DE467624T1 - Vorrichtung und methode zum schuetzen der rueckseite einer scheibe waehrend der bearbeitung. - Google Patents

Vorrichtung und methode zum schuetzen der rueckseite einer scheibe waehrend der bearbeitung.

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Publication number
DE467624T1
DE467624T1 DE199191306395T DE91306395T DE467624T1 DE 467624 T1 DE467624 T1 DE 467624T1 DE 199191306395 T DE199191306395 T DE 199191306395T DE 91306395 T DE91306395 T DE 91306395T DE 467624 T1 DE467624 T1 DE 467624T1
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Prior art keywords
gas
plate
substrate
holding
surface part
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Pending
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DE199191306395T
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English (en)
Inventor
Eliot K. San Jose California 95148 Broadbent
Michael E. Milpitas California 95035 Thomas
Everhardus P. Cupertino California 95014 Van De Ven
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National Semiconductor Corp
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National Semiconductor Corp
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Publication of DE467624T1 publication Critical patent/DE467624T1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Claims (21)

91306395.4 &Aacgr; ~ Novellus Systems Inc... 0457624 Patentansprüche
1. Vorrichtung zum Halten eines Substrates in einer Prozeßkammer mit
einer Platte, die einen Substrathalter zum Halten des Substrates über einem Oberflächenteil der Platte aufweist, welcher Substrathalter den Rand des zu bearbeitenden Substrates gegenüber dem Plattenoberflächenteil nicht dicht abschließen kann, und
einem Gasverteiler, der im Plattenoberflächenteil vorgesehen ist, um eine Überdruckdifferenz von der Rückseite zur Vorderseite eines gehaltenen Plättchens aufzubauen, wenn ein Gas dort eingeführt wird.
2. Vorrichtung nach Anspruch 1, bei der der Gasverteiler eine Ringnut im Umfang des Plattenoberflächenteils umfaßt.
3. Vorrichtung nach Anspruch 1, bei der der Plattenoberf lächenteil eine Senke in einer Fläche der Platte ist und der Substrathalter aus der Seitenwand der Senke besteht.
4. Vorrichtung nach Anspruch 3, bei der der Gasverteiler eine Ringnut umfaßt, die in der Senke in der Nähe der Seitenwand angeordnet ist.
5. Vorrichtung nach Anspruch 1, bei der der Substrathalter zwei Stifte umfaßt, die von jeweiligen Stellen am Rand des Plattenoberflächenteils vorstehen.
6. Vorrichtung nach Anspruch 5, bei der der Gasverteiler eine Ringnut umfaßt, die im Plattenoberflächenteil in der Nähe der Stifte angeordnet ist.
7. Vorrichtung nach einem der vorhergehenden Ansprüche mit einer Gasleitung, die in einem Stück mit dem Gasverteiler ausgebildet ist und durch die Platte (100) hindurch verläuft.
8. Vorrichtung nach Anspruch 2, 4 oder 6 mit einer Gasleitung, die in einem Stück mit dem Gasverteiler ausgebildet ist und durch die Platte hindurch verläuft, wobei die Gasleitung ein Netz radialer Bohrung in der Platte umfaßt und das Netz der Bohrungen die Ringnut an jeweiligen Ringpositionen schneidet.
9. Vorrichtung nach Anspruch 8, bei der die Bohrungen des Bohrungsnetzes von einem Rand der Platte ausgehen und in der Mitte der Platte zusammenlaufen und bei der eine der Bohrungen mit einer äußeren Gasquelle verbunden werden kann, während die anderen Bohrungen an ihren jeweiligen äußeren Offnungen verstopft sind.
10. Vorrichtung zum Halten einer Vielzahl von Substraten in einer Prozeßkammer mit
einer Vielzahl von Platten jeweils nach Anspruch 7, 8 oder 9,
einer Vielzahl von Heizungen, von denen jede einer jeweiligen Platte zugeordnet ist, um ein Gas vor dem Einführen in die in einem Stück damit ausgebildete Gasleitung der Platte zu erwärmen,
einem Halteblock, der lösbar mit einem Montageblock zur Aufnahme von Gas zusammengepaßt werden kann und durch den Montageblock drehbeweglich ist, und
mehreren Rohren, die jeweils eine jeweilige Heizung mit dem Halteblock zum Halten der Heizung und einer zugehörigen Platte verbinden und ein Gas zuführen.
11. Vorrichtung zum Halten und Transportieren eines Substrates in einer Prozeßkammer mit
einer Platte, die auf einer Basis angebracht ist, wobei die Platte einen Substrathalter zum Halten des Substrates über einem Oberflächenteil der Platte aufweist, welcher Substrathalter den Rand des zu bearbeitenden Substrates gegenüber dem Plattenoberflächenteil nicht dicht abschließen kann,
einem Plättchentransportmechanismus mit einem Arm, welcher Arm wahlweise in einen Ubertragungsbereich über dem Plattenoberflächenteil und in einen Raum von der Platte entfernt bewegbar ist,
einem Gasverteiler, der im Plattenoberflächenteil vorgesehen ist, und
einer Gasleitung in einem Stück mit dem Gasverteiler, die durch die Platte hindurch verläuft, wobei der Gasverteiler bewirkt, daß ein Substrat im Übertragungsbereich auf die Einführung des Gases in die Gasleitung hin schwebt.
12. Vorrichtung nach Anspruch 11, bei der der Arm des Substratübertragungsmechanismus in wenigstens einer Zinke mündet. .
13. Vorrichtung nach Anspruch 11, bei der der Arm des Substratübertragungsmechanismus in zwei engen Zinken endet, welche Zinken im Abstand voneinander angeordnet sind, um ein Substrat zu halten.
14. Vorrichtung nach Anspruch 12 oder 13, bei der die oder jede Zinke perforiert ist.
15. Vorrichtung nach einem der Ansprüche 7 bis 14 mit einer Gasquelle, die mit der Gasleitung verbunden ist.
16. Vorrichtung zum Halten des Substrates in einer Prozeßkammer mit
einer Basis, die in der Kammer angebracht ist,
einer Platte, die auf der Basis angeordnet ist, welche Platte einen Substrathalter zum Halten des Substrats über einem Oberflächenteil der Platte aufweist und der Substrathalter den Rand des zu bearbeitenden Substrates gegenüber dem Plattenoberflächenteil nicht dicht abschließen kann,
einer Einrichtung, die im Plattenoberflächenteil vorgesehen ist, um gleichmäßig ein rückseitiges Gas über einen Umfangsbereich im Plattenoberflächenteil und den rückseitigen Umfangsbereich eines durch den Substrathalter gehaltenen Substrates zu verteilen,
eine Gasleitung, die in einem Stück mit der Gasverteilungseinrichtung ausgebildet ist und durch die Platte hindurch verläuft, und
einer Gasquelle, die mit der Gasleitung verbunden ist, um ein vorgewähltes Volumen des rückseitigen Gases unter Druck zum Gasverteiler während der Einbringung eines Prozeßgases in die Prozeßkammer zu liefern, wobei das Volumen des rückseitigen Gases so gewählt ist, daß sich eine nach außen gerichtete radiale Strömung des rückseitigen Gases durch den Umfangsbereich und in die Prozeßkammer ergibt, welche radiale Strömung nach außen ausreicht, um das Prozeßgas an einem Eindringen in dem Umfangsbereich zu hindern.
17. Vorrichtung nach einem der vorhergehenden Ansprüche, bei der das Gas ein inertes wärmeleitendes Gas ist.
18. Vorrichtung nach Anspruch 17, bei der das Gas Argon ist.
19. Verfahren zum Verringern eines Rückseitenniederschlags auf einem in einer Prozeßkammer gehaltenen Substrat,
bei dem
das Substrat über einer Platte aufgenommen wird,
ein Prozeßgas in die Prozeßkammer eingeführt wird,
ein Volumen eines rückseitigen Gases von der Platte in einen Umfangsbereich zwischen dem rückseitigen Umfang des Substrates und der Platte gleichmäßig verteilt wird und
das Substrat auf der Platte gehalten wird, ohne daß der Rand des zu behandelnden Substrates gegenüber der Platte vollständig dicht abgeschlossen ist, wobei das Volumen des rückseitigen Gases so gewählt ist, daß sich eine nach außen gehende radiale Strömung des rückseitigen Gases durch den Umfangsbereich und in die Prozeßkammer ergibt, welche nach außen gerichtete radiale Strömung ausreicht, um das Prozeßgas an einem Kontakt mit der Rückseite des Substrates zu hindern.
20. Verfahren nach Anspruch 19, bei dem bei der Substrataufnahme ein Substrat in einen Übertragungsbereich über der Platte transportiert wird und ein Volumen des rückseitigen Gases über der Platte verteilt wird, das ausreicht, daß das Substrat über dem Übertragungsbereich schwebt.
21. Verfahren nach Anspruch 19 oder 20, bei dem bei der Substrathalterung das Substrat in einer Senke in der Platte angeordnet wird und das Volumen des rückseitigen Gases so gewählt wird, daß das Substrat über den Boden der Senke und in der Senke gehalten wird.
DE199191306395T 1990-07-16 1991-07-15 Vorrichtung und methode zum schuetzen der rueckseite einer scheibe waehrend der bearbeitung. Pending DE467624T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/554,222 US5133284A (en) 1990-07-16 1990-07-16 Gas-based backside protection during substrate processing

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Publication Number Publication Date
DE467624T1 true DE467624T1 (de) 1992-09-24

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DE69127865T Expired - Fee Related DE69127865T2 (de) 1990-07-16 1991-07-15 Vorrichtung und Methode zum Schützen der Rückseite einer Scheibe während der Bearbeitung

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Country Link
US (2) US5133284A (de)
EP (1) EP0467624B1 (de)
JP (1) JPH06283431A (de)
KR (2) KR100217351B1 (de)
DE (2) DE467624T1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
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DE69127865T2 (de) 1998-02-05
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EP0467624A1 (de) 1992-01-22
EP0467624B1 (de) 1997-10-08
DE69127865D1 (de) 1997-11-13
KR920003410A (ko) 1992-02-29
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US5133284A (en) 1992-07-28
US5679405A (en) 1997-10-21

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