11-87483 by the Applicant orients diamagnetic filler of 20Weight/m ⁇ K or more in thermal conductivity in a constant direction in polymer; however, boron nitride powder was not taken into account as diamagnetic material.
  • the present invention concerns a heat conductive mold characterized by that boron nitride powder is field oriented in a constant direction in polymer, a manufacturing method of heat conductive mold characterized by that boron nitride powder is field oriented in a constant direction in a composition by impressing magnetic field to a polymer component including boron nitride powder, and a manufacturing method of heat conductive mold characterized by that boron nitride powder is field oriented in a constant direction in a composition by impressing magnetic field to a liquid polymer component including boron nitride powder and solvent, and set after having removed the solvent.
  • Boron nitride powder used in the present invention is not particularly specified as for the kind of crystalline system, shape or size of powder particle, aggregation rate of powder particle, or their distribution. Concerning the crystalline system, boron nitride powder of hexagonal system, cubic system or other structures can be used. Particularly, highly crystalline boron nitride powder of hexagonal system or cubic system is preferable, because of its excellent thermal conductivity.
  • the particle form of boron nitride powder is not limited to flake form or flat form, but also various other forms of boron nitride powder, such as granular, massive, spherical, fiber, whisker form boron nitride powder, or ground product thereof can be used.
  • the particle diameter of boron nitride powder is not specified; however, individual average primary diameter in the range of 0.01 ⁇ 100 ⁇ m, and more preferably, in the range of 1 ⁇ 50 ⁇ m can be used. Under 0.01 ⁇ m, it is difficult to charge in quantity, and boron nitride powder larger than 100 ⁇ m is difficult to produce, and disadvantageous in terms of price.
  • boron nitride powder As for the flake form boron nitride powder, it is practical to use within the range of 1 ⁇ 1 60 ⁇ m in its maximum diameter, because it can easily be blended with polymer and field oriented. Further, boron nitride powder having a structure where primary particles are aggregated can be used.
  • the present invention is basically different from a conventional manufacturing method of mechanical orientation using boron nitride powder an-isotropic shape and is hardly influenced by the boron nitride powder shape, because it can be field oriented in a way to increase the heat conductivity using the magnetic anisotropy proper to the boron nitride powder.
  • the quantity of boron nitride powder to be contained in polymer is preferably 20 ⁇ 400 weight parts to 100 weight parts of polymer. Less than 20 weight parts, the improvement effect of heat conductivity is small, while the content more than 400 weight parts increases the composition viscosity, reduces the fluidity, making the molding difficult and bubble inclusion inevitable, so it is not appropriate. More preferably, boron nitride powder is added by 30 ⁇ 300 weight parts, and still preferably, by 40 ⁇ 250 weight parts. Higher concentrations may also be obtained by using boron nitride powders of different particle diameter, or by surface treatment.
  • the kind of polymer used for the present invention is not particularly limited. According to the shape, hardness, mechanical nature, thermal nature, electric nature, durability, reliability or other required performances, thermoplastic resins, thermoplastic elastomers, setting resins, reticulated rubbers, or the like can be selected. Polymer used for charging boron nitride powder at a high concentration, polymers and polymer precursors presenting low viscosity in liquid or melt state. Also, it is preferable to reduce the viscosity of polymers or polymer precursors by dissolving with solvent, in order to increase the concentration of boron nitride powder, or to accelerate the field orientation of boron nitride powder in the magnetic field atmosphere.
  • Thermoplastic resins or thermoplastic elastomers used as polymer include polyethylene, polypropylene, ethylene propylene copolymer or other ethyleneaolefin copolymer, polymethylpentene, PVC, polyvinylidene chloride, polyvinyl acetate, ethylene vinylacetate copolymer, polyvinyl alcohol, polyvinylacetal, polyvinylidene fluoride and polytetrafluoroethylene or other fluoric resins, polyethylene terephthalate, polystyrene, polyacrylonitrile, styrene acrylonitrile copolymer, ABS resin, polyphenylene ether and degenerated PPE resin, aliphatic and aromatic polyamides, polyimide, polyamide-imide, polymethacrylic acid and its methylester or other polymethacrylic acid esters, polyacrylic acids, polycarbonate, polyphenylene sulfide, plysulfone, polyether
  • Thermosetting resins and reticulated rubbers include epoxy, polyimide, bismuth imide, benzocyclo butene, phenol, unsaturated polyester, diallyl phtalate, silicone, polyurethane, polyimide silicone, thermosetting type polyphenylene, ether resin and degenerated PPE resin, natural rubber, butadiene rubber, isoprene rubber, styrene butadiene copolymer rubber, nitrile rubber, hydrogenated nitrile rubber, chloroprene, ethylene propylene rubber, chlorinated polyethylene, chlorosulphonated polyethylene, butyl rubber and butyl rubber halide, fluoric rubber, urethane rubber, silicone rubber or other reticulated rubber.
  • the heat conductive mold of the present invention uses preferably, at least one of these polymers selected from silicone rubber, epoxy, polyurethane, unsaturated polyester, polyimide, bismuth imide, benzocyclobutene, fluoric resin, and polyphenylene ether resin, and more preferably, at least one of these polymers selected from silicone rubber, epoxy, polyimide and polyurethane in terms of heat resistance, and electric reliability.
  • these polymers can be a low viscosity liquid for blending with boron nitride powder and can reduce the viscosity when heat melted, and when magnetic field is impressed, boron nitride powder is oriented easily.
  • thermosetting resin or reticulated rubber is not limited to thermosetting, but polymers by publicly known reticulation methods such as photo-setting, hygro-setting, or the like may also be used.
  • the heat conductive mold of the present invention may be used with a small amount of other heat conductive filler of spherical, powder, fiber, needle, flake or whisker form filler made of highly conductive aluminum oxide, aluminum nitride, zinc oxide, silicon carbide, aluminum hydroxide or other metal oxides, metal nitrides, metal carbides, metal hydroxides or metals, alloys, carbon, graphite, and diamond.
  • the manufacturing method of heat conductive mold of the present invention characterized by that boron nitride powder is field oriented in a constant direction in a polymer is characterized by that boron nitride powder in a composition is oriented and set in a constant direction in a composition by impressing magnetic field to a polymer component including boron nitride powder. Further, it is characterized by that boron nitride powder in the composition is oriented in a constant direction in a composition by impressing magnetic field to a polymer component including boron nitride powder and solvent, and set after having removed the solvent.
  • boron nitride powder in order to enhance the heat conductivity in a fixed direction in the vertical direction and in the transversal direction or in the vertical and transversal horizontal directions in a plane of sheet-shaped heat conductive mold, boron nitride powder can be oriented aligned in the direction in the plane by opposing the magnet N pole and S pole vertically to the thickness direction (FIG. 6). Otherwise, boron nitride powder can also be aligned in the direction in the plane by opposing the magnet N pole and N pole, or S pole and S pole in the thickness direction.
  • the magnetic power line is not required to be straight line, but it may be a curve, a rectangle, or two directions or more.
  • the sheet-shaped mold it is also possible place the magnetic power line slant to the sheet thickness, to field orient the flake form boron nitride powder in the slant direction.
  • the boron nitride powder magnetic field orientation method of the present invention is essentially different from the mechanical orientation method of boron nitride powder using fluid field or shearing filed of extrusion molding or press molding proposed in the prior art. In other words, it is possible to obtain a high heat conductivity by orienting boron nitride powder in an arbitrary fixed direction corresponding to the magnetic power line direction.
  • magnets are not required to be opposed at both sides, but it is possible to field orient boron nitride powder in the raw material composition by a magnet disposed only on one side.
  • Magnetic field generation means user as exterior magnetic field may be a permanent magnet, electromagnet or coil, and a flux density range from 0 . 05 to 30 tesla can achieve a practical orientation of boron nitride powder.
  • a very weak an-isotropic magnetization rate of boron nitride powder it is necessary to orient boron nitride powder sufficiently in a stronger magnetic filed atmosphere, and to set matrix polymer by thermosetting reaction or cooling.
  • Preferable magnetic flux density for orientation is 0 . 5 tesla or more, and more preferably, 1 tesla or more.
  • preliminary degreasing or cleaning of the boron nitride powder surface, or surface treatment by silane base, titane base, aluminum bas or other ordinary coupling agents facilitate further the diffusion a blending of a quantity of boron nitride powder, and the obtained mold will have a higher heat conductivity.
  • the heat conductive mold of the present invention can be applied to radiation plate, radiation rubber sheet, semiconductor package component, heat sink, heat spreader, case, belt, roller, tube, tape base material, cap, profile or the like requiring a high heat conductivity.
  • the heat conductive mold of the present invention may also be applied to the wiring substrate.
  • FIG. 1 shows an example of utilization of the heat conductive mold of the present invention (disposed in a gap between a ball grid array type semiconductor package 2 and a radiator 4 );
  • FIG. 2 shows an example of utilization of the heat conductive mold of the present invention (disposed in a gap between a chip size type semiconductor package 2 and a printed circuit board 1 );
  • FIG. 3 shows an example of utilization of the heat conductive mold of the present invention (disposed in a gap between a pin grid array type semiconductor package 2 and a heat sink 5 );
  • FIG. 4 shows an example of utilization of the rubber sheet shape heat conductive mold of a first embodiment of the present invention (disposed in a gap between a plurality of heating semiconductor device 6 and a case 7 );
  • FIG. 5 shows an example of manufacturing method of the heat conductive mold of the present invention
  • FIG. 6 shows another example of manufacturing method of the heat conductive mold of the present invention
  • FIG. 1 ?? FIG. 4 show examples wherein the heat conductive mold 3 obtained by the present invention is interposed between heating semiconductor device 2 , 6 and head conductive members, such as radiator 4 , print circuit board 1 , heat sink 5 , or case 7 .
  • a composition is prepared by blending 100 weight parts of added type liquid silicon rubber (made by GE Toshiba Silicon, TSE 3070 ), 80 weight parts of hexagonal crystalline system flake form boron nitride powder (Denki Kagaku Kogyo K.K., SGP average particle diameter 19 ⁇ m) and 100 weight parts of hexane as solvent.
  • the composition is charged into a plate shape die of 15 mm in thickness, 20 mm in length and 20 mm in width, boron nitride powder is oriented sufficiently under the magnetic field atmosphere where N pole and S pole of 2 tesla in flux density are opposed in the thickness direction, then heat dried to remove solvent hexane, and heat set, to obtain rubber sheet shape heat conductive mold of 1.5 mm in thickness.
  • the heat resistance value of the obtained heat conductive mold was 0.26° C./W.
  • a composition is prepared by blending 100 weight parts of added type liquid silicon rubber (made by GE Toshiba Silicon, TSE 3070 ), and 80 weight parts of hexagonal crystalline system flake form boron nitride powder (Denki Kagaku Kogyo K.K., S G P average particle diameter 19 ⁇ m).
  • the composition is charged into a plate shape die of 15 mm in thickness, 20 mm in length and 20 mm in width and heat set, to obtain rubber sheet shape heat conductive mold.
  • the heat resistance value of the obtained heat conductive mold was 0.38° C./W.
  • a composition is prepared by blending 100 weight parts of liquid epoxy resin (made by Three Bond Co., Ltd. TB 2280 C) and 180 weight parts of hexagonal crystalline system granular boron nitride powder (Showa Denko Co., Ltd. UHP-EX average particle diameter 35 ⁇ m).
  • the composition is charged into a plate shape die of 15 mm in thickness, 20 mm in length and 20 mm in width, boron nitride powder is oriented sufficiently under the magnetic field atmosphere where N pole and S pole of 6 tesla in flux density are opposed in the thickness direction, and heat set, to obtain a hard plate shape heat conductive mold as shown in FIG. 5( 1 ), FIG. 5( 2 ) and FIG. 5( 3 ).
  • the heat resistance value of the obtained heat conductive mold was 0.21° C./W.
  • a composition is prepared by blending 100 weight parts of liquid epoxy resin (made by Three Bond Co., Ltd. TB 2280 C) and 180 weight parts of hexagonal crystalline system granular boron nitride powder (Showa Denko Co., Ltd. UHP-EX average particle diameter 35 ⁇ m).
  • the composition is charged into a plate shape die of 15 mm in thickness, 20 mm in length and 20 mm in width, and heat set, to obtain a hard plate shape heat conductive mold.
  • the heat resistance value of the obtained heat conductive mold was 0.32° C./W.
  • a composition is prepared by blending 100 weight parts of solid portion of polyimide varnish containing N methyl pyrrolidone as solvent (made by Ube Kosan Co., Ltd., Yupifine ST, concentration of solid portion 18 . 5 %) and 60 weight parts of hexagonal crystalline system flake form boron nitride powder (made by Showa Denko Co., Ltd. UHP-S 1 average particle diameter 1 to 2 ⁇ m).
  • the composition is charged into a box die of 20 mm in length, 20 mm in width and 40 mm in depth, boron nitride powder is oriented sufficiently under the magnetic field atmosphere where N pole and S pole of 6 tesla in flux density are opposed in the thickness direction, and heat set after having removed solvent N methyl pyrrolidone, to obtain a film shape heat conductive mold of 120 ⁇ m in thickness.
  • the heat resistance value of the obtained heat conductive mold was 0.18° C./W.
  • a composition is prepared by blending 100 weight parts of solid portion of polyimide varnish containing N methyl pyrrolidone as solvent (made by Ube Kosan Co., Ltd., Yupifine ST, concentration of solid portion 18.5%) and 60 weight parts of hexagonal crystalline system flake form boron nitride powder (made by Showa Denko Co., Ltd. UHP-S 1 average particle diameter 1 to 2 ⁇ m).
  • the composition is charged into a box die of 20 mm in length, 20 mm in width and 40 mm in depth, and heat set after having removed solvent N methyl pyrrolidone, to obtain a film shape heat conductive mold of 120 ⁇ m in thickness.
  • the heat resistance value of the obtained heat conductive mold was 0.27° C./W.
  • Comparison Example 1 Comparison Example 3 are conventional molds wherein flake form boron nitride powder is charged into polymer, and Comparison Example 2 is the one wherein granular boron nitride powder is charged, and they present a high heat resistance value.
  • the heat conductive mold of Example 1 Example 2, Example 3 of the present invention are obtained by impressing magnetic field to the polymer composition containing the same amount of flake form boron nitride powder or granular boron nitride powder as the corresponding Comparison Example, field orienting boron nitride powder in the composition, and then heat setting, and it presents smaller heat resistance value and better heat conductivity than the Comparison Example.
  • the present invention allows to produce a heat conductive mold of excellent heat conductivity, by impressing magnetic field to the polymer composition containing flake form boron nitride powder or granular boron nitride powder, field orienting boron nitride powder in the composition to a fixed direction, and then heat setting.
  • heat conductive mold of the present invention various radiation components requiring a high heat conductivity such as high heat value CPU (central processing unit) or other semiconductors, power source, light source, plasma display, printed circuit board or the like can be supplied.
  • CPU central processing unit
  • other semiconductors power source, light source, plasma display, printed circuit board or the like.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
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  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Moulding By Coating Moulds (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

A heat conductive mold is provided in which boron nitride powder has a magnetic field which is oriented in a fixed direction within a polymer. The polymer is preferably at least one selected from silicon rubber, epoxy, Polyimide and polyurethane. The content of the boron nitride powder is from twenty-two 400 weight parts to 100 weight parts ofpolymer. A method is also provided in which a heat conductive mold of excellent heat conductivity is provided. The method includes impressing a magnetic field to the polymer composition containing boron nitride powder. The magnetic field impressed on the boron nitride powder, in the composition is impressed to have a fixed direction. The field is set after the direction is established. As an alternative, the method may include pressing the magnetic field to the polymer composition including the boron nitride powder and also a solvent.

Description

    FIELD OF THE INVENTION
  • The present invention concerns a heat conductive mold of good heat conductivity and manufacturing method thereof. [0001]
  • PRIOR ARTS
  • Recently, measures against the heat generated from electronic apparatuses are becoming an important issue by the high density implementation of semi-conductor package or higher integration and speed-up of LSI, following the performance enhancement, miniaturization, and weight reduction of electronic apparatuses. Ordinarily, in order to dissipate heat from heating devices, method to use printed circuit boards made of good heat conductive metals or ceramics, method to form a thermal veer hole to radiate heat in the substrate, method to use good heat conductive metals, ceramics or resins as semiconductor package material, method to interpose highly heat conductive grease or flexible heat conductive rubber sheet for the purpose of reducing the contact heat resistance between the heat source and the radiator, or between the heat source and the metallic heat conductive plate, method to use cooling fan, heat pipe or heat dissipation plate, or others are publicly known. [0002]
  • As such heat conductive mold requiring good thermal conductivity, molds filled with highly heat conductive aluminum oxide, boron nitride, aluminum nitride, magnesium oxide, zinc oxide, silicon carbide, quartz, aluminum hydroxide or other metal oxides, metal nitrides, metal carbides, metal hydroxides or other electric insulation fillers are used in practice. [0003]
  • However, flake form boron nitride powder could not deploy enough its heat conductivity in case of sheet-shaped mold where boron nitride power is simply diffused in polymer, because its heat conductivity in the flake thickness direction is lower than the heat conductivity in the surface direction, and the flake is filled with its surface direction in parallel with the sheet thickness direction. Therefore, various methods have been proposed to orient flake form boron nitride powder vertically in the thickness direction of the sheet-shaped mold. [0004]
  • To be more specific, the heat conductive insulation sheet disclosed in the Japanese Patent Publication SHOU 62-154410 is a heat conductive insulation sheet made of organo-poly-siloxane and boron nitride powder specifying X-ray diffraction characteristics in the sheet thickness direction, and realized by a method using specific boron nitride powder and a manufacturing method applying a composition including boron nitride powder by ultrasonic commotion. [0005]
  • The Japanese Patent Publication HEI 3-151658 is a heat radiation sheet where boron nitride powder is oriented upright in the thickness direction of the sheet, manufactured by a method for thrusting the extruded sheet, or the compression orientation method. [0006]
  • The Japanese Patent Publication HEI 8-244094 discloses a manufacturing method for charging flake-shaped particles vertically in the thickness direction of the sheet by the extrusion molding method, the Japanese Patent Publication HEI 11-77795 and the Japanese Patent Publication HEI11-156914 a continuous manufacturing method of rubber sheet for charging boron nitride powder vertically in the thickness direction of the sheet by the extrusion molding method using a die of particular structure. [0007]
  • However, the manufacturing method illustrated in the Japanese Patent Publication SHOU 62-154410 requires ultrasonic commotion machine or other special equipment or treatment processes, or use of specific boron nitride powder making the method inconvenient. [0008]
  • All of methods disclosed in the Japanese Patent Publication HEI 3-151 658, Japanese Patent Publication HEI 8-244094, Japanese Patent Publication HEI 11-77795 and Japanese Patent Publication HEI 11-156 914 use flake form boron nitride powder or the like, require dies of complicated structure or extrusion molding equipment and complicated processing operations, and they were not necessarily simple manufacturing methods. [0009]
  • On the other hand, the Japanese Patent Publication Laid-Open No. HEI 11-87483 by the Applicant orients diamagnetic filler of 20Weight/m·K or more in thermal conductivity in a constant direction in polymer; however, boron nitride powder was not taken into account as diamagnetic material. [0010]
  • SUMMARY OF THE INVENTION
  • To solve these problems, we have studied seriously and found that a heat conductive mold characterized by that boron nitride powder is field oriented in a constant direction in polymer presents a good heat conductivity, a method to manufacture easily a heat conductive mold of good thermal conductivity applying the nature of boron nitride powder to orient along the magnetic power line in a magnetic field, and attained the present invention. [0011]
  • Namely, the present invention concerns a heat conductive mold characterized by that boron nitride powder is field oriented in a constant direction in polymer, a manufacturing method of heat conductive mold characterized by that boron nitride powder is field oriented in a constant direction in a composition by impressing magnetic field to a polymer component including boron nitride powder, and a manufacturing method of heat conductive mold characterized by that boron nitride powder is field oriented in a constant direction in a composition by impressing magnetic field to a liquid polymer component including boron nitride powder and solvent, and set after having removed the solvent. [0012]
  • Boron nitride powder used in the present invention is not particularly specified as for the kind of crystalline system, shape or size of powder particle, aggregation rate of powder particle, or their distribution. Concerning the crystalline system, boron nitride powder of hexagonal system, cubic system or other structures can be used. Particularly, highly crystalline boron nitride powder of hexagonal system or cubic system is preferable, because of its excellent thermal conductivity. [0013]
  • The particle form of boron nitride powder is not limited to flake form or flat form, but also various other forms of boron nitride powder, such as granular, massive, spherical, fiber, whisker form boron nitride powder, or ground product thereof can be used. The particle diameter of boron nitride powder is not specified; however, individual average primary diameter in the range of 0.01˜100 μm, and more preferably, in the range of 1˜50 μm can be used. Under 0.01 μm, it is difficult to charge in quantity, and boron nitride powder larger than 100 μm is difficult to produce, and disadvantageous in terms of price. As for the flake form boron nitride powder, it is practical to use within the range of 1˜1 60 μm in its maximum diameter, because it can easily be blended with polymer and field oriented. Further, boron nitride powder having a structure where primary particles are aggregated can be used. [0014]
  • In particular, the present invention is basically different from a conventional manufacturing method of mechanical orientation using boron nitride powder an-isotropic shape and is hardly influenced by the boron nitride powder shape, because it can be field oriented in a way to increase the heat conductivity using the magnetic anisotropy proper to the boron nitride powder. [0015]
  • The quantity of boron nitride powder to be contained in polymer is preferably 20˜400 weight parts to 100 weight parts of polymer. Less than 20 weight parts, the improvement effect of heat conductivity is small, while the content more than [0016] 400 weight parts increases the composition viscosity, reduces the fluidity, making the molding difficult and bubble inclusion inevitable, so it is not appropriate. More preferably, boron nitride powder is added by 30˜300 weight parts, and still preferably, by 40˜250 weight parts. Higher concentrations may also be obtained by using boron nitride powders of different particle diameter, or by surface treatment.
  • The kind of polymer used for the present invention is not particularly limited. According to the shape, hardness, mechanical nature, thermal nature, electric nature, durability, reliability or other required performances, thermoplastic resins, thermoplastic elastomers, setting resins, reticulated rubbers, or the like can be selected. Polymer used for charging boron nitride powder at a high concentration, polymers and polymer precursors presenting low viscosity in liquid or melt state. Also, it is preferable to reduce the viscosity of polymers or polymer precursors by dissolving with solvent, in order to increase the concentration of boron nitride powder, or to accelerate the field orientation of boron nitride powder in the magnetic field atmosphere. [0017]
  • Thermoplastic resins or thermoplastic elastomers used as polymer include polyethylene, polypropylene, ethylene propylene copolymer or other ethyleneaolefin copolymer, polymethylpentene, PVC, polyvinylidene chloride, polyvinyl acetate, ethylene vinylacetate copolymer, polyvinyl alcohol, polyvinylacetal, polyvinylidene fluoride and polytetrafluoroethylene or other fluoric resins, polyethylene terephthalate, polystyrene, polyacrylonitrile, styrene acrylonitrile copolymer, ABS resin, polyphenylene ether and degenerated PPE resin, aliphatic and aromatic polyamides, polyimide, polyamide-imide, polymethacrylic acid and its methylester or other polymethacrylic acid esters, polyacrylic acids, polycarbonate, polyphenylene sulfide, plysulfone, polyether sulfone, polyether nitrile, polyether ketone, plyketone, liquid crystal polymer, silicone resin, ionomer or other thermoplastic resins, styrene butadiene or styrene isoprene bloc copolymer and their hydrogenated polymer and styrene base thermoplastic elastomers, olefin base thermoplastic elastomers, PVC base thermoplastic elastomers, polyester base thermoplastic elastomers, polyurethane base thermoplastic elastomers, polyamide base thermoplastic elastomers, or other thermoplastic elastomers. [0018]
  • Thermosetting resins and reticulated rubbers include epoxy, polyimide, bismuth imide, benzocyclo butene, phenol, unsaturated polyester, diallyl phtalate, silicone, polyurethane, polyimide silicone, thermosetting type polyphenylene, ether resin and degenerated PPE resin, natural rubber, butadiene rubber, isoprene rubber, styrene butadiene copolymer rubber, nitrile rubber, hydrogenated nitrile rubber, chloroprene, ethylene propylene rubber, chlorinated polyethylene, chlorosulphonated polyethylene, butyl rubber and butyl rubber halide, fluoric rubber, urethane rubber, silicone rubber or other reticulated rubber. [0019]
  • The heat conductive mold of the present invention uses preferably, at least one of these polymers selected from silicone rubber, epoxy, polyurethane, unsaturated polyester, polyimide, bismuth imide, benzocyclobutene, fluoric resin, and polyphenylene ether resin, and more preferably, at least one of these polymers selected from silicone rubber, epoxy, polyimide and polyurethane in terms of heat resistance, and electric reliability. Moreover, these polymers can be a low viscosity liquid for blending with boron nitride powder and can reduce the viscosity when heat melted, and when magnetic field is impressed, boron nitride powder is oriented easily. [0020]
  • For wiring board application or the like requiring low dielectric constant, dielectric tangent and characteristics in high frequency range, fluoric resin or thermosetting type polyphenylene ether resin or degenerated PPE resin, polyolefin base resin are preferable. Further, polymer alloy made of a plurality of polymers selected from these polymers may also be used. The reticulation method of thermosetting resin or reticulated rubber is not limited to thermosetting, but polymers by publicly known reticulation methods such as photo-setting, hygro-setting, or the like may also be used. [0021]
  • The heat conductive mold of the present invention may be used with a small amount of other heat conductive filler of spherical, powder, fiber, needle, flake or whisker form filler made of highly conductive aluminum oxide, aluminum nitride, zinc oxide, silicon carbide, aluminum hydroxide or other metal oxides, metal nitrides, metal carbides, metal hydroxides or metals, alloys, carbon, graphite, and diamond. [0022]
  • PREFERRED EMBODIMENTS OF THE INVENTION
  • The manufacturing method of heat conductive mold of the present invention characterized by that boron nitride powder is field oriented in a constant direction in a polymer is characterized by that boron nitride powder in a composition is oriented and set in a constant direction in a composition by impressing magnetic field to a polymer component including boron nitride powder. Further, it is characterized by that boron nitride powder in the composition is oriented in a constant direction in a composition by impressing magnetic field to a polymer component including boron nitride powder and solvent, and set after having removed the solvent. [0023]
  • It is possible to orient boron nitride powder in a polymer composition in a fixed direction along the magnetic power line, by impressing exterior magnetic field to the composition, using the anisotropy of magnetic susceptibility of boron nitride powder, and to obtain a heat conductive mold whose heat conductivity in the fixed direction is extremely enhanced. For example, in order to align boron nitride powder in the thickness direction of sheet-shaped heat conductive mold, N pole and S pole of permanent magnet or electromagnet are opposed in the thickness direction, and disposed so that the magnetic power line corresponds to the desired orientation direction of boron nitride powder (FIG. 5). On the other hand, in order to enhance the heat conductivity in a fixed direction in the vertical direction and in the transversal direction or in the vertical and transversal horizontal directions in a plane of sheet-shaped heat conductive mold, boron nitride powder can be oriented aligned in the direction in the plane by opposing the magnet N pole and S pole vertically to the thickness direction (FIG. 6). Otherwise, boron nitride powder can also be aligned in the direction in the plane by opposing the magnet N pole and N pole, or S pole and S pole in the thickness direction. Besides, the magnetic power line is not required to be straight line, but it may be a curve, a rectangle, or two directions or more. For the sheet-shaped mold, it is also possible place the magnetic power line slant to the sheet thickness, to field orient the flake form boron nitride powder in the slant direction. [0024]
  • The boron nitride powder magnetic field orientation method of the present invention is essentially different from the mechanical orientation method of boron nitride powder using fluid field or shearing filed of extrusion molding or press molding proposed in the prior art. In other words, it is possible to obtain a high heat conductivity by orienting boron nitride powder in an arbitrary fixed direction corresponding to the magnetic power line direction. In addition, magnets are not required to be opposed at both sides, but it is possible to field orient boron nitride powder in the raw material composition by a magnet disposed only on one side. [0025]
  • Magnetic field generation means user as exterior magnetic field may be a permanent magnet, electromagnet or coil, and a flux density range from [0026] 0.05 to 30 tesla can achieve a practical orientation of boron nitride powder. As the present invention used a very weak an-isotropic magnetization rate of boron nitride powder, it is necessary to orient boron nitride powder sufficiently in a stronger magnetic filed atmosphere, and to set matrix polymer by thermosetting reaction or cooling. Preferable magnetic flux density for orientation is 0.5 tesla or more, and more preferably, 1 tesla or more.
  • In order to improve wetness or adhesivity between boron nitride powder and polymer, preliminary degreasing or cleaning of the boron nitride powder surface, or surface treatment by silane base, titane base, aluminum bas or other ordinary coupling agents facilitate further the diffusion a blending of a quantity of boron nitride powder, and the obtained mold will have a higher heat conductivity. [0027]
  • The heat conductive mold of the present invention can be applied to radiation plate, radiation rubber sheet, semiconductor package component, heat sink, heat spreader, case, belt, roller, tube, tape base material, cap, profile or the like requiring a high heat conductivity. As boron nitride powder is excellent in electric insulation, the heat conductive mold of the present invention may also be applied to the wiring substrate. [0028]
  • BRIEF EXPLANATION OF THE DRAWINGS
  • FIG. 1 shows an example of utilization of the heat conductive mold of the present invention (disposed in a gap between a ball grid array [0029] type semiconductor package 2 and a radiator 4);
  • FIG. 2 shows an example of utilization of the heat conductive mold of the present invention (disposed in a gap between a chip size [0030] type semiconductor package 2 and a printed circuit board 1);
  • FIG. 3 shows an example of utilization of the heat conductive mold of the present invention (disposed in a gap between a pin grid array [0031] type semiconductor package 2 and a heat sink 5);
  • FIG. 4 shows an example of utilization of the rubber sheet shape heat conductive mold of a first embodiment of the present invention (disposed in a gap between a plurality of heating semiconductor device [0032] 6 and a case 7);
  • FIG. 5 shows an example of manufacturing method of the heat conductive mold of the present invention; [0033]
  • FIG. 6 shows another example of manufacturing method of the heat conductive mold of the present invention; [0034]
  • FIG. 1˜FIG. 4 show examples wherein the heat [0035] conductive mold 3 obtained by the present invention is interposed between heating semiconductor device 2, 6 and head conductive members, such as radiator 4, print circuit board 1, heat sink 5, or case 7.
  • Now, the present invention will be described more in detail based on examples. In the following examples and comparison examples, the heat conductivity was evaluated through the measurement of heat resistance value using a transistor (made by Toshiba Corp. TO-[0036] 220).
  • EXAMPLE 1
  • A composition is prepared by blending [0037] 100 weight parts of added type liquid silicon rubber (made by GE Toshiba Silicon, TSE3070), 80 weight parts of hexagonal crystalline system flake form boron nitride powder (Denki Kagaku Kogyo K.K., SGP average particle diameter 19 μm) and 100 weight parts of hexane as solvent. The composition is charged into a plate shape die of 15 mm in thickness, 20 mm in length and 20 mm in width, boron nitride powder is oriented sufficiently under the magnetic field atmosphere where N pole and S pole of 2 tesla in flux density are opposed in the thickness direction, then heat dried to remove solvent hexane, and heat set, to obtain rubber sheet shape heat conductive mold of 1.5 mm in thickness. The heat resistance value of the obtained heat conductive mold was 0.26° C./W.
  • COMPARISON EXAMPLE 1
  • A composition is prepared by blending [0038] 100 weight parts of added type liquid silicon rubber (made by GE Toshiba Silicon, TSE3070), and 80 weight parts of hexagonal crystalline system flake form boron nitride powder (Denki Kagaku Kogyo K.K., S G P average particle diameter 19 μm). The composition is charged into a plate shape die of 15 mm in thickness, 20 mm in length and 20 mm in width and heat set, to obtain rubber sheet shape heat conductive mold. The heat resistance value of the obtained heat conductive mold was 0.38° C./W.
  • EXAMPLE 2
  • A composition is prepared by blending 100 weight parts of liquid epoxy resin (made by Three Bond Co., Ltd. TB[0039] 2280C) and 180 weight parts of hexagonal crystalline system granular boron nitride powder (Showa Denko Co., Ltd. UHP-EX average particle diameter 35 μm). The composition is charged into a plate shape die of 15 mm in thickness, 20 mm in length and 20 mm in width, boron nitride powder is oriented sufficiently under the magnetic field atmosphere where N pole and S pole of 6 tesla in flux density are opposed in the thickness direction, and heat set, to obtain a hard plate shape heat conductive mold as shown in FIG. 5(1), FIG. 5(2) and FIG. 5(3). The heat resistance value of the obtained heat conductive mold was 0.21° C./W.
  • COMPARISON EXAMPLE 2
  • A composition is prepared by blending [0040] 100 weight parts of liquid epoxy resin (made by Three Bond Co., Ltd. TB2280C) and 180 weight parts of hexagonal crystalline system granular boron nitride powder (Showa Denko Co., Ltd. UHP-EX average particle diameter 35 μm). The composition is charged into a plate shape die of 15 mm in thickness, 20 mm in length and 20 mm in width, and heat set, to obtain a hard plate shape heat conductive mold. The heat resistance value of the obtained heat conductive mold was 0.32° C./W.
  • EXAMPLE 3
  • A composition is prepared by blending 100 weight parts of solid portion of polyimide varnish containing N methyl pyrrolidone as solvent (made by Ube Kosan Co., Ltd., Yupifine ST, concentration of solid portion [0041] 18.5%) and 60 weight parts of hexagonal crystalline system flake form boron nitride powder (made by Showa Denko Co., Ltd. UHP-S1 average particle diameter 1 to 2 μm). The composition is charged into a box die of 20 mm in length, 20 mm in width and 40 mm in depth, boron nitride powder is oriented sufficiently under the magnetic field atmosphere where N pole and S pole of 6 tesla in flux density are opposed in the thickness direction, and heat set after having removed solvent N methyl pyrrolidone, to obtain a film shape heat conductive mold of 120 μm in thickness. The heat resistance value of the obtained heat conductive mold was 0.18° C./W.
  • COMPARISON EXAMPLE 3
  • A composition is prepared by blending 100 weight parts of solid portion of polyimide varnish containing N methyl pyrrolidone as solvent (made by Ube Kosan Co., Ltd., Yupifine ST, concentration of solid portion 18.5%) and 60 weight parts of hexagonal crystalline system flake form boron nitride powder (made by Showa Denko Co., Ltd. UHP-S[0042] 1 average particle diameter 1 to 2 μm). The composition is charged into a box die of 20 mm in length, 20 mm in width and 40 mm in depth, and heat set after having removed solvent N methyl pyrrolidone, to obtain a film shape heat conductive mold of 120 μm in thickness. The heat resistance value of the obtained heat conductive mold was 0.27° C./W.
  • Comparison Example 1 Comparison Example 3 are conventional molds wherein flake form boron nitride powder is charged into polymer, and Comparison Example 2 is the one wherein granular boron nitride powder is charged, and they present a high heat resistance value. The heat conductive mold of Example 1 Example 2, Example 3 of the present invention are obtained by impressing magnetic field to the polymer composition containing the same amount of flake form boron nitride powder or granular boron nitride powder as the corresponding Comparison Example, field orienting boron nitride powder in the composition, and then heat setting, and it presents smaller heat resistance value and better heat conductivity than the Comparison Example. [0043]
  • As described above, the present invention allows to produce a heat conductive mold of excellent heat conductivity, by impressing magnetic field to the polymer composition containing flake form boron nitride powder or granular boron nitride powder, field orienting boron nitride powder in the composition to a fixed direction, and then heat setting. [0044]
  • Using the heat conductive mold of the present invention, various radiation components requiring a high heat conductivity such as high heat value CPU (central processing unit) or other semiconductors, power source, light source, plasma display, printed circuit board or the like can be supplied. [0045]

Claims (5)

1. A heat conductive mold, wherein boron nitride powder is magnetic field oriented to a fixed direction in a polymer.
2. The heat conductive mold of
claim 1
, wherein the polymer is at least one selected from silicon rubber, epoxy, polyimide and polyurethane.
3. The heat conductive mold of
claim 1
or
2
, wherein the content of boron nitride powder is 20 to 400 weight parts to 100 weight parts of polymer.
4. A manufacturing method of heat conductive mold of excellent heat conductivity, by impressing magnetic field to the polymer composition containing boron nitride powder, field orienting boron nitride powder in the composition to a fixed direction, and then setting the same.
5. A manufacturing method of heat conductive mold of excellent heat conductivity, by impressing magnetic field to the polymer composition containing boron nitride powder and solvent, field orienting boron nitride powder in the composition to a fixed direction, and then setting the same after having removed the solvent.
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040238946A1 (en) * 2002-11-07 2004-12-02 Kabushik Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Heat spreader and semiconductor device and package using the same
US20050078446A1 (en) * 2003-10-09 2005-04-14 Sung-Won Bae Plasma display apparatus
US20050259401A1 (en) * 2004-05-18 2005-11-24 Chan-Young Han Plasma display device
US20070240869A1 (en) * 2006-04-14 2007-10-18 Fujitsu Limited Electronic apparatus and cooling component
US20090043026A1 (en) * 2005-11-04 2009-02-12 Tosoh Corporation Polyarylene sulfide composition
US20100159244A1 (en) * 2008-12-22 2010-06-24 E.I. Du Pont De Nemours And Company Hexagonal boron nitride compositions characterized by interstitial ferromagnetic layers, process for preparing, and composites thereof with organic polymers
CN102924923A (en) * 2012-10-24 2013-02-13 江苏大学 High thermal conductive magnetic metal fiber/silicon rubber composite material and preparation method thereof
US20200051890A1 (en) * 2018-08-10 2020-02-13 Cerebras Systems Inc. Apparatuses and methods for implementing a sliding thermal interface between substrates with varying coefficients of thermal expansion
US20200090862A1 (en) * 2018-09-18 2020-03-19 Toyota Motor Engineering & Manufacturing North America, Inc. Methods of fabricating thermal composites having specifically designed particle distributions
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US20210074472A1 (en) * 2018-03-09 2021-03-11 Marvis White Thermally conductive composite dielectric materials
US20210159213A1 (en) * 2019-11-27 2021-05-27 Samsung Electronics Co., Ltd. Semiconductor packages
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Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002069392A (en) * 2000-08-31 2002-03-08 Polymatech Co Ltd Heat-conductive adhesive film, method for producing the same and electronic part
JP2003060134A (en) * 2001-08-17 2003-02-28 Polymatech Co Ltd Heat conductive sheet
US6921462B2 (en) 2001-12-17 2005-07-26 Intel Corporation Method and apparatus for producing aligned carbon nanotube thermal interface structure
US6965513B2 (en) * 2001-12-20 2005-11-15 Intel Corporation Carbon nanotube thermal interface structures
US6856016B2 (en) 2002-07-02 2005-02-15 Intel Corp Method and apparatus using nanotubes for cooling and grounding die
US7316061B2 (en) 2003-02-03 2008-01-08 Intel Corporation Packaging of integrated circuits with carbon nano-tube arrays to enhance heat dissipation through a thermal interface
US7168484B2 (en) 2003-06-30 2007-01-30 Intel Corporation Thermal interface apparatus, systems, and methods
US7031162B2 (en) * 2003-09-26 2006-04-18 International Business Machines Corporation Method and structure for cooling a dual chip module with one high power chip
US20050083641A1 (en) * 2003-10-21 2005-04-21 Shu-Ju Lin Central processing unit
US7456052B2 (en) 2003-12-30 2008-11-25 Intel Corporation Thermal intermediate apparatus, systems, and methods
US7180174B2 (en) 2003-12-30 2007-02-20 Intel Corporation Nanotube modified solder thermal intermediate structure, systems, and methods
JP2006273948A (en) * 2005-03-28 2006-10-12 Mitsui Chemicals Inc Thermally-conductive resin composition and use of the same
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EP1925026A2 (en) * 2005-08-26 2008-05-28 Cool Options, Inc. Thermally conductive thermoplastics for die-level packaging of microelectronics
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CN101535176A (en) * 2006-10-07 2009-09-16 迈图高新材料公司 Mixed boron nitride composition and method for making thereof
US20080166563A1 (en) 2007-01-04 2008-07-10 Goodrich Corporation Electrothermal heater made from thermally conducting electrically insulating polymer material
US8404768B2 (en) 2007-01-10 2013-03-26 Momentive Performance Materials Inc. Thermal interface materials and methods for making thereof
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US7906376B2 (en) * 2008-06-30 2011-03-15 Intel Corporation Magnetic particle-based composite materials for semiconductor packages
JP5308859B2 (en) * 2008-10-20 2013-10-09 株式会社カネカ Highly light-resistant and heat-conductive resin molded product for lighting equipment
US8784980B2 (en) * 2009-05-13 2014-07-22 E I Du Pont De Nemours And Company Film prepared from a casting composition comprising a polymer and surface modified hexagonal boron nitride particles
JP5646823B2 (en) * 2009-05-27 2014-12-24 株式会社カネカ High thermal conductivity polyimide film
US8561934B2 (en) 2009-08-28 2013-10-22 Teresa M. Kruckenberg Lightning strike protection
JP5513840B2 (en) * 2009-10-22 2014-06-04 電気化学工業株式会社 Insulating sheet, circuit board, and insulating sheet manufacturing method
JP5759192B2 (en) * 2010-01-29 2015-08-05 日東電工株式会社 Backlight and liquid crystal display device
DE102010050900A1 (en) 2010-11-10 2012-05-10 Esk Ceramics Gmbh & Co. Kg Boron nitride agglomerates, process for their preparation and their use
WO2014047274A1 (en) * 2012-09-19 2014-03-27 Momentive Performance Materials Inc. Masterbatch comprising boron nitride, composite powders thereof, and compositions and articles comprising such materials
JP6438701B2 (en) * 2014-08-18 2018-12-19 パナソニック株式会社 Heat dissipation rubber composition
US10022896B2 (en) * 2015-11-23 2018-07-17 The Boeing Company Controlling the heating of a composite part
TWI588251B (en) 2015-12-08 2017-06-21 財團法人工業技術研究院 Magnetic and thermally conductive material and thermally conductive and dielectric layer
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EP3460839A1 (en) * 2017-09-21 2019-03-27 GWP Gesellschaft Für Werkstoffprüfung MbH Films for use in semiconductor technology

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029939B2 (en) * 1972-07-05 1975-09-27
ZA741474B (en) * 1974-03-07 1975-10-29 Edenvale Eng Works Abrasive tools
US4256792A (en) * 1980-01-25 1981-03-17 Honeywell Inc. Composite electronic substrate of alumina uniformly needled through with aluminum nitride
JPS58152033A (en) * 1982-03-04 1983-09-09 Japan Synthetic Rubber Co Ltd Anisotropic electrically conductive rubber sheet
JPS6169866A (en) * 1984-09-12 1986-04-10 Polyplastics Co Composite material composition
JPH0612643B2 (en) * 1985-12-25 1994-02-16 信越化学工業株式会社 Thermally conductive insulation sheet
JPH0638460B2 (en) * 1989-11-08 1994-05-18 東海ゴム工業株式会社 Heat dissipation sheet
WO1995002313A1 (en) * 1993-07-06 1995-01-19 Kabushiki Kaisha Toshiba Heat dissipating sheet
JPH0788971A (en) * 1993-09-21 1995-04-04 Tokai Rubber Ind Ltd Semiconductive sheet
JP3698451B2 (en) * 1995-03-13 2005-09-21 電気化学工業株式会社 Sheet manufacturing method
JPH1160216A (en) * 1997-08-04 1999-03-02 Shin Etsu Chem Co Ltd Heat conductive boron nitride filler and insulating heat releasing sheet
JP3434678B2 (en) * 1997-09-12 2003-08-11 電気化学工業株式会社 Rubber sheet manufacturing method
JP3372462B2 (en) * 1997-11-27 2003-02-04 電気化学工業株式会社 Rubber sheet manufacturing method
JP3283226B2 (en) * 1997-12-26 2002-05-20 ポリマテック株式会社 How to make a holder
JP2000281802A (en) * 1999-03-30 2000-10-10 Polymatech Co Ltd Thermoconductive formed shape, its production, and semiconductor device
JP4528397B2 (en) * 1999-12-17 2010-08-18 ポリマテック株式会社 Bonding method and electronic component
JP2002069392A (en) * 2000-08-31 2002-03-08 Polymatech Co Ltd Heat-conductive adhesive film, method for producing the same and electronic part

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US20210159213A1 (en) * 2019-11-27 2021-05-27 Samsung Electronics Co., Ltd. Semiconductor packages
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US6761842B2 (en) 2004-07-13
JP2001172398A (en) 2001-06-26
EP1109218A2 (en) 2001-06-20

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