DE69007733D1 - Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck. - Google Patents

Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck.

Info

Publication number
DE69007733D1
DE69007733D1 DE90908310T DE69007733T DE69007733D1 DE 69007733 D1 DE69007733 D1 DE 69007733D1 DE 90908310 T DE90908310 T DE 90908310T DE 69007733 T DE69007733 T DE 69007733T DE 69007733 D1 DE69007733 D1 DE 69007733D1
Authority
DE
Germany
Prior art keywords
disc
treating
flat
low pressure
shaped substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90908310T
Other languages
English (en)
Other versions
DE69007733T2 (de
Inventor
Jan Visser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE3915039A external-priority patent/DE3915039A1/de
Priority claimed from FR8906057A external-priority patent/FR2646861B1/fr
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to DE69007733T priority Critical patent/DE69007733T2/de
Publication of DE69007733D1 publication Critical patent/DE69007733D1/de
Application granted granted Critical
Publication of DE69007733T2 publication Critical patent/DE69007733T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
DE69007733T 1989-05-08 1990-05-07 Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck. Expired - Fee Related DE69007733T2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE69007733T DE69007733T2 (de) 1989-05-08 1990-05-07 Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck.

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE3915039A DE3915039A1 (de) 1989-05-08 1989-05-08 Hubtisch
FR8906057A FR2646861B1 (fr) 1989-05-09 1989-05-09 Appareil de traitement de substrats plans sous vide partiel
PCT/NL1990/000063 WO1990013687A2 (en) 1989-05-08 1990-05-07 Apparatus and method for treating flat substrates under reduced pressure
DE69007733T DE69007733T2 (de) 1989-05-08 1990-05-07 Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck.

Publications (2)

Publication Number Publication Date
DE69007733D1 true DE69007733D1 (de) 1994-05-05
DE69007733T2 DE69007733T2 (de) 1994-09-29

Family

ID=25880670

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69007733T Expired - Fee Related DE69007733T2 (de) 1989-05-08 1990-05-07 Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck.

Country Status (6)

Country Link
US (1) US5177878A (de)
EP (1) EP0423327B1 (de)
JP (1) JP2935474B2 (de)
DE (1) DE69007733T2 (de)
ES (1) ES2054357T3 (de)
WO (1) WO1990013687A2 (de)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273588A (en) * 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
US5444923A (en) * 1993-04-13 1995-08-29 Texas Instruments Incorporated Quick cure exhaust manifold
JP2934565B2 (ja) * 1993-05-21 1999-08-16 三菱電機株式会社 半導体製造装置及び半導体製造方法
JP3165938B2 (ja) * 1993-06-24 2001-05-14 東京エレクトロン株式会社 ガス処理装置
JPH07111244A (ja) * 1993-10-13 1995-04-25 Mitsubishi Electric Corp 気相結晶成長装置
US5588827A (en) * 1993-12-17 1996-12-31 Brooks Automation Inc. Passive gas substrate thermal conditioning apparatus and method
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
KR950025850A (ko) * 1994-02-17 1995-09-18 서성기 박막의 열처리 장치
DE69500566T2 (de) * 1994-02-28 1998-01-29 Applied Materials Inc Elektrostatische Halteplatte
FI96580C (fi) * 1994-04-19 1996-07-25 Outokumpu Mintec Oy Laite suodatuskakun käsittelemiseksi
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5775416A (en) * 1995-11-17 1998-07-07 Cvc Products, Inc. Temperature controlled chuck for vacuum processing
US5828070A (en) * 1996-02-16 1998-10-27 Eaton Corporation System and method for cooling workpieces processed by an ion implantation system
US5740016A (en) * 1996-03-29 1998-04-14 Lam Research Corporation Solid state temperature controlled substrate holder
FR2747112B1 (fr) * 1996-04-03 1998-05-07 Commissariat Energie Atomique Dispositif de transport d'objets plats et procede de transfert de ces objets entre ledit dispositif et une machine de traitement
US5819434A (en) * 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
JPH09326385A (ja) * 1996-06-04 1997-12-16 Tokyo Electron Ltd 基板冷却方法
US6183565B1 (en) 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
US5713138A (en) * 1996-08-23 1998-02-03 Research, Incorporated Coating dryer system
US5886864A (en) * 1996-12-02 1999-03-23 Applied Materials, Inc. Substrate support member for uniform heating of a substrate
DE19781631T1 (de) * 1997-01-02 1999-04-01 Cvc Products Inc Wärmeleitendes Spannfutter für Vakuumbearbeitungsvorrichtung
US5936829A (en) * 1997-01-02 1999-08-10 Cvc Products, Inc. Thermally conductive chuck for vacuum processor
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
ATE218240T1 (de) * 1997-03-12 2002-06-15 Tapematic Spa Vorrichtung zum unterstützen von optischen datenspeicherscheiben
US6138745A (en) * 1997-09-26 2000-10-31 Cvc Products, Inc. Two-stage sealing system for thermally conductive chuck
US6073576A (en) 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
US6210483B1 (en) 1997-12-02 2001-04-03 Applied Materials, Inc. Anti-notch thinning heater
JP3764278B2 (ja) * 1998-07-13 2006-04-05 株式会社東芝 基板加熱装置、基板加熱方法及び基板処理方法
NL1010003C2 (nl) * 1998-09-03 2000-03-13 Asm Int Reactor voorzien van verwarming.
EP1142001B1 (de) * 1998-11-20 2007-10-03 Steag RTP Systems, Inc. Schnell-aufheiz- und -kühlvorrichtung für halbleiterwafer
NL1011487C2 (nl) 1999-03-08 2000-09-18 Koninkl Philips Electronics Nv Werkwijze en inrichting voor het roteren van een wafer.
US6464795B1 (en) * 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6705394B1 (en) 1999-10-29 2004-03-16 Cvc Products, Inc. Rapid cycle chuck for low-pressure processing
NL1013938C2 (nl) * 1999-12-23 2001-06-26 Asm Int Inrichting voor het behandelen van een wafer.
KR100754459B1 (ko) * 1999-12-23 2007-09-03 에이에스엠 인터내셔널 엔.붸. 웨이퍼 처리장치
NL1013984C2 (nl) * 1999-12-29 2001-07-02 Asm Int Werkwijze en inrichting voor het behandelen van substraten.
NL1013989C2 (nl) 1999-12-29 2001-07-02 Asm Int Werkwijze en inrichting voor het behandelen van een wafer.
JP3654142B2 (ja) * 2000-01-20 2005-06-02 住友電気工業株式会社 半導体製造装置用ガスシャワー体
JP3723712B2 (ja) * 2000-02-10 2005-12-07 株式会社日立国際電気 基板処理装置及び基板処理方法
US7037797B1 (en) * 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
US6444027B1 (en) * 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
WO2002013244A2 (en) * 2000-08-08 2002-02-14 Qc Solutions, Inc. Apparatus and method for handling and testing of wafers
DE10055033A1 (de) * 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
DE10056029A1 (de) * 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
US6689221B2 (en) * 2000-12-04 2004-02-10 Applied Materials, Inc. Cooling gas delivery system for a rotatable semiconductor substrate support assembly
US20020083897A1 (en) * 2000-12-29 2002-07-04 Applied Materials, Inc. Full glass substrate deposition in plasma enhanced chemical vapor deposition
JP4644943B2 (ja) * 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US6887803B2 (en) * 2001-11-08 2005-05-03 Wafermasters, Inc. Gas-assisted rapid thermal processing
TW561515B (en) * 2001-11-30 2003-11-11 Tokyo Electron Ltd Processing device, and gas discharge suppressing member
JP3791432B2 (ja) * 2002-02-27 2006-06-28 住友電気工業株式会社 半導体製造用加熱装置
DE10211312A1 (de) 2002-03-14 2003-10-02 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur epitaktischen Beschichtung einer Halbleiterscheibe sowie epitaktisch beschichtete Halbleiterscheibe
AU2003224977A1 (en) * 2002-04-19 2003-11-03 Mattson Technology, Inc. System for depositing a film onto a substrate using a low vapor pressure gas precursor
US6846519B2 (en) * 2002-08-08 2005-01-25 Blue29, Llc Method and apparatus for electroless deposition with temperature-controlled chuck
US6908512B2 (en) * 2002-09-20 2005-06-21 Blue29, Llc Temperature-controlled substrate holder for processing in fluids
US20050051098A1 (en) * 2003-09-05 2005-03-10 Tooru Aramaki Plasma processing apparatus
US7022627B2 (en) 2003-10-31 2006-04-04 Asm International N.V. Method for the heat treatment of substrates
US7410355B2 (en) 2003-10-31 2008-08-12 Asm International N.V. Method for the heat treatment of substrates
US6883250B1 (en) 2003-11-04 2005-04-26 Asm America, Inc. Non-contact cool-down station for wafers
US6940047B2 (en) 2003-11-14 2005-09-06 Asm International N.V. Heat treatment apparatus with temperature control system
KR101112029B1 (ko) * 2004-02-13 2012-03-21 에이에스엠 아메리카, 인코포레이티드 자동 도핑 및 후면 증착의 감소를 위한 기판 지지 시스템
JP4519576B2 (ja) * 2004-08-30 2010-08-04 住友精密工業株式会社 プラズマエッチング装置用基台及びこれを備えたプラズマエッチング装置
US7217670B2 (en) 2004-11-22 2007-05-15 Asm International N.V. Dummy substrate for thermal reactor
US7481312B2 (en) * 2004-12-02 2009-01-27 Hitachi Global Storage Technologies Netherlands B.V. Direct cooling pallet assembly for temperature stability for deep ion mill etch process
US7296420B2 (en) * 2004-12-02 2007-11-20 Hitachi Global Storage Technologies Amsterdam, B.V. Direct cooling pallet tray for temperature stability for deep ion mill etch process
US7462246B2 (en) * 2005-04-15 2008-12-09 Memc Electronic Materials, Inc. Modified susceptor for barrel reactor
JP4553376B2 (ja) * 2005-07-19 2010-09-29 東京エレクトロン株式会社 浮上式基板搬送処理装置及び浮上式基板搬送処理方法
JP4527670B2 (ja) * 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
DE102007026348A1 (de) * 2007-06-06 2008-12-11 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
KR20090001091A (ko) * 2007-06-29 2009-01-08 (주)티티에스 외부발열부재가 구성된 반도체 제조장치
US20090280248A1 (en) * 2008-05-06 2009-11-12 Asm America, Inc. Porous substrate holder with thinned portions
US20110070370A1 (en) * 2008-05-28 2011-03-24 Aixtron Ag Thermal gradient enhanced chemical vapour deposition (tge-cvd)
JP4540731B2 (ja) * 2008-09-29 2010-09-08 積水化学工業株式会社 表面処理用ノズル装置
US20100107974A1 (en) * 2008-11-06 2010-05-06 Asm America, Inc. Substrate holder with varying density
JP4657385B2 (ja) * 2009-04-22 2011-03-23 パナソニック株式会社 薄膜形成装置および薄膜形成方法
DE102009044276A1 (de) 2009-10-16 2011-05-05 Aixtron Ag CVD-Reaktor mit auf einem mehrere Zonen aufweisenden Gaspolster liegenden Substrathalter
JP5778093B2 (ja) 2011-08-10 2015-09-16 エーエスエムエル ネザーランズ ビー．ブイ． 基板テーブルアセンブリ、液浸リソグラフィ装置及びデバイス製造方法
JP5741315B2 (ja) * 2011-08-16 2015-07-01 東京エレクトロン株式会社 膜割れ検出装置及び成膜装置
US20130074358A1 (en) * 2011-09-24 2013-03-28 Quantum Technology Holdings Limited Heated body with high heat transfer rate material and its use
US8697582B2 (en) * 2011-11-22 2014-04-15 Panasonic Corporation Substrate conveying roller, thin film manufacturing device, and thin film manufacturing method
US9916998B2 (en) * 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US11326255B2 (en) * 2013-02-07 2022-05-10 Uchicago Argonne, Llc ALD reactor for coating porous substrates
CN105280518B (zh) * 2014-05-30 2020-09-08 盛美半导体设备(上海)股份有限公司 半导体基板的热处理装置
US10832931B2 (en) * 2014-05-30 2020-11-10 Applied Materials, Inc. Electrostatic chuck with embossed top plate and cooling channels
TWI622091B (zh) * 2015-06-18 2018-04-21 思可林集團股份有限公司 基板處理裝置
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
US11189502B2 (en) * 2018-04-08 2021-11-30 Applied Materials, Inc. Showerhead with interlaced gas feed and removal and methods of use
CN108847382B (zh) * 2018-06-26 2020-10-16 上海华力微电子有限公司 一种气压调节装置、气压调节方法及晶圆刻蚀设备
WO2020090163A1 (ja) * 2018-10-30 2020-05-07 株式会社アルバック 真空処理装置
CN109605067A (zh) * 2019-02-11 2019-04-12 山东交通职业学院 机械加工工装
CN109794787B (zh) * 2019-03-07 2021-02-02 蓝思精密(东莞)有限公司 吸附设备及数控机床
KR20210030074A (ko) * 2019-09-09 2021-03-17 삼성전자주식회사 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치
US11111578B1 (en) 2020-02-13 2021-09-07 Uchicago Argonne, Llc Atomic layer deposition of fluoride thin films
JP2022062986A (ja) * 2020-10-09 2022-04-21 富士電機株式会社 半導体検査装置および半導体ウエハの検査方法
JP2022094023A (ja) * 2020-12-14 2022-06-24 東京エレクトロン株式会社 プラズマ処理装置
US11901169B2 (en) 2022-02-14 2024-02-13 Uchicago Argonne, Llc Barrier coatings

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus
US4512391A (en) * 1982-01-29 1985-04-23 Varian Associates, Inc. Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
JPS60245778A (ja) * 1984-05-21 1985-12-05 Hitachi Ltd 薄膜形成装置
DE3633386A1 (de) * 1986-10-01 1988-04-14 Leybold Ag Verfahren und vorrichtung zum behandeln von substraten im vakuum

Also Published As

Publication number Publication date
ES2054357T3 (es) 1994-08-01
DE69007733T2 (de) 1994-09-29
JP2935474B2 (ja) 1999-08-16
US5177878A (en) 1993-01-12
JPH04500502A (ja) 1992-01-30
WO1990013687A2 (en) 1990-11-15
WO1990013687A3 (en) 1990-12-13
EP0423327B1 (de) 1994-03-30
EP0423327A1 (de) 1991-04-24

Similar Documents

Publication Publication Date Title
DE69007733D1 (de) Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck.
DE69015511D1 (de) Verfahren und Vorrichtung zum Verbinden von Halbleitersubstraten.
DE3862699D1 (de) Vorrichtung zur behandlung eines prozessgases.
DE69200928T2 (de) Verfahren und Vorrichtung zur Herstellung von Stickstoff unter erhöhtem Druck.
DE59000959D1 (de) Verfahren und vorrichtung zum beschichten eines schichttraegers.
DE59200713D1 (de) Verfahren und Vorrichtung zur Behandlung oder Beschichtung von Substraten.
DE342940T1 (de) Vorrichtung und Verfahren zur Beförderung und zur Kühlung von Substraten.
DE3875515T2 (de) Substrat und verfahren zur herstellung eines substrates.
DE3578264D1 (de) Verfahren zur herstellung eines hochwaermeleitenden substrates und kupferleiterblech verwendbar in diesem verfahren.
DE3854541D1 (de) Verfahren und Vorrichtung zur Behandlung eines Materials durch Plasma.
DE69003607D1 (de) Vorrichtung zum agglomerieren und beschichten und agglomerier- und beschichtungsverfahren unter verwendung der vorrichtung.
DE69016809T2 (de) Verfahren und Vorrichtung zur Verdampfung und Zuführung von organometallischen Verbindungen.
DE3767274D1 (de) Waesserige ueberzugszusammensetzung und verfahren zum ueberziehen eines substrats damit.
DE69203127D1 (de) Verfahren zur Behandlung zum Beispiel einer Substratoberfläche durch Spritzen eines Plasmaflusses und Vorrichtung zur Durchführung des Verfahrens.
DE68918691D1 (de) Verfahren und Vorrichtung zum Ausrichten eines bandförmigen Elementes.
DE3788079T2 (de) Verfahren und Vorrichtung zum Ausstreichen eines Kulturmediums.
DE3484059D1 (de) Verfahren und vorrichtung zum beschichten eines substrats.
DE3877201D1 (de) Vorrichtung und verfahren zur intervallbehandlung eines bandes.
DE3886754D1 (de) Vorrichtung zum Plasma- oder reaktiven Ionenätzen und Verfahren zum Ätzen schlecht wärmeleitender Substrate.
DE59105668D1 (de) Verfahren und Vorrichtung zum Herstellen von Druckbehältern sowie Druckbehälter.
DE3763362D1 (de) Verfahren und vorrichtung zum vakuum-verdampfen eines komponentengemisches.
DE69425221T2 (de) Verfahren und Vorrichtung zum Beschichten von flächigen Trägern unter Verwendung eines oszillierenden Futters
DE3878681T2 (de) Verfahren und vorrichtung zur behandlung einer oberflaeche.
ATE335868T1 (de) Vorrichtung und verfahren zum gerichteten aufbringen von depositionsmaterial auf ein substrat
DE69229870T2 (de) Vorrichtung zum einführen von gas, sowie gerät und verfahren zum epitaxialen wachstum.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee