TWI781338B - 真空處理裝置 - Google Patents

真空處理裝置 Download PDF

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TWI781338B
TWI781338B TW108127121A TW108127121A TWI781338B TW I781338 B TWI781338 B TW I781338B TW 108127121 A TW108127121 A TW 108127121A TW 108127121 A TW108127121 A TW 108127121A TW I781338 B TWI781338 B TW I781338B
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藤井佳詞
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Abstract

本發明係提供一種真空處理裝置，其係構成為，即使於在真空處理中存在有從熱板以外而來之對被處理基板之導入熱的情況，也可將被處理基板控制為特定溫度。 本發明之真空處理裝置(SM)，係具備可形成真空氛圍的真空腔(1)、和在真空腔內支持被處理基板(Sw)的平台(4)，平台，係具有可作選擇性地冷卻的基台(41)、和被設置於基台上來將被處理基板靜電吸附的吸盤板(42)、以及被中介設置於基台與吸盤板之間的熱板(43)，而將被靜電吸附於吸盤板表面的被處理基板自由控制為室溫以上的特定溫度，且本發明之真空處理裝置(SM)，係於基台與熱板之間，進一步具備對於從熱板而至基台之導熱作抑制的隔熱板(44)，並於基台與隔熱板之間，設置具有較基台的上面更高之輻射率的高輻射率層(45)。

Description

真空處理裝置
本發明係關於一種真空處理裝置，其係具備可形成真空氛圍的真空腔、和在真空腔內支持被處理基板的平台。
例如，於半導體裝置之製造工程中，係具有：對於矽晶圓等之被處理基板，實施成膜處理或蝕刻處理等之真空處理。例如，於專利文獻1中已知有：作為被使用於這種真空處理的真空處理裝置，而具備可形成真空氛圍的真空腔、和在真空腔內支持被處理基板的平台。於此裝置中，為了在真空處理中可將被處理基板控制為室溫以上之特定溫度(例如，300℃)，平台，係具有可作選擇性地冷卻的基台、和被設置於基台上來將被處理基板靜電吸附的吸盤板、以及被中介設置於基台與吸盤板之間的熱板(吸盤板與熱板亦可被形成為一體)。又，於此裝置中，為了藉由熱板來對被處理基板作有效率地加熱，係於基台與熱板之間進一步設置絕緣材料製之隔熱板，而抑制從熱板而至基台之導熱(引熱)。
另外，於上述真空處理裝置之中，係存在有例如濺鍍裝置一般地，於真空腔內產生電漿，並使靶材之濺鍍所產生的濺鍍粒子附著、堆積而實施成膜處理者。此時，於被處理基板，係存在有起因於電漿或射入至被處理基板的濺鍍粒子所具有的能量之來自熱板以外的導入熱。是故，即使於真空處理中將被處理基板控制為室溫以上之特定溫度(例如，300℃)，亦存在有被處理基板會被加熱至此控制溫度以上的情況，如此一來，會有對所成膜之薄膜的膜質等造成不良影響之虞。
因此，當被處理基板被加熱至控制溫度以上時，為了使熱板的溫度盡可能地迅速下降，係有必要使對熱板之通電電流停止或降低，並且從熱板引熱至被作冷卻的基台。然而，如上述以往例一般地，若是於熱板與基台之間存在有隔熱板，則於熱板與基台之間的熱移動，係以輻射為具有支配性。因此，從熱板所釋出的熱射線(例如，波長4μm以下之紅外線)，會成為透過隔熱板而在基台上面反射，且反射後的熱射線，會再度回到熱板，而存在有即便使對熱板之通電電流停止或降低，熱板的溫度也不會快速降低的問題。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特表2018-518833號公報
[發明所欲解決之課題]
本發明係鑑於以上之點而完成者，其目的為提供一種真空處理裝置，其係即使於在真空處理中存在有從熱板以外而來之對被處理基板之導入熱的情況，也可將被處理基板控制為特定溫度。 [用以解決課題之手段]
為了解決上述課題，本發明之真空處理裝置，係具備可形成真空氛圍的真空腔、和在真空腔內支持被處理基板的平台，平台，係具有可作選擇性地冷卻的基台、和被設置於基台上來將被處理基板靜電吸附的吸盤板、以及被中介設置於基台與吸盤板之間的熱板，而將被靜電吸附於吸盤板表面的被處理基板自由控制為室溫以上的特定溫度，其特徵為，係於基台與熱板之間，進一步具備對於從熱板而至基台之導熱作抑制的隔熱板，並於基台與隔熱板之間，設置具有較基台的上面更高之輻射率的高輻射率層。
若依據本發明，則由於在基台與隔熱板之間設置有高輻射率層，因此從熱板所釋出的熱射線會被高輻射率層所吸收，而傳導至基台。因此，只要使對熱板之通電電流停止或降低，則可使熱板的溫度快速下降。因而，即使於在真空處理中存在有從熱板以外而來之對被處理基板之導入熱的情況，也可將被處理基板控制為特定溫度。
於本發明中，較理想係，前述高輻射率層相對於例如波長4μm以下的熱射線(紅外線)之輻射率為0.49以上。若偏離此範圍，則存在有無法有效率地吸收從被處理基板所釋出的熱射線之問題。於此情況中，藉由將前述高輻射率層以Alx Ti1-x N膜(0.1≦x≦0.95)來構成，而可使前述高輻射率層之輻射率確實地成為0.49以上。
另外，相較於來自熱板之中央部的熱射線釋出量而來自外周部的熱射線釋出量較多一事係為已知，若以覆蓋基台上面的全面的方式來形成高輻射率層，則相較於熱板之中央部，外周部的溫度會變低，而在熱板之中央部與外周部之間容易產生溫度差。因此，於本發明中，係藉由以覆蓋前述基台上面之除了外周部以外的部分的方式來形成前述高輻射率層，而可對在熱板之中央部與外周部之間產生的溫度差作抑制，而為有利。
以下，參照附圖，以將真空處理裝置設為磁控管方式之濺鍍裝置、將被處理基板設為矽晶圓(以下，稱為「基板Sw」)，並於基板Sw表面成膜特定的薄膜之情況為例，來說明本發明之真空處理裝置的實施形態。於以下內容中，代表「上」、「下」之方向的用語，係以第1圖展示之作為真空處理裝置的濺鍍裝置之設置姿勢作為基準。
參照第1圖，SM係為本實施形態之濺鍍裝置。濺鍍裝置SM，係具備可形成真空氛圍的真空腔1。於真空腔1的上面開口，係可裝卸地安裝有陰極單元2。陰極單元2，係以靶材21、和被配置於此靶材21的上方之磁鐵單元22，而構成之。作為靶材21，係因應於想要成膜於基板Sw表面的薄膜，而利用鋁、銅、鈦或氧化鋁等周知者。接著，靶材21，係在接合於背板21a的狀態下，隔著以濺鍍面21b成為下方的姿勢來設置於真空腔1的上壁之絕緣體11而被安裝於真空腔1的上部。
於靶材21，係因應於靶材種類而連接有來自由直流電源或交流電源等所構成之濺鍍電源21c之輸出21d，並因應於靶材種類，而被構成為可投入具有例如負的電位之特定電力或特定頻率之高頻電力。磁鐵單元22，係為具有：於靶材21的濺鍍面21b之下方空間產生磁場，而於濺鍍時在濺鍍面21b的下方捕捉電離的電子等並將從靶材21飛散的濺鍍粒子有效率地離子化之周知的閉鎖磁場或是尖點磁場構造者，在此係省略詳細的說明。
於真空腔1的下部，係與靶材21相對向地配置有平台4。平台4，係具有：隔著設置於真空腔1的下部之絕緣體32而被作設置之具有筒狀的輪廓之金屬製(例如SUS製)的基台41、和被設置於此基台41上的吸盤板42。於基台41，係形成有讓從圖外之冷卻單元所供給的冷媒循環之冷媒循環路41a，並被構成為可選擇性地冷卻。吸盤板42，係具有較基台41的上面更小上一圈的外徑，並埋設有靜電吸盤用的電極。若對於此電極從圖外之吸盤電源施加電壓，則基板Sw會被靜電吸附於吸盤板42上面。又，於基台41與吸盤板42之間，例如，係中介設置有氮化鋁製之熱板43。於熱板43，係組裝有例如加熱器等之加熱手段43a。藉由對於此加熱手段43a從電源43b通電，而可將熱板43加熱至與通電電流相對應之特定溫度(例如，300℃～500℃)。接著，藉由以熱板43所致之加熱、與以冷媒循環所致之基台41之冷卻，而可將基板Sw控制為室溫以上之特定溫度(例如，350℃)。在此，為了對於從被加熱的熱板43而至被冷卻的基台41之導熱作抑制，於基台41與熱板43之間，係設置有與熱板43之上面的輪廓一致之例如石英或藍寶石等之絕緣材料製的隔熱板44。
於真空腔1的側壁，係連接有將濺鍍氣體導入的氣體管5，氣體管5，係經由質量流控制器51來與圖示省略之氣體源相連通。於濺鍍氣體中，係不僅包含有在形成電漿時被導入真空腔1內的氬氣等之稀有氣體，也包含有氧氣或氮氣等之反應氣體。於真空腔1的下壁，係連接有與以渦輪分子幫浦或旋轉幫浦等所構成之真空幫浦61相通的排氣管62，構成為，可將真空腔1內進行真空吸引，而於濺鍍時在導入有濺鍍氣體的狀態下將真空腔1保持在特定壓力。
在真空腔1內，於平台4的周圍，係存在有間隔地而設置有板環7，該板環7，係藉由覆蓋熱板43上面的外周部分43c，而發揮作為防止因靶材21的濺鍍所產生之濺鍍粒子附著於該部分43c的防附著板之功能。板環7，係為氧化鋁、不鏽鋼等之周知的材料製，並隔著絕緣體33而被設置於基台41上面的外周部分。又，於真空腔1內，係設置有防止濺鍍粒子附著於真空腔1的內壁面的防附著板8。防附著板8，係以分別為氧化鋁、不鏽鋼等之周知的材料製的上防附著板81與下防附著板82所構成。上防附著板81，係具有筒狀的輪廓，並經由設置於真空腔1的上部之卡止部11而被作吊設。下防附著板82，亦具有筒狀的輪廓，於其徑方向外側的自由端，係形成有朝向上方立起的豎立壁部82a。於下防附著板82，係連結有貫通真空腔1的下壁而延伸之來自馬達或空氣汽缸等之驅動手段83的驅動軸83a。藉由驅動手段83，下防附著板82，係在成膜位置與搬送位置之間上下移動，該成膜位置係實施藉由濺鍍所致之成膜的位置；該搬送位置，係較成膜位置更高，實施藉由圖外之真空機器人所致之對於平台4之基板Sw之授受的位置。在下防附著板82之成膜位置，係被設計成，上防附著板81的下端部與豎立壁部82a的上端部係在上下方向相互重疊。
與上下方向正交地而延伸的下防附著板82之平坦部82b，係以使其徑方向之內側部與板環7相對向的方式來制定尺寸。於平坦部82b下面的特定位置處，係形成有例如1個的環狀的突條82c。與各突條82c相對應地，於板環7的上面係被形成有環狀的凹溝71。接著，在成膜位置，係藉由平坦部82b的突條82c與板環7的凹溝71而形成有所謂迷宮式密封(labyrinth seal)，並構成為可防止濺鍍粒子之對於基板Sw的周圍之位置於下防附著板82之下方的真空腔1內的空間之繞入。又，濺鍍裝置SM，係具備：具備有微電腦、記憶元件或序列器等之周知的構造之控制手段(圖示省略)，此控制手段，係統籌進行濺鍍電源21c、電源43b、質量流控制器51或真空幫浦61等之濺鍍時的各零件之控制等。又，控制手段，在將熱板43的溫度降低的情況，係進行使從電源43b對於加熱手段43a之通電電流停止或降低的控制。以下，以將靶材21設為鋁，並藉由上述濺鍍裝置SM而於基板Sw表面成膜鋁膜的情況為例來對於成膜方法進行說明。
在使真空幫浦61作動來將真空腔1內真空排氣之後，在下防附著板82之搬送位置，藉由圖外的真空搬送機器人而將基板Sw搬送至平台4上，並將基板Sw載置於平台4之吸盤板42上面。若真空搬送機器人退避，則將下防附著板82移動到成膜位置，並且對於吸盤板42之電極而從圖外的電源施加特定電壓，以將基板Sw靜電吸附於吸盤板42上面。與此一併地，藉由對於熱板43的加熱器43a之來自電源43b的通電而將熱板43加熱，並且藉由對於冷媒循環路41a之冷媒的循環而將基台41冷卻。若基板Sw的溫度達到室溫以上的特定溫度(例如，350℃)，則將作為濺鍍氣體的氬氣以特定的流量導入(此時之真空腔1內的壓力為0.5Pa)，與此一併地，對於靶材21從濺鍍電源21c投入具有負的電位的特定電力(例如，3kW～50kW)。藉由此，於真空腔1內形成電漿，藉由電漿中之氬氣的離子而使靶材21之濺鍍面21b被濺鍍，來自靶材21的濺鍍粒子會附著、堆積於基板Sw，而使鋁膜成膜。
在此，如上述般地，於基板Sw，係存在有起因於電漿或射入至基板Sw的濺鍍粒子所具有之能量所導致的來自熱板43以外的導入熱，即使於成膜中將基板Sw控制在特定溫度(例如350℃)，也有基板被加熱至此控制溫度以上(例如390℃)的情況。於此情況中，雖有必要使從電源43b對於熱板43之通電電流停止或降低，並且從熱板43引熱至基台41，但由於存在有隔熱板44，因此在熱板43與基台41之間的熱移動，係以因輻射所致者為具有支配性，熱板43的溫度並不會快速下降。
因此，於本實施形態中，亦參照第2圖，構成為，於基台41與隔熱板44之間，設置具有較基台41之上面更高輻射率的高輻射率層45，而提高熱板43之輻射冷卻效果。此高輻射率層45，係為了使相對於例如波長4μm以下之熱射線(紅外線)而言具有0.49以上之輻射率，而以例如Alx Ti1-x N膜(0.1≦x≦0.95)所構成。Alx Ti1-x N膜，係由於吸收了熱射線時之釋出氣體為少，因此可作為高輻射率層45而適宜使用。另外，若是將高輻射率層45以Alx Ti1-x N膜(0.8≦x≦0.95)來構成，則可將高輻射率層45之輻射率設為0.6以上，而較理想。高輻射率層45，係只要被形成於基台41上面或隔熱板44下面即可，但是，相較於形成於隔熱板44下面，係以形成於基台41上面者，更能夠將在高輻射率層45所吸收到的熱射線有效率地傳導至基台41。作為高輻射率層45之形成方法，係由於可使用濺鍍法或真空蒸鍍法等周知的方法，因此在此係省略詳細的說明。
若依據以上之實施形態，則由於在基台41與隔熱板44之間設置有高輻射率層45，因此從熱板43所釋出的熱射線會被高輻射率層45所吸收，而可將所吸收的熱傳導至基台41。也就是說，藉由高輻射率層45而可提高熱板43之輻射冷卻效果，而可從熱板43引熱至基台41。因此，只要使從電源43b對於熱板43之通電電流停止或降低，便可使熱板43的溫度快速下降。故而，即使於在成膜中存在有從熱板43以外而來之導入熱的情況，也可將基板Sw控制為特定溫度。
以上，雖針對本發明之實施形態作了說明，但本發明係並不限定於上述實施形態，在不脫離本發明之趣旨的範圍內，可進行各種之變形。例如，於上述實施形態中，雖是以將真空處理裝置設為濺鍍裝置SM的情況為例作了說明，但只要是於真空腔1內設置有於熱板43與基台41之間具有隔熱板44的平台4之真空處理裝置，則並不限定於此，例如，亦可將本發明適用於乾蝕刻裝置、CVD裝置或熱處理裝置。
又，於上述實施形態中，吸盤板42與熱板43雖是個別地構成，但亦可於吸盤板42內建加熱手段而將吸盤板42與熱板一體地構成。
另外，相較於來自熱板43之中央部的熱射線釋出量而來自外周部的熱射線釋出量為較多一事係為已知，若以覆蓋基台41上面的全面的方式來形成高輻射率層45，則相較於熱板43之中央部而外周部的溫度會變得更低，在熱板43之中央部與外周部之間係成為容易產生溫度差，如此一來，係有無法涵蓋基板Sw表面之全面來均勻地實施真空處理之虞。因此，如第3圖所示般地，藉由以覆蓋基台41上面之除了外周部41b以外之部分的方式來形成高輻射率層45，係可對在熱板43之中央部與外周部之間產生的溫度差作抑制，而為有利。
又，於上述實施形態中，例如，作為高輻射率層45係以Alx Ti1-x N膜(0.1≦x≦0.95)為例作了說明，但是，並不限定於此，亦可構成為，藉由對於基台41上面或是隔熱板44下面來實施熔射或成膜等之表面處理，而形成由Al2 O3 等之非金屬膜或Ti熔射膜所構成的高輻射率層。
SM:濺鍍裝置(真空處理裝置) 1:真空腔 4:平台 41:基台 42:吸盤板 43:熱板 44:隔熱板 45:高輻射率層、Alx Ti1-x:N膜
[第1圖]係對於本發明之實施形態的濺鍍裝置作展示的示意剖面圖。 [第2圖]係將第1圖之一部分放大來作展示的剖面圖。 [第3圖]係對於本發明之變形例作展示的剖面圖。
1:真空腔
2:陰極單元
4:平台
5:氣體管
7:板環
8:防附著板
11:絕緣體
21:靶材
21a:背板
21b:濺鍍面
21c:濺鍍電源
21d:輸出
22:磁鐵單元
32:絕緣體
33:絕緣體
41:基台
41a:冷媒循環路
42:吸盤板
43:熱板
43a:加熱手段
43b:電源
44:隔熱板
45:高輻射率層、AlxTi1-xN膜
51:質量流控制器
61:真空幫浦
62:排氣管
71:凹溝
81:上防附著板
82:下防附著板
82a:豎立壁部
82b:平坦部
82c:突條
83:驅動手段
83a:驅動軸
SM:濺鍍裝置(真空處理裝置)
Sw:被處理基板

Claims (4)

  1. 一種真空處理裝置，其係具備可形成真空氛圍的真空腔、和在真空腔內支持被處理基板的平台，平台，係具有可作選擇性地冷卻的基台、和被設置於基台上來將被處理基板靜電吸附的吸盤板、以及被中介設置於基台與吸盤板之間的熱板，將被靜電吸附於吸盤板表面的被處理基板自由控制為室溫以上的特定溫度，該真空處理裝置，係於基台與熱板之間，進一步具備對於從熱板而至基台之導熱作抑制的隔熱板，其特徵為，於基台與隔熱板之間，設置具有較基台的上面更高之輻射率的高輻射率層。
  2. 如申請專利範圍第1項所記載之真空處理裝置，其中，前述高輻射率層的輻射率係為0.49以上。
  3. 如申請專利範圍第1項或第2項所記載之真空處理裝置，其中，前述高輻射率層，係以AlxTi1-xN膜(0.1≦x≦0.95)所構成。
  4. 如申請專利範圍第1項或第2項所記載之真空處理裝置，其中，前述高輻射率層，係以覆蓋基台上面之除了外周部以外的部分的方式來形成。
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