WO2020090163A1 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- WO2020090163A1 WO2020090163A1 PCT/JP2019/028814 JP2019028814W WO2020090163A1 WO 2020090163 A1 WO2020090163 A1 WO 2020090163A1 JP 2019028814 W JP2019028814 W JP 2019028814W WO 2020090163 A1 WO2020090163 A1 WO 2020090163A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Definitions
- the present invention relates to a vacuum processing apparatus including a vacuum chamber capable of forming a vacuum atmosphere and a stage that supports a substrate to be processed in the vacuum chamber.
- a vacuum processing apparatus used for such a vacuum processing, there is known a vacuum processing apparatus including a vacuum chamber capable of forming a vacuum atmosphere and a stage for supporting a substrate to be processed in the vacuum chamber, for example, in Patent Document 1.
- the stage is provided with a base that is selectively cooled and a substrate that is provided on the base so that the substrate to be processed can be controlled to a predetermined temperature above room temperature (for example, 300 ° C.) during vacuum processing.
- a chuck plate that electrostatically attracts a processing substrate and a hot plate interposed between the base and the chuck plate (the chuck plate and the hot plate may be integrally formed). Further, in this device, in order to efficiently heat the substrate to be processed by the hot plate, a heat insulating plate made of an insulating material is further provided between the base and the hot plate, and heat transfer from the hot plate to the base ( Heat sink) is suppressed.
- the substrate to be processed has heat input from other than the hot plate due to the energy of the plasma and the sputtered particles incident on the substrate to be processed. Then, even if the substrate to be processed is controlled to a predetermined temperature above room temperature (for example, 300 ° C.) during vacuum processing, the substrate to be processed may be heated to above this control temperature, and in this case, a film is formed. There is a possibility that the film quality of the thin film may be adversely affected.
- the current supplied to the hot plate should be stopped or reduced, and the hot plate should be cooled. It is necessary to heat the existing base.
- the heat insulating plate is present between the hot plate and the base as in the above-mentioned conventional example, the heat transfer between the hot plate and the base is dominated by radiation. Therefore, heat rays emitted from the hot plate (for example, infrared rays having a wavelength of 4 ⁇ m or less) are transmitted through the heat insulating plate and reflected on the upper surface of the base, and the reflected heat rays are returned to the hot plate again, so that the hot plate is energized. There is a problem that the temperature of the hot plate does not drop early even if the current is stopped or reduced.
- the present invention has been made in view of the above points, and a vacuum processing apparatus capable of controlling a substrate to be processed to a predetermined temperature even when heat is input to the substrate to be processed from a source other than a hot plate during vacuum processing.
- the purpose is to provide.
- a vacuum chamber capable of forming a vacuum atmosphere and a stage for supporting a substrate to be processed in the vacuum chamber
- the stage has a base that is selectively cooled, and a stage on the base.
- the substrate to be electrostatically adsorbed on the surface of the chuck plate is kept at room temperature.
- the vacuum processing apparatus of the present invention which is controllable to the above predetermined temperature, further includes a heat insulating plate that suppresses heat transfer from the hot plate to the base between the base and the hot plate, and the base and the heat insulating plate. And a high emissivity layer having a higher emissivity than the upper surface of the base.
- the high emissivity layer is provided between the base and the heat insulating plate, heat rays emitted from the hot plate are absorbed by the high emissivity layer and transmitted to the base. Therefore, the temperature of the hot plate can be lowered at an early stage by stopping or reducing the current supplied to the hot plate. Therefore, even when heat is applied to the substrate to be processed from other than the hot plate during vacuum processing, the substrate to be processed can be controlled to a predetermined temperature.
- the high emissivity layer has an emissivity of 0.49 or more for heat rays (infrared rays) having a wavelength of 4 ⁇ m or less. If it deviates from this range, there is a problem that the heat rays emitted from the substrate to be processed cannot be efficiently absorbed.
- the high emissivity layer is made of an Al x Ti 1-x N film (0.1 ⁇ x ⁇ 0.95) to ensure that the emissivity of the high emissivity layer is 0.49 or more. can do.
- the high emissivity layer is formed so as to cover the entire upper surface of the base, Since the temperature of the outer peripheral portion is lower than that of the central portion, a temperature difference is likely to occur between the central portion and the outer peripheral portion of the hot plate. Therefore, in the present invention, the high emissivity layer is formed so as to cover a portion of the upper surface of the base other than the outer peripheral portion, thereby suppressing a temperature difference between the central portion and the outer peripheral portion of the hot plate. It is possible and advantageous.
- a vacuum processing apparatus is a magnetron-type sputtering apparatus
- a substrate to be processed is a silicon wafer (hereinafter referred to as “substrate Sw”), and a predetermined thin film is formed on the surface of the substrate Sw is taken as an example.
- substrate Sw silicon wafer
- An embodiment of the vacuum processing apparatus of the present invention will be described. In the following, terms indicating directions such as “up” and “down” are based on the installation posture of the sputtering apparatus as the vacuum processing apparatus shown in FIG.
- SM is the sputtering device of this embodiment.
- the sputtering apparatus SM includes a vacuum chamber 1 capable of forming a vacuum atmosphere.
- a cathode unit 2 is detachably attached to the upper surface opening of the vacuum chamber 1.
- the cathode unit 2 is composed of a target 21 and a magnet unit 22 arranged above the target 21.
- the target 21 a known target such as aluminum, copper, titanium or alumina is used depending on the thin film to be formed on the surface of the substrate Sw.
- the target 21 is attached to the upper portion of the vacuum chamber 1 via the insulator 11 provided on the upper wall of the vacuum chamber 1 in a posture in which the target 21 is bonded to the backing plate 21a with the sputtering surface 21b facing downward.
- the target 21 is connected to an output 21d from a sputtering power source 21c including a DC power source and an AC power source according to the target type.
- a sputtering power source 21c including a DC power source and an AC power source according to the target type.
- a predetermined power having a negative potential or a high frequency with a predetermined frequency is used. Power can be turned on.
- the magnet unit 22 generates a magnetic field in the space below the sputter surface 21b of the target 21, captures the electrons and the like ionized below the sputter surface 21b during sputtering, and efficiently ionizes the sputtered particles scattered from the target 21. Since it has a closed magnetic field or cusp magnetic field structure, detailed description thereof is omitted here.
- a stage 4 is arranged below the vacuum chamber 1 so as to face the target 21.
- the stage 4 is a metal base 41 (for example, made of SUS) having a cylindrical contour, which is installed via an insulator 32 provided in the lower portion of the vacuum chamber 1, and a chuck provided on the base 41. And a plate 42.
- the base 41 is formed with a coolant circulation path 41a for circulating a coolant supplied from a chiller unit (not shown) so that it can be selectively cooled.
- the chuck plate 42 has an outer diameter that is slightly smaller than the upper surface of the base 41, and electrodes for electrostatic chuck are embedded therein.
- the substrate Sw When a voltage is applied to this electrode from a chuck power supply (not shown), the substrate Sw is electrostatically attracted to the upper surface of the chuck plate 42. Further, a hot plate 43 made of, for example, aluminum nitride is interposed between the base 41 and the chuck plate 42. The heating means 43a such as a heater is incorporated in the hot plate 43. By energizing the heating means 43a from the power source 43b, the hot plate 43 can be heated to a predetermined temperature (for example, 300 ° C. to 500 ° C.) according to the energizing current.
- a predetermined temperature for example, 300 ° C. to 500 ° C.
- the substrate Sw can be controlled to a predetermined temperature above room temperature (for example, 350 ° C.) by heating with the hot plate 43 and cooling the base 41 by circulating the coolant.
- a predetermined temperature above room temperature for example, 350 ° C.
- the outline of the upper surface of the hot plate 43 was made between the base 41 and the hot plate 43.
- a heat insulating plate 44 made of an insulating material such as quartz or sapphire is provided.
- a gas pipe 5 for introducing a sputtering gas is connected to the side wall of the vacuum chamber 1, and the gas pipe 5 communicates with a gas source (not shown) via a mass flow controller 51.
- the sputtering gas includes not only a rare gas such as argon gas introduced when plasma is formed in the vacuum chamber 1, but also a reactive gas such as oxygen gas and nitrogen gas.
- An exhaust pipe 62 leading to a vacuum pump 61 composed of a turbo molecular pump, a rotary pump, or the like is connected to the lower wall of the vacuum chamber 1, and the inside of the vacuum chamber 1 is evacuated and a sputtering gas is introduced during sputtering.
- the vacuum chamber 1 can be maintained at a predetermined pressure.
- the stage 4 in the vacuum chamber 1 by covering the outer peripheral portion 43c of the upper surface of the hot plate 43, it functions as a deposition preventive plate that prevents the sputtered particles generated by the sputtering of the target 21 from adhering to the relevant portion 43c.
- Platen rings 7 are provided at intervals.
- the platen ring 7 is made of a known material such as alumina or stainless steel, and is provided on the outer peripheral portion of the upper surface of the base 41 via the insulator 33.
- a deposition preventive plate 8 for preventing the sputtered particles from adhering to the inner wall surface of the vacuum chamber 1 is provided.
- the deposition-inhibitory plate 8 is composed of an upper deposition-inhibition plate 81 and a lower deposition-inhibition plate 82 each made of a known material such as alumina or stainless steel.
- the upper deposition preventing plate 81 has a tubular contour and is suspended via a locking portion 11 provided on the upper portion of the vacuum chamber 1.
- the lower deposition-inhibiting plate 82 also has a tubular contour, and an upstanding wall portion 82a that is erected upward is formed at the free end on the radially outer side thereof.
- a drive shaft 83 a from a drive means 83 such as a motor or an air cylinder, which extends through the lower wall of the vacuum chamber 1 and is connected to the lower attachment plate 82.
- the lower deposition-inhibiting plate 82 is driven by the driving means 83 to a film forming position where the film is formed by sputtering and a position higher than the film forming position, and the substrate Sw is transferred to the stage 4 by a vacuum robot (not shown). Moved up and down between positions.
- the lower end of the upper deposition-inhibiting plate 81 and the upper end of the standing wall 82a are designed to overlap each other in the vertical direction.
- the flat portion 82b of the lower deposition-inhibitory plate 82 extending orthogonally to the vertical direction is sized so that the inner portion in the radial direction faces the platen ring 7.
- one annular protrusion 82c is formed at a predetermined position on the lower surface of the flat portion 82b.
- An annular groove 71 is formed on the upper surface of the platen ring 7 so as to correspond to each protrusion 82c.
- a so-called labyrinth seal is formed by the protrusion 82c of the flat portion 82b and the concave groove 71 of the platen ring 7, and inside the vacuum chamber 1 located below the lower deposition preventive plate 82 around the substrate Sw.
- the sputtering apparatus SM includes a control means (not shown) having a known structure including a microcomputer, a storage element, a sequencer, etc., and the control means includes the sputtering power supply 21c, the power supply 43b, the mass flow controller 51, and the vacuum pump 61. Controls each part during sputtering.
- the control means controls to stop or reduce the current flowing from the power source 43b to the heating means 43a.
- the film forming method will be described below by taking the case where the target 21 is aluminum and an aluminum film is formed on the surface of the substrate Sw by the sputtering apparatus SM as an example.
- the substrate Sw is transferred onto the stage 4 by a vacuum transfer robot (not shown) at the transfer position of the lower deposition prevention plate 82, and the chuck of the stage 4 is chucked.
- the substrate Sw is placed on the upper surface of the plate 42.
- the vacuum transfer robot retreats, the lower deposition preventive plate 82 is moved to the film forming position, and a predetermined voltage is applied to the electrodes of the chuck plate 42 from a power source (not shown) to electrostatically adsorb the substrate Sw on the upper surface of the chuck plate 42. ..
- the hot plate 43 is heated by energizing the heater 43a of the hot plate 43 from the power source 43b, and the base 41 is cooled by the circulation of the refrigerant to the refrigerant circulation path 41a.
- a predetermined temperature equal to or higher than room temperature (for example, 350 ° C.)
- an argon gas as a sputtering gas is introduced at a predetermined flow rate (the pressure in the vacuum chamber 1 at this time is 0.5 Pa).
- a predetermined power for example, 3 kW to 50 kW having a negative potential is applied to the target 21 from the sputtering power source 21c.
- the sputtering surface 21b of the target 21 is sputtered by the ions of the argon gas in the plasma, and the sputtered particles from the target 21 are attached and deposited on the substrate Sw to form an aluminum film. Be filmed.
- the substrate Sw receives heat from other than the hot plate 43 due to the energy of the plasma and the sputtered particles incident on the substrate Sw, and the substrate Sw is heated to a predetermined temperature (for example, during film formation). Even if the temperature is controlled to 350 ° C., the substrate Sw may be heated above the control temperature (for example, 390 ° C.). In this case, it is necessary to stop or reduce the current flowing from the power source 43b to the hot plate 43, and to heat the base plate 41 from the hot plate 43. However, since the heat insulating plate 44 exists, the hot plate 43 and the base plate are present. The heat transfer to and from 41 is dominated by radiation, and the temperature of the hot plate 43 does not drop early.
- a high emissivity layer 45 having a higher emissivity than the upper surface of the base 41 is provided between the base 41 and the heat insulating plate 44, and the hot plate 43 of The radiative cooling effect is enhanced.
- This high emissivity layer 45 has, for example, an Al x Ti 1-x N film (0.1 ⁇ x ⁇ 0. 95). Since the Al x Ti 1-x N film emits less gas when absorbing heat rays, it can be preferably used as the high emissivity layer 45. If the high emissivity layer 45 is made of an Al x Ti 1-x N film (0.8 ⁇ x ⁇ 0.95), the emissivity of the high emissivity layer 45 can be 0.6 or more.
- the high emissivity layer 45 may be formed on the upper surface of the base 41 or the lower surface of the heat insulating plate 44. However, forming the high emissivity layer on the upper surface of the base 41 rather than on the lower surface of the heat insulating plate 44 allows heat rays absorbed by the high emissivity layer 45 to be more absorbed. It can be efficiently transmitted to the base 41.
- a method of forming the high emissivity layer 45 a known method such as a sputtering method or a vacuum vapor deposition method can be used, and therefore detailed description thereof is omitted here.
- the high emissivity layer 45 is provided between the base 41 and the heat insulating plate 44, the heat rays emitted from the hot plate 43 are absorbed by the high emissivity layer 45, and the absorbed heat is absorbed. It can be transmitted to the base 41. That is, the radiative cooling effect of the hot plate 43 is enhanced by the high emissivity layer 45, and heat can be drawn from the hot plate 43 to the base 41. Therefore, the temperature of the hot plate 43 can be lowered early by stopping or lowering the current flowing from the power source 43b to the hot plate 43. Therefore, even when heat is input from other than the hot plate 43 during film formation, the substrate Sw can be controlled to a predetermined temperature.
- the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.
- the vacuum processing apparatus is the sputtering apparatus SM
- the stage 4 having the heat insulating plate 44 between the hot plate 43 and the base 41 is provided in the vacuum chamber 1.
- the present invention can be applied to, for example, a dry etching apparatus, a CVD apparatus, and a heat treatment apparatus as long as it is a vacuum processing apparatus.
- the chuck plate 42 and the hot plate 43 are separately configured, but the chuck plate 42 and the hot plate may be integrally configured by incorporating heating means in the chuck plate 42. Good.
- the heat radiation amount from the outer peripheral portion is larger than the heat radiation amount from the central portion of the hot plate 43, and when the high emissivity layer 45 is formed so as to cover the entire upper surface of the base 41, Since the temperature of the outer peripheral portion is lower than that of the central portion of the hot plate 43, a temperature difference is likely to occur between the central portion and the outer peripheral portion of the hot plate 43. In this case, a vacuum is uniformly applied over the entire surface of the substrate Sw. There is a possibility that processing cannot be performed. Therefore, as shown in FIG.
- the high emissivity layer 45 is formed so as to cover the upper surface of the base 41 excluding the outer peripheral portion 41b, so that the temperature generated between the central portion and the outer peripheral portion of the hot plate 43 is increased. The difference can be suppressed, which is advantageous.
- the Al x Ti 1-x N film (0.1 ⁇ x ⁇ 0.95) is described as the high emissivity layer 45, but the high emissivity layer 45 is not limited to this.
- a surface treatment such as thermal spraying or film formation on the upper surface of the base 41 or the lower surface of the heat insulating plate 44, a high emissivity layer composed of a non-metal film such as Al 2 O 3 or a Ti thermal spray film is formed.
- SM sputtering apparatus (vacuum processing apparatus) 1 ... vacuum chamber, 4 ... stage, 41 ... base, 42 ... chuck plate, 43 ... hot plate, 44 ... heat insulating plate, 45 ... high emissivity layer, Al x Ti 1 -X N film.
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Abstract
Description
Claims (4)
- 真空雰囲気の形成が可能な真空チャンバと、真空チャンバ内で被処理基板を支持するステージとを備え、ステージが、選択的に冷却される基台と、基台上に設けられて被処理基板を静電吸着するチャックプレートと、基台とチャックプレートとの間に介設されたホットプレートとを有し、チャックプレート表面に静電吸着された被処理基板を室温以上の所定温度に制御自在とした真空処理装置であって、
基台とホットプレートとの間に、ホットプレートから基台への伝熱を抑制する断熱プレートを更に備えるものにおいて、
基台と断熱プレートとの間に、基台の上面よりも高い放射率を持つ高放射率層を設けることを特徴とする真空処理装置。 - 前記高放射率層の放射率が0.49以上であることを特徴とする請求項1記載の真空処理装置。
- 前記高放射率層がAlxTi1-xN膜(0.1≦x≦0.95)で構成されることを特徴とする請求項1または請求項2記載の真空処理装置。
- 請求項1~3のいずれか1項記載の真空処理装置において、
前記高放射率層は、基台上面の外周部を除く部分を覆うように形成されていることを特徴とする真空処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2020513370A JP6997863B2 (ja) | 2018-10-30 | 2019-07-23 | 真空処理装置 |
CN201980005399.3A CN111386599B (zh) | 2018-10-30 | 2019-07-23 | 真空处理装置 |
KR1020207034191A KR102503252B1 (ko) | 2018-10-30 | 2019-07-23 | 진공 처리 장치 |
US16/645,611 US20210225681A1 (en) | 2018-10-30 | 2019-07-23 | Vacuum processing apparatus |
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JP2018204437 | 2018-10-30 | ||
JP2018-204437 | 2018-10-30 |
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WO2020090163A1 true WO2020090163A1 (ja) | 2020-05-07 |
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US (1) | US20210225681A1 (ja) |
JP (1) | JP6997863B2 (ja) |
KR (1) | KR102503252B1 (ja) |
CN (1) | CN111386599B (ja) |
TW (1) | TWI781338B (ja) |
WO (1) | WO2020090163A1 (ja) |
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FR3127762B1 (fr) * | 2021-10-05 | 2023-10-13 | Safran Electronics & Defense | Dispositif de chauffage d’un substrat pour dépôt sous vide |
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JP2010041041A (ja) * | 2008-07-10 | 2010-02-18 | Canon Anelva Corp | 基板ホルダ |
JP2017037721A (ja) * | 2015-08-07 | 2017-02-16 | 日本発條株式会社 | ヒータユニット |
JP2018037662A (ja) * | 2011-09-16 | 2018-03-08 | ラム リサーチ コーポレーションLam Research Corporation | プラズマ処理中における磁場パターンの制御/調整方法 |
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US5177878A (en) * | 1989-05-08 | 1993-01-12 | U.S. Philips Corporation | Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices |
EP1219141B1 (en) * | 1999-09-29 | 2010-12-15 | Tokyo Electron Limited | Multi-zone resistance heater |
CN101097849B (zh) * | 2004-07-09 | 2010-08-25 | 积水化学工业株式会社 | 用于处理基板的外周部的方法及设备 |
US9177754B2 (en) * | 2013-02-09 | 2015-11-03 | Varian Medical Systems, Inc. | X-ray tube cooling by emissive heat transfer |
WO2016017047A1 (ja) * | 2014-07-28 | 2016-02-04 | キヤノンアネルバ株式会社 | 成膜方法、真空処理装置、半導体発光素子の製造方法、半導体発光素子、半導体電子素子の製造方法、半導体電子素子、照明装置 |
CN107258012B (zh) | 2015-03-20 | 2021-04-16 | 应用材料公司 | 以高温聚合物接合剂接合至金属基底的陶瓷静电夹盘 |
US10008399B2 (en) | 2015-05-19 | 2018-06-26 | Applied Materials, Inc. | Electrostatic puck assembly with metal bonded backing plate for high temperature processes |
JP6754530B2 (ja) * | 2016-09-06 | 2020-09-16 | 株式会社アルバック | 成膜装置及び成膜方法並びに太陽電池の製造方法 |
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2019
- 2019-07-23 JP JP2020513370A patent/JP6997863B2/ja active Active
- 2019-07-23 CN CN201980005399.3A patent/CN111386599B/zh active Active
- 2019-07-23 WO PCT/JP2019/028814 patent/WO2020090163A1/ja active Application Filing
- 2019-07-23 US US16/645,611 patent/US20210225681A1/en not_active Abandoned
- 2019-07-23 KR KR1020207034191A patent/KR102503252B1/ko active IP Right Grant
- 2019-07-31 TW TW108127121A patent/TWI781338B/zh active
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JP2010041041A (ja) * | 2008-07-10 | 2010-02-18 | Canon Anelva Corp | 基板ホルダ |
JP2018037662A (ja) * | 2011-09-16 | 2018-03-08 | ラム リサーチ コーポレーションLam Research Corporation | プラズマ処理中における磁場パターンの制御/調整方法 |
JP2017037721A (ja) * | 2015-08-07 | 2017-02-16 | 日本発條株式会社 | ヒータユニット |
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TW202033798A (zh) | 2020-09-16 |
JP6997863B2 (ja) | 2022-01-18 |
CN111386599B (zh) | 2023-09-05 |
KR20210005187A (ko) | 2021-01-13 |
TWI781338B (zh) | 2022-10-21 |
KR102503252B1 (ko) | 2023-02-23 |
JPWO2020090163A1 (ja) | 2021-02-15 |
US20210225681A1 (en) | 2021-07-22 |
CN111386599A (zh) | 2020-07-07 |
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